Method of manufacturing hetero-junction bipolar transistor
    1.
    发明授权
    Method of manufacturing hetero-junction bipolar transistor 失效
    异质结双极晶体管的制造方法

    公开(公告)号:US06455390B2

    公开(公告)日:2002-09-24

    申请号:US09861614

    申请日:2001-05-22

    IPC分类号: H01L21331

    CPC分类号: H01L29/66318

    摘要: A method of manufacturing a hetero-junction bipolar transistor including a carbon-doped base layer includes the steps of (a) growing a base layer on an underlying layer through chemical vapor deposition, (b) forming at least one semiconductor layer over the base layer, and (c) then subjecting the base layer to thermal annealing at a temperature of 520° C. to 650° C.

    摘要翻译: 一种制造包含碳掺杂基底层的异质结双极晶体管的方法包括以下步骤:(a)通过化学气相沉积在下层生长基底层,(b)在基底层上形成至少一个半导体层 ,(c)然后在520℃至650℃的温度下对基层进行热退火。

    Method of manufacturing hetero-junction bipolar transistor
    2.
    发明授权
    Method of manufacturing hetero-junction bipolar transistor 失效
    异质结双极晶体管的制造方法

    公开(公告)号:US06258685B1

    公开(公告)日:2001-07-10

    申请号:US09376299

    申请日:1999-08-18

    IPC分类号: H01L21331

    CPC分类号: H01L29/66318

    摘要: A method of manufacturing a hetero-junction bipolar transistor including a carbon-doped base layer includes the steps of (a) growing a base layer on an underlying layer through chemical vapor deposition, (b) forming at least one semiconductor layer over the base layer, and (c) then subjecting the base layer to thermal annealing at a temperature of 520° C. to 650° C.

    摘要翻译: 一种制造包含碳掺杂基底层的异质结双极晶体管的方法包括以下步骤:(a)通过化学气相沉积在下层生长基底层,(b)在基底层上形成至少一个半导体层 ,(c)然后在520℃至650℃的温度下对基层进行热退火。

    Silicon steel sheet and method thereof
    3.
    发明授权
    Silicon steel sheet and method thereof 失效
    硅钢板及其制造方法

    公开(公告)号:US06241829B1

    公开(公告)日:2001-06-05

    申请号:US09457551

    申请日:1999-12-09

    IPC分类号: H01F104

    摘要: A silicon steel sheet contains 0.01 wt. % or less C, 4 to 10 wt. % Si, 0.5 wt. % or less Mn, 0.01 wt. % or less P, 0.01 wt. % or less S, 0.2 wt. % or less sol. Al, 0.01 wt. % or less N, 0.02 wt. % or less O and the balance being Fe. The silicon steel sheet has grain boundaries and carbides which are precipitated on the grain boundaries. The carbides have an area of 20% or less to an area of the grain boundaries. The steel sheet is cooled at a cooling speed of 5° C./sec. or more in a temperature range of from 300 to 700° C.

    摘要翻译: 硅钢板含有0.01重量% %以下C,4〜10重量% %Si,0.5wt。 %以下Mn,0.01重量% %以下P,0.01重量% %以下S,0.2重量% %以下溶胶。 Al,0.01wt。 %以下N,0.02重量% %以下,余量为Fe。 硅钢板具有在晶界析出的晶界和碳化物。 碳化物的面积相对于晶界的面积为20%以下。 钢板以5℃/秒的冷却速度冷却。 或更高的温度范围。

    Proteins having immunomodulatory activity and remedies for immunological diseases
    4.
    发明授权
    Proteins having immunomodulatory activity and remedies for immunological diseases 失效
    具有免疫调节活性的蛋白质和免疫疾病的补救措施

    公开(公告)号:US06521232B1

    公开(公告)日:2003-02-18

    申请号:US09647514

    申请日:2000-09-29

    IPC分类号: A61K3938

    摘要: The present invention provides a protein of the following formula (I) having immunomodulatory activity: X-Y-Z (I) wherein X represents an amino acid sequence of SEQ ID NO: 1 or 2, each of Y and Z is absent or represents an amino acid sequence of SEQ ID NO: 1 or 2. The above protein is derived from helminth and can be used to treat various immune diseases due to its immunomodulatory activity. The above protein can also be used to treat various allergic diseases due to is ability to stimulate the production of non-specific IgE.

