公开(公告)号：US20110073887A1

公开(公告)日：2011-03-31

申请号：US12566769

申请日：2009-09-25

申请人： MARK W. WANLASS ,  Angelo Mascarenhas

发明人： MARK W. WANLASS ,  Angelo Mascarenhas

IPC分类号： H01L33/00 ,  H01L29/20

CPC分类号： H01L33/30 ,  H01L31/0304 ,  H01L31/03046 ,  H01L31/03529 ,  Y02E10/544

摘要： Optoelectronic devices, junctions and methods of fabricating a device or junction where the emitter layer is of an indirect-band-gap material and the base layer is of a direct-band-gap material. The device or junction may have, among other structures and layers, a base layer of a first semiconductor material having a first conductivity type and further having a direct band gap and an emitter layer forming a junction with the base layer. In this embodiment, the emitter layer may be of a second semiconductor material having a second conductivity type and further having an indirect band gap. The optoelectronic device may have the semiconductor material of the emitter layer substantially lattice mismatched with the semiconductor material of the base layer in bulk form. Alternatively, the emitter layer may be substantially lattice matched with the base layer.

摘要翻译： 光电子器件，结和制造器件或结的方法，其中发射极层是间接带隙材料，而基极层是直接带隙材料。 除了其它结构和层之外，器件或结可以具有具有第一导电类型并且还具有直接带隙的第一半导体材料的基底层和与基底层形成结的发射极层。 在该实施例中，发射极层可以是具有第二导电类型并且还具有间接带隙的第二半导体材料。 光电子器件可以使发射极层的半导体材料与基底层的半导体材料基本上晶格错配，这是散装形式。 或者，发射极层可以与基极层基本上晶格匹配。

公开(公告)号：US06239354B1

公开(公告)日：2001-05-29

申请号：US09416016

申请日：1999-10-08

申请人： Mark W. Wanlass

发明人： Mark W. Wanlass

IPC分类号： H01L3106

CPC分类号： H01L31/0735 ,  H01L27/142 ,  Y02E10/544

摘要： A monolithically interconnected photovoltaic module having cells which are electrically connected which comprises a substrate, a plurality of cells formed over the substrate, each cell including a primary absorber layer having a light receiving surface and a p-region, formed with a p-type dopant, and an n-region formed with an n-type dopant adjacent the p-region to form a single pn-junction, and a cell isolation diode layer having a p-region, formed with a p-type dopant, and an n-region formed with an n-type dopant adjacent the p-region to form a single pn-junction, the diode layer intervening the substrate and the absorber layer wherein the absorber and diode interfacial regions of a same conductivity type orientation, the diode layer having a reverse-breakdown voltage sufficient to prevent inter-cell shunting, and each cell electrically isolated from adjacent cells with a vertical trench trough the pn-junction of the diode layer, interconnects disposed in the trenches contacting the absorber regions of adjacent cells which are doped an opposite conductivity type, and electrical contacts.

摘要翻译： 一种单片互连光伏模块，其具有电连接的单元，其包括基板，形成在所述基板上的多个单元，每个单元包括具有受光面和p区的初级吸收层，所述初级吸收层形成有p型掺杂剂 以及与p型区域相邻形成n型掺杂剂形成单个pn结的n区，以及具有由p型掺杂剂形成的p区的单元隔离二极管层， 区域，其形成有邻近p区的n型掺杂剂以形成单个pn结，所述二极管层插入所述衬底和所述吸收层，其中所述吸收体和二极管界面区域具有相同的导电类型取向，所述二极管层具有 反向击穿电压足以防止电池间分流，并且每个电池与相邻电池电隔离，并具有通过二极管层的pn结的垂直沟槽，布置在沟槽中的互连件接触 具有相反导电类型的相邻电池的吸收区和电接触。

公开(公告)号：US08691663B2

公开(公告)日：2014-04-08

申请号：US12613863

申请日：2009-11-06

申请人： Mark W. Wanlass

发明人： Mark W. Wanlass

IPC分类号： H01L21/30 ,  H01L31/18 ,  H01L31/0352 ,  H01L21/02

CPC分类号： H01L21/02035 ,  H01L21/6835 ,  H01L31/0352 ,  H01L31/1892 ,  H01L2221/6835 ,  H01L2221/68363 ,  H01L2221/68368 ,  Y02E10/50

摘要： A method of processing an epistructure or processing a semiconductor device including associating a conformal and flexible handle with the epistructure and removing the epistructure and handle as a unit from the parent substrate. The method further includes causing the epistructure and handle unit to conform to a shape that differs from the shape the epistructure otherwise inherently assumes upon removal from the parent substrate. A device prepared according to the disclosed methods.

