Method of forming single-crystalline thin film
    1.
    发明授权
    Method of forming single-crystalline thin film 失效
    形成单晶薄膜的方法

    公开(公告)号:US5372089A

    公开(公告)日:1994-12-13

    申请号:US97788

    申请日:1993-07-26

    摘要: Disclosed herein is a method of forming a single-crystalline thin film having excellent crystallinity on a base material without depending on the material for and crystallinity of the base material. In this method, a base material is provided thereon with a mask which can prevent chemical species contained in a vapor phase from adhering to the base material. The base material is continuously moved along arrow A, to deliver a portion covered with the mask into the vapor phase for crystal growth. Thus, a thin film is successively deposited on the portion of the base material, which is delivered from under the mask, from the vapor phase. A crystal growth end is formed on a boundary region between a portion of the base material which is covered with the mask and that which is exposed to the vapor phase, so that a crystal having the same orientation as the growth end is grown on a portion of the base material newly exposed by the movement.

    摘要翻译: 本文公开了在基材上形成具有优异结晶性的单晶薄膜的方法,而不依赖于基材的材料和结晶性。 在该方法中,在其上设置有能够防止气相中所含的化学物质附着在基材上的掩模的基材。 基材沿箭头A连续移动,以将覆盖有掩模的部分输送到气相中以进行晶体生长。 因此,薄膜依次沉积在从掩模下面从气相输送的基材的部分上。 晶体生长端形成在被掩模覆盖的基材的部分和暴露于气相的部分之间的边界区域上,使得具有与生长端相同取向的晶体生长在部分上 的运动新露出的基础材料。

    Oxide superconducting film manufacturing apparatus
    2.
    发明授权
    Oxide superconducting film manufacturing apparatus 失效
    氧化物超导薄膜制造装置

    公开(公告)号:US5489338A

    公开(公告)日:1996-02-06

    申请号:US97789

    申请日:1993-07-26

    摘要: An apparatus for manufacturing an oxide superconducting film employing laser ablation method having a thin film forming chamber having a laser-transparent laser entrance window, a target being provided in the thin film forming chamber and containing components of an oxide superconductor, a laser beam source for irradiating the target with a laser beam from the exterior of the thin film forming chamber through the laser entrance window, and a controller for controlling power of the laser beam which is applied to the target for preventing the power of the laser beam, being applied to the target, from reduction by contamination of the entrance window caused by scattered particles. According to the present invention, it is possible to form an oxide superconducting film having high and uniform characteristics even if a long time is required for film formation, thereby attaining a remarkable effect in improvement of superconductivity of a large area oxide superconducting film.

    摘要翻译: 一种使用具有激光透明激光入射窗的薄膜形成室的激光烧蚀方法的制造氧化物超导膜的装置,在薄膜形成室内设置靶,并含有氧化物超导体的成分,激光束源 用来自薄膜形成室的外部的激光束通过激光入口窗照射目标,以及控制器,用于控制施加到目标上的激光束的功率,以防止激光束的光束被施加到 目标,由于分散颗粒引起的入口窗口的污染减少。 根据本发明,即使成膜需要长时间,也可以形成具有高均匀性的氧化物超导膜,从而在提高大面积氧化物超导膜的超导性方面具有显着的效果。

    Oxide superconducting film manufacturing apparatus
    3.
    发明授权
    Oxide superconducting film manufacturing apparatus 失效
    氧化物超导薄膜制造装置

    公开(公告)号:US5601649A

    公开(公告)日:1997-02-11

    申请号:US496564

    申请日:1995-06-29

    摘要: Disclosed herein is an apparatus for manufacturing an oxide superconducting film employing laser ablation method. This apparatus has a thin film forming chamber having a laser-transparent laser entrance window, a target being provided in the thin film forming chamber and containing components of an oxide superconductor, a laser beam source for irradiating the target with a laser beam from the exterior of the thin film forming chamber through the laser entrance window, and apparatus for controlling power of the laser beam which is applied to the target for preventing the power of the laser beam, being applied to the target, from reduction by contamination of the entrance window caused by scattered particles. According to the present invention, it is possible to form an oxide superconducting film having high and uniform characteristics even if a long time is required for film formation, thereby attaining a remarkable effect in improvement of superconductivity of a large area oxide superconducting film.

