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    Electrical continuity tester
    2.
    发明授权
    Electrical continuity tester 有权
    电气连续性测试仪

    公开(公告)号：US07633298B1

    公开(公告)日：2009-12-15

    申请号：US11829985

    申请日：2007-07-30

    申请人： Meng-Chiao Kan ,  Meng-Feng Tsai ,  Congjun Gou ,  Quingjun Li ,  Lihua Zhang

    发明人： Meng-Chiao Kan ,  Meng-Feng Tsai ,  Congjun Gou ,  Quingjun Li ,  Lihua Zhang

    IPC分类号： G01R31/02

    CPC分类号： G01R31/026 ,  G01R1/04 ,  H01R24/58 ,  H01R2103/00

    摘要： A continuity tester for a lamp, coaxial, plug connector has a receptacle connector with first and second coaxial, annular receptacle contacts at a same axial spacing apart as power and ground contacts of the lamp connector for electrical engagement when plugged therein and, a probe contact engageable with only the power contact. First and second LEDs connect to a battery via first and second parallel circuits. A biasing resistor in the second circuit ensures that battery power is provided to only the first LED when a battery circuit is completed only by electrical engagement of the first contact and the probe contact with the power contact of the male coaxial connector to signal absence of a short circuit and to only the second LED when a circuit is completed also by engagement of the second tester contact with the ground contact of the lamp connector to signal a short circuit.

    摘要翻译： 用于灯，同轴插头连接器的连续性测试器具有插座连接器，其具有第一和第二同轴的环形插座触头，该插座连接器具有与灯连接器的电源和接地触点相同的轴向间隔，用于当插入其中时用于电接合，并且探针接触 只能与电源接触。 第一和第二LED通过第一和第二并联电路连接到电池。 第二电路中的偏置电阻确保仅当第一LED仅通过第一触点的电接合和与阳同轴连接器的电源触点的探针接触而完成电池电路而仅提供给第一LED，因为信号不存在 通过第二测试器接触与灯连接器的接地触点的接合来发出短路，当电路完成时也仅仅是第二个LED。

    METHOD FOR ANALYZING DATA UTILIZING WEIGHTED SUFFIX TREE
    4.
    发明申请
    METHOD FOR ANALYZING DATA UTILIZING WEIGHTED SUFFIX TREE 有权
    用于分析加权重量树的数据的方法

    公开(公告)号：US20130179393A1

    公开(公告)日：2013-07-11

    申请号：US13542679

    申请日：2012-07-06

    申请人： Meng-Feng TSAI ,  Min-Feng WANG ,  Cheng-Hsien TANG ,  Bo-Ru SONG ,  Ching-Hsuan SHEN ,  Hsin-Fu SU ,  Chi-Sheng HUANG

    发明人： Meng-Feng TSAI ,  Min-Feng WANG ,  Cheng-Hsien TANG ,  Bo-Ru SONG ,  Ching-Hsuan SHEN ,  Hsin-Fu SU ,  Chi-Sheng HUANG

    IPC分类号： G06F17/30

    CPC分类号： G06F17/30961 ,  G06F17/30958

    摘要： A method for analyzing data utilizing a weighted suffix tree includes receiving at least one original data sequence. An original data sequence ID is assigned to the original data sequence, and the original data sequence includes an original datums. A weighted suffix tree is constructed according to the original datums of the original data sequence. The weighted suffix tree includes several nodes, and each node includes a weight set which is formed by the original data sequence ID. Group information for classifying the original datums into several groups is received. The nodes of the weighted suffix tree belonging to a same group are merged according to the group information. Data is analyzed according to the weighted suffix tree after being merged.

    摘要翻译： 一种利用加权后缀树分析数据的方法包括接收至少一个原始数据序列。 原始数据序列ID被分配给原始数据序列，原始数据序列包括原始数据序列。 根据原始数据序列的原始数据构建加权后缀树。 加权后缀树包括几个节点，每个节点包括由原始数据序列ID形成的加权集合。 接收用于将原始基准分类为多个组的组信息。 属于同一组的加权后缀树的节点根据组信息进行合并。 合并后根据加权后缀树对数据进行分析。

    Method for analyzing data utilizing weighted suffix tree
    6.
    发明授权
    Method for analyzing data utilizing weighted suffix tree 有权
    使用加权后缀树分析数据的方法

    公开(公告)号：US08843521B2

    公开(公告)日：2014-09-23

    申请号：US13542679

    申请日：2012-07-06

    申请人： Meng-Feng Tsai ,  Min-Feng Wang ,  Cheng-Hsien Tang ,  Bo-Ru Song ,  Ching-Hsuan Shen ,  Hsin-Fu Su ,  Chi-Sheng Huang

    发明人： Meng-Feng Tsai ,  Min-Feng Wang ,  Cheng-Hsien Tang ,  Bo-Ru Song ,  Ching-Hsuan Shen ,  Hsin-Fu Su ,  Chi-Sheng Huang

    IPC分类号： G06F17/30

    CPC分类号： G06F17/30961 ,  G06F17/30958

    摘要： A method for analyzing data utilizing a weighted suffix tree includes receiving at least one original data sequence. An original data sequence ID is assigned to the original data sequence, and the original data sequence includes an original datums. A weighted suffix tree is constructed according to the original datums of the original data sequence. The weighted suffix tree includes several nodes, and each node includes a weight set which is formed by the original data sequence ID. Group information for classifying the original datums into several groups is received. The nodes of the weighted suffix tree belonging to a same group are merged according to the group information. Data is analyzed according to the weighted suffix tree after being merged.

