Nonvolatile memory device and method for manufacturing the same
    1.
    发明授权
    Nonvolatile memory device and method for manufacturing the same 有权
    非易失性存储器件及其制造方法

    公开(公告)号:US08519371B2

    公开(公告)日:2013-08-27

    申请号:US12876870

    申请日:2010-09-07

    IPC分类号: H01L29/02

    摘要: According to one embodiment, a nonvolatile memory device includes a substrate, a first electrode, a second electrode, and a memory. The first electrode is provided on the substrate. The second electrode crosses on the first electrode. The memory portion is provided between the first electrode and the second electrode. At least one of an area of a first memory portion surface of the memory portion opposed to the first electrode and an area of a second memory portion surface of the memory portion opposed to the second electrode is smaller than an area of a cross surface of the first electrode and the second electrode opposed to each other by the crossing.

    摘要翻译: 根据一个实施例,非易失性存储器件包括衬底,第一电极,第二电极和存储器。 第一电极设置在基板上。 第二电极在第一电极上交叉。 存储部设置在第一电极和第二电极之间。 与第一电极相对的存储部分的第一存储器部分表面的区域和与第二电极相对的存储器部分的第二存储器部分表面的区域中的至少一个小于第二电极的横截面的面积 第一电极和第二电极通过交叉相互相对。

    NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
    4.
    发明申请
    NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    非易失性存储器件及其制造方法

    公开(公告)号:US20110037045A1

    公开(公告)日:2011-02-17

    申请号:US12876870

    申请日:2010-09-07

    IPC分类号: H01L45/00 H01L21/02

    摘要: According to one embodiment, a nonvolatile memory device includes a substrate, a first electrode, a second electrode, and a memory. The first electrode is provided on the substrate. The second electrode crosses on the first electrode. The memory portion is provided between the first electrode and the second electrode. At least one of an area of a first memory portion surface of the memory portion opposed to the first electrode and an area of a second memory portion surface of the memory portion opposed to the second electrode is smaller than an area of a cross surface of the first electrode and the second electrode opposed to each other by the crossing.

    摘要翻译: 根据一个实施例,非易失性存储器件包括衬底,第一电极,第二电极和存储器。 第一电极设置在基板上。 第二电极在第一电极上交叉。 存储部设置在第一电极和第二电极之间。 与第一电极相对的存储部分的第一存储器部分表面的区域和与第二电极相对的存储器部分的第二存储器部分表面的区域中的至少一个小于第二电极的横截面的面积 第一电极和第二电极通过交叉相互相对。

    Sulfuric acid electrolysis process
    5.
    发明申请
    Sulfuric acid electrolysis process 有权
    硫酸电解过程

    公开(公告)号:US20090321272A1

    公开(公告)日:2009-12-31

    申请号:US12459161

    申请日:2009-06-26

    IPC分类号: C25B15/00

    CPC分类号: C25B1/285

    摘要: Sulfuric acid electrolysis process wherein; a temperature of electrolyte containing sulfuric acid to be supplied to an anode compartment and a cathode compartment is controlled to 30 degree Celsius or more; a flow rate F1 (L/min.) of the electrolyte containing sulfuric acid to be supplied to said anode compartment is controlled to 1.5 times or more (F1/Fa≧1.5) a flow rate Fa (L/min.) of gas formed on an anode side as calculated from Equation (1) shown below and a flow rate F2(L/min.) of said electrolyte containing sulfuric acid to be supplied to said cathode compartment is controlled to 1.5 times or more (F2/Fc≧1.5) a flow rate Fe (L/min.) of gas formed on a cathode side as calculated from Equation (2) shown below. Fa=(I×S×R×T)/(4×Faraday constant)   Equation (I) Fe=(I×S×R×T)/(2×Faraday constant)   Equation (2) I: Electrolytic current (A)S: Time: 60 second (Fixed)R: Gas constant (0.082 1·atm/K/mol)K: Absolute temperature (273.15 degree Celsius+T degree Celsius)T: Electrolysis temperature (degree Celsius)Faraday constant: (C/mol)

    摘要翻译: 硫酸电解法其中; 供给阳极室和阴极室的含有硫酸的电解质的温度控制在30摄氏度以上; 将供给到阳极室的含有硫酸的电解质的流量F1(L / min)控制为气体的流量Fa(L / min)的1.5倍以上(F1 / Fa> 1.5) 形成在阳极侧,由下述式(1)算出,将含有供给阴极室的硫酸的电解质的流量F2(L / min)控制在1.5倍以上(F2 / Fc> = 1.5)由下面所示的等式(2)计算的在阴极侧形成的气体的流速Fe(L / min)。 Fa =(IxSxRxT)/(4xFaraday常数)等式(I)Fe =(IxSxRxT)/(2xFaraday常数)等式(2)I:电解电流(A)S:时间:60秒(固定)R:气体常数(0.082 1.atm / K / mol)K:绝对温度(273.15摄氏度+ T摄氏度)T:电解温度(摄氏度)法拉第常数:(C / mol)