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    Stacked magnetic devices
    1.
    发明申请
    Stacked magnetic devices 审中-公开
    堆叠式磁性器件

    公开(公告)号：US20060092688A1

    公开(公告)日：2006-05-04

    申请号：US10977792

    申请日：2004-10-29

    申请人： Sivananda Kanakasabapathy ,  Yu Lu ,  Michael Gaidis

    发明人： Sivananda Kanakasabapathy ,  Yu Lu ,  Michael Gaidis

    IPC分类号： G11C11/00

    CPC分类号： G11C11/15

    摘要： Techniques for improving magnetic device performance are provided. In one aspect, a magnetic device, e.g., a magnetic random access memory device, is provided which comprises a plurality of current carrying lines; and two or more adjacent stacked magnetic toggling devices sharing at least one of the plurality of current carrying lines in common and positioned therebetween. The magnetic device is configured such that at least one of the adjacent magnetic toggling devices toggles mutually exclusively of another of the adjacent magnetic toggling devices. In an exemplary embodiment, the magnetic device comprises a plurality of levels with each of the adjacent stacked magnetic toggling devices residing in a different level.

    摘要翻译： 提供了提高磁性器件性能的技术。 在一个方面，提供一种磁性装置，例如磁性随机存取存储装置，其包括多个载流线; 以及两个或更多个相邻的层叠磁性切换装置，其共同地共享多个载流线中的至少一个并且位于它们之间。 磁性装置被配置成使得至少一个相邻的磁性切换装置互相切换另一个相邻的磁性切换装置。 在示例性实施例中，磁性装置包括多个级别，其中每个相邻的层叠磁性切换装置处于不同的水平。

    Utilizing sidewall spacer features to form magnetic tunnel junctions in an integrated circuit
    2.
    发明申请
    Utilizing sidewall spacer features to form magnetic tunnel junctions in an integrated circuit 有权
    利用侧壁间隔物特征在集成电路中形成磁隧道结

    公开(公告)号：US20070166840A1

    公开(公告)日：2007-07-19

    申请号：US11333997

    申请日：2006-01-18

    申请人： Solomon Assefa ,  Michael Gaidis ,  Sivananda Kanakasabapathy ,  John Hummel ,  David Abraham

    发明人： Solomon Assefa ,  Michael Gaidis ,  Sivananda Kanakasabapathy ,  John Hummel ,  David Abraham

    IPC分类号： H01L21/00 ,  H01L29/94

    CPC分类号： H01L43/12 ,  H01L27/222

    摘要： Novel methods for reliably and reproducibly forming magnetic tunnel junctions in integrated circuits are described. In accordance with aspects of the invention, sidewall spacer features are utilized during the processing of the film stack. Advantageously, these sidewall spacer features create a tapered masking feature which helps to avoid byproduct redeposition during the etching of the MTJ film stack, thereby improving process yield. Moreover, the sidewall spacer features may be used as encapsulating layers during subsequent processing steps and as vertical contacts to higher levels of metallization.

    摘要翻译： 描述了在集成电路中可靠且可重复地形成磁隧道结的新方法。 根据本发明的方面，在膜叠层的处理期间利用侧壁间隔物特征。 有利地，这些侧壁间隔物特征产生锥形掩蔽特征，其有助于避免在MTJ膜叠层的蚀刻期间的副产物再沉积，从而提高工艺产率。 此外，侧壁间隔物特征可以在随后的处理步骤期间用作包封层，并且可以用作垂直接触以进行更高级别的金属化。

    Magnetic Devices and Techniques For Formation Thereof
    3.
    发明申请
    Magnetic Devices and Techniques For Formation Thereof 失效
    磁性器件及其形成技术

    公开(公告)号：US20080043379A1

    公开(公告)日：2008-02-21

    申请号：US11926845

    申请日：2007-10-29

    申请人： Sivananda Kanakasabapathy ,  Michael Gaidis

    发明人： Sivananda Kanakasabapathy ,  Michael Gaidis

    IPC分类号： G11B5/33

    CPC分类号： H01L43/12 ,  H01L21/76897 ,  H01L27/222 ,  H01L43/08 ,  H01L2924/3011

    摘要： Techniques for forming a magnetic device are provided. In one aspect, a magnetic device includes a magnetic tunnel junction and a dielectric layer formed over at least a portion of the magnetic tunnel junction. The dielectric layer is configured to have an underlayer proximate to the magnetic tunnel junction, and an overlayer on a side of the underlayer opposite the magnetic tunnel junction. The magnetic device further includes a via hole running substantially vertically through the dielectric layer and being self-aligned with the magnetic tunnel junction.