    摘要翻译: 本文公开了一种使用激光烧蚀法制造氧化物超导膜的装置。 该装置具有薄膜形成室,该薄膜形成室具有激光透明的激光入口窗口,目标设置在薄膜形成室中并且包含氧化物超导体的部件,用于从外部用激光束照射靶的激光束源 通过激光入口窗口对薄膜形成室进行控制,以及用于控制激光束的功率的装置,该激光束被施加到目标上以防止被施加到目标的激光束的功率由于入口窗口的污染而减少 由分散颗粒引起。 根据本发明,即使成膜需要长时间,也可以形成具有高均匀性的氧化物超导膜,从而在提高大面积氧化物超导膜的超导性方面具有显着的效果。

    Method of forming single-crystalline thin film
    4.
    发明授权
    Method of forming single-crystalline thin film 失效
    形成单晶薄膜的方法

    公开(公告)号:US5607899A

    公开(公告)日:1997-03-04

    申请号:US393747

    申请日:1995-02-24

    摘要: A thin film strongly orienting specific crystal axes is deposited on a polycrystalline or amorphous base material in accordance with laser deposition in a simpler device through a simpler process. A target is irradiated with a laser beam, for forming a thin film in accordance with laser ablation of depositing a substance scattered from the target on a base material. In order to form the thin film, prepared are conditions capable of forming a film orienting a specific crystal axis substantially perpendicularly to the base material in substantially parallel arrangement of the target and the base material. Under the conditions, a film is deposited on the base material which is inclined at a prescribed angle .theta. with respect to the target. It is possible to deposit a film strongly orienting a specific crystal axis in a plane substantially parallel to the base material surface by inclining the base material under the specific film forming conditions.

    摘要翻译: 通过更简单的工艺,在更简单的装置中,根据激光沉积,将特定晶轴强烈取向的薄膜沉积在多晶或非晶基材上。 用激光照射目标物,用于根据在基材上沉积从靶上散出的物质的激光烧蚀来形成薄膜。 为了形成薄膜,制备能够基本上平行排列靶材和基材的方式形成基本上垂直于基材垂直的特定晶轴的膜的条件。 在这种条件下,在相对于目标物以规定角度θ倾斜的基材上沉积膜。 通过在特定的成膜条件下使基材倾斜,可以将基本平行于基材表面的平面中的特定晶轴强制取向。

    High TC superconducting cable conductor employing oxide superconductor
    5.
    发明授权
    High TC superconducting cable conductor employing oxide superconductor 失效
    采用氧化物超导体的高TC超导电缆导体

    公开(公告)号:US06313408B1

    公开(公告)日:2001-11-06

    申请号:US08766984

    申请日:1996-12-16

    IPC分类号: H01B1200

    CPC分类号: H01B12/02 Y02E40/641

    摘要: Provided is an insulated oxide superconducting cable conductor having a high critical current and a high critical current density. The insulated oxide superconducting cable conductor comprises an elongated former, a plurality of tape-shaped multifilamentary oxide superconducting wires which are wound on the former at a bending strain factor of not more than 0.5%, and a spirally wound tape-shaped insulating material covering the tape-shaped multifilamentary oxide superconducting wires. The tape-shaped multifilamentary superconducting wires are superposed on the former in layers, whereby stabilizing materials of the superposed superconducting wires are in contact with each other. The tape-shaped insulating material consists essentially of a material which is contracted at a thermal contraction rate of at least three times that of the tape-shaped multifilamentary wires by cooling from a temperature of 298 K to that of 77 K. The tape-shaped insulating material can apply a pressure to the superposed multifilamentary superconducting wires toward the former while improving electrical contact between the superposed multifilamentary superconducting wires by cooling in employment. The former can be formed of a flexible tube.

