Pattern inspection apparatus and electron beam apparatus
    1.
    发明授权
    Pattern inspection apparatus and electron beam apparatus 失效
    图案检查装置和电子束装置

    公开(公告)号:US5557105A

    公开(公告)日:1996-09-17

    申请号:US320377

    申请日:1994-10-11

    摘要: A pattern inspection apparatus is designed to quickly and accurately perform an inspection of an inspection sample, such as a mask or a wafer or the like by irradiating electron beams onto the inspection sample and detecting secondary or backscattered electrons reflected from the surface of the inspection sample and/or transmitted electrons passing through the inspection sample. The pattern inspection apparatus includes an electron beam generator including at least one electron gun for generating at least one electron beam irradiating onto the surface of the inspection sample. A movable support is provided for supporting the inspection sample. The apparatus also includes a detector unit having a plurality of electron detecting elements for detecting electrons containing information related to the construction of the inspection sample and a detection signal processor for processing simultaneously or in parallel formation the outputs of the electron detecting elements of the detector. Also, when a plurality of electron beams are used for simultaneous irradiation of the inspection sample, the pattern inspection apparatus includes a mechanism for avoiding interference between the reflected electrons of the adjacent electron beams.

    摘要翻译: 图案检查装置被设计为通过将电子束照射到检查样品上并检测从检查样品的表面反射的次级或反向散射电子来快速且准确地执行诸如掩模或晶片等的检查样本的检查 和/或穿过检查样品的透射电子。 图案检查装置包括电子束发生器,其包括至少一个电子枪,用于产生照射到检查样品表面上的至少一个电子束。 提供用于支撑检查样品的可移动支撑件。 该装置还包括具有多个电子检测元件的检测器单元,用于检测包含与检查样本的结构有关的信息的电子;以及检测信号处理器,用于同时或并行地形成检测器的电子检测元件的输出。 此外,当使用多个电子束同时照射检查样本时,图案检查装置包括用于避免相邻电子束的反射电子之间的干涉的机构。

    Mark position detecting method and device for aligner and aligner having
the device
    2.
    发明授权
    Mark position detecting method and device for aligner and aligner having the device 失效
    具有该装置的对准器和对准器的标记位置检测方法和装置

    公开(公告)号:US5400145A

    公开(公告)日:1995-03-21

    申请号:US32237

    申请日:1993-03-17

    IPC分类号: G01B11/00 G03F9/00 G01B11/27

    CPC分类号: G03F9/7088

    摘要: Regarding a reflected light from any line portion, which is parallel to the longitudinal direction of the alignment mark 11, on the alignment mark 11, the cylindrical lens 33 functions merely as a glass plate, while the cylindrical lens 34 converges the light onto a pixel on the line sensor 35a, performing optical integration and simplifying image processing. Regarding a reflected light from any line portion, which is parallel to the lateral direction of the alignment mark 11, on the alignment mark 11, the cylindrical lens 34 functions merely as a glass plate, while the cylindrical lens 33 magnifies and forms a line image on the line sensor 35a along the pixel row of that. A toroidal lens can be used in place of the cylindrical lenses 33 and 34.

    摘要翻译: 对于来自对准标记11的平行于纵向方向的任何线部分的反射光,在对准标记11上,柱面透镜33仅用作玻璃板,而柱面透镜34将光会聚到像素 在线传感器35a上进行光学整合并简化图像处理。 对于来自与对准标记11的横向平行的任何线部分的反射光,在对准标记11上,柱面透镜34仅用作玻璃板,而柱面透镜33放大并形成线图像 沿着该传感器35a的像素行。 可以使用环形透镜代替柱面透镜33和34。

    Method of manufacturing membrane mask, method of manufacturing semiconductor device, and membrane mask
    3.
    发明申请
    Method of manufacturing membrane mask, method of manufacturing semiconductor device, and membrane mask 审中-公开
    膜掩模的制造方法,半导体装置的制造方法以及膜掩模

    公开(公告)号:US20060019175A1

    公开(公告)日:2006-01-26

    申请号:US11055633

    申请日:2005-02-11

    IPC分类号: G03C5/00 G21K5/00 G03F1/00

    CPC分类号: G03F1/20

    摘要: A method of manufacturing a membrane mask for use in an electron beam exposure apparatus that exposes resist material, comprises manufacturing the membrane mask. A membrane thickness is determined so that an operation time that the electron beam exposure apparatus spends in exposing the resist material to form a predetermined pattern using the membrane mask is comparable to or less than an operation time that the electron beam exposure apparatus spends in exposing the resist material to form the predetermined pattern using complementary masks.

    摘要翻译: 一种制造用于暴露抗蚀剂材料的电子束曝光设备中的膜掩模的制造方法包括制造膜掩模。 确定膜厚度,使得电子束曝光装置在使用膜掩模曝光抗蚀剂材料以形成预定图案时花费的操作时间与电子束曝光装置在曝光时所花费的操作时间相当或小于 使用互补掩模形成预定图案的抗蚀剂材料。

    Rotary anode assembly for an X-ray source
    4.
    发明授权
    Rotary anode assembly for an X-ray source 失效
    用于X射线源的旋转阳极组件

    公开(公告)号:US4719645A

    公开(公告)日:1988-01-12

    申请号:US895234

    申请日:1986-08-11

    IPC分类号: H01J35/10

    CPC分类号: H01J35/10 H01J2235/1266

    摘要: A rotary anode assembly for an X-ray source, having a annular V-groove target portion for generating a desired characteristic X-ray emission by an electron beam bombardment applied thereto, wherein the V-grooved target portion is formed from a pair of target members each being formed into a body of rotation with respect to the axis of rotation of the assembly and having a surface including therein a coaxially-formed annular tapered portion. The target members are combined together so that the annular tapered surface portions face to each other with a predetermined angle therebetween, thereby constituting the annular V-groove. The annular V-groove target portion is formed in the peripheral surface of the rotary anode assembly or in the side surface of the anode assembly, which is perpendicular to the axis of rotation. The V-groove target portion is cooled by fluid coolant circulated through the inner space between the target member and the corresponding associated supporting member having a plurality of channels provided for allowing the fluid coolant to be supplied to the space.

