公开(公告)号：US08101997B2

公开(公告)日：2012-01-24

申请号：US12111749

申请日：2008-04-29

申请人： Armin Willmeroth ,  Michael Rueb

发明人： Armin Willmeroth ,  Michael Rueb

IPC分类号： H01L29/66

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/66727 ,  H01L29/7395

摘要： A semiconductor device with a charge carrier compensation structure in a semiconductor body and to a method for its production. The semiconductor body includes drift zones of a first conduction type and charge compensation zones of a second conduction type complementing the first conduction type. The drift zones include a semiconductor material applied in epitaxial growth zones, wherein the epitaxial growth zones include an epitaxially grown semiconductor material which is non-doped to lightly doped. Towards the substrate, the epitaxial growth zones are provided with a first conduction type incorporated by ion implantation over the entire surface and with selectively introduced doping material zones of a second, complementary conduction type. Towards the front side, the epitaxial growth zones are provided with a second, complementary conduction type incorporated by ion implantation over the entire surface and with selectively introduced doping material zones of the first conduction type.

摘要翻译： 在半导体本体中具有电荷载流子补偿结构的半导体器件及其制造方法。 半导体本体包括第一导电类型的漂移区和补充第一导电类型的第二导电类型的电荷补偿区。 漂移区包括施加在外延生长区中的半导体材料，其中外延生长区包括未掺杂以轻掺杂的外延生长的半导体材料。 朝向衬底，外延生长区域被提供有在整个表面上通过离子注入并入的第一导电类型，并且选择性地引入第二互补导电类型的掺杂材料区域。 朝向前侧，外延生长区设置有通过在整个表面上的离子注入并入并且选择性地引入第一导电类型的掺杂材料区的第二互补导电类型。

公开(公告)号：US07868396B2

公开(公告)日：2011-01-11

申请号：US11700555

申请日：2007-01-31

申请人： Michael Rueb ,  Franz Hirler

发明人： Michael Rueb ,  Franz Hirler

IPC分类号： H01L29/76

CPC分类号： H01L29/7802 ,  H01L29/0611 ,  H01L29/0615 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/408 ,  H01L29/41766 ,  H01L29/6634 ,  H01L29/66727 ,  H01L29/7396 ,  H01L29/7813 ,  H01L29/7816 ,  H01L29/8083 ,  H01L29/872

摘要： A power semiconductor component includes a drift zone in a semiconductor body, a component junction and a compensation zone. The component junction is disposed between the drift zone and a further component zone, which is configured such that when a blocking voltage is applied to the component junction, a space charge zone forms extending generally in a first direction in the drift zone. The compensation zone is disposed adjacent to the drift zone in a second direction and includes at least one high-dielectric material having a temperature-dependent dielectric constant. The temperature dependence of the compensation zone varies in the second direction.

摘要翻译： 功率半导体元件包括半导体本体中的漂移区，元件结和补偿区。 元件结设置在漂移区和另一组件区之间，其被配置为使得当阻挡电压施加到元件结时，空间电荷区通常在漂移区中沿第一方向延伸。 补偿区在第二方向上与漂移区相邻设置，并且包括至少一个具有温度依赖介电常数的高电介质材料。 补偿区域的温度依赖性在第二个方向上变化。

公开(公告)号：US06828609B2

公开(公告)日：2004-12-07

申请号：US10455834

申请日：2003-06-06

申请人： Gerald Deboy ,  Dirk Ahlers ,  Helmut Strack ,  Michael Rueb ,  Hans Martin Weber

发明人： Gerald Deboy ,  Dirk Ahlers ,  Helmut Strack ,  Michael Rueb ,  Hans Martin Weber

IPC分类号： H01L2980

CPC分类号： H01L29/7816 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/41766 ,  H01L29/4232 ,  H01L29/4238 ,  H01L29/7801 ,  H01L29/7802

摘要： A semiconductor component having a semiconductor body comprises a blocking pn junction, a source zone of a first conductivity type and bordering on a zone forming the blocking pn junction of a second conductivity type complementary to the first conductivity type, and a drain zone of the first conductivity type. The side of the zone of the second conductivity type faces the drain zone forming a first surface, and in the region between the first surface and a second surface areas of the first and second conductivity type are nested in one another. The areas of the first and second conductivity type are variably so doped that near the first surface doping atoms of the second conductivity type predominate, and near the second surface doping atoms of the first conductivity type predominate. Furthermore a plurality of floating zones of the first and second conductivity type is provided.

