公开(公告)号：US20130152853A1

公开(公告)日：2013-06-20

申请号：US13714918

申请日：2012-12-14

申请人： NuFlare Technology, Inc. ,  Central Research Institute of Electric Power Industry ,  Denso Corporation ,  Ayumu ADACHI ,  Koichi NISHIKAWA

发明人： Kunihiko SUZUKI ,  Yuusuke SATO ,  Hideki ITO ,  Hidekazu TSUCHIDA ,  Isaho KAMATA ,  Masahiko ITO ,  Masami NAITO ,  Hiroaki FUJIBAYASHI ,  Ayumu ADACHI ,  Koichi NISHIKAWA

IPC分类号： C30B25/16 ,  C30B25/14

CPC分类号： C30B25/165 ,  C30B25/14

摘要： A film-forming apparatus 100 supplies a plurality of gases toward a substrate 101 in a chamber 103 using a shower plate 124. The shower plate 124 has a plurality of gas flow paths 121 extending within the shower plate along a first face of the substrate 101 side and connected to gas pipes 131 supplying a plurality of gases, and a plurality of gas jetting holes 129 bored such that the plurality of gas flow paths 121 and the chamber 103 communicate with each other on the first face side. In the film-forming apparatus 100, the plurality of gases supplied from the gas pipes 131 to the plurality of gas flow paths 121 of the shower plate 124 are supplied from the gas jetting holes 129 to the substrate 101 without being mixed inside of and vicinity of the shower plate 124.

摘要翻译： 成膜装置100使用淋浴板124向腔室103内的基板101供给多个气体。淋浴板124具有沿着基板101的第一面在喷淋板内延伸的多个气体流路121 并且连接到供应多个气体的气体管道131，以及多个气体喷射孔129，其多个气体流路121和腔室103在第一面侧相互连通。 在成膜装置100中，从气体管131供给到淋浴板124的多个气体流路121的多个气体从气体喷射孔129供给到基板101而不混入内部 的淋浴板124。

公开(公告)号：US20160138190A1

公开(公告)日：2016-05-19

申请号：US14899273

申请日：2014-06-19

申请人： DENSO CORPORATION ,  CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY ,  NUFLARE TECHNOLOGY, INC. ,  TOYOTA JIDOSHA KABUSHIKI KAISHA

发明人： Hiroaki FUJIBAYASHI ,  Masami NAITO ,  Masahiko ITO ,  Isaho KAMATA ,  Hidekazu TSUCHIDA ,  Hideki ITO ,  Ayumu ADACHI ,  Koichi NISHIKAWA

IPC分类号： C30B25/14 ,  C30B29/36 ,  C23C16/458 ,  C30B25/16 ,  H01L21/02 ,  C23C16/455

CPC分类号： C30B25/14 ,  C23C16/325 ,  C23C16/45519 ,  C23C16/45548 ,  C23C16/45553 ,  C23C16/45574 ,  C23C16/45587 ,  C23C16/4584 ,  C23C16/4586 ,  C30B25/165 ,  C30B29/36 ,  H01L21/02529 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02598 ,  H01L21/0262

摘要： In a silicon carbide semiconductor film forming apparatus, first to third gasses are introduced into first to third separation chambers through first to third inlets, respectively. The first and second gasses are silicon raw material including gas and carbon raw material including gas, and the third gas does not include silicon and carbon. The first and second gasses are independently supplied to growth space through first and second supply paths extending from the first and second separation chambers, respectively. The third gas is introduced through a third supply path from the third separation chamber between the first and second gasses.

摘要翻译： 在碳化硅半导体膜形成装置中，第一至第三气体分别通过第一至第三入口引入第一至第三分离室。 第一和第二气体是包括气体和碳原料的硅原料，包括气体，第三气体不包括硅和碳。 第一和第二气体分别通过从第一和第二分离室延伸的第一和第二供应路径独立地供应到生长空间。 第三气体通过第三供给路径从第一和第二气体之间的第三分离室引入。

公开(公告)号：US20150329967A1

公开(公告)日：2015-11-19

申请号：US14812130

申请日：2015-07-29

申请人： NuFlare Technology, Inc. ,  Toyota Jidosha Kabushiki Kaisha ,  Denso Corporation

发明人： Hideki ITO ,  Toshiro TSUMORI ,  Kunihiko SUZUKI ,  Hidekazu TSUCHIDA ,  Isaho KAMATA ,  Masahiko ITO ,  Masami NAITO ,  Hiroaki FUJIBAYASHI ,  Ayumu ADACHI ,  Koichi NISHIKAWA

IPC分类号： C23C16/46 ,  C23C16/458 ,  C23C16/455

CPC分类号： C23C16/325 ,  C23C16/455 ,  C23C16/45519 ,  C23C16/45557 ,  C23C16/458 ,  C23C16/46 ,  C30B25/10

摘要： It is an object of the present invention to provide a film-forming apparatus and a film-forming method that can prolong the lifetime of heaters used under high temperature conditions in an epitaxial growth technique. An inert gas discharge portion supplies an inert gas into the space containing the heater, gas is then discharged through the gas discharge portion without influence on the semiconductor substrate during film formation. It is therefore possible to prevent the reaction gas entering into the space containing the high-temperature heaters. This makes it possible to prevent a reaction between hydrogen gas contained in the reaction gas and SiC constituting the heaters. Therefore, it is possible to prevent carbon used as a base material of the heaters from being exposed due to the decomposition of SiC and then reacting with hydrogen gas. This makes it possible to prolong the lifetime of the heaters.

