公开(公告)号：US08187449B2

公开(公告)日：2012-05-29

申请号：US12459133

申请日：2009-06-26

申请人： Hiroki Domon ,  Yusuke Ogawa ,  Masaaki Kato ,  Takamichi Kishi ,  Naoya Hayamizu ,  Makiko Tange ,  Yoshiaki Kurokawa ,  Nobuo Kobayashi

发明人： Hiroki Domon ,  Yusuke Ogawa ,  Masaaki Kato ,  Takamichi Kishi ,  Naoya Hayamizu ,  Makiko Tange ,  Yoshiaki Kurokawa ,  Nobuo Kobayashi

IPC分类号： C25B1/28

CPC分类号： C11D11/007 ,  C11D7/08 ,  C11D11/0047 ,  C25B1/285 ,  G03F7/423 ,  H01L21/31133

摘要： The cleaning method by electrolytic sulfuric acid and the manufacturing method of semiconductor device comprising: the process in which the first sulfuric acid solution is supplied from outside to the sulfuric acid electrolytic cell to form the first electrolytic sulfuric acid containing oxidizing agent in the sulfuric acid electrolytic cell; the process in which the second sulfuric acid solution, which is higher in concentration than said the first sulfuric acid solution previously supplied, is supplied from outside to said sulfuric acid electrolytic cell; said the second sulfuric acid solution and the first electrolytic sulfuric acid are mixed in said sulfuric acid electrolytic cell; and electrolysis is performed to form the cleaning solution comprising the second electrolytic sulfuric acid containing sulfuric acid and oxidation agent in said sulfuric acid electrolytic cell and the process in which cleaning treatment is performed for the cleaning object with said cleaning solution.

摘要翻译： 电解硫酸的清洗方法以及半导体装置的制造方法，其特征在于，包括：从硫酸电解槽向外部供给第一硫酸溶液，在硫酸电解液中形成含有第一电解硫酸的氧化剂的工序 细胞; 其中比所述先前供应的所述第一硫酸溶液浓度高的第二硫酸溶液从外部供应到所述硫酸电解池的过程; 所述第二硫酸溶液和所述第一电解硫酸在所述硫酸电解池中混合; 并且进行电解以在所述硫酸电解池中形成包含含有硫酸和氧化剂的第二电解硫酸的清洗溶液，以及对所述清洁溶液进行清洁对象的清洁处理的处理。

公开(公告)号：US20090321252A1

公开(公告)日：2009-12-31

申请号：US12459134

申请日：2009-06-26

申请人： Masaaki Kato ,  Yoshiyuki Seya ,  Naoya Hayamizu ,  Makiko Tange ,  Yoshiaki Kurokawa ,  Nobuo Kobayashi

发明人： Masaaki Kato ,  Yoshiyuki Seya ,  Naoya Hayamizu ,  Makiko Tange ,  Yoshiaki Kurokawa ,  Nobuo Kobayashi

IPC分类号： C25B15/08 ,  C25B9/00

CPC分类号： C25B1/285 ,  C25B9/00

摘要： In a sulfuric acid electrolytic cell to electrolyze sulfuric acid supplied to an anode compartment and a cathode compartment comprising a diaphragm, said anode compartment and said cathode compartment separated by said diaphragm, a cathode provided in said cathode compartment and a conductive diamond anode provided in said anode compartment, as said conductive diamond anode, a conductive diamond film is formed on the surface of said conductive substrate, the rear face of said conductive substrate is pasted, with conductive paste, on an current collector comprising a rigid body with size equal to, or larger than, said conductive substrate, an anode compartment frame constituting said anode compartment is contacted via gasket with the periphery on the side of the conductive diamond film of said diamond anode, said diaphragm is contacted with the front face of said anode compartment, further, with the front face of said diaphragm, the cathode compartment frame constituting said cathode compartment, a gasket, and said cathode are contacted in sequence, the rear face of said cathode is pasted with conductive paste to the current collector comprising a rigid body with size equal to, or larger than, said cathode and electric power is supplied from one current collector to the other current collector via said conductive paste.