    摘要翻译: 本发明提供具有免疫调节活性的下式(I)的蛋白质:XYZ(I)其中X表示SEQ ID NO:1或2的氨基酸序列,Y和Z各自不存在或表示氨基酸序列 SEQ ID NO:1或2.上述蛋白质来自蠕虫,可用于治疗由于其免疫调节活性而引起的各种免疫疾病。 由于能够刺激非特异性IgE的产生,上述蛋白质也可用于治疗各种过敏性疾病。

    NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
    6.
    发明申请
    NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
    氮化物半导体器件及其制造方法

    公开(公告)号:US20140124837A1

    公开(公告)日:2014-05-08

    申请号:US14125765

    申请日:2012-08-08

    摘要: A nitride semiconductor device includes an undoped GaN layer (1) and an undoped AlGaN layer (2) that are formed on an Si substrate (10), and ohmic electrodes (a source electrode (11) and a drain electrode (12)) that are formed on the undoped GaN layer (1) and the undoped AlGaN layer (2) and that are made of Ti/Al/TiN. Concentration of nitrogen in the ohmic electrodes is set in a range from 1×1016 cm−3 to 1×1020 cm−3. Consequently, contact resistance between the nitride semiconductor layers and the ohmic electrodes can be reduced.

    摘要翻译: 氮化物半导体器件包括未掺杂的GaN层(1)和形成在Si衬底(10)上的未掺杂的AlGaN层(2)和欧姆电极(源电极(11)和漏电极(12)), 形成在未掺杂的GaN层(1)和未掺杂的AlGaN层(2)上,并且由Ti / Al / TiN制成。 欧姆电极中的氮浓度设定在1×1016 cm -3到1×1020cm-3的范围内。 因此,能够降低氮化物半导体层与欧姆电极之间的接触电阻。

    COLD-ROLLED STEEL SHEET, METHOD FOR MANUFACTURING THE SAME, AND BACKLIGHT CHASSIS
    7.
    发明申请
    COLD-ROLLED STEEL SHEET, METHOD FOR MANUFACTURING THE SAME, AND BACKLIGHT CHASSIS 有权
    冷轧钢板,其制造方法和背光底盘

    公开(公告)号:US20110120600A1

    公开(公告)日:2011-05-26

    申请号:US13054971

    申请日:2009-07-22

    IPC分类号: C21D8/02 C22C38/00

    摘要: A cold-rolled steel sheet includes, on a percent by mass basis: C: 0.0010% to 0.0030%, Si: 0.05% or less, Mn: 0.1% to 0.3%, P: 0.05% or less, S: 0.02% or less, Al: 0.02% to 0.10%, N: 0.005% or less, and Nb: 0.010% to 0.030% and the remainder composed of Fe and incidental impurities, wherein r values in a rolling direction and a direction perpendicular to the rolling direction are within a range of 1.0 to 1.6, and a mean value Elm of elongations in the rolling direction, a direction at 45° with respect to the rolling direction, and the direction perpendicular to the rolling direction is 40% or more, where Elm=(ElL+2×ElD+ElC)/4 ElL: elongation in the rolling direction, ElD: elongation in the direction at 45° with respect to the rolling direction, and ElC: elongation in the direction perpendicular to the rolling direction.

    摘要翻译: 冷轧钢板以质量%计含有:C:0.0010〜0.0030%,Si:0.05%以下,Mn:0.1〜0.3%,P:0.05%以下,S:0.02%以下 Al:0.02〜0.10%,N:0.005%以下,Nb:0.010%〜0.030%,余量由Fe和杂质构成,其中r值在轧制方向和垂直于轧制方向的方向 在1.0〜1.6的范围内,轧制方向的延伸率的平均值Elm,相对于轧制方向为45°的方向以及与轧制方向垂直的方向为40%以上,其中,Elm = (ElL + 2×ElD + ElC)/ 4 ElL:轧制方向的伸长率,ElD:相对于轧制方向在45°的方向的伸长率,以及ElC:与轧制方向垂直的方向的伸长率。

    Damping Alloy Steel Sheet and Method for Producing Same
    8.
    发明申请
    Damping Alloy Steel Sheet and Method for Producing Same 审中-公开
    阻尼合金钢板及其制造方法

    公开(公告)号:US20090218015A1

    公开(公告)日:2009-09-03

    申请号:US12223512

    申请日:2007-02-06

    IPC分类号: C21D8/00 C22C38/06

    摘要: Provided is a steel-based damping alloy steel sheet having a thickness of 2.0 mm or less which has excellent damping property, its loss factor being 0.040 or more, without expensive elements such as Cr and Co added; and a method for producing the same. Further provided is a damping alloy steel sheet having a thickness of 2.0 mm or less which contains at least one of the following elements in the following concentrations; C: 0.005% or less, Mn: 0.05 to 1.5%, P: 0.2% or less, S: 0.02% or less, N: 0.005% or less, Si: 1.0 to 3.5%, and Sol. Al: 1.0 to 7.0%, in terms of mass, the remainder being Fe and inevitable impurities, and has an average grain diameter of 50 to 500 μm, a maximum permeability of 2,000 or more, and a residual induction of 0.90 T or less.