摘要翻译： 一种处理结构或处理半导体器件的方法，包括将保形和灵活手柄与外形结构相关联，并从母基片上去除结构并作为单元处理。 该方法还包括使得结构和手柄单元符合与从母基板去除时本体结构不同的形状不同的形状。 根据所公开的方法制备的装置。

公开(公告)号：US20120015469A1

公开(公告)日：2012-01-19

申请号：US13241732

申请日：2011-09-23

申请人： Mark W. Wanlass

发明人： Mark W. Wanlass

IPC分类号： H01L31/18

CPC分类号： H01L31/06875 ,  H01L31/043 ,  H01L31/0475 ,  H01L31/0687 ,  Y02E10/544

摘要： A monolithic, multi-bandgap, tandem solar photovoltaic converter has at least one, and preferably at least two, subcells grown lattice-matched on a substrate with a bandgap in medium to high energy portions of the solar spectrum and at least one subcell grown lattice-mismatched to the substrate with a bandgap in the low energy portion of the solar spectrum, for example, about 1 eV.

摘要翻译： 单片多带隙串联太阳能光伏转换器具有至少一个，优选至少两个子电池，其在衬底上具有在太阳光谱的中等至高能部分中的带隙和至少一个子电池生长格子 在太阳光谱的低能量部分中具有带隙的衬底，例如约1eV。

公开(公告)号：US5376185A

公开(公告)日：1994-12-27

申请号：US61635

申请日：1993-05-12

申请人： Mark W. Wanlass

发明人： Mark W. Wanlass

IPC分类号： H01L31/0216 ,  H01L31/0304 ,  H01L31/0693 ,  H01L31/06

CPC分类号： H01L31/0693 ,  H01L31/02168 ,  H01L31/03046 ,  Y02E10/544

摘要： A single-junction solar cell having the ideal band gap for terrestrial concentrator applications. Computer modeling studies of single-junction solar cells have shown that the presence of absorption bands in the direct spectrum has the effect of "pinning" the optimum band gap for a wide range of operating conditions at a value of 1.14.+-.0.02 eV. Efficiencies exceeding 30% may be possible at high concentration ratios for devices with the ideal band gap.

摘要翻译： 具有用于地面集中器应用的理想带隙的单结太阳能电池。 单结太阳能电池的计算机模拟研究表明，直接光谱中吸收带的存在具有在宽范围的工作条件下以1.14 +/- 0.02eV的值“钉住”最佳带隙的效果。 在具有理想带隙的器件的高浓度比下，效率可能超过30％。

公开(公告)号：US4963949A

公开(公告)日：1990-10-16

申请号：US251484

申请日：1988-09-30

申请人： Mark W. Wanlass ,  Peter Sheldon

发明人： Mark W. Wanlass ,  Peter Sheldon

IPC分类号： H01L21/20 ,  H01L29/205 ,  H01L29/267

CPC分类号： H01L29/267 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/02543 ,  H01L29/205 ,  Y10S438/936

摘要： A substrate structure for an InP-based semiconductor device having an InP based film is disclosed. The substrate structure includes a substrate region having a lightweight bulk substrate and an upper GaAs layer. An interconnecting region is disposed between the substrate region and the InP-based device. The interconnecting region includes a compositionally graded intermediate layer substantially lattice-matched at one end to the GaAs layer and substantially lattice-matched at the opposite end to the InP-based film. The interconnecting region further includes a dislocation mechanism disposed between the GaAs layer and the InP-based film in cooperation with the graded intermediate layer, the buffer mechanism blocking and inhibiting propagation of threading dislocations between the substrate region, and the InP-based device.

摘要翻译： 公开了一种具有InP基膜的InP基半导体器件的衬底结构。 衬底结构包括具有轻量体积衬底和上GaAs层的衬底区域。 互连区域设置在基板区域和基于InP的器件之间。 互连区域包括在一端基本上与GaAs层晶格匹配的组成分级的中间层，并且在与InP基膜相反的端部基本上晶格匹配。 互连区域还包括位移机构，其与渐变中间层协调配置在GaAs层和InP基膜之间，缓冲机构阻挡并抑制衬底区域和基于InP的器件之间的穿透位错的传播。

公开(公告)号：US4935384A

公开(公告)日：1990-06-19

申请号：US284222

申请日：1988-12-14

申请人： Mark W. Wanlass

发明人： Mark W. Wanlass

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L31/0216

CPC分类号： H01L31/02167 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/02546 ,  Y02E10/50 ,  Y10S148/015 ,  Y10S148/065 ,  Y10S148/097 ,  Y10S438/902