摘要翻译： 在硫酸电解池中，电解供给阳极室的硫酸和包含隔膜的阴极室，由所述隔膜隔开的所述阳极室和所述阴极室分别设置在所述阴极室中的阴极和设在所述阴极室中的导电金刚石阳极 阳极室，作为所述导电金刚石阳极，在所述导电衬底的表面上形成导电金刚石膜，所述导电衬底的背面用导电膏粘贴在集电器上，该集电器包括尺寸等于或等于的刚体， 或大于所述导电基底，构成所述阳极室的阳极室框架通过垫圈与所述金刚石阳极的导电金刚石膜侧面的周边接触，所述隔膜与所述阳极室的前表面接触 与所述隔膜的前面相连，阴极隔室框架构成所述阴极co 间隔件，垫圈和所述阴极按顺序接触，所述阴极的背面用导电膏粘贴到集电器，该集电器包括尺寸等于或大于所述阴极的刚体，并且电力从一个 集电器经由所述导电浆料到另一个集电器。

公开(公告)号：US20110073490A1

公开(公告)日：2011-03-31

申请号：US12880549

申请日：2010-09-13

申请人： Naoya Hayamizu ,  Makiko Tange ,  Masaaki Kato ,  Hiroki Domon ,  Yusuke Ogawa ,  Yoshiaki Kurokawa ,  Nobuo Kobayashi

发明人： Naoya Hayamizu ,  Makiko Tange ,  Masaaki Kato ,  Hiroki Domon ,  Yusuke Ogawa ,  Yoshiaki Kurokawa ,  Nobuo Kobayashi

IPC分类号： C25F1/00 ,  C25F7/00

CPC分类号： C25B1/28 ,  G03F7/423

摘要： According to one embodiment, a cleaning method is disclosed. The method can produce an oxidizing solution including an oxidizing substance by electrolyzing a dilute sulfuric acid solution. In addition, the method can supply a highly concentrated inorganic acid solution individually, sequentially, or substantially simultaneously with the oxidizing solution to a surface of an object to be cleaned.

摘要翻译： 根据一个实施例，公开了一种清洁方法。 该方法可以通过电解稀硫酸溶液来产生包含氧化物质的氧化溶液。 此外，该方法可以将高度浓缩的无机酸溶液与氧化溶液单独，依次或基本上同时地供给到待清洁物体的表面。

公开(公告)号：US20090325390A1

公开(公告)日：2009-12-31

申请号：US12459133

申请日：2009-06-26

申请人： Hiroki Domon ,  Yusuke Ogawa ,  Masaaki Kato ,  Takamichi Kishi ,  Naoya Hayamizu ,  Makiko Tange ,  Yoshiaki Kurokawa ,  Nobuo Kobayashi

发明人： Hiroki Domon ,  Yusuke Ogawa ,  Masaaki Kato ,  Takamichi Kishi ,  Naoya Hayamizu ,  Makiko Tange ,  Yoshiaki Kurokawa ,  Nobuo Kobayashi

IPC分类号： H01L21/20 ,  C25B1/22 ,  C11D7/34

CPC分类号： C11D11/007 ,  C11D7/08 ,  C11D11/0047 ,  C25B1/285 ,  G03F7/423 ,  H01L21/31133

摘要： The cleaning method by electrolytic sulfuric acid and the manufacturing method of semiconductor device comprising: the process in which the first sulfuric acid solution is supplied from outside to the sulfuric acid electrolytic cell to form the first electrolytic sulfuric acid containing oxidizing agent in the sulfuric acid electrolytic cell; the process in which the second sulfuric acid solution, which is higher in concentration than said the first sulfuric acid solution previously supplied, is supplied from outside to said sulfuric acid electrolytic cell; said the second sulfuric acid solution and the first electrolytic sulfuric acid are mixed in said sulfuric acid electrolytic cell; and electrolysis is performed to form the cleaning solution comprising the second electrolytic sulfuric acid containing sulfuric acid and oxidation agent in said sulfuric acid electrolytic cell and the process in which cleaning treatment is performed for the cleaning object with said cleaning solution.