摘要翻译： 具有半导体主体的半导体部件包括阻挡pn结，第一导电类型的源极区域，并且与形成与第一导电类型互补的第二导电类型的阻挡pn结的区域接合，并且第一导电类型的漏极区域 导电类型。 第二导电类型的区域侧面对排水区，形成第一表面，并且在第一表面和第一和第二导电类型的第二表面区域之间的区域彼此嵌套。 第一和第二导电类型的区域是可变地掺杂的，在第一表面附近，第二导电类型的掺杂原子占主导地位，并且在第二表面附近，第一导电类型的掺杂原子占主导地位。 此外，提供了第一和第二导电类型的多个浮动区域。

公开(公告)号：US06756162B2

公开(公告)日：2004-06-29

申请号：US10135474

申请日：2002-04-30

申请人： Michael Rueb

发明人： Michael Rueb

IPC分类号： G03F900

CPC分类号： H01L21/266 ,  Y10T428/24273 ,  Y10T428/24322

摘要： A stencil mask for high- and ultrahigh-energy implantation of semiconductor wafers has a substrate with implantation openings through which the implantation energy can be projected onto a wafer that will be implanted. The critical dimension of the implantation openings is defined in a manner dependent on the respective implantation energy.

摘要翻译： 用于半导体晶片的高能量和超高能量注入的模板掩模具有带有注入开口的衬底，通过该衬底将注入能量投射到待植入的晶片上。 注入开口的临界尺寸取决于相应的注入能量来定义。

公开(公告)号：US20120088353A1

公开(公告)日：2012-04-12

申请号：US13327941

申请日：2011-12-16

申请人： Armin Willmeroth ,  Michael Rueb

发明人： Armin Willmeroth ,  Michael Rueb

IPC分类号： H01L21/78

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/66727 ,  H01L29/7395

摘要： A semiconductor device with a charge carrier compensation structure in a semiconductor body and to a method for its production. The semiconductor body includes drift zones of a first conduction type and charge compensation zones of a second conduction type complementing the first conduction type. The drift zones include a semiconductor material applied in epitaxial growth zones, wherein the epitaxial growth zones include an epitaxially grown semiconductor material which is non-doped to lightly doped. Towards the substrate, the epitaxial growth zones are provided with a first conduction type incorporated by ion implantation over the entire surface and with selectively introduced doping material zones of a second, complementary conduction type. Towards the front side, the epitaxial growth zones are provided with a second, complementary conduction type incorporated by ion implantation over the entire surface and with selectively introduced doping material zones of the first conduction type.

摘要翻译： 在半导体本体中具有电荷载流子补偿结构的半导体器件及其制造方法。 半导体本体包括第一导电类型的漂移区和补充第一导电类型的第二导电类型的电荷补偿区。 漂移区包括施加在外延生长区中的半导体材料，其中外延生长区包括未掺杂以轻掺杂的外延生长的半导体材料。 朝向衬底，外延生长区域被提供有在整个表面上通过离子注入并入的第一导电类型，并且选择性地引入第二互补导电类型的掺杂材料区域。 朝向前侧，外延生长区设置有通过在整个表面上的离子注入并入并且选择性地引入第一导电类型的掺杂材料区的第二互补导电类型。

