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26 条记录 (耗时 0.017 秒)

    Vacuum activated backside contact
    2.
    发明授权
    Vacuum activated backside contact 失效
    真空激活背面接触

    公开(公告)号：US06091257A

    公开(公告)日：2000-07-18

    申请号：US32496

    申请日：1998-02-26

    申请人： Roger L. Verkuil ,  Meindert J. Kleefstra

    发明人： Roger L. Verkuil ,  Meindert J. Kleefstra

    IPC分类号： G01R31/28 ,  G01R31/26

    CPC分类号： G01R31/2886

    摘要： An apparatus for making and verifying electrical contact with the backside of a semiconductor wafer having a bulk portion covered with an insulating layer of oxide includes a contact probe, a wafer chuck having at least one probe vacuum groove and a probe aperture and a probe cylinder having a low pressure and a high pressure portion. The low pressure portion communicates with the probe vacuum groove and the probe aperture. The apparatus further includes a piston movably located between the low pressure and high pressure portions. The contact probe is attached to the piston and adapted to be protrudable from the probe aperture. The groove, aperture and low pressure portion are adapted to form a low pressure chamber with the wafer. The probe is urgeable to pierce the oxide and make electrical contact with the bulk portion of the wafer. The apparatus further includes a time-varying voltage source connectable between the chuck and the probe, and a current measuring device for measuring a current between the chuck and the probe. The probe is in electrical contact with the wafer if the current corresponds at least to a capacitive coupling between the chuck and the wafer.

    摘要翻译： 用于制造和验证与半导体晶片的背面的电接触的装置，其具有覆盖有氧化物绝缘层的主体部分，包括接触探针，具有至少一个探针真空槽和探针孔的晶片卡盘和具有探针圆筒的探针圆筒， 低压和高压部分。 低压部分与探针真空槽和探针孔连通。 该装置还包括可移动地位于低压部分和高压部分之间的活塞。 接触探针连接到活塞并适于从探针孔突出。 槽，孔和低压部适于与晶片形成低压室。 该探针可以刺穿氧化物并与晶片的本体部分电接触。 该装置还包括可连接在卡盘和探针之间的时变电压源，以及用于测量卡盘和探针之间的电流的电流测量装置。 如果电流至少对应于卡盘和晶片之间的电容耦合，则探针与晶片电接触。

    Contactless total charge measurement with corona
    3.
    发明授权
    Contactless total charge measurement with corona 有权
    非接触式电荷测量

    公开(公告)号：US06448804B2

    公开(公告)日：2002-09-10

    申请号：US09964944

    申请日：2001-09-27

    申请人： Tom G. Miller ,  Roger L. Verkuil ,  Gregory S. Horner

    发明人： Tom G. Miller ,  Roger L. Verkuil ,  Gregory S. Horner

    IPC分类号： G01R3126

    CPC分类号： G01R29/24 ,  G01R31/2656 ,  G01R31/2831

    摘要： A method of measuring total charge of an insulating layer on a semiconductor substrate includes applying corona charges to the insulating layer, and measuring a surface photovoltage of the insulating layer after applying each of the corona charges. The charge density of each of the corona charges is measured with a coulombmeter. A total corona charge required to obtain a surface photovoltage of a predetermined fixed value is determined and used to calculate the total charge of the insulating layer. The fixed value corresponds to either a flatband or midband condition.

    摘要翻译： 测量半导体衬底上的绝缘层的总电荷的方法包括对绝缘层施加电晕电荷，以及在施加每个电晕电荷之后测量绝缘层的表面光电压。 用库仑计测量每个电晕电荷的电荷密度。 确定获得预定固定值的表面光电压所需的总电晕电荷，并用于计算绝缘层的总电荷。 固定值对应于平带或中频带条件。

    Apparatus and method for depositing charge on a semiconductor wafer
    5.
    发明授权
    Apparatus and method for depositing charge on a semiconductor wafer 失效
    用于在半导体晶片上沉积电荷的装置和方法

