Abstract:
The present invention is a storage element for controlling a logic circuit and a logic device having a plurality of storage elements. The storage element has a first and a second non-volatile memory cells connected in series at an output node Each of the first and second non-volatile memory cells is for storing a state opposite to the other. A multiplexer has an input, a switched input and two outputs. The output node is connected to the input of the multiplexer. One of the outputs is used to control the logic circuit. The other output is connected to a bit line which is connected to a sense amplifier. Finally, the switched input receives a switch signal and outputs the signal from the output node to either the one output or the other output.
Abstract:
An improved heatsink attachment assembly includes a first anchor configured to secure to a first location of the circuit board, and a second anchor configured to secure to a second location of the circuit board. Each anchor includes legs having looped end portions configured to contact the circuit board. The heatsink attachment assembly further includes a heatsink clip configured to concurrently (i) fasten to the anchors when the anchors secure to the circuit board, and (ii) hold a heatsink to against a circuit board component of the circuit board. The looped end portions of the legs prevent the legs from completely passing through holes defined in the circuit board. In some situations, the looped end portions define extended coils (e.g., double loops) for a robust interference fit with the circuit board as well as for enhanced strength and stability.
Abstract:
A control assembly controls removal of a circuit board from a chassis. The control assembly includes a support member configured to fasten to the circuit board, and a handle pivotally attached to the support member. The handle is configured to swing from an opened position to a closed position relative to the support member during installation of the circuit board within the chassis, and from the closed position to the opened position during removal of the circuit board from the chassis. The control assembly further includes a button configured to move between a biased position and a depressed position relative to the support member. The button is further configured to (i) inhibit removal of the circuit board from the chassis when the button is in the biased position, and (ii) enable removal of the circuit board from the chassis when the button is in the depressed position.
Abstract:
A retainer directly attaches to a circuit board component and to a heat sink and secures the circuit board component to the heat sink. The retainer provides a mechanical attachment between the heat sink and the circuit board component. Such mechanical attachment maintains thermal communication between the heat sink and the circuit board component in the absence of a thermally conductive adhesive between the heat sink and the circuit board component for the operational life of the circuit board component. Furthermore, because the retainer attaches directly to the circuit board component and to the heat sink, the retainer minimizes the necessity for use of mounting holes in the circuit board associated with the circuit board component to secure the heat sink to the circuit board component.
Abstract:
A power rectifier having low on resistance, fast recovery times and very low forward voltage drop. In a preferred embodiment, the present invention provides a power rectifier device employing a vertical device structure, i.e., with current flow between the major surfaces of the discrete device. The device employs a large number of parallel connected cells, each comprising a MOSFET structure with a gate to drain short via a common metallization. A self aligned body implant and a shallow silicide drain contact region integrated with a metal silicide drain contact define a narrow channel region and allow very high cell density. This provides a low Vf path through the channel regions of the MOSFET cells to the contact on the other side of the integrated circuit. The present invention further provides a method for manufacturing a rectifier device which provides the above desirable device characteristics in a repeatable manner. Also, only two masking steps are required, reducing processing costs.
Abstract:
A reconfigurable patch panel and a method of reconfiguring a patch panel comprising a support member supporting at least one adapter, where the at least one adapter comprises a plurality of ports for coupling to electric signal bearing cables. A pivot, associated with each of the at least one adapters, couples the at least one adapter to the support member. The at least one adapter selectively rotates about the pivot to a selected position relative to the support member. A retainer, associated with each of the at least one adapters, couples the support member to the at least one adapter and retains the at least one adapter in the selected position.
Abstract:
A reconfigurable patch panel and a method of reconfiguring a patch panel comprising a support member supporting at least one adapter, where the at least one adapter comprises a plurality of ports for coupling to electric signal bearing cables. A pivot, associated with each of the at least one adapters, couples the at least one adapter to the support member. The at least one adapter selectively rotates about the pivot to a selected position relative to the support member. A retainer, associated with each of the at least one adapters, couples the support member to the at least one adapter and retains the at least one adapter in the selected position.
Abstract:
The present invention is a storage element for controlling a logic circuit and a logic device having a plurality of storage elements. The storage element has a first and a second non-volatile memory cells connected in series at an output node. Each of the first and second non-volatile memory cells is for storing a state opposite to the other. A demultiplexer has an input, a switched input and two outputs. The output node is connected to the input of the demultiplexer. One of the outputs is used to control the logic circuit. The other output is connected to a bit line which is connected to a sense amplifier. Finally, the switched input receives a switch signal and outputs the signal from the output node to either the one output or the other output.
Abstract:
A flash memory cell is of the type having a substrate of a first conductivity type having a first region of a second conductivity type at a first end, and a second region of the second conductivity type at a second end, spaced apart from the first end, with a channel region between the first end and the second end. The flash memory cell has a plurality of stacked pairs of floating gates and control gates with the floating gates positioned over portions of the channel region and are insulated therefrom, and each control gate over a floating gate and insulated therefrom. The flash memory cell further has a plurality of erase gates over the channel region which are insulated therefrom, with an erase gate between each pair of stacked pair of floating gate and control gate. In a method of erasing the flash memory cell, a pulse of a first positive voltage is applied to alternating erase gates (“first alternating gates”). In addition, a ground voltage is applied to erase gates other than the first alternating gates (“second alternating gates”). In a second method to erase the flash memory cell, a pulse of a first positive voltage is applied to the first alternating gates and a negative voltage is applied to the second alternating gates and to all control gates.
Abstract:
A flash memory cell is of the type having a substrate of a first conductivity type having a first region of a second conductivity type at a first end, and a second region of the second conductivity type at a second end, spaced apart from the first end, with a channel region between the first end and the second end. The flash memory cell has a plurality of stacked pairs of floating gates and control gates with the floating gates positioned over portions of the channel region and are insulated therefrom, and each control gate over a floating gate and insulated therefrom. The flash memory cell further has a plurality of erase gates over the channel region which are insulated therefrom, with an erase gate between each pair of stacked pair of floating gate and control gate. In a method of erasing the flash memory cell, a pulse of a first positive voltage is applied to alternating erase gates (“first alternating gates”). In addition, a ground voltage is applied to erase gates other than the first alternating gates (“second alternating gates”). In a second method to erase the flash memory cell, a pulse of a first positive voltage is applied to the first alternating gates and a negative voltage is applied to the second alternating gates and to all control gates.