摘要： A method of passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

摘要翻译： 一种钝化III-V族或II-VI族半导体化合物表面的方法。 该方法包括选择具有与半导体化合物的晶格常数基本上不匹配的晶格常数的钝化材料。 然后将钝化材料作为钝化材料的超薄层在III-V族或II-VI族半导体化合物的表面上生长。 钝化材料生长至足以维持超薄钝化材料和半导体化合物之间的相干界面的厚度。 此外，还公开了由这种方法形成的装置。

公开(公告)号：US08173891B2

公开(公告)日：2012-05-08

申请号：US12121463

申请日：2008-05-15

申请人： Mark W. Wanlass ,  Angelo Mascarenhas

发明人： Mark W. Wanlass ,  Angelo Mascarenhas

IPC分类号： H01L31/00 ,  H01L31/042 ,  H01L21/302

CPC分类号： H01L31/1852 ,  H01L31/0725 ,  H01L31/0735 ,  Y02E10/544 ,  Y02P70/521

摘要： Modeling a monolithic, multi-bandgap, tandem, solar photovoltaic converter or thermophotovoltaic converter by constraining the bandgap value for the bottom subcell to no less than a particular value produces an optimum combination of subcell bandgaps that provide theoretical energy conversion efficiencies nearly as good as unconstrained maximum theoretical conversion efficiency models, but which are more conducive to actual fabrication to achieve such conversion efficiencies than unconstrained model optimum bandgap combinations. Achieving such constrained or unconstrained optimum bandgap combinations includes growth of a graded layer transition from larger lattice constant on the parent substrate to a smaller lattice constant to accommodate higher bandgap upper subcells and at least one graded layer that transitions back to a larger lattice constant to accommodate lower bandgap lower subcells and to counter-strain the epistructure to mitigate epistructure bowing.

摘要翻译： 通过将底部子电池的带隙值约束到不小于特定值来建模单片，多带隙，串联，太阳能光伏转换器或热光伏转换器可以产生最佳组合的子电池带隙，从而提供理论能量转换效率几乎与无约束 最大理论转换效率模型，但是比无约束模型最佳带隙组合更有利于实际制造以实现这种转换效率。 实现这种约束或无约束的最佳带隙组合包括从母基板上的较大晶格常数到较小晶格常数的渐变层跃迁的生长，以适应较高带隙上部子电池和至少一个渐变层，其转变回较大的晶格常数以适应 较低的带隙较低的子电池并且使得结构发生逆应以减轻结构弯曲。

公开(公告)号：US07095050B2

公开(公告)日：2006-08-22

申请号：US10275123

申请日：2002-02-28

申请人： Mark W. Wanlass ,  Angelo Mascarenhas

发明人： Mark W. Wanlass ,  Angelo Mascarenhas

IPC分类号： H01L33/00

CPC分类号： H01L31/0687 ,  H01L27/153 ,  H01L31/042 ,  H01L31/0475 ,  H01L31/0504 ,  H01L31/0508 ,  H01L33/08 ,  Y02E10/544

摘要： Monolithic, tandem, photonic cells include at least a first semiconductor layer and a second semiconductor layer, wherein each semiconductor layer includes an n-type region, a p-type region, and a given band-gap energy. Formed within each semiconductor layer is a sting of electrically connected photonic sub-cells. By carefully selecting the numbers of photonic sub-cells in the first and second layer photonic sub-cell string(s), and by carefully selecting the manner in which the sub-cells in a first and second layer photonic sub-cell string(s) are electrically connected, each of the first and second layer sub-cell strings may be made to achieve one or more substantially identical electrical characteristics.

公开(公告)号：US08772628B2

公开(公告)日：2014-07-08

申请号：US12992871

申请日：2009-01-29

申请人： Mark W. Wanlass ,  Jeffrey J. Carapella ,  Myles A. Steiner

发明人： Mark W. Wanlass ,  Jeffrey J. Carapella ,  Myles A. Steiner

IPC分类号： H01L31/00 ,  H01L21/00 ,  H01L31/0687

CPC分类号： H01L31/065 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/032 ,  H01L31/068 ,  H01L31/06875 ,  H01L31/0693 ,  H01L31/1844 ,  H01L31/1892 ,  Y02E10/544

摘要： High performance, high bandgap, lattice-mismatched, photovoltaic cells (10), both transparent and non-transparent to sub-bandgap light, are provided as devices for use alone or in combination with other cells in split spectrum apparatus or other applications.

摘要翻译： 提供对子带隙光透明和不透明的高性能，高带隙，晶格不匹配的光伏电池（10）作为单独使用或与分光谱装置或其他应用中的其它单元组合使用的装置。