    公开(公告)号：US5594247A

    公开(公告)日：1997-01-14

    申请号：US499326

    申请日：1995-07-07

    申请人： Roger L. Verkuil ,  Gregory S. Horner ,  Thomas G. Miller

    发明人： Roger L. Verkuil ,  Gregory S. Horner ,  Thomas G. Miller

    IPC分类号： H01L21/66 ,  H01T19/04

    CPC分类号： H01L22/14 ,  H01L22/20

    摘要： A conductive screen is placed between a corona gun and the surface of a semiconductor wafer. The charge deposited on the wafer by the gun is controlled by a potential applied to the screen. A chuck orients the wafer in close proximity to the screen. A desired charge is applied to the wafer by first applying a surplus of one charge to the wafer and then depositing an opposite polarity charge until the potential of the wafer equals the potential of the screen.

    摘要翻译： 将导电屏放置在电晕枪和半导体晶片的表面之间。 通过枪施加在晶片上的电荷由施加到屏幕的电位来控制。 卡盘将晶片定位在靠近屏幕的位置。 通过首先向晶片施加剩余的一次电荷，然后沉积相反极性的电荷，直到晶片的电位等于屏幕的电位，将期望的电荷施加到晶片。

    Contactless corona-oxide-semiconductor Q-V mobile charge measurement method and apparatus
    6.
    发明授权
    Contactless corona-oxide-semiconductor Q-V mobile charge measurement method and apparatus 失效
    非接触式电晕氧化物半导体Q-V移动电荷测量方法和装置

    公开(公告)号：US5498974A

    公开(公告)日：1996-03-12

    申请号：US366861

    申请日：1994-12-30

    申请人： Roger L. Verkuil ,  Min-Su Fung

    发明人： Roger L. Verkuil ,  Min-Su Fung

    IPC分类号： H01L21/66 ,  G01R31/26 ,  G01R31/265 ,  G01R31/28

    CPC分类号： G01R31/2648 ,  G01R31/265

    摘要： A method and apparatus comprises heating a wafer to a temperature sufficient to temperature stress the wafer and enable ion motion. The wafer is then initialized in a measurement region with a non-contact corona discharge of a first polarity until a first dielectric field is developed, wherein any mobile ions present in the dielectric layer or at an air/dielectric interface move to a substrate/dielectric interface. A non-contact pulsed corona discharge of a second polarity, opposite the first polarity, is then applied to the wafer until a second dielectric field is developed and an amount of corona discharge Q.sub.MEASURED necessary to change the dielectric field from the first dielectric field to the second dielectric field is measured, wherein any mobile ions present at the dielectric/substrate interface move to the air/dielectric interface. An ideal amount of corona discharge Q.sub.IDEAL, in the absence of any highly mobile ionic species, necessary to change the dielectric field voltage of a dielectric layer of known thickness from a third dielectric field to a fourth dielectric field is then established. Lastly, measured corona discharge Q.sub.MEASURED is compared to ideal corona discharge Q.sub.IDEAL, wherein a quantitative difference between Q.sub. MEASURED and Q.sub.IDEAL is indicative of the amount of mobile charge Q.sub.MOBILE, Q.sub.MOBILE being representative of the amount of mobile ionic species in the dielectric layer.

    摘要翻译： 一种方法和装置包括将晶片加热至足以使晶片温度受到应力的温度并使离子运动。 然后将晶片在具有第一极性的非接触电晕放电的测量区域中初始化，直到第一介电场显现，其中存在于电介质层中或空气/介质界面处的任何移动离子移动到衬底/电介质 接口。 然后将与第一极性相反的第二极性的非接触脉冲电晕放电施加到晶片，直到形成第二介电场，并且需要将电介质场从第一介质场改变到第一电介质场所需的电晕放电量QMEASURED 测量第二电介质场，其中存在于电介质/衬底界面处的任何移动离子移动到空气/电介质界面。 然后建立了在没有任何高度移动的离子物质的情况下，将已知厚度的电介质层的电介质场电压从第三介电场改变到第四电介质场所需的理想量的电晕放电QIDEAL。 最后，将测量的电晕放电QMEASURED与理想的电晕放电QIDEAL进行比较，其中Q MEASURED和QIDEAL之间的定量差异表示移动电荷量QMOBILE，QMOBILE代表电介质层中的移动离子物质的量的量。