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11 条记录 (耗时 0.028 秒)

    Ionic Additives to Solvent-Based Strippers
    1.
    发明申请
    Ionic Additives to Solvent-Based Strippers 审中-公开
    离子添加剂溶剂型剥离剂

    公开(公告)号：US20070219105A1

    公开(公告)日：2007-09-20

    申请号：US11687741

    申请日：2007-03-19

    申请人： Galit Levitin ,  Dennis W. Hess

    发明人： Galit Levitin ,  Dennis W. Hess

    IPC分类号： C11D7/32

    CPC分类号： C11D7/5004 ,  C11D7/10 ,  C11D7/32 ,  C11D11/0047

    摘要： In a removal solution for removing a residue from a substrate, a first interfacial tension exists between the residue and the substrate. The solution includes a polar solvent and an ionic salt. The ionic salt is dissolved into the polar solvent, thereby forming the removal solution. The ionic salt includes at least one ion that, upon dissolution in the solvent, causes the removal solution to have a lower interfacial tension with the residue than the first interfacial tension.

    摘要翻译： 在用于从底物中除去残余物的去除溶液中，残留物和底物之间存在第一界面张力。 该溶液包括极性溶剂和离子盐。 将离子盐溶解在极性溶剂中，从而形成除去溶液。 离子盐包括至少一种离子，当溶解在溶剂中时，使离子溶液与残留物相比具有比第一界面张力更低的界面张力。

    Low temperature metal etching and patterning
    3.
    发明授权
    Low temperature metal etching and patterning 有权
    低温金属蚀刻和图案化

    公开(公告)号：US08679359B2

    公开(公告)日：2014-03-25

    申请号：US13104864

    申请日：2011-05-10

    申请人： Fangyu Wu ,  Dennis W. Hess ,  Galit Levitin

    发明人： Fangyu Wu ,  Dennis W. Hess ,  Galit Levitin

    IPC分类号： H01L21/3065

    CPC分类号： H01L21/32136

    摘要： The present invention is directed to a method and apparatus for etching various metals that may be used in semiconductor or integrated circuit processing through the use of non-halogen gases such as hydrogen, helium, or combinations of hydrogen and helium with other gases such as argon. In one exemplary embodiment of the present invention, in a reaction chamber, a substrate having a metal interconnect layer deposited thereon is exposed to a plasma formed of non-halogen gas. The plasma generated is maintained for a certain period of time to provide for a desired or expected etching of the metal. In some embodiments, the metal interconnect layer may be copper, gold or silver.

    摘要翻译： 本发明涉及一种用于蚀刻各种金属的方法和装置，其可以通过使用非卤素气体例如氢，氦或氢和氦的组合与其它气体如氩气一起用于半导体或集成电路处理 。 在本发明的一个示例性实施例中，在反应室中，其上沉积有金属互连层的基板暴露于由非卤素气体形成的等离子体。 所产生的等离子体被保持一段时间以提供期望的或期望的金属蚀刻。 在一些实施例中，金属互连层可以是铜，金或银。

    Plasma enhanced chemical vapor deposition of thin films of silicon nitride from cyclic organosilicon nitrogen precursors
    8.
    发明授权
    Plasma enhanced chemical vapor deposition of thin films of silicon nitride from cyclic organosilicon nitrogen precursors 失效
    等离子体增强了环状有机硅氮前体氮化硅薄膜的化学气相沉积

    公开(公告)号：US4863755A

    公开(公告)日：1989-09-05

    申请号：US106848

    申请日：1987-10-16

    申请人： Dennis W. Hess ,  Todd A. Brooks

    发明人： Dennis W. Hess ,  Todd A. Brooks

    IPC分类号： C23C16/34 ,  C23C16/36 ,  H01L21/318

    CPC分类号： C23C16/345 ,  C23C16/36 ,  H01L21/3185

    摘要： This invention relates to a process for the production of a solid thin film containing silicon and nitrogen on a substrate, said film having an aggregate low concentration of inorganic carbon and oxygen of less than about 51 atom percent, which process comprises:(A) contacting the substrate with a gaseous mixture itself comprising:(i) a volatile cyclic organic silicon-nitrogen source, and(ii) a reactant independently selected from hydrogen or a hydrogen-nitrogen source, under plasma enhanced chemical vapor deposition conditions of pressure lower than 10 Torr and temperature greater than ambient temperature for a time sufficient to produce a silicon nitride thin film. In another aspect, the invention relates to the silicon-nitride thin film coated article or substrate produced by the process of the present invention. Preferred process conditions evaluates include the RF of 13.56 MHz, 20-80 W Power, power density 0.37 watts/cm.sup.2 to 1.5 watts/cm.sup.2 and a ratio of the silicon-nitrogen source and the hydrogen nitrogen source of between about 0.1/19.9 and 0.6/19.4 percent by volume. When ammonia is used, the aggregate concentration of carbon and oxygen is less than 20 atom percent, preferably less than 10 atomic percent.