    摘要翻译： 一种利用加权后缀树分析数据的方法包括接收至少一个原始数据序列。 原始数据序列ID被分配给原始数据序列，原始数据序列包括原始数据序列。 根据原始数据序列的原始数据构建加权后缀树。 加权后缀树包括几个节点，每个节点包括由原始数据序列ID形成的加权集合。 接收用于将原始基准分类为多个组的组信息。 属于同一组的加权后缀树的节点根据组信息进行合并。 合并后根据加权后缀树对数据进行分析。

    Method for forming contact hole
    7.
    发明授权
    Method for forming contact hole 有权
    形成接触孔的方法

    公开(公告)号：US08709946B2

    公开(公告)日：2014-04-29

    申请号：US13364252

    申请日：2012-02-01

    申请人： Meng-Feng Tsai ,  Yi-Shiang Chang ,  Chia-Chi Lin ,  I-Hsin Chen ,  Chia-Ming Wu

    发明人： Meng-Feng Tsai ,  Yi-Shiang Chang ,  Chia-Chi Lin ,  I-Hsin Chen ,  Chia-Ming Wu

    IPC分类号： H01L21/44

    CPC分类号： H01L21/76816 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144

    摘要： A method for forming contact holes includes following steps. A substrate including a dense region and an isolation region is provided. A material layer is formed on the substrate. Sacrificed patterns are formed on the material layer in the dense region, wherein there is a first opening between the two adjacent sacrificed patterns. A spacer is formed on each of two sides of each of the sacrificed patterns, wherein the spacers are separated from each other. The sacrificed patterns are removed to form a second opening between two adjacent spacers. A planar layer is formed to fill up the second openings. A first slit is formed in the planar layer, wherein the first slit exposes a portion of the material layer under the second openings. The portion of the material layer exposed by the first slit is removed to form third openings in the material layer.

    摘要翻译： 形成接触孔的方法包括以下步骤。 提供了包括密集区域和隔离区域的衬底。 在基板上形成材料层。 牺牲图案形成在致密区域的材料层上，其中在两个相邻的牺牲图案之间存在第一开口。 在每个牺牲图案的两侧的每一侧上形成间隔件，其中间隔件彼此分离。 去除牺牲的图案以在两个相邻间隔物之间​​形成第二开口。 形成平面层以填充第二开口。 第一狭缝形成在平面层中，其中第一狭缝暴露第二开口下方的材料层的一部分。 去除由第一狭缝暴露的材料层的部分以在材料层中形成第三开口。

    METHOD FOR FORMING CONTACT HOLE
    8.
    发明申请
    METHOD FOR FORMING CONTACT HOLE 有权
    形成接触孔的方法

    公开(公告)号：US20130137270A1

    公开(公告)日：2013-05-30

    申请号：US13364252

    申请日：2012-02-01

    申请人： Meng-Feng Tsai ,  Yi-Shiang Chang ,  Chia-Chi Lin ,  I-Hsin Chen ,  Chia-Ming Wu

    发明人： Meng-Feng Tsai ,  Yi-Shiang Chang ,  Chia-Chi Lin ,  I-Hsin Chen ,  Chia-Ming Wu

    IPC分类号： H01L21/32

    CPC分类号： H01L21/76816 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144

    摘要： A method for forming contact holes includes following steps. A substrate including a dense region and an isolation region is provided. A material layer is formed on the substrate. Sacrificed patterns are formed on the material layer in the dense region, wherein there is a first opening between the two adjacent sacrificed patterns. A spacer is formed on each of two sides of each of the sacrificed patterns, wherein the spacers are separated from each other. The sacrificed patterns are removed to form a second opening between two adjacent spacers. A planar layer is formed to fill up the second openings. A first slit is formed in the planar layer, wherein the first slit exposes a portion of the material layer under the second openings. The portion of the material layer exposed by the first slit is removed to form third openings in the material layer.