公开(公告)号：US20090159927A1

公开(公告)日：2009-06-25

申请号：US11963057

申请日：2007-12-21

申请人： Armin Willmeroth ,  Winfried Kaindl ,  Carolin Tolksdorf ,  Michael Rueb

发明人： Armin Willmeroth ,  Winfried Kaindl ,  Carolin Tolksdorf ,  Michael Rueb

IPC分类号： H01L29/739 ,  H01L29/78 ,  H01L21/331 ,  H01L21/336

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0839 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/7396

摘要： An integrated circuit device includes a semiconductor body fitted with a first electrode and a second electrode on opposite surfaces. A control electrode on an insulating layer controls channel regions of body zones for a current flow between the two electrodes. A drift section adjoining the channel regions comprises drift zones and charge compensation zones. A part of the charge compensation zones includes conductively connected charge compensation zones electrically connected to the first electrode. Another part includes nearly-floating charge compensation zones, so that an increased control electrode surface has a monolithically integrated additional capacitance CZGD in a cell region of the semiconductor device.

摘要翻译： 集成电路器件包括在相对表面上装配有第一电极和第二电极的半导体本体。 绝缘层上的控制电极控制两个电极之间电流的体区的通道区域。 与沟道区相邻的漂移区包括漂移区和电荷补偿区。 电荷补偿区域的一部分包括与第一电极电连接的导电连接的电荷补偿区。 另一部分包括几乎浮动的电荷补偿区，使得增加的控制电极表面在半导体器件的单元区域中具有单片集成的附加电容CZGD。

公开(公告)号：US20090085064A1

公开(公告)日：2009-04-02

申请号：US11862661

申请日：2007-09-27

申请人： Michael Rueb ,  Michael Treu ,  Armin Willmeroth ,  Franz Hirler

发明人： Michael Rueb ,  Michael Treu ,  Armin Willmeroth ,  Franz Hirler

IPC分类号： H01L29/778 ,  H01L21/336

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/165 ,  H01L29/267 ,  H01L29/41775 ,  H01L29/66068

摘要： A semiconductor device includes a first semiconductor substrate of a first band-gap material and a second semiconductor substrate of a second band-gap material. The second band-gap material has a lower band-gap than the first band-gap material. A heterojunction is formed between the first semiconductor substrate and the second semiconductor substrate substantially in a first plane. The semiconductor device further includes, in a cross-section which is perpendicular to the first plane, a first semiconductor region of a first conductivity type and a second semiconductor region of the first conductivity type both of which extend from the second semiconductor substrate at least partially into the first semiconductor substrate. The first and second semiconductor regions are spaced in the first semiconductor substrate from each other in a direction parallel to the first plane by a first distance which is arranged in an area proximate to the heterojunction and which is larger than a second distance which is arranged in an area distal to the heterojunction.

摘要翻译： 半导体器件包括第一带隙材料的第一半导体衬底和第二带隙材料的第二半导体衬底。 第二带隙材料具有比第一带隙材料低的带隙。 基本上在第一平面中在第一半导体衬底和第二半导体衬底之间形成异质结。 所述半导体器件还包括垂直于所述第一平面的横截面，所述第一导电类型的第一半导体区域和所述第一导电类型的第二半导体区域从所述第二半导体衬底至少部分地延伸 进入第一半导体衬底。 第一和第二半导体区域在第一半导体衬底中沿平行于第一平面的方向彼此间隔开第一距离，第一距离布置在接近异质结的区域中，并且大于第二距离 远离异质结的区域。

公开(公告)号：US20080067626A1

公开(公告)日：2008-03-20

申请号：US11834154

申请日：2007-08-06

申请人： Franz Hirler ,  Thoralf Kautzsch ,  Anton Mauder ,  Michael Rueb ,  Hans-Joachim Schulze ,  Helmut Strack ,  Armin Willmeroth

发明人： Franz Hirler ,  Thoralf Kautzsch ,  Anton Mauder ,  Michael Rueb ,  Hans-Joachim Schulze ,  Helmut Strack ,  Armin Willmeroth

IPC分类号： H01L29/94 ,  H01L21/76

CPC分类号： H01L21/76224 ,  H01L21/3247 ,  H01L29/0653 ,  H01L29/407 ,  H01L29/66621 ,  H01L29/7803 ,  H01L29/7804

摘要： A semiconductor device, in which a first trench section is produced proceeding from a surface of a semiconductor body into the semiconductor body. A semiconductor layer is produced above the surface and above the first trench section. A further trench section is produced in the semiconductor layer in such a way that the first trench section and the further trench section form a continuous trench structure.