    摘要翻译： 本发明涉及在基材上生产含有硅和氮的固体薄膜的方法，所述薄膜具有小于约51原子％的聚集体低浓度的无机碳和氧，该方法包括：（A）接触 具有气体混合物本身的衬底包括：（i）挥发性环状有机硅 - 氮源，和（ii）独立地选自氢或氢 - 氮源的反应物，其压力低于10的等离子体增强化学气相沉积条件 乇和温度大于环境温度足以产生氮化硅薄膜的时间。 另一方面，本发明涉及通过本发明的方法生产的氮化硅薄膜涂覆制品或基材。 评估的优选工艺条件包括13.56MHz的RF，20-80W功率，功率密度0.37瓦特/平方厘米至1.5瓦特/平方厘米，硅 - 氮源和氢氮源的比例在约0.1 / 19.9和0.6之间 /19.4％。 当使用氨时，碳和氧的总浓度小于20原子％，优选小于10原子％。

    LOW TEMPERATURE METAL ETCHING AND PATTERNING
    9.
    发明申请
    LOW TEMPERATURE METAL ETCHING AND PATTERNING 有权
    低温金属蚀刻和图案

    公开(公告)号：US20110275220A1

    公开(公告)日：2011-11-10

    申请号：US13104864

    申请日：2011-05-10

    申请人： FANGYU WU ,  DENNIS W. HESS ,  GALIT LEVITIN

    发明人： FANGYU WU ,  DENNIS W. HESS ,  GALIT LEVITIN

    IPC分类号： H01L21/3065

    CPC分类号： H01L21/32136

    摘要： The present invention is directed to a method and apparatus for etching various metals that may be used in semiconductor or integrated circuit processing through the use of non-halogen gases such as hydrogen, helium, or combinations of hydrogen and helium with other gases such as argon. In one exemplary embodiment of the present invention, in a reaction chamber, a substrate having a metal interconnect layer deposited thereon is exposed to a plasma formed of non-halogen gas. The plasma generated is maintained for a certain period of time to provide for a desired or expected etching of the metal. In some embodiments, the metal interconnect layer may be copper, gold or silver.

    摘要翻译： 本发明涉及一种用于蚀刻各种金属的方法和装置，其可以通过使用非卤素气体例如氢，氦或氢和氦的组合与其它气体如氩气一起用于半导体或集成电路处理 。 在本发明的一个示例性实施例中，在反应室中，其上沉积有金属互连层的基板暴露于由非卤素气体形成的等离子体。 所产生的等离子体被保持一段时间以提供期望的或期望的金属蚀刻。 在一些实施例中，金属互连层可以是铜，金或银。

    Method of stripping photoresist using alcohols
    10.
    发明授权
    Method of stripping photoresist using alcohols 失效
    使用醇剥离光刻胶的方法

    公开(公告)号：US06627588B1

    公开(公告)日：2003-09-30

    申请号：US09522892

    申请日：2000-03-10

    申请人： Dennis W. Hess ,  Tazrien Kamal

    发明人： Dennis W. Hess ,  Tazrien Kamal

    IPC分类号： C11D343

    CPC分类号： C11D11/0047 ,  C11D7/06 ,  C11D7/261 ,  G03F7/425 ,  H01L21/31133

    摘要： A liquid cleaning composition and method for removal of photoresist including an aliphatic alcohol. Preferably, the alcohol is isopropyl alcohol. Additionally, an alcohol/base mixture can be used to remove photoresist, rather than alcohol used alone. Preferably, the alcohol is isopropyl alcohol, while the aqueous base is ammonium hydroxide. The temperature conditions range from about 25 degrees C. to about 70 degrees C. The pressure conditions range from about 14 pounds per square inch to about 100 pounds per square inch.

    摘要翻译： 一种液体清洗组合物和用于除去包含脂族醇的光致抗蚀剂的方法。 醇优选为异丙醇。 此外，醇/碱混合物可用于除去光致抗蚀剂，而不是单独使用的醇。 醇优选为异丙醇，碱水溶液为氢氧化铵。 温度条件为约25摄氏度至约70摄氏度。压力条件为约14磅/平方英寸至约100磅/平方英寸。