公开(公告)号：US20080315379A1

公开(公告)日：2008-12-25

申请号：US12213325

申请日：2008-06-18

Applicant: Ku-Young Kim ,  Hyung-gil Baek ,  Jong-gi Lee ,  Sang-wook Park ,  Kun-dae Yeom ,  Dong-hun Lee

Inventor： Ku-Young Kim ,  Hyung-gil Baek ,  Jong-gi Lee ,  Sang-wook Park ,  Kun-dae Yeom ,  Dong-hun Lee

IPC: H01L23/495

CPC classification number: H01L23/49558 ,  H01L23/16 ,  H01L23/3107 ,  H01L2225/1029 ,  H01L2924/0002 ,  H01L2924/3511 ,  H01L2924/00

Abstract: Provided is a semiconductor package and method of manufacturing the same. The semiconductor package may include a semiconductor chip, an encapsulant encapsulating the semiconductor chip, a lead unit, and a partially encapsulated by the encapsulating thermal stress buffer which absorbs thermal stress of the semiconductor chip or the encapsulant.

Abstract translation: 提供一种半导体封装及其制造方法。 半导体封装可以包括半导体芯片，封装半导体芯片的密封剂，引线单元，以及由吸收半导体芯片或密封剂的热应力的封装热应力缓冲部分封装的半导体封装。

公开(公告)号：US20090152946A1

公开(公告)日：2009-06-18

申请号：US12102551

申请日：2008-04-14

Applicant: Young Gun Hong ,  Hyo Young Kim ,  Ku Young Kim ,  Dong Seong Oh ,  Jae Sun Won

Inventor： Young Gun Hong ,  Hyo Young Kim ,  Ku Young Kim ,  Dong Seong Oh ,  Jae Sun Won

IPC: H02J1/00 ,  H02J3/00

CPC classification number: H05B41/2822 ,  Y10T307/297 ,  Y10T307/406

Abstract: Provided is a power supply device including a power supply unit that supplies a driving voltage for driving at least one or more loads; a current balancing unit that maintains a current balance of the driving voltage supplied to the respective loads; a detection unit that detects currents flowing in the current balancing unit through electromagnetic induction so as to output a detection signal; and a control unit that receives the detection signal to judge whether the loads are opened or not and outputs a control signal for controlling the magnitude of the driving voltage.

Abstract translation: 提供一种电源装置，其包括供电单元，该电源单元提供用于驱动至少一个或多个负载的驱动电压; 电流平衡单元，其保持提供给各个负载的驱动电压的电流平衡; 检测单元，其通过电磁感应来检测在所述电流平衡单元中流动的电流，以输出检测信号; 以及控制单元，其接收检测信号以判断负载是否断开，并输出用于控制驱动电压的大小的控制信号。

公开(公告)号：US20080141933A1

公开(公告)日：2008-06-19

申请号：US11984402

申请日：2007-11-16

Applicant: Cha-jea Jo ,  Joong-hyun Baek ,  Hee-jin Lee ,  Ku-young Kim ,  Ju-il Choi

Inventor： Cha-jea Jo ,  Joong-hyun Baek ,  Hee-jin Lee ,  Ku-young Kim ,  Ju-il Choi

IPC: B05C5/00

CPC classification number: C25D5/08 ,  C25D7/123 ,  C25D17/001 ,  C25D21/10 ,  H01L21/2885

Abstract: Provided is a semiconductor plating system for plating a semiconductor object with a desired layer. The semiconductor plating system include a plating tank configured to accommodate a plating solution for use in plating the semiconductor object, and a plating solution induction device configured to induce the plating solution to spirally flow toward the semiconductor object.

Abstract translation: 提供了一种用于对具有期望层的半导体物体进行电镀的半导体电镀系统。 半导体电镀系统包括：电镀槽，其配置为容纳用于电镀半导体物体的电镀液;以及电镀液感应装置，其被配置为使电镀液向半导体物体螺旋状流动。

公开(公告)号：US06780777B2

公开(公告)日：2004-08-24

申请号：US10154078

申请日：2002-05-23

Applicant: Jong-ho Yun ,  Sung-gon Jin ,  Ku-young Kim

Inventor： Jong-ho Yun ,  Sung-gon Jin ,  Ku-young Kim

IPC: H01L21302

CPC classification number: H01L21/76877 ,  H01L21/02112 ,  H01L21/02134 ,  H01L21/28556 ,  H01L21/3124 ,  H01L21/316 ,  H01L21/76838

Abstract: The disclosure pertains to a method for forming a metal layer of a semiconductor device including the steps of: removing a residual native oxide from a contact hole forming a metal junction layer on this contact hole to improve the junction with an inter-layer insulating film, forming a first metal layer in the contact hole to a predetermined thickness under a low pressure to improve step coverage, and forming a second metal layer to a predetermined thickness, thereby planarizing the metal layer. As a result, the step coverage of the bottom surface and side walls of the contact hole is improved, thus preventing defects caused by the disconnection of metal wire of a semiconductor device and improving the economy of the process.

Abstract translation: 本公开涉及一种用于形成半导体器件的金属层的方法，包括以下步骤：从形成该接触孔上的金属接合层的接触孔去除残留的自然氧化物，以改善与层间绝缘膜的接合， 在低压下在接触孔中形成预定厚度的第一金属层以提高台阶覆盖率，并将第二金属层形成为预定厚度，从而平坦化金属层。 结果，提高了接触孔的底面和侧壁的台阶覆盖，从而防止了由于半导体器件的金属线的断开而引起的缺陷，并且提高了工艺的经济性。

公开(公告)号：US20060124280A1

公开(公告)日：2006-06-15

申请号：US10522458

申请日：2003-02-19

Applicant: Young-Duck Lee ,  Young-Ho Hong ,  Ku-Young Kim ,  Hyun-Tae Kim

Inventor： Young-Duck Lee ,  Young-Ho Hong ,  Ku-Young Kim ,  Hyun-Tae Kim

IPC: H05K7/20 ,  F28D15/00

CPC classification number: F28D15/0233 ,  F28D15/046 ,  H01L23/373 ,  H01L23/427 ,  H01L23/467 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Disclosed is a flat plate heat transfer device which includes a flat plate case installed between a heat source and a heat dissipating unit and receiving a working fluid evaporated with absorbing heat at the heat source and condensed with dissipating heat at the heat dissipating unit, and at least one layer of mesh installed in the case and formed so that wires are alternatively woven each other horizontally and vertically in turns. A steam passage through which the working fluid may flow is formed along the surface of the wires from the junctions of the mesh.

Abstract translation: 公开了一种平板传热装置，其包括安装在热源和散热单元之间的平板壳体，并且接收在热源处吸收热量而蒸发的工作流体并与散热单元处的散热一起冷凝 安装在壳体中的至少一层网格形成为使得电线交替地水平和垂直地互相编织。 沿着网的表面从网的接合点形成可以流动工作流体的蒸汽通道。