公开(公告)号：US5489338A

公开(公告)日：1996-02-06

申请号：US97789

申请日：1993-07-26

申请人： Kousou Fujino ,  Satoshi Takano ,  Noriyuki Yoshida ,  Tsukushi Hara ,  Hideo Ishii

发明人： Kousou Fujino ,  Satoshi Takano ,  Noriyuki Yoshida ,  Tsukushi Hara ,  Hideo Ishii

IPC分类号： C01G1/00 ,  C23C14/28 ,  C23C14/46 ,  C23C14/54 ,  C30B23/08 ,  H01B12/06 ,  H01B13/00 ,  H01L39/24

CPC分类号： C23C14/28 ,  C23C14/54 ,  H01L39/2448

摘要： An apparatus for manufacturing an oxide superconducting film employing laser ablation method having a thin film forming chamber having a laser-transparent laser entrance window, a target being provided in the thin film forming chamber and containing components of an oxide superconductor, a laser beam source for irradiating the target with a laser beam from the exterior of the thin film forming chamber through the laser entrance window, and a controller for controlling power of the laser beam which is applied to the target for preventing the power of the laser beam, being applied to the target, from reduction by contamination of the entrance window caused by scattered particles. According to the present invention, it is possible to form an oxide superconducting film having high and uniform characteristics even if a long time is required for film formation, thereby attaining a remarkable effect in improvement of superconductivity of a large area oxide superconducting film.

摘要翻译： 一种使用具有激光透明激光入射窗的薄膜形成室的激光烧蚀方法的制造氧化物超导膜的装置，在薄膜形成室内设置靶，并含有氧化物超导体的成分，激光束源 用来自薄膜形成室的外部的激光束通过激光入口窗照射目标，以及控制器，用于控制施加到目标上的激光束的功率，以防止激光束的光束被施加到 目标，由于分散颗粒引起的入口窗口的污染减少。 根据本发明，即使成膜需要长时间，也可以形成具有高均匀性的氧化物超导膜，从而在提高大面积氧化物超导膜的超导性方面具有显着的效果。

公开(公告)号：US5601649A

公开(公告)日：1997-02-11

申请号：US496564

申请日：1995-06-29

申请人： Kousou Fujino ,  Satoshi Takano ,  Noriyuki Yoshida ,  Tsukushi Hara ,  Hideo Ishii

发明人： Kousou Fujino ,  Satoshi Takano ,  Noriyuki Yoshida ,  Tsukushi Hara ,  Hideo Ishii

IPC分类号： C01G1/00 ,  C23C14/28 ,  C23C14/46 ,  C23C14/54 ,  C30B23/08 ,  H01B12/06 ,  H01B13/00 ,  H01L39/24

CPC分类号： C23C14/28 ,  C23C14/54 ,  H01L39/2448

摘要： Disclosed herein is an apparatus for manufacturing an oxide superconducting film employing laser ablation method. This apparatus has a thin film forming chamber having a laser-transparent laser entrance window, a target being provided in the thin film forming chamber and containing components of an oxide superconductor, a laser beam source for irradiating the target with a laser beam from the exterior of the thin film forming chamber through the laser entrance window, and apparatus for controlling power of the laser beam which is applied to the target for preventing the power of the laser beam, being applied to the target, from reduction by contamination of the entrance window caused by scattered particles. According to the present invention, it is possible to form an oxide superconducting film having high and uniform characteristics even if a long time is required for film formation, thereby attaining a remarkable effect in improvement of superconductivity of a large area oxide superconducting film.

摘要翻译： 本文公开了一种使用激光烧蚀法制造氧化物超导膜的装置。 该装置具有薄膜形成室，该薄膜形成室具有激光透明的激光入口窗口，目标设置在薄膜形成室中并且包含氧化物超导体的部件，用于从外部用激光束照射靶的激光束源 通过激光入口窗口对薄膜形成室进行控制，以及用于控制激光束的功率的装置，该激光束被施加到目标上以防止被施加到目标的激光束的功率由于入口窗口的污染而减少 由分散颗粒引起。 根据本发明，即使成膜需要长时间，也可以形成具有高均匀性的氧化物超导膜，从而在提高大面积氧化物超导膜的超导性方面具有显着的效果。

