摘要:
A collapsible snoot assembly for motion picture lighting fixture having a cylindrical body of a fabric material configured to expand and collapse along a longitudinal axis between expanded and collapsed positions having a biasing means for biasing the cylindrical body into an expanded position and a lighting fixture attachment means for securing the cylindrical body to a lighting fixture such that light projected from the lighting fixture is directed through the collapsible snoot assembly.
摘要:
The invention provides methods for embedding digital watermarks for authentication of printed objects, and corresponding methods for authenticating these objects. One aspect of the invention is a method of embedding a digital watermark in a digital image to be printed on an object. The method embeds an auxiliary signal in the digital image so that the auxiliary signal is substantially imperceptible, yet machine readable. It converts the image to a halftone image using a halftoning process. If copies are made of the printed image, the image characteristics change due a change in the halftoning process used to create the copies. These changes are detected to determine whether a suspect document is authentic.
摘要:
A sock system for PURPOSE includes a sock that may be worn and the sock has a cuff. A strap is coupled to the sock and the strap may be manipulated. The strap is positioned on the cuff. The strap is manipulated to select a tightness of the cuff on a user. Thus, the user may select an amount of pressure the cuff imparts to the user.
摘要:
Methods and systems for the prioritized erasure of data blocks in a flash storage device are provided. A data block in the flash storage device is selected for erasure based upon the number of valid data segments therein, thereby minimizing the number of data segments that are carried over to another data block before erasing the selected data block. The overhead of write operations in the flash storage device is therefore greatly reduced, and the overall performance thereof greatly increased. A method for managing memory operations in a flash storage device having a plurality of data blocks comprises the steps of selecting one of the plurality of data blocks for erasure based upon a number of valid data segments therein, and erasing the selected one of the plurality of data blocks.
摘要:
A method of treatment and/or prevention of cancer comprises administering agents which cause increased intracellular granularity in cancer cells, at least in an amount sufficient to inhibit proliferation of such cells and preferably in an amount sufficient to lead to cancer cell death. The method is particularly directed to refractory cancer, particularly hormone refractory prostate cancer. The agents identified cause increased intracellular granularity in the cancer cells, and also convert adherent cancer cells to non-adherent cancer cells, leading to cancer cell death. Using the present invention, cancer cells undergo increased intracellular granularity at relatively low agent concentrations, while also inhibiting cell proliferation. Increased concentrations lead to conversion of adherent cancer cells to non-adherent cancer cells, then to cell death. While the exact mechanism of cancer cell degradation and death is not completely understood, the treated cancer cells, including refractory prostate cancer cells, give indications of cell death through an autophagic mechanism. Pharmaceutical compositions related to the presently disclosed methods are also disclosed.
摘要:
A flash storage device comprises a plurality of data blocks, each data block comprising a plurality of data segments, a system memory, and a controller. The controller is configured to cache in the system memory a plurality of data sectors to be written, to write to a first one of the plurality of data segments a first one of the plurality of data sectors, to write to the first one of the plurality of data segments a first portion of a second one of the plurality of data sectors, and to write to a second one of the plurality of data segments a second portion of the second one of the plurality of data sectors.
摘要:
Methods and systems for the prioritized erasure of data blocks in a flash storage device are provided. A data block in the flash storage device is selected for erasure based upon the number of valid data segments therein, thereby minimizing the number of data segments that are carried over to another data block before erasing the selected data block. The overhead of write operations in the flash storage device is therefore greatly reduced, and the overall performance thereof greatly increased. A method for managing memory operations in a flash storage device having a plurality of data blocks comprises the steps of selecting one of the plurality of data blocks for erasure based upon a number of valid data segments therein, and erasing the selected one of the plurality of data blocks.
摘要:
A method of treatment and/or prevention of cancer comprises administering agents which cause increased intracellular granularity in cancer cells, at least in an amount sufficient to inhibit proliferation of such cells and preferably in an amount sufficient to lead to cancer cell death. The method is particularly directed to refractory cancer, particularly hormone refractory prostate cancer. The agents identified cause increased intracellular granularity in the cancer cells, and also convert adherent cancer cells to non-adherent cancer cells, leading to cancer cell death. Using the present invention, cancer cells undergo increased intracellular granularity at relatively low agent concentrations, while also inhibiting cell proliferation. Increased concentrations lead to conversion of adherent cancer cells to non-adherent cancer cells, then to cell death. While the exact mechanism of cancer cell degradation and death is not completely understood, the treated cancer cells, including refractory prostate cancer cells, give indications of cell death through an autophagic mechanism. Pharmaceutical compositions related to the presently disclosed methods are also disclosed.
摘要:
A sidewall passivation layer is deposited on an etched feature in a semiconductor substrate with a hydrocarbon deposition gas by introducing H2, determining certain mixture percentages for the hydrocarbon gas/H2 mix at which the etch rate for the substrate peaks, the etch rate begins to rise from a generally steady state, and/or the etch rate falls to zero, and then maintaining the mixture percentage within a selected range. Where the hydrocarbon gas/H2 mix is maintained at a percentage between the steady-state etch rate percentage and the peak etch rate percentage, then relatively high ion energies are used. Where the hydrocarbon gas/H2 mix is maintained at a percentage between the peak etch rate percentage and the percentage where the etch rate falls to zero, then relatively low ion energies are used. High aspect-ratio features in a semiconductor substrate can be produced by performing alternating etching and depositing a passivation layer on the substrate, where the deposition is performed according to the above-described deposition process.
摘要翻译:侧壁钝化层通过引入H2而沉积在具有烃沉积气体的半导体衬底的蚀刻特征上,确定烃基气体/ H2混合物的某些混合百分比,其中衬底的蚀刻速率达峰值,蚀刻速率开始上升 和/或蚀刻速率降至零,然后将混合物百分比保持在所选择的范围内。 当烃气/ H2混合物保持在稳态蚀刻速率百分比和峰蚀刻速率百分比之间的百分比时,则使用相对较高的离子能量。 当烃气体/ H 2混合物保持在峰值蚀刻速率百分比与蚀刻速率降至零的百分比之间的百分比时,则使用相对低的离子能量。 半导体衬底中的高纵横比特征可以通过在衬底上执行交替蚀刻和沉积钝化层来制造,其中根据上述沉积工艺执行沉积。