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    P-type metal oxide semiconductor material and fabrication method thereof
    1.
    发明授权
    P-type metal oxide semiconductor material and fabrication method thereof 有权
    P型金属氧化物半导体材料及其制造方法

    公开(公告)号：US08007694B2

    公开(公告)日：2011-08-30

    申请号：US12431408

    申请日：2009-04-28

    Applicant: Kuo-Chuang Chiu ,  Yi-Wen Kao ,  Shan-Haw Chiou

    Inventor： Kuo-Chuang Chiu ,  Yi-Wen Kao ,  Shan-Haw Chiou

    IPC: H01B1/08 ,  H01B1/12

    CPC classification number: H01B1/08 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02579 ,  H01L21/02628 ,  H01L29/24

    Abstract: A fabrication method for a p-type metal oxide semiconductor material is disclosed, including providing a lithium salt and a zinc salt to be mixed in a solution, wherein to the solution is added a chelating agent to form a metal complex compound comprising lithium and zinc. A heating process for the metal complex compound to form a p-type metal oxide semiconductor material powder is performed, having a formula LixZnx-1 O.

    Abstract translation: 公开了一种p型金属氧化物半导体材料的制造方法，其中包括提供要在溶液中混合的锂盐和锌盐，其中向该溶液中加入螯合剂以形成包含锂和锌的金属络合物 。 进行金属络合物形成p型金属氧化物半导体材料粉末的加热方法，其具有式LixZnx-1 O.

    Ceramic blades and fabrication methods thereof
    2.
    发明授权
    Ceramic blades and fabrication methods thereof 有权
    陶瓷刀片及其制造方法

    公开(公告)号：US07730808B2

    公开(公告)日：2010-06-08

    申请号：US11149316

    申请日：2005-06-10

    Applicant: Kuo-Chuang Chiu ,  Ren-Der Jean ,  Chuan-Lung Lu

    Inventor： Kuo-Chuang Chiu ,  Ren-Der Jean ,  Chuan-Lung Lu

    IPC: B21K11/00

    CPC classification number: B26B9/00 ,  B26B21/58 ,  B26B21/60

    Abstract: Ceramic blades and fabrication methods thereof. A ceramic blade comprises a ceramic body having two sides and an edge. A coating layer is applied on the two sides and the edge, wherein the ceramic body is formed using a scraper to create substantially flat surface and to prevent residual stress damage.

    Abstract translation: 陶瓷刀片及其制造方法。 陶瓷刀片包括具有两侧和边缘的陶瓷体。 在两侧和边缘上施加涂层，其中使用刮刀形成陶瓷体以形成基本平坦的表面并防止残余应力损伤。

    Gas detection system
    4.
    发明申请
    Gas detection system 审中-公开
    气体检测系统

    公开(公告)号：US20090152113A1

    公开(公告)日：2009-06-18

    申请号：US12379089

    申请日：2009-02-12

    Applicant: Kuo-Chuang Chiu ,  Ren-Der Jean

    Inventor： Kuo-Chuang Chiu ,  Ren-Der Jean

    IPC: G01N27/26

    CPC classification number: G01N27/4074

    Abstract: A gas detection system used for detecting a concentration of a gas in a second environment based on a concentration of the gas in a first environment is provided. The gas detection system may include a gas detecting device having two detection module, a first dielectric layer a second dielectric layer and a programmed control module. The control module may detect the voltage outputted by the first detection module to obtain the concentration of the gas in the second environment, when the detected voltage is smaller than a predetermined value. The control module may output a voltage signal to the second detection module and may detect the steady state current corresponding to the voltage signal to obtain the concentration of the gas in the second environment corresponding to the steady state current.