    摘要翻译: 一种用于X射线源的旋转阳极组件,具有用于通过施加到其上的电子束轰击产生期望的特征X射线发射的环形V形槽目标部分,其中所述V形槽的目标部分由一对靶 每个构件相对于组件的旋转轴线形成为旋转体,并且具有包括同轴形成的环形锥形部分的表面。 目标构件组合在一起,使得环形锥形表面部分之间以预定角度彼此面对,从而构成环形V形槽。 环形V形槽的目标部分形成在旋转阳极组件的外周表面或阳极组件的垂直于旋转轴线的侧表面中。 V型槽目标部分被流体冷却剂冷却,该液体冷却剂通过目标构件和相应的相应的支撑构件之间的内部空间循环,所述内部空间具有多个通道,该多个通道用于允许流体冷却剂被供应到空间。

    Pattern inspection apparatus and electron beam apparatus
    5.
    发明授权
    Pattern inspection apparatus and electron beam apparatus 失效
    图案检查装置和电子束装置

    公开(公告)号:US5384463A

    公开(公告)日:1995-01-24

    申请号:US238349

    申请日:1994-05-05

    摘要: A pattern inspection apparatus is designed to quickly and accurately perform an inspection of an inspection sample, such as a mask or a wafer or the like by irradiating electron beams onto the inspection sample and detecting secondary or backscattered electrons reflected from the surface of the inspection sample and/or transmitted electrons passing through the inspection sample. The pattern inspection apparatus includes an electron beam generator including at least one electron gun for generating at least one electron beam irradiating onto the surface of the inspection sample. A movable support is provided for supporting the inspection sample. The apparatus also includes a detector unit having a plurality of electron detecting elements for detecting electrons containing information related to the construction of the inspection sample and a detection signal processor for processing simultaneously or in parallel formation the outputs of the electron detecting elements of the detector. Also, when a plurality of electron beams are used for simultaneous irradiation of the inspection sample, the pattern inspection apparatus is provided with a mechanism for avoiding interference between the reflected electrons of the adjacent electron beams.

    摘要翻译: 图案检查装置被设计为通过将电子束照射到检查样品上并检测从检查样品的表面反射的次级或反向散射电子来快速且准确地执行诸如掩模或晶片等的检查样本的检查 和/或穿过检查样品的透射电子。 图案检查装置包括电子束发生器,其包括至少一个电子枪,用于产生照射到检查样品表面上的至少一个电子束。 提供用于支撑检查样品的可移动支撑件。 该装置还包括具有多个电子检测元件的检测器单元,用于检测包含与检查样本的结构有关的信息的电子;以及检测信号处理器,用于同时或并行地形成检测器的电子检测元件的输出。 此外,当使用多个电子束同时照射检查样本时,图案检查装置设置有用于避免相邻电子束的反射电子之间的干涉的机构。

    Pattern inspection apparatus and electron beam apparatus
    6.
    发明授权
    Pattern inspection apparatus and electron beam apparatus 失效
    图案检查装置和电子束装置

    公开(公告)号:US5430292A

    公开(公告)日:1995-07-04

    申请号:US134860

    申请日:1993-10-12

    摘要: A pattern inspection apparatus is designed to quickly and accurately perform an inspection of an inspecting sample, such as masks, wafers or so forth by irradiating electron beams onto the inspection sample and detecting a secondary electron or a backscattered electron reflected from the surface of the inspecting sample or a transmission electron passing through the inspection sample. The pattern inspection apparatus includes an electron beam generating means including at least one electron gun for generating at least one electron beam irradiating on the surface of the inspecting sample, a movable means for supporting the inspecting sample, a detecting means including a plurality of electron detecting elements for detecting electrons containing information related to the construction of the inspection sample and a detection signal processing means for processing simultaneously or in parallel formation the outputs of the electron detecting elements of the detecting means. Also, when a plurality of electron beams are used for simultaneous irradiation of the inspecting sample, the pattern inspection apparatus is provided a mechanism for avoiding interference of a reflected beam of the adjacent electron beam.

    摘要翻译: 图案检查装置被设计为通过将电子束照射到检查样品上并检测从检查表面反射的二次电子或反向散射电子,来快速且准确地对检查样品进行检查,例如掩模,晶片等。 样品或通过检查样品的透射电子。 图案检查装置包括:电子束产生装置,包括至少一个电子枪,用于产生照射在检查样品的表面上的至少一个电子束;支撑检查样品的可移动装置;检测装置,包括多个电子检测 用于检测包含与检查样品的构造相关的信息的电子的元件和用于同时或并行地形成检测装置的电子检测元件的输出的检测信号处理装置。 此外,当使用多个电子束同时照射检查样本时,图案检查装置被提供用于避免相邻电子束的反射光束的干涉的机构。