公开(公告)号：US5607899A

公开(公告)日：1997-03-04

申请号：US393747

申请日：1995-02-24

申请人： Noriyuki Yoshida ,  Kousou Fujino ,  Noriki Hayashi ,  Shigeru Okuda ,  Tsukushi Hara ,  Hideo Ishii

发明人： Noriyuki Yoshida ,  Kousou Fujino ,  Noriki Hayashi ,  Shigeru Okuda ,  Tsukushi Hara ,  Hideo Ishii

IPC分类号： C01G1/00 ,  C01G3/00 ,  C30B23/00 ,  C30B23/02 ,  C30B29/22 ,  H01B12/06 ,  H01B13/00 ,  H01L21/203 ,  H01L39/24 ,  C30B23/08 ,  C30B25/06

CPC分类号： H01L39/2448 ,  C30B23/02 ,  C30B29/16 ,  C30B29/22 ,  C30B29/225 ,  H01L39/2461 ,  Y10S505/732

摘要： A thin film strongly orienting specific crystal axes is deposited on a polycrystalline or amorphous base material in accordance with laser deposition in a simpler device through a simpler process. A target is irradiated with a laser beam, for forming a thin film in accordance with laser ablation of depositing a substance scattered from the target on a base material. In order to form the thin film, prepared are conditions capable of forming a film orienting a specific crystal axis substantially perpendicularly to the base material in substantially parallel arrangement of the target and the base material. Under the conditions, a film is deposited on the base material which is inclined at a prescribed angle .theta. with respect to the target. It is possible to deposit a film strongly orienting a specific crystal axis in a plane substantially parallel to the base material surface by inclining the base material under the specific film forming conditions.

摘要翻译： 通过更简单的工艺，在更简单的装置中，根据激光沉积，将特定晶轴强烈取向的薄膜沉积在多晶或非晶基材上。 用激光照射目标物，用于根据在基材上沉积从靶上散出的物质的激光烧蚀来形成薄膜。 为了形成薄膜，制备能够基本上平行排列靶材和基材的方式形成基本上垂直于基材垂直的特定晶轴的膜的条件。 在这种条件下，在相对于目标物以规定角度θ倾斜的基材上沉积膜。 通过在特定的成膜条件下使基材倾斜，可以将基本平行于基材表面的平面中的特定晶轴强制取向。

公开(公告)号：US5372089A

公开(公告)日：1994-12-13

申请号：US97788

申请日：1993-07-26

申请人： Noriyuki Yoshida ,  Satoshi Takano ,  Kousou Fujino ,  Shigeru Okuda ,  Tsukushi Hara ,  Hideo Ishii

发明人： Noriyuki Yoshida ,  Satoshi Takano ,  Kousou Fujino ,  Shigeru Okuda ,  Tsukushi Hara ,  Hideo Ishii

IPC分类号： C30B23/02 ,  C30B25/18 ,  H01L39/24 ,  C30B25/02

CPC分类号： H01L39/2448 ,  C30B23/02 ,  C30B25/18 ,  C30B29/22 ,  C30B29/225 ,  H01L39/2422 ,  H01L39/2461 ,  Y10S505/729 ,  Y10S505/73 ,  Y10S505/732

摘要： Disclosed herein is a method of forming a single-crystalline thin film having excellent crystallinity on a base material without depending on the material for and crystallinity of the base material. In this method, a base material is provided thereon with a mask which can prevent chemical species contained in a vapor phase from adhering to the base material. The base material is continuously moved along arrow A, to deliver a portion covered with the mask into the vapor phase for crystal growth. Thus, a thin film is successively deposited on the portion of the base material, which is delivered from under the mask, from the vapor phase. A crystal growth end is formed on a boundary region between a portion of the base material which is covered with the mask and that which is exposed to the vapor phase, so that a crystal having the same orientation as the growth end is grown on a portion of the base material newly exposed by the movement.

摘要翻译： 本文公开了在基材上形成具有优异结晶性的单晶薄膜的方法，而不依赖于基材的材料和结晶性。 在该方法中，在其上设置有能够防止气相中所含的化学物质附着在基材上的掩模的基材。 基材沿箭头A连续移动，以将覆盖有掩模的部分输送到气相中以进行晶体生长。 因此，薄膜依次沉积在从掩模下面从气相输送的基材的部分上。 晶体生长端形成在被掩模覆盖的基材的部分和暴露于气相的部分之间的边界区域上，使得具有与生长端相同取向的晶体生长在部分上 的运动新露出的基础材料。