    Abstract translation: 提供了一种用于在第一环境中基于气体浓度来检测第二环境中的气体浓度的气体检测系统。 气体检测系统可以包括具有两个检测模块，第一介电层，第二介电层和编程控制模块的气体检测装置。 当检测到的电压小于预定值时，控制模块可以检测由第一检测模块输出的电压以获得第二环境中的气体浓度。 控制模块可以向第二检测模块输出电压信号，并且可以检测对应于电压信号的稳态电流，以获得对应于稳态电流的第二环境中的气体浓度。

    P-TYPE METAL OXIDE SEMICONDUCTOR MATERIAL AND FABRICATION METHOD THEREOF
    6.
    发明申请
    P-TYPE METAL OXIDE SEMICONDUCTOR MATERIAL AND FABRICATION METHOD THEREOF 有权
    P型金属氧化物半导体材料及其制造方法

    公开(公告)号：US20100148133A1

    公开(公告)日：2010-06-17

    申请号：US12431408

    申请日：2009-04-28

    Applicant: Kuo-Chuang CHIU ,  Yi-Wen KAO ,  Shan-Haw CHIOU

    Inventor： Kuo-Chuang CHIU ,  Yi-Wen KAO ,  Shan-Haw CHIOU

    IPC: H01B1/02

    CPC classification number: H01B1/08 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02579 ,  H01L21/02628 ,  H01L29/24

    Abstract: A fabrication method for a p-type metal oxide semiconductor material is disclosed, including providing a lithium salt and a zinc salt to be mixed in a solution, wherein the solution is added a chelating agent to form a metal complex compound comprising lithium and zinc. A heating process for the metal complex compound to form a p-type metal oxide semiconductor material powder is performed, having a formula LixZnx-1O.

    Abstract translation: 公开了一种用于p型金属氧化物半导体材料的制造方法，其包括提供要在溶液中混合的锂盐和锌盐，其中所述溶液加入螯合剂以形成包含锂和锌的金属络合物。 进行金属配位化合物形成p型金属氧化物半导体材料粉末的加热方法，其具有式LixZnx-10。

    SEMICONDUCTOR STRUCTURES
    7.
    发明申请
    SEMICONDUCTOR STRUCTURES 有权
    半导体结构

    公开(公告)号：US20080277662A1

    公开(公告)日：2008-11-13

    申请号：US12118606

    申请日：2008-05-09

    Applicant: Kuo-Chuang Chiu ,  Tzer-Shen Lin

    Inventor： Kuo-Chuang Chiu ,  Tzer-Shen Lin

    IPC: H01L29/04

    CPC classification number: H01L21/187

    Abstract: A semiconductor structure is disclosed. The semiconductor structure includes a polycrystal substrate, a first single crystal layer formed thereon and a second single crystal layer formed on the first single crystal layer. A variation of coefficients of thermal expansion (CTE) between the first single crystal layer and the polycrystal substrate is less than 25%. There is no lattice mismatch between the first single crystal layer and the polycrystal substrate.

    Abstract translation: 公开了半导体结构。 半导体结构包括多晶基板，形成在其上的第一单晶层和形成在第一单晶层上的第二单晶层。 第一单晶层和多晶基板之间的热膨胀系数（CTE）的变化小于25％。 在第一单晶层和多晶基板之间不存在晶格失配。

    Semiconductor structures
    8.
    发明授权
    Semiconductor structures 有权
    半导体结构

    公开(公告)号：US08026517B2

    公开(公告)日：2011-09-27

    申请号：US12118606

    申请日：2008-05-09

    Applicant: Kuo-Chuang Chiu ,  Tzer-Shen Lin

    Inventor： Kuo-Chuang Chiu ,  Tzer-Shen Lin

    IPC: H01L29/04

    CPC classification number: H01L21/187

    Abstract: A semiconductor structure is disclosed. The semiconductor structure includes a polycrystal substrate, a first single crystal layer formed thereon and a second single crystal layer formed on the first single crystal layer. A variation of coefficients of thermal expansion (CTE) between the first single crystal layer and the polycrystal substrate is less than 25%. There is no lattice mismatch between the first single crystal layer and the polycrystal substrate.