摘要翻译： 电解硫酸的清洗方法以及半导体装置的制造方法，其特征在于，包括：从硫酸电解槽向外部供给第一硫酸溶液，在硫酸电解液中形成含有第一电解硫酸的氧化剂的工序 细胞; 其中比所述先前供应的所述第一硫酸溶液浓度高的第二硫酸溶液从外部供应到所述硫酸电解池的过程; 所述第二硫酸溶液和所述第一电解硫酸在所述硫酸电解池中混合; 并且进行电解以在所述硫酸电解池中形成包含含有硫酸和氧化剂的第二电解硫酸的清洗溶液，以及对所述清洁溶液进行清洁对象的清洁处理的处理。

公开(公告)号：US08519371B2

公开(公告)日：2013-08-27

申请号：US12876870

申请日：2010-09-07

申请人： Hiroyuki Fukumizu ,  Naoya Hayamizu ,  Makiko Tange

发明人： Hiroyuki Fukumizu ,  Naoya Hayamizu ,  Makiko Tange

IPC分类号： H01L29/02

CPC分类号： H01L27/101 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/124 ,  H01L45/146 ,  H01L45/147 ,  H01L45/149 ,  H01L45/1666 ,  H01L45/1675

摘要： According to one embodiment, a nonvolatile memory device includes a substrate, a first electrode, a second electrode, and a memory. The first electrode is provided on the substrate. The second electrode crosses on the first electrode. The memory portion is provided between the first electrode and the second electrode. At least one of an area of a first memory portion surface of the memory portion opposed to the first electrode and an area of a second memory portion surface of the memory portion opposed to the second electrode is smaller than an area of a cross surface of the first electrode and the second electrode opposed to each other by the crossing.

摘要翻译： 根据一个实施例，非易失性存储器件包括衬底，第一电极，第二电极和存储器。 第一电极设置在基板上。 第二电极在第一电极上交叉。 存储部设置在第一电极和第二电极之间。 与第一电极相对的存储部分的第一存储器部分表面的区域和与第二电极相对的存储器部分的第二存储器部分表面的区域中的至少一个小于第二电极的横截面的面积 第一电极和第二电极通过交叉相互相对。

公开(公告)号：US20110073489A1

公开(公告)日：2011-03-31

申请号：US12880450

申请日：2010-09-13

申请人： Naoya Hayamizu ,  Makiko Tange ,  Yoshiaki Kurokawa ,  Nobuo Kobayashi ,  Masaaki Kato ,  Yusuke Ogawa ,  Hiroki Domon

发明人： Naoya Hayamizu ,  Makiko Tange ,  Yoshiaki Kurokawa ,  Nobuo Kobayashi ,  Masaaki Kato ,  Yusuke Ogawa ,  Hiroki Domon

IPC分类号： C25F1/00 ,  C25F7/00

CPC分类号： H01L21/31133 ,  G03F7/423 ,  H01L21/67051

摘要： According to embodiments, a cleaning liquid includes an oxidizing substance and hydrofluoric acid and exhibiting acidity. A cleaning method is disclosed. The method includes producing an oxidizing solution including an oxidizing substance by one selected from electrolyzing a sulfuric acid solution, electrolyzing hydrofluoric acid added to a sulfuric acid solution, and mixing a sulfuric acid solution with aqueous hydrogen peroxide. The method includes supplying the oxidizing solution and hydrofluoric acid to a surface of an object to be cleaned.

摘要翻译： 根据实施方案，清洗液体包含氧化物质和氢氟酸并具有酸性。 公开了一种清洁方法。 该方法包括：通过选择电解硫酸溶液，电解加入到硫酸溶液中的氢氟酸，并将硫酸溶液与过氧化氢水溶液混合，制备包含氧化物质的氧化溶液。 该方法包括将氧化溶液和氢氟酸供给到待清洁物体的表面。

公开(公告)号：US20110037045A1

公开(公告)日：2011-02-17

申请号：US12876870

申请日：2010-09-07

申请人： Hiroyuki Fukumizu ,  Naoya Hayamizu ,  Makiko Tange

发明人： Hiroyuki Fukumizu ,  Naoya Hayamizu ,  Makiko Tange

IPC分类号： H01L45/00 ,  H01L21/02

CPC分类号： H01L27/101 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/124 ,  H01L45/146 ,  H01L45/147 ,  H01L45/149 ,  H01L45/1666 ,  H01L45/1675

摘要： According to one embodiment, a nonvolatile memory device includes a substrate, a first electrode, a second electrode, and a memory. The first electrode is provided on the substrate. The second electrode crosses on the first electrode. The memory portion is provided between the first electrode and the second electrode. At least one of an area of a first memory portion surface of the memory portion opposed to the first electrode and an area of a second memory portion surface of the memory portion opposed to the second electrode is smaller than an area of a cross surface of the first electrode and the second electrode opposed to each other by the crossing.

