摘要:
A method of manufacturing a hetero-junction bipolar transistor including a carbon-doped base layer includes the steps of (a) growing a base layer on an underlying layer through chemical vapor deposition, (b) forming at least one semiconductor layer over the base layer, and (c) then subjecting the base layer to thermal annealing at a temperature of 520° C. to 650° C.
摘要:
A method of manufacturing a hetero-junction bipolar transistor including a carbon-doped base layer includes the steps of (a) growing a base layer on an underlying layer through chemical vapor deposition, (b) forming at least one semiconductor layer over the base layer, and (c) then subjecting the base layer to thermal annealing at a temperature of 520° C. to 650° C.
摘要:
A silicon steel sheet contains 0.01 wt. % or less C, 4 to 10 wt. % Si, 0.5 wt. % or less Mn, 0.01 wt. % or less P, 0.01 wt. % or less S, 0.2 wt. % or less sol. Al, 0.01 wt. % or less N, 0.02 wt. % or less O and the balance being Fe. The silicon steel sheet has grain boundaries and carbides which are precipitated on the grain boundaries. The carbides have an area of 20% or less to an area of the grain boundaries. The steel sheet is cooled at a cooling speed of 5° C./sec. or more in a temperature range of from 300 to 700° C.
摘要:
The present invention provides a protein of the following formula (I) having immunomodulatory activity: X-Y-Z (I) wherein X represents an amino acid sequence of SEQ ID NO: 1 or 2, each of Y and Z is absent or represents an amino acid sequence of SEQ ID NO: 1 or 2. The above protein is derived from helminth and can be used to treat various immune diseases due to its immunomodulatory activity. The above protein can also be used to treat various allergic diseases due to is ability to stimulate the production of non-specific IgE.
摘要翻译:本发明提供具有免疫调节活性的下式(I)的蛋白质:XYZ(I)其中X表示SEQ ID NO:1或2的氨基酸序列,Y和Z各自不存在或表示氨基酸序列 SEQ ID NO:1或2.上述蛋白质来自蠕虫,可用于治疗由于其免疫调节活性而引起的各种免疫疾病。 由于能够刺激非特异性IgE的产生,上述蛋白质也可用于治疗各种过敏性疾病。
摘要:
A soft magnetic alloy sheet has low residual magnetic flux density. The alloy sheet comprises a base element and an alloying element having a concentration gradient in a thickness direction of the alloy sheet. The alloying element is selected from Si, Al, Ni, Co and Fe.
摘要:
A nitride semiconductor device includes an undoped GaN layer (1) and an undoped AlGaN layer (2) that are formed on an Si substrate (10), and ohmic electrodes (a source electrode (11) and a drain electrode (12)) that are formed on the undoped GaN layer (1) and the undoped AlGaN layer (2) and that are made of Ti/Al/TiN. Concentration of nitrogen in the ohmic electrodes is set in a range from 1×1016 cm−3 to 1×1020 cm−3. Consequently, contact resistance between the nitride semiconductor layers and the ohmic electrodes can be reduced.
摘要翻译:氮化物半导体器件包括未掺杂的GaN层(1)和形成在Si衬底(10)上的未掺杂的AlGaN层(2)和欧姆电极(源电极(11)和漏电极(12)), 形成在未掺杂的GaN层(1)和未掺杂的AlGaN层(2)上,并且由Ti / Al / TiN制成。 欧姆电极中的氮浓度设定在1×1016 cm -3到1×1020cm-3的范围内。 因此,能够降低氮化物半导体层与欧姆电极之间的接触电阻。
摘要:
A cold-rolled steel sheet includes, on a percent by mass basis: C: 0.0010% to 0.0030%, Si: 0.05% or less, Mn: 0.1% to 0.3%, P: 0.05% or less, S: 0.02% or less, Al: 0.02% to 0.10%, N: 0.005% or less, and Nb: 0.010% to 0.030% and the remainder composed of Fe and incidental impurities, wherein r values in a rolling direction and a direction perpendicular to the rolling direction are within a range of 1.0 to 1.6, and a mean value Elm of elongations in the rolling direction, a direction at 45° with respect to the rolling direction, and the direction perpendicular to the rolling direction is 40% or more, where Elm=(ElL+2×ElD+ElC)/4 ElL: elongation in the rolling direction, ElD: elongation in the direction at 45° with respect to the rolling direction, and ElC: elongation in the direction perpendicular to the rolling direction.
摘要:
Provided is a steel-based damping alloy steel sheet having a thickness of 2.0 mm or less which has excellent damping property, its loss factor being 0.040 or more, without expensive elements such as Cr and Co added; and a method for producing the same. Further provided is a damping alloy steel sheet having a thickness of 2.0 mm or less which contains at least one of the following elements in the following concentrations; C: 0.005% or less, Mn: 0.05 to 1.5%, P: 0.2% or less, S: 0.02% or less, N: 0.005% or less, Si: 1.0 to 3.5%, and Sol. Al: 1.0 to 7.0%, in terms of mass, the remainder being Fe and inevitable impurities, and has an average grain diameter of 50 to 500 μm, a maximum permeability of 2,000 or more, and a residual induction of 0.90 T or less.
摘要:
A heterojunction bipolar transistor comprising a collector layer of a first conductivity type, a base layer of a second conductivity type, and an emitter layer of the first conductivity type, which are formed on a semiconductor substrate in this order, and further a collector electrode directly or indirectly connected to the collector layer, a base electrode directly or indirectly connected to the base layer, and an emitter electrode directly or indirectly connected to the emitter layer, wherein a semiconductor protecting layer is formed on the base layer and extended outside an edge of the base layer, the base electrode is formed on the semiconductor protecting layer, and at least a region under the semiconductor protecting layer is filled with an organic insulator.
摘要:
A cold-rolled steel sheet includes, on a percent by mass basis: C: 0.0010% to 0.0030%, Si: 0.05% or less, Mn: 0.1% to 0.3%, P: 0.05% or less, S: 0.02% or less, Al: 0.02% to 0.10%, N: 0.005% or less, and Nb: 0.010% to 0.030% and the remainder composed of Fe and incidental impurities, wherein values in a rolling direction and a direction perpendicular to the rolling direction are within a range of 1.0 to 1.6, and a mean value Elm of elongations in the rolling direction, a direction at 45° with respect to the rolling direction, and the direction perpendicular to the rolling direction is 40% or more, where Elm=(ElL+2×ElD+ElC)/4 and ElL: elongation in the rolling direction, ElD: elongation in the direction at 45° with respect to the rolling direction, and ElC: elongation in the direction perpendicular to the rolling direction.