    Abstract translation: 公开了半导体结构。 半导体结构包括多晶基板，形成在其上的第一单晶层和形成在第一单晶层上的第二单晶层。 第一单晶层和多晶基板之间的热膨胀系数（CTE）的变化小于25％。 在第一单晶层和多晶基板之间不存在晶格失配。

    SOLAR CELL DEVICE AND METHOD FOR FABRICATING THE SAME
    9.
    发明申请
    SOLAR CELL DEVICE AND METHOD FOR FABRICATING THE SAME 审中-公开
    太阳能电池装置及其制造方法

    公开(公告)号：US20100288348A1

    公开(公告)日：2010-11-18

    申请号：US12545769

    申请日：2009-08-21

    Applicant: Chin-Ching Lin ,  Mei-Ching Chiang ,  Hsiang-Chuan Chen ,  Chao-Jen Ho ,  Kuo-Chuang Chiu

    Inventor： Chin-Ching Lin ,  Mei-Ching Chiang ,  Hsiang-Chuan Chen ,  Chao-Jen Ho ,  Kuo-Chuang Chiu

    IPC: H01L31/0376 ,  H01L31/18 ,  H01L31/105

    CPC classification number: H01L31/1884 ,  H01L31/022466 ,  Y02E10/50

    Abstract: A solar cell device is provided, including a transparent substrate, a composite transparent conductive layer disposed over the transparent substrate, a photovoltaic element formed over the composite transparent conductive layer, and an electrode layer disposed over the photovoltaic element. In one embodiment, the composite transparent conductive layer includes a first transparent conductive layer and a second transparent conductive layer sequentially stacked over the transparent substrate, and the first transparent conductive layer is made of lithium and fluorine-codoped tin oxide and the second transparent conductive layer is made of a material selected from a group consisting of zinc oxide and titanium dioxide.

    Abstract translation: 提供一种太阳能电池装置，包括透明基板，设置在透明基板上的复合透明导电层，形成在复合透明导电层上的光电元件以及设置在光电元件上的电极层。 在一个实施例中，复合透明导电层包括顺序层叠在透明基板上的第一透明导电层和第二透明导电层，第一透明导电层由锂和氟共掺杂的氧化锡制成，第二透明导电层 由选自氧化锌和二氧化钛的材料制成。

    GAS SENSING MATERIAL AND GAS SENSOR EMPLOYING THE SAME
    10.
    发明申请
    GAS SENSING MATERIAL AND GAS SENSOR EMPLOYING THE SAME 审中-公开
    气体传感材料和使用其的气体传感器

    公开(公告)号：US20100163429A1

    公开(公告)日：2010-07-01

    申请号：US12477876

    申请日：2009-06-03

    Applicant: Kuo-Chuang Chiu ,  Ren-Der Jean ,  Jinn-Shing King ,  Ming-Tsung Hong ,  Shur-Fen Liu

    Inventor： Kuo-Chuang Chiu ,  Ren-Der Jean ,  Jinn-Shing King ,  Ming-Tsung Hong ,  Shur-Fen Liu

    IPC: G01N27/26

    CPC classification number: G01N27/125

    Abstract: Gas sensing material and gas sensor employing the same are provided. The gas sensing material includes an inorganic metal oxide and an organic polymer, wherein the organic polymer includes a repeat unit having the structure of wherein R1 and R2 are an independent alkyl group, alkoxy group, alkoxycarbonyl group, aryl group, heteroaryl group, or aliphatic group.

    Abstract translation: 提供了气体传感材料和采用该传感材料的气体传感器。 气体传感材料包括无机金属氧化物和有机聚合物，其中有机聚合物包括具有以下结构的重复单元：其中R 1和R 2是独立的烷基，烷氧基，烷氧基羰基，芳基，杂芳基或脂族基 组。

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