摘要翻译： 根据一个实施例，非易失性存储器件包括衬底，第一电极，第二电极和存储器。 第一电极设置在基板上。 第二电极在第一电极上交叉。 存储部设置在第一电极和第二电极之间。 与第一电极相对的存储部分的第一存储器部分表面的区域和与第二电极相对的存储器部分的第二存储器部分表面的区域中的至少一个小于第二电极的横截面的面积 第一电极和第二电极通过交叉相互相对。

公开(公告)号：US20090321272A1

公开(公告)日：2009-12-31

申请号：US12459161

申请日：2009-06-26

申请人： Masaaki Kato ,  Yusuke Ogawa ,  Hiroki Domon ,  Naoya Hayamizu ,  Makiko Tange ,  Yoshiaki Kurokawa ,  Nobuo Kobayashi

发明人： Masaaki Kato ,  Yusuke Ogawa ,  Hiroki Domon ,  Naoya Hayamizu ,  Makiko Tange ,  Yoshiaki Kurokawa ,  Nobuo Kobayashi

IPC分类号： C25B15/00

CPC分类号： C25B1/285

摘要： Sulfuric acid electrolysis process wherein; a temperature of electrolyte containing sulfuric acid to be supplied to an anode compartment and a cathode compartment is controlled to 30 degree Celsius or more; a flow rate F1 (L/min.) of the electrolyte containing sulfuric acid to be supplied to said anode compartment is controlled to 1.5 times or more (F1/Fa≧1.5) a flow rate Fa (L/min.) of gas formed on an anode side as calculated from Equation (1) shown below and a flow rate F2(L/min.) of said electrolyte containing sulfuric acid to be supplied to said cathode compartment is controlled to 1.5 times or more (F2/Fc≧1.5) a flow rate Fe (L/min.) of gas formed on a cathode side as calculated from Equation (2) shown below. Fa=(I×S×R×T)/(4×Faraday constant)   Equation (I) Fe=(I×S×R×T)/(2×Faraday constant)   Equation (2) I: Electrolytic current (A)S: Time: 60 second (Fixed)R: Gas constant (0.082 1·atm/K/mol)K: Absolute temperature (273.15 degree Celsius+T degree Celsius)T: Electrolysis temperature (degree Celsius)Faraday constant: (C/mol)

摘要翻译： 硫酸电解法其中; 供给阳极室和阴极室的含有硫酸的电解质的温度控制在30摄氏度以上; 将供给到阳极室的含有硫酸的电解质的流量F1（L / min）控制为气体的流量Fa（L / min）的1.5倍以上（F1 / Fa> 1.5） 形成在阳极侧，由下述式（1）算出，将含有供给阴极室的硫酸的电解质的流量F2（L / min）控制在1.5倍以上（F2 / Fc> = 1.5）由下面所示的等式（2）计算的在阴极侧形成的气体的流速Fe（L / min）。 Fa =（IxSxRxT）/（4xFaraday常数）等式（I）Fe =（IxSxRxT）/（2xFaraday常数）等式（2）I：电解电流（A）S：时间：60秒（固定）R：气体常数（0.082 1.atm / K / mol）K：绝对温度（273.15摄氏度+ T摄氏度）T：电解温度（摄氏度）法拉第常数：（C / mol）

公开(公告)号：US08211287B2

公开(公告)日：2012-07-03

申请号：US12459161

申请日：2009-06-26

申请人： Masaaki Kato ,  Yusuke Ogawa ,  Hiroki Domon ,  Naoya Hayamizu ,  Makiko Tange ,  Yoshiaki Kurokawa ,  Nobuo Kobayashi

发明人： Masaaki Kato ,  Yusuke Ogawa ,  Hiroki Domon ,  Naoya Hayamizu ,  Makiko Tange ,  Yoshiaki Kurokawa ,  Nobuo Kobayashi

