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    Apparatus and methods for processing semiconductor substrates using supercritical fluids
    3.
    发明授权
    Apparatus and methods for processing semiconductor substrates using supercritical fluids 失效
    使用超临界流体处理半导体衬底的装置和方法

    公开(公告)号：US06848458B1

    公开(公告)日：2005-02-01

    申请号：US10067520

    申请日：2002-02-05

    申请人： Krishnan Shrinivasan ,  Souvik Banerjee ,  Francisco Juarez ,  Karen A. Reinhardt ,  Sanjay Gopinath

    发明人： Krishnan Shrinivasan ,  Souvik Banerjee ,  Francisco Juarez ,  Karen A. Reinhardt ,  Sanjay Gopinath

    IPC分类号： B08B7/00 ,  H01L21/00 ,  B08B3/00

    CPC分类号： H01L21/67057 ,  B08B7/0021 ,  Y10S134/902

    摘要： The present invention pertains to a system for cleaning wafers that includes specialized pressurization, process vessel, recirculation, chemical addition, depressurization, and recapture-recycle subsystems, as well as methods for implementing wafer cleaning using such a system. A solvent delivery mechanism converts a liquid-state sub-critical solution to a supercritical cleaning solution and introduces it into a process vessel that contains a wafer or wafers. The supercritical cleaning solution is recirculated through the process vessel by a recirculation system. An additive delivery system introduces chemical additives to the supercritical cleaning solution via the solvent delivery mechanism, the process vessel, or the recirculation system. Addition of chemical additives to the sub-critical solution may also be performed. The recirculation system provides efficient mixing of chemical additives, efficient cleaning, and process uniformity. A depressurization system provides dilution and removal of cleaning solutions under supercritical conditions. A recapture-recycle system introduces captured-purified solvents into the solvent delivery mechanism.

    摘要翻译： 本发明涉及用于清洁晶片的系统，其包括专门的加压，处理容器，再循环，化学添加，减压和再捕集循环子系统，以及使用这种系统实现晶片清洗的方法。 溶剂递送机构将液态亚临界溶液转化为超临界清洗溶液并将其引入含有晶片或晶片的处理容器中。 超临界清洗溶液通过再循环系统再循环通过处理容器。 添加剂输送系统通过溶剂输送机构，处理容器或再循环系统将化学添加剂引入超临界清洗溶液。 也可以向亚临界溶液中添加化学添加剂。 再循环系统提供化学添加剂的有效混合，高效的清洗和工艺的均匀性。 减压系统在超临界条件下提供清洗溶液的稀释和去除。 回收再循环系统将捕获的纯化溶剂引入溶剂输送机构。

    Apparatus and methods for processing semiconductor substrates using supercritical fluids
    4.
    发明授权
    Apparatus and methods for processing semiconductor substrates using supercritical fluids 有权
    使用超临界流体处理半导体衬底的装置和方法

    公开(公告)号：US07503334B1

    公开(公告)日：2009-03-17

    申请号：US11031371

    申请日：2005-01-06

    申请人： Krishnan Shrinivasan ,  Souvik Banerjee ,  Francisco Juarez ,  Karen A. Reinhardt ,  Sanjay Gopinath

    发明人： Krishnan Shrinivasan ,  Souvik Banerjee ,  Francisco Juarez ,  Karen A. Reinhardt ,  Sanjay Gopinath

    IPC分类号： B08B3/00 ,  B08B3/14

    CPC分类号： H01L21/67057 ,  B08B7/0021 ,  Y10S134/902

    摘要： A system is provided for cleaning wafers that includes specialized pressurization, process vessel, recirculation, chemical addition, depressurization, and recapture-recycle subsystems. A solvent delivery mechanism converts a liquid-state sub-critical solution to a supercritical cleaning solution and introduces it into a process vessel that contains a wafer or wafers. The supercritical cleaning solution is recirculated through the process vessel by a recirculation system. An additive delivery system introduces chemical additives to the supercritical cleaning solution via the solvent delivery mechanism, the process vessel, or the recirculation system. Addition of chemical additives to the sub-critical solution may also be performed. The recirculation system provides efficient mixing of chemical additives, efficient cleaning, and process uniformity. A depressurization system provides dilution and removal of cleaning solutions under supercritical conditions. A recapture-recycle system introduces captured-purified solvents into the solvent delivery mechanism.

    摘要翻译： 提供了一种用于清洁晶片的系统，其包括专门的加压，处理容器，再循环，化学添加，减压和再捕集循环子系统。 溶剂递送机构将液态亚临界溶液转化为超临界清洗溶液并将其引入含有晶片或晶片的处理容器中。 超临界清洗溶液通过再循环系统再循环通过处理容器。 添加剂输送系统通过溶剂输送机构，处理容器或再循环系统将化学添加剂引入超临界清洗溶液。 也可以向亚临界溶液中添加化学添加剂。 再循环系统提供化学添加剂的有效混合，高效的清洗和工艺的均匀性。 减压系统在超临界条件下提供清洗溶液的稀释和去除。 回收再循环系统将捕获的纯化溶剂引入溶剂输送机构。

    SYSTEM FOR CLEANING A SURFACE USING CROGENIC AEROSOL AND FLUID REACTANT
    5.
    发明申请
    SYSTEM FOR CLEANING A SURFACE USING CROGENIC AEROSOL AND FLUID REACTANT 审中-公开
    使用碳酸氢钠和流体防除剂清洁表面的系统

    公开(公告)号：US20090126760A1

    公开(公告)日：2009-05-21

    申请号：US11793647

    申请日：2005-04-19

    申请人： Souvik Banerjee ,  Ramesh B. Borade ,  Werner Brandt

    发明人： Souvik Banerjee ,  Ramesh B. Borade ,  Werner Brandt

    IPC分类号： B08B3/10

    CPC分类号： B08B3/02 ,  B08B7/0092 ,  H01L21/02057 ,  H01L21/67051 ,  H01L21/67161 ,  H01L21/67207 ,  H01L21/67745

    摘要： An apparatus and method are provided to treat for example a semiconductor wafer substrate wherein a delivery means for heat, a cryogen, and a fluid chemical reactant, is disposed in a chamber in which the substrate is disposed for at least one surface of the substrate to be cleaned in the chamber. The chamber may also consist of a plurality of stations for chemically treating, providing cryogen to the substrate to effect such cleaning and heating. Air is provided in the chamber in a laminar flow substantially parallel to the surface being treated to remove displaced material from the surface and prevent redeposition of the material on the substrate surface.