    摘要翻译: 提供了具有高临界电流和高临界电流密度的绝缘氧化物超导电缆导体。 绝缘氧化物超导电缆导体包括细长的成形器,多个带状复丝氧化物超导线,其以不大于0.5%的弯曲应变系数缠绕在前者上,以及螺旋卷绕的带状绝缘材料, 带状复丝氧化物超导线。 带状多丝超导线叠层叠在一起,由此叠加的超导线的稳定材料彼此接触。 带状绝缘材料基本上由以298K的温度冷却到77K的方式以至少三倍于带状复丝线的热收缩率收缩的材料组成。带状绝缘材料 绝缘材料可以向重叠的多丝超导线施加压力,同时通过就业冷却改善叠加的多丝超导线之间的电接触。 前者可以由柔性管形成。

    Superconducting cable conductor
    7.
    发明授权
    Superconducting cable conductor 失效
    超导电缆导体

    公开(公告)号:US5932523A

    公开(公告)日:1999-08-03

    申请号:US326298

    申请日:1994-10-19

    CPC分类号: H01L39/143 H01L39/248

    摘要: In order to provide a flexible oxide superconducting cable conductor which is reduced in ac loss, tape-shaped multifilamentary superconducting wires covered with a stabilizing metal are spirally wound on a flexible former. Each of the multifilamentary superconducting wires has a plurality of filaments. The filament contains an oxide superconductor. The superconducting wires are preferably wound on the former at a bending strain of not more than 0.3 %. In winding on the former, a prescribed number of tape-shaped multifilamentary superconducting wires are wound on a core member in a side-by-side manner, to form a first layer. Then, an insulating layer is provided on the first layer. This insulating layer can be formed by an insulating tape. A prescribed number of tape-shaped superconducting multifilamentary wires are wound on the insulating layer in a side-by-side manner, to form a second layer. The insulating layer is adapted to reduce ac loss of the conductors. When the former is made of a metal, it is more preferable to provide an insulating layer between the former and the multifilamentary superconducting wires.

    摘要翻译: 为了提供减少交流损耗的柔性氧化物超导电缆导体,用稳定金属覆盖的带状多丝超导线被螺旋缠绕在柔性成形器上。 每根多丝超导线具有多根长丝。 灯丝包含氧化物超导体。 超导线优选以不大于0.3%的弯曲应变缠绕在前者上。 在卷绕在前者上时,规定数量的带状复丝超导线以并列方式卷绕在芯部件上,形成第一层。 然后,在第一层上设置绝缘层。 该绝缘层可以由绝缘带形成。 规定数量的带状超导复丝线并排缠绕在绝缘层上,形成第二层。 绝缘层适于减少导体的交流损耗。 当前者由金属制成时,更优选在前者和多丝超导线之间设置绝缘层。

    Semiconductor device, LED driving circuit, and apparatus for displaying an image
    9.
    发明授权
    Semiconductor device, LED driving circuit, and apparatus for displaying an image 失效
    半导体装置,LED驱动电路以及显示图像的装置

    公开(公告)号:US08258711B2

    公开(公告)日:2012-09-04

    申请号:US12779343

    申请日:2010-05-13

    IPC分类号: H05B37/02

    摘要: The semiconductor device is included in the LED driving circuit (current regulator) of driving the LED array (with series-connected number m×parallel-connected number n), and is formed of a plurality (n pieces) of LED driving devices of controlling a current (constant-current driving) flowing in each string. A vertical semiconductor device, for example, a vertical MOSFET is used as the LED driving device. Both of a main device functioning as a constant-current driving device and a subsidiary device functioning as a circuit-breaking switch during dimming are formed inside a chip of the device, which are formed of the vertical semiconductor devices. In a first surface of the device, each source region of the main device and the subsidiary device is formed so as to be insulated from each other through an isolation region.

    摘要翻译: 半导体器件包括在驱动LED阵列(串联数字×并联数n)的LED驱动电路(电流调节器)中,并且由多个(n个)LED驱动装置形成, 在每个串中流动的电流(恒流驱动)。 使用垂直半导体器件,例如垂直MOSFET作为LED驱动器件。 作为恒流驱动装置的主装置和在调光期间用作断路开关的辅助装置都形成在由垂直半导体装置形成的装置的芯片的内部。 在装置的第一表面中,主装置和附属装置的每个源区形成为通过隔离区彼此绝缘。