摘要翻译： 本发明的目的是提供一种可以延长在外延生长技术中在高温条件下使用的加热器的寿命的成膜装置和成膜方法。 惰性气体排出部分将惰性气体供入包含加热器的空间中，然后气体在成膜期间通过气体排出部分排出，而不影响半导体基板。 因此，可以防止反应气体进入含有高温加热器的空间。 这使得可以防止反应气体中所含的氢气与构成加热器的SiC反应。 因此，可以防止由于SiC的分解而使用作为加热器的基材的碳然后与氢气反应。 这使得可以延长加热器的寿命。

公开(公告)号：US20150090693A1

公开(公告)日：2015-04-02

申请号：US14473157

申请日：2014-08-29

申请人： NUFLARE TECHNOLOGY, INC.

发明人： Hideki ITO ,  Kunihiko SUZUKI ,  Hidekazu TSUCHIDA ,  Isaho KAMATA ,  Masahiko ITO ,  Hiroaki FUJIBAYASHI ,  Masami NAITO ,  Ayumu ADACHI ,  Koichi NISHIKAWA

IPC分类号： C23C16/46 ,  C23C16/455 ,  C23C16/32 ,  C23C16/458

CPC分类号： C23C16/466 ,  C23C16/325 ,  C23C16/45519 ,  C23C16/45565 ,  C23C16/4586 ,  C30B25/10 ,  C30B25/14 ,  C30B29/36

摘要： A film formation apparatus according to an embodiment includes: a film formation chamber performing film formation on a substrate; a cylindrical liner provided inside of a sidewall of the film formation chamber; a process-gas supply unit provided at a top of the film formation chamber and having a first gas ejection hole supplying a process gas to inside of the liner; a first heater provided outside the liner in the film formation chamber and heating the substrate from above; a second heater heating the substrate from below; and a shielding gas supply unit having a plurality of second gas ejection holes supplying a shielding gas to a position closer to a sidewall of the film formation chamber than a position of the first gas ejection hole.

摘要翻译： 根据实施例的成膜装置包括：成膜室，其在基板上进行成膜; 设置在成膜室的侧壁内部的圆筒形衬套; 处理气体供给单元，其设置在成膜室的顶部，并且具有将处理气体供给到所述衬里内部的第一气体喷出孔; 设置在成膜室内的衬套外侧的第一加热器，并从上方加热基板; 第二加热器从下方加热基板; 以及保护气体供给单元，其具有多个第二气体喷射孔，该保护气体喷射孔比所述第一气体喷射孔的位置向保护气体提供更靠近所述成膜室侧壁的位置。

公开(公告)号：US20100159653A1

公开(公告)日：2010-06-24

申请号：US12716916

申请日：2010-03-03

申请人： Ken-ichi NONAKA ,  Hideki HASHIMOTO ,  Seiichi YOKOYAMA ,  Hiroaki IWAKURO ,  Koichi NISHIKAWA ,  Masaaki SHIMIZU ,  Yusuke FUKUDA

发明人： Ken-ichi NONAKA ,  Hideki HASHIMOTO ,  Seiichi YOKOYAMA ,  Hiroaki IWAKURO ,  Koichi NISHIKAWA ,  Masaaki SHIMIZU ,  Yusuke FUKUDA

IPC分类号： H01L21/336 ,  H01L21/314

CPC分类号： H01L29/8083 ,  H01L21/0465 ,  H01L21/266 ,  H01L29/1066 ,  H01L29/1608 ,  H01L29/66068 ,  Y10S438/931

摘要： A method for manufacturing an ion implantation mask is disclosed which includes the steps of: forming an oxide film as a protective film over the entire surface of a semiconductor substrate; forming a thin metal film over the oxide film; and forming an ion-inhibiting layer composed of an ion-inhibiting metal over the thin metal film. The obtained ion implantation mask is used to form a deeper selectively electroconductive region.

摘要翻译： 公开了一种用于制造离子注入掩模的方法，其包括以下步骤：在半导体衬底的整个表面上形成氧化膜作为保护膜; 在氧化膜上形成薄金属膜; 以及在所述薄金属膜上形成由离子抑制金属构成的离子抑制层。 所获得的离子注入掩模用于形成更深的选择性导电区域。

公开(公告)号：US20130016617A1

公开(公告)日：2013-01-17

申请号：US13525729

申请日：2012-06-18

申请人： Koichi NISHIKAWA

发明人： Koichi NISHIKAWA

IPC分类号： H04L12/26

CPC分类号： H04L12/42 ,  H04L41/06 ,  H04L43/0811 ,  H04L43/0817

摘要： The network relay device is provided. The network relay device includes: a plurality of ports, each being configured to be connectable with one physical line; a virtual line controller configured to treat a plurality of physical lines, which are respectively connected with the plurality of ports, to constitute a virtual line; and a status check frame controller configured to send via the virtual line a status check frame for use in checking status of a network, which the network relay device is connected with via the virtual line, wherein the status check frame controller changes a frame-sending port to be used to send a next status check frame, in order to avoid continuously using an identical port as both a frame-sending port to send the status check frame and a frame-receiving port to receive the status check frame from another network relay device.

摘要翻译： 提供网络中继设备。 网络中继装置包括：多个端口，每个端口被配置为可与一条物理线路连接; 虚拟线路控制器，被配置为处理分别与所述多个端口连接的多条物理线路，以构成虚拟线路; 以及状态检查帧控制器，被配置为经由所述虚拟线路发送用于检查所述网络中继设备经由所述虚拟线路连接的网络的状态的状态检查帧，其中所述状态检查帧控制器改变帧发送 端口用于发送下一个状态检查帧，以避免连续使用相同的端口作为帧发送端口发送状态检查帧和帧接收端口，以从另一个网络中继接收状态检查帧 设备。