    摘要翻译： 提供了一种设备和方法来处理例如半导体晶片衬底，其中用于加热的输送装置，制冷剂和流体化学反应物被设置在其中衬底被设置用于衬底的至少一个表面的腔室中 在室内清洁。 该室还可以由用于化学处理的多个站组成，向基板提供冷冻剂以实现这种清洁和加热。 空气以基本上平行于待处理的表面的层流提供在腔室中以从表面移除移位的材料并防止材料在基底表面上的再沉积。

    SYSTEM FOR DELIVERY OF PURIFIED MULTIPLE PHASES OF CARBON DIOXIDE TO A PROCESS TOOL
    7.
    发明申请
    SYSTEM FOR DELIVERY OF PURIFIED MULTIPLE PHASES OF CARBON DIOXIDE TO A PROCESS TOOL 审中-公开
    将二氧化碳的纯化多相物质输送到工艺工具的系统

    公开(公告)号：US20130269732A1

    公开(公告)日：2013-10-17

    申请号：US13862709

    申请日：2013-04-15

    申请人： Souvik Banerjee ,  William R. Gerristead, Jr.

    发明人： Souvik Banerjee ,  William R. Gerristead, Jr.

    IPC分类号： B08B3/08

    CPC分类号： B08B3/08 ,  B08B7/0021 ,  H01L21/67051

    摘要： A carbon dioxide supply method and system for supplying supercritical and subcritical phases of carbon dioxide on-demand to a substrate to create a novel and improved cleaning sequence for removal of contaminants contained in the substrate. The ability for the supply system to deliver vapor, liquid and supercritical phases of carbon dioxide in a specific sequence at predetermined times during a process cleaning sequence produces an improved removal of contaminants from the substrate compared to conventional carbon dioxide cleaning processes.

    摘要翻译： 一种二氧化碳供应方法和系统，用于将二氧化碳的超临界和亚临界相位提供给基板，以产生用于去除基材中所含污染物的新颖且改进的清洗顺序。 在常规二氧化碳清洗过程中，供应系统能够在工艺清洗程序中的预定时间内以特定顺序递送二氧化碳的蒸汽，液体和超临界相的能力，从而提高了与基材相比污染物的去除效果。

    Vapor-assisted cryogenic cleaning
    8.
    发明授权
    Vapor-assisted cryogenic cleaning 有权
    蒸气辅助低温清洗

    公开(公告)号：US06949145B2

    公开(公告)日：2005-09-27

    申请号：US10403147

    申请日：2003-03-31

    申请人： Souvik Banerjee ,  Harlan Forrest Chung

    发明人： Souvik Banerjee ,  Harlan Forrest Chung

    IPC分类号： B08B7/00 ,  B08B7/04 ,  B08B5/00

    CPC分类号： B08B7/0092

    摘要： The present invention is directed towards the use of a reactive gas or vapor of a reactive liquid prior to or in combination with cryogenic cleaning to remove contaminants from the semiconductor surfaces or other substrate surfaces requiring precision cleaning. The reactive gas or vapor is selected according to the contaminants to be removed and the reactivity of the gas or vapor with the contaminants. Preferably, this reaction forms a gaseous byproduct which is removed from the substrate surface by the flow of nitrogen across the surface.

    摘要翻译： 本发明涉及在低温清洁之前或与低温清洁组合的反应性液体的反应气体或蒸汽的使用以从半导体表面或需要精密清洁的其它基底表面去除污染物。 根据待除去的污染物和气体或蒸气与污染物的反应性来选择反应气体或蒸气。 优选地，该反应形成气态副产物，其通过氮气流过表面从基底表面除去。

    Fluid assisted cryogenic cleaning
    10.
    发明申请
    Fluid assisted cryogenic cleaning 审中-公开
    流体辅助低温清洗

    公开(公告)号：US20050217706A1

    公开(公告)日：2005-10-06

    申请号：US10509955

    申请日：2003-04-03

    申请人： Souvik Banerjee ,  Harlan Chung

    发明人： Souvik Banerjee ,  Harlan Chung

    IPC分类号： B08B3/12 ,  B08B7/00 ,  H01L21/02

    CPC分类号： H01L21/02063 ,  B08B7/0092

    摘要： The present invention is directed to fluid assisted cryogenic cleaning of a substrate surface requiring precision cleaning such as semiconductors, metals, and dielectric films. The process comprises the steps of applying a fluid selected from the group consisting of high vapor pressure liquids, reactive gases, and vapors of reactive liquids onto the substrate surface followed by or simultaneously with cryogenic cleaning of the substrate surface to remove contaminants.

    摘要翻译： 本发明涉及要求精密清洗的衬底表面的液体辅助低温清洁，例如半导体，金属和电介质膜。 该方法包括以下步骤：将选自高蒸气压液体，反应性气体和反应性液体蒸气的流体施加到基底表面上，随后或同时对基底表面进行低温清洁以除去污染物。