    摘要翻译： 提供了用于形成磁性装置的技术。 在一个方面，磁性装置包括形成在磁性隧道结的至少一部分上的磁性隧道结和介电层。 介电层被配置为具有靠近磁性隧道结的底层，以及与该底层的与磁性隧道结相对的一侧上的覆盖层。 磁性器件还包括通孔，该通孔基本垂直穿过介电层并与磁性隧道结自对准。

    Magnetic devices and techniques for formation thereof
    4.
    发明申请
    Magnetic devices and techniques for formation thereof 失效
    磁性器件及其形成技术

    公开(公告)号：US20070048950A1

    公开(公告)日：2007-03-01

    申请号：US11209951

    申请日：2005-08-23

    申请人： Sivananda Kanakasabapathy ,  Michael Gaidis

    发明人： Sivananda Kanakasabapathy ,  Michael Gaidis

    IPC分类号： H01L21/336

    CPC分类号： H01L43/12 ,  H01L21/76897 ,  H01L27/222 ,  H01L43/08 ,  H01L2924/3011

    摘要： Techniques for forming a magnetic device are provided. In one aspect, a method of forming a via hole self-aligned with a magnetic device comprises the following steps. A dielectric layer is formed over at least a portion of the magnetic device. The dielectric layer is configured to have an underlayer proximate to the magnetic device which comprises a first material, and an overlayer on a side of the underlayer opposite the magnetic device which comprises a second material. The first material is different from the second material. In a first etching phase, a first etchant is used to etch the dielectric layer, beginning with the overlayer, and through the overlayer. In a second etching phase, a second etchant which is selective for etching the underlayer is used to etch the dielectric layer through the underlayer.

    摘要翻译： 提供了用于形成磁性装置的技术。 一方面，形成与磁性装置自对准的通孔的方法包括以下步骤。 在磁性器件的至少一部分上形成电介质层。 电介质层被配置为具有靠近磁性装置的底层，其包括第一材料，并且在与包括第二材料的磁性装置相对的底层的一侧上的覆盖层。 第一种材料与第二种材料不同。 在第一蚀刻阶段中，使用第一蚀刻剂来从覆盖层开始并通过覆盖层来蚀刻介电层。 在第二蚀刻阶段中，使用用于蚀刻底层的第二蚀刻剂来蚀刻通过底层的介电层。

    Hard mask structure for patterning of materials
    5.
    发明申请
    Hard mask structure for patterning of materials 有权
    用于图案化材料的硬掩模结构

    公开(公告)号：US20070020934A1

    公开(公告)日：2007-01-25

    申请号：US11177008

    申请日：2005-07-08

    申请人： Michael Gaidis ,  Sivananda Kanakasabapathy ,  Eugene O'Sullivan

    发明人： Michael Gaidis ,  Sivananda Kanakasabapathy ,  Eugene O'Sullivan

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： H01L43/12 ,  H01L21/0332 ,  H01L21/0337 ,  H01L27/11507 ,  H01L28/65

    摘要： Techniques for magnetic device fabrication are provided. In one aspect, a method of patterning at least one, e.g., nonvolatile, material comprises the following steps. A hard mask structure is formed on at least one surface of the material to be patterned. The hard mask structure is configured to have a base, proximate to the material, and a top opposite the base. The base has one or more lateral dimensions that are greater than one or more lateral dimensions of the top of the hard mask structure, such that at least one portion of the base extends out laterally a substantial distance beyond the top. The top of the hard mask structure is at a greater vertical distance from the material being etched than the base. The material is etched.

    摘要翻译： 提供了磁性器件制造技术。 一方面，图案化至少一种，例如非挥发性材料的方法包括以下步骤。 在待图案化材料的至少一个表面上形成硬掩模结构。 硬掩模结构被配置为具有靠近材料的基部和与基部相对的顶部。 基座具有大于硬掩模结构的顶部的一个或多个横向尺寸的一个或多个横向尺寸，使得基部的至少一部分横向延伸超过顶部的实质距离。 硬掩模结构的顶部距离被蚀刻的材料比基底更大的垂直距离。 材料被蚀刻。

    Ferromagnetic liner for conductive lines of magnetic memory cells
    9.
    发明申请
    Ferromagnetic liner for conductive lines of magnetic memory cells 审中-公开
    磁记忆体导电线的铁磁衬垫

    公开(公告)号：US20060022286A1

    公开(公告)日：2006-02-02

    申请号：US10903356

    申请日：2004-07-30

    申请人： Rainer Leuschner ,  Michael Gaidis ,  Judith Rubino ,  Lubomyr Romankiw

    发明人： Rainer Leuschner ,  Michael Gaidis ,  Judith Rubino ,  Lubomyr Romankiw

    IPC分类号： H01L23/52 ,  H01L21/4763

    CPC分类号： H01L21/76852 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76885 ,  H01L27/228 ,  H01L43/12

    摘要： A method of forming a ferromagnetic liner on conductive lines of magnetic memory devices and a structure thereof. The ferromagnetic liner increases the flux concentration of current run through the conductive lines, reducing the amount of write current needed to switch magnetic memory cells. The conductive lines are formed in a plate-up method, and the ferromagnetic liner is selectively formed on the plated conductive lines. The ferromagnetic liner may also be formed over conductive lines and a top portion of vias in a peripheral region of the workpiece.

    摘要翻译： 一种在磁存储器件的导线上形成铁磁衬垫的方法及其结构。 铁磁衬垫增加了通过导线延伸的电流的通量浓度，从而减少了切换磁存储单元所需的写入电流。 导电线以平板化方式形成，并且铁电衬里选择性地形成在镀覆的导电线上。 铁磁衬垫也可以形成在工件的外围区域中的导电线和通孔的顶部上。