    摘要翻译: 提供厚度为2.0mm以下的钢基阻尼合金钢板,其具有优异的阻尼性能,其损耗因子为0.040以上,而不添加诸如Cr和Co的昂贵元素; 及其制造方法。 还提供了一种厚度为2.0mm以下的阻尼合金钢板,其含有以下浓度中的至少一种以下元素: C:0.005%以下,Mn:0.05〜1.5%,P:0.2%以下,S:0.02%以下,N:0.005%以下,Si:1.0〜3.5%,Sol。 Al:质量百分比为1.0〜7.0%,余量为Fe和不可避免的杂质,平均粒径为50〜500μm,最大磁导率为2000以上,残留感应为0.90T以下。

    Heterojunction bipolar transistor and production process therefor
    9.
    发明授权
    Heterojunction bipolar transistor and production process therefor 失效
    异质结双极晶体管及其制备方法

    公开(公告)号:US06825508B2

    公开(公告)日:2004-11-30

    申请号:US10238742

    申请日:2002-09-11

    IPC分类号: H01L3072

    摘要: A heterojunction bipolar transistor comprising a collector layer of a first conductivity type, a base layer of a second conductivity type, and an emitter layer of the first conductivity type, which are formed on a semiconductor substrate in this order, and further a collector electrode directly or indirectly connected to the collector layer, a base electrode directly or indirectly connected to the base layer, and an emitter electrode directly or indirectly connected to the emitter layer, wherein a semiconductor protecting layer is formed on the base layer and extended outside an edge of the base layer, the base electrode is formed on the semiconductor protecting layer, and at least a region under the semiconductor protecting layer is filled with an organic insulator.

    摘要翻译: 一种异质结双极晶体管,其特征在于,具有第一导电型的集电极层,第二导电型的基极层和第一导电型的发射极层,其依次形成在半导体基板上, 或间接地连接到集电极层,直接或间接连接到基极层的基极和直接或间接连接到发射极层的发射极,其中半导体保护层形成在基极层上并延伸到 基底层,基底电极形成在半导体保护层上,至少半导体保护层下方的区域填充有机绝缘体。

    Cold-rolled steel sheet, method for manufacturing the same, and backlight chassis
    10.
    发明授权
    Cold-rolled steel sheet, method for manufacturing the same, and backlight chassis 有权
    冷轧钢板,其制造方法以及背光源底盘

    公开(公告)号:US08449699B2

    公开(公告)日:2013-05-28

    申请号:US13054971

    申请日:2009-07-22

    IPC分类号: C22C38/00 C21D8/00

    摘要: A cold-rolled steel sheet includes, on a percent by mass basis: C: 0.0010% to 0.0030%, Si: 0.05% or less, Mn: 0.1% to 0.3%, P: 0.05% or less, S: 0.02% or less, Al: 0.02% to 0.10%, N: 0.005% or less, and Nb: 0.010% to 0.030% and the remainder composed of Fe and incidental impurities, wherein values in a rolling direction and a direction perpendicular to the rolling direction are within a range of 1.0 to 1.6, and a mean value Elm of elongations in the rolling direction, a direction at 45° with respect to the rolling direction, and the direction perpendicular to the rolling direction is 40% or more, where Elm=(ElL+2×ElD+ElC)/4 and ElL: elongation in the rolling direction, ElD: elongation in the direction at 45° with respect to the rolling direction, and ElC: elongation in the direction perpendicular to the rolling direction.

    摘要翻译: 冷轧钢板以质量%计含有:C:0.0010〜0.0030%,Si:0.05%以下,Mn:0.1〜0.3%,P:0.05%以下,S:0.02%以下 Al:0.02〜0.10%,N:0.005%以下,Nb:0.010%〜0.030%,余量由Fe和杂质组成,其中轧制方向和垂直于轧制方向的方向为 在1.0〜1.6的范围内,轧制方向的伸长率,相对于轧制方向为45°的方向和与轧制方向垂直的方向的平均值Elm为40%以上,其中,Elm =( ElL + 2×ElD + ElC)/ 4和ElL:轧制方向的伸长率,ElD:相对于轧制方向在45°的方向的伸长率,以及ElC:与轧制方向垂直的方向的伸长率。