Image sensor with high conversion efficiency
    2.
    发明申请
    Image sensor with high conversion efficiency 有权
    图像传感器具有高转换效率

    公开(公告)号:US20090200627A1

    公开(公告)日:2009-08-13

    申请号:US12321665

    申请日:2009-01-23

    IPC分类号: H01L27/00 H01J40/14

    摘要: An image sensor includes a photoelectric converter, a reflector, and a charge carrier guiding region. The reflector is disposed under the photoelectric converter, and the charge carrier guiding region is disposed between the photoelectric converter and the reflector. The reflector reflects incident light passed by the photoelectric converter back through the photoelectric converter for increasing photoelectric conversion efficiency and reduced crosstalk. The charge carrier guiding region dissipates undesired charge carriers for further increasing photoelectric conversion efficiency.

    摘要翻译: 图像传感器包括光电转换器,反射器和电荷载体引导区域。 反射器设置在光电转换器下方,电荷载体引导区域设置在光电转换器和反射器之间。 反射镜将通过光电转换器的入射光反射回光电转换器,以提高光电转换效率并降低串扰。 电荷载流子引导区消耗不期望的电荷载流子,以进一步提高光电转换效率。

    Image sensor with high conversion efficiency
    6.
    发明授权
    Image sensor with high conversion efficiency 有权
    图像传感器具有高转换效率

    公开(公告)号:US08053821B2

    公开(公告)日:2011-11-08

    申请号:US12321665

    申请日:2009-01-23

    IPC分类号: H01L31/062

    摘要: An image sensor includes a photoelectric converter, a reflector, and a charge carrier guiding region. The reflector is disposed under the photoelectric converter, and the charge carrier guiding region is disposed between the photoelectric converter and the reflector. The reflector reflects incident light passed by the photoelectric converter back through the photoelectric converter for increasing photoelectric conversion efficiency and reduced crosstalk. The charge carrier guiding region dissipates undesired charge carriers for further increasing photoelectric conversion efficiency.

    摘要翻译: 图像传感器包括光电转换器,反射器和电荷载体引导区域。 反射器设置在光电转换器下方,电荷载体引导区域设置在光电转换器和反射器之间。 反射镜将通过光电转换器的入射光反射回光电转换器,以提高光电转换效率并降低串扰。 电荷载流子引导区消耗不期望的电荷载流子,以进一步提高光电转换效率。

    Pixel circuit arrays
    7.
    发明申请
    Pixel circuit arrays 审中-公开
    像素电路阵列

    公开(公告)号:US20090219266A1

    公开(公告)日:2009-09-03

    申请号:US12379142

    申请日:2009-02-13

    IPC分类号: G09G5/00

    摘要: A pixel circuit array may include pixel circuits and/or a global reset transistor that has a first end connected to a second end of a reset transistor and is turned on or off in response a global reset signal. Each pixel circuit may include: a transmission transistor that may receive and/or transmit photocharges through ends of the transmission transistor in response to a transmission control signal; the reset transistor that may have a first end connected to the second end of the transmission transistor and may be turned on or off in response a reset control signal; a source-follower transistor that may receive a signal from the second end of the reset transistor and/or may be turned on or off in response the received signal; and/or a selection transistor that may be connected to the source-follower transistor and/or may be turned on or off in response a selection control signal.

    摘要翻译: 像素电路阵列可以包括像素电路和/或全局复位晶体管,其具有连接到复位晶体管的第二端的第一端,并响应于全局复位信号导通或截止。 每个像素电路可以包括:传输晶体管,其可以响应于传输控制信号而通过传输晶体管的端部接收和/或传输光电荷; 复位晶体管可以具有连接到透射晶体管的第二端的第一端,并且可以响应于复位控制信号而导通或截止; 可以从复位晶体管的第二端接收信号和/或响应于接收信号而导通或关断的源极跟随器晶体管; 和/或可以连接到源极跟随器晶体管的选择晶体管和/或可以响应于选择控制信号而导通或截止。

    Image sensors for zoom lenses and fabricating methods thereof
    9.
    发明申请
    Image sensors for zoom lenses and fabricating methods thereof 审中-公开
    用于变焦镜头的图像传感器及其制造方法

    公开(公告)号:US20080203507A1

    公开(公告)日:2008-08-28

    申请号:US11892462

    申请日:2007-08-23

    摘要: An image sensor includes a semiconductor substrate on which a plurality of photo diodes are formed. A plurality of interlayer dielectrics are formed above the semiconductor substrate, and a plurality of metal lines are formed on each of the interlayer dielectrics. A plurality of micro lenses are formed above the uppermost one of the interlayer dielectrics. The light passing through the zoom lenses is incident on the respective micro lenses. The plurality metal lines formed on at least one of the plurality of interlayer dielectrics have the same width.

    摘要翻译: 图像传感器包括其上形成有多个光电二极管的半导体基板。 在半导体衬底上形成多个层间电介质,并且在每个层间电介质上形成多个金属线。 多层微透镜形成在最上面的层间电介质之上。 通过变焦镜头的光入射到相应的微透镜上。 形成在多个层间电介质中的至少一个的多个金属线具有相同的宽度。