    摘要翻译： 形成接触孔的方法包括以下步骤。 提供了包括密集区域和隔离区域的衬底。 在基板上形成材料层。 牺牲图案形成在致密区域的材料层上，其中在两个相邻的牺牲图案之间存在第一开口。 在每个牺牲图案的两侧的每一侧上形成间隔件，其中间隔件彼此分离。 去除牺牲的图案以在两个相邻间隔物之间​​形成第二开口。 形成平面层以填充第二开口。 第一狭缝形成在平面层中，其中第一狭缝暴露第二开口下方的材料层的一部分。 去除由第一狭缝暴露的材料层的部分以在材料层中形成第三开口。

    Method and structure for performing a chemical mechanical polishing process
    9.
    发明授权
    Method and structure for performing a chemical mechanical polishing process 有权
    进行化学机械抛光工艺的方法和结构

    公开(公告)号：US08105899B2

    公开(公告)日：2012-01-31

    申请号：US12647367

    申请日：2009-12-24

    申请人： Lily Jiang ,  Meng Feng Tsai ,  Jian Guang Chang

    发明人： Lily Jiang ,  Meng Feng Tsai ,  Jian Guang Chang

    IPC分类号： H01L21/336 ,  H01L21/3205 ,  H01L21/302 ,  H01L21/31

    CPC分类号： H01L27/11521 ,  H01L21/28273 ,  H01L21/3212 ,  H01L21/84 ,  H01L29/66825

    摘要： A method for fabricating flash memory devices, e.g., NAND, NOR, is provided. The method includes providing a semiconductor substrate. The method includes forming a second polysilicon layer overlying a plurality of floating gate structures to cause formation of an upper surface provided on the second polysilicon layer. The upper surface has a first recessed region and a second recessed region. The method includes depositing a dielectric material overlying the upper surface to fill the first recessed region and the second recessed region to form a second upper surface region and cover a first elevated region, a second elevated region, and a third elevated region. The method forms at least one dielectric spacer within the first recessed region and at least one dielectric spacer within the second recessed region to form a resulting surface region, and subjects the resulting surface region to a chemical mechanical polishing process to cause formation of a substantially planarized second polysilicon layer free from the dielectric material.

    摘要翻译： 提供了一种用于制造闪存器件的方法，例如NAND，NOR。 该方法包括提供半导体衬底。 该方法包括形成覆盖多个浮动栅结构的第二多晶硅层，以形成设置在第二多晶硅层上的上表面。 上表面具有第一凹陷区域和第二凹陷区域。 该方法包括沉积覆盖上表面的电介质材料以填充第一凹陷区域和第二凹陷区域以形成第二上表面区域并覆盖第一升高区域，第二升高区域和第三升高区域。 该方法在第一凹陷区域内形成至少一个电介质间隔物，以及在第二凹陷区域内形成至少一个电介质间隔物，以形成所得表面区域，并使得到的表面区域进行化学机械抛光工艺，以形成基本平坦化的 第二多晶硅层不含介电材料。

    HLJ1 gene expression
    10.
    发明申请
    HLJ1 gene expression 审中-公开
    HLJ1基因表达

    公开(公告)号：US20060194235A1

    公开(公告)日：2006-08-31

    申请号：US11360671

    申请日：2006-02-24

    申请人： Jian-Wei Chen ,  Meng-Feng Tsai ,  Chi-Chung Wang ,  Pan-Chyr Yang

    发明人： Jian-Wei Chen ,  Meng-Feng Tsai ,  Chi-Chung Wang ,  Pan-Chyr Yang

    IPC分类号： C12Q1/68 ,  G01N33/574 ,  C07H21/04 ,  C07K16/30 ,  C07K14/82

    CPC分类号： C12Q1/6886 ,  C07K14/47 ,  C07K16/18 ,  C12Q2600/118 ,  C12Q2600/136 ,  G01N33/57423 ,  G01N33/57496 ,  G01N2500/00

    摘要： The human HLJ1 tumor suppressor gene is herein defined as regulated by promoter, enhancer, and silencer regions. HLJ1 promoter activity and gene expression are inversely correlated with metastatic ability. HLJ1 is highly expressed, and inducible, in cells with low metastatic ability and expressed to a lesser extent in highly metastatic cells. HLJ1 gene expression suppressed the growth of human lung adenocarcinoma cells in vitro, and inhibited tumor growth in vivo. It also impeded the motility of human adenocarcinoma cells and reduced the anchorage-independent growth capacity and invasiveness of metastatic lung adenocarcinoma cells. The degree to which human lung adenocarcinoma patients express HLJ1 predicts their survival prognosis and their probability of relapse.

    摘要翻译： 本文定义的人HLJ1肿瘤抑制基因被启动子，增强子和消音区限制。 HLJ1启动子活性和基因表达与转移能力呈负相关。 HLJ1在具有低转移能力的细胞中高度表达并且可诱导，并且在高度转移的细胞中表达较少程度。 HLJ1基因表达体外抑制人肺腺癌细胞生长，体内抑制肿瘤生长。 它也阻碍了人腺癌细胞的运动，降低了锚定依赖性的生长能力和转移性肺腺癌细胞的侵袭能力。 人肺腺癌患者表达HLJ1的程度预测其生存预后及其复发概率。