摘要翻译： 一种半导体器件，其中制造从半导体本体的表面进入半导体本体的第一沟槽部分。 在表面上方和第一沟槽部分之上产生半导体层。 在半导体层中产生另一沟槽部分，使得第一沟槽部分和另外的沟槽部分形成连续的沟槽结构。

公开(公告)号：US07132726B2

公开(公告)日：2006-11-07

申请号：US11037273

申请日：2005-01-18

申请人： Michael Rueb ,  Thomas Detzel

发明人： Michael Rueb ,  Thomas Detzel

IPC分类号： H01L29/00 ,  H01L23/52

CPC分类号： H01L23/5283 ,  H01L23/528 ,  H01L29/41741 ,  H01L29/41758 ,  H01L29/456 ,  H01L29/7801 ,  H01L29/7802 ,  H01L2924/0002 ,  H01L2924/00

摘要： An integrated semiconductor circuit having a first and a second portion of a substrate, in which a power semiconductor circuit structure and a logic circuit structure are respectively formed. The metallization having a power metal layer and an in relative terms thinner logic metal layer, the two metal layers being located directly above one another in this order, without an intermetal dielectric between them, only in the first portion above the power semiconductor circuit structure, and an uninterrupted conductive barrier layer being located at least between the power metal layer and the intermediate oxide layer and also between the power metal layer and the contact regions and electrode portions of the power semiconductor circuit structure which it contact-connects, and to a method for fabricating it.

摘要翻译： 一种具有分别形成功率半导体电路结构和逻辑电路结构的基板的第一和第二部分的集成半导体电路。 金属化具有功率金属层，并且相对于较薄的逻辑金属层，两个金属层仅在功率半导体电路结构上方的第一部分中以这种顺序依次位于彼此之间而没有金属间电介质， 以及不间断的导电阻挡层，其至少位于功率金属层和中间氧化物层之间，并且还位于功率金属层与其接触连接的功率半导体电路结构的接触区域和电极部分之间，以及方法 用于制造它。

公开(公告)号：US5683184A

公开(公告)日：1997-11-04

申请号：US504814

申请日：1995-07-20

申请人： Manfred Striedacher ,  Michael Rueb

发明人： Manfred Striedacher ,  Michael Rueb

IPC分类号： F16C23/04 ,  F16C33/10 ,  F16C33/74 ,  H02K5/167

CPC分类号： F16C33/103 ,  F16C23/04 ,  F16C33/74 ,  H02K5/1672

摘要： In order to ensure full-surface thrust contact and coverage despite a low production and assembly outlay, even if the bearing is mounted slightly askew, a thrust and cover washer may be used which includes an inelastic first annular washer part axially thrusting and not contacting the rotor shaft, and an elastic second annular washer part positively joined thereto and resting sealingly on the rotor shaft. The first annular washer part may advantageously be made of plastic and the second annular washer part may advantageously be made of an elastomer.

摘要翻译： 为了确保全面的推力接触和覆盖，尽管生产和组装费用低，即使轴承稍微倾斜安装，也可以使用推力和盖板垫圈，其包括非弹性的第一环形垫圈部件，其轴向推压并且不接触 转子轴和与其正确接合并且密封地固定在转子轴上的弹性第二环形垫圈部分。 第一环形垫圈部件可以有利地由塑料制成，并且第二环形垫圈部件可以有利地由弹性体制成。