IPC分类号： C25B1/28

CPC分类号： C25B1/285

摘要： Sulfuric acid electrolysis process wherein; a temperature of electrolyte containing sulfuric acid to be supplied to an anode compartment and a cathode compartment is controlled to 30 degree Celsius or more; a flow rate F1 (L/min.) of the electrolyte containing sulfuric acid to be supplied to said anode compartment is controlled to 1.5 times or more (F1/Fa≧1.5) a flow rate Fa (L/min.) of gas formed on an anode side as calculated from Equation (1) shown below and a flow rate F2(L/min.) of said electrolyte containing sulfuric acid to be supplied to said cathode compartment is controlled to 1.5 times or more (F2/Fc≧1.5) a flow rate Fe (L/min.) of gas formed on a cathode side as calculated from Equation (2) shown below. Fa=(I×S×R×T)/(4×Faraday constant)  Equation (1) Fe=(I×S×R×T)/(2×Faraday constant)  Equation (2) I: Electrolytic current (A) S: Time: 60 second (Fixed) R: Gas constant (0.082 1·atm/K/mol) K: Absolute temperature (273.15 degree Celsius+T degree Celsius) T: Electrolysis temperature (degree Celsius) Faraday constant: (C/mol)

摘要翻译： 硫酸电解法其中; 供给阳极室和阴极室的含有硫酸的电解质的温度控制在30摄氏度以上; 供给所述阳极室的含有硫酸的电解质的流量F1（L / min）被控制为形成的气体的流量Fa（L / min）的1.5倍以上（F1 /Fa≥1.5） 在阳极侧，由下述式（1）计算，含有供给阴极室的硫酸的电解质的流量F2（L / min）被控制为1.5倍以上（F2 /Fc≥1.5 ）由如下所示的等式（2）计算的在阴极侧形成的气体的流速Fe（L / min）。 Fa =（I×S×R×T）/（4×法拉第常数）等式（1）Fe =（I×S×R×T）/（2×法拉第常数）等式（2）I：电解电流 ）S：时间：60秒（固定）R：气体常数（0.082 1·atm / K / mol）K：绝对温度（273.15摄氏度+ T摄氏度）T：电解温度（摄氏度）法拉第常数 / mol）

公开(公告)号：US08137513B2

公开(公告)日：2012-03-20

申请号：US12459134

申请日：2009-06-26

申请人： Masaaki Kato ,  Yoshiyuki Seya ,  Naoya Hayamizu ,  Makiko Tange ,  Yoshiaki Kurokawa ,  Nobuo Kobayashi

发明人： Masaaki Kato ,  Yoshiyuki Seya ,  Naoya Hayamizu ,  Makiko Tange ,  Yoshiaki Kurokawa ,  Nobuo Kobayashi

IPC分类号： C25B9/08 ,  C25B11/12 ,  C25B1/28

CPC分类号： C25B1/285 ,  C25B9/00

摘要： In a sulfuric acid electrolytic cell to electrolyze sulfuric acid supplied to an anode compartment and a cathode compartment comprising a diaphragm, said anode compartment and said cathode compartment separated by said diaphragm, a cathode provided in said cathode compartment and a conductive diamond anode provided in said anode compartment, as said conductive diamond anode, a conductive diamond film is formed on the surface of said conductive substrate, the rear face of said conductive substrate is pasted, with conductive paste, on an current collector comprising a rigid body with size equal to, or larger than, said conductive substrate, an anode compartment frame constituting said anode compartment is contacted via gasket with the periphery on the side of the conductive diamond film of said diamond anode, said diaphragm is contacted with the front face of said anode compartment, further, with the front face of said diaphragm, the cathode compartment frame constituting said cathode compartment, a gasket, and said cathode are contacted in sequence, the rear face of said cathode is pasted with conductive paste to the current collector comprising a rigid body with size equal to, or larger than, said cathode and electric power is supplied from one current collector to the other current collector via said conductive paste.

摘要翻译： 在硫酸电解池中，电解供给阳极室的硫酸和包含隔膜的阴极室，由所述隔膜隔开的所述阳极室和所述阴极室分别设置在所述阴极室中的阴极和设在所述阴极室中的导电金刚石阳极 阳极室，作为所述导电金刚石阳极，在所述导电衬底的表面上形成导电金刚石膜，所述导电衬底的背面用导电膏粘贴在集电器上，该集电器包括尺寸等于或等于的刚体， 或大于所述导电基底，构成所述阳极室的阳极室框架通过垫圈与所述金刚石阳极的导电金刚石膜侧面的周边接触，所述隔膜与所述阳极室的前表面接触 与所述隔膜的前面相连，阴极隔室框架构成所述阴极co 间隔件，垫圈和所述阴极按顺序接触，所述阴极的背面用导电膏粘贴到集电器，该集电器包括尺寸等于或大于所述阴极的刚体，并且电力从一个 集电器经由所述导电浆料到另一个集电器。