Etchant composition for molybdenum and method of using same
    5.
    发明授权
    Etchant composition for molybdenum and method of using same 有权
    用于钼的蚀刻剂组合物及其使用方法

    公开(公告)号:US06797621B2

    公开(公告)日:2004-09-28

    申请号:US09801804

    申请日:2001-03-09

    IPC分类号: H01L21302

    CPC分类号: C23F1/26

    摘要: An etchant composition for molybdenum includes: 5 to 20% by weight of hydrogen peroxide (H2O2); 75 to 94% by weight of water; and an additive including a pH controlling agent. The etching composition is particularly useful for the fabrication of semiconductor devices. Molybdenum may be etched from a substrate by applying the etchant composition, preferably by spraying or immersion, and preferably at a temperature range of 30° C. to 45° C.

    摘要翻译: 用于钼的蚀刻剂组合物包括:5至20重量%的过氧化氢(H 2 O 2); 75至94重量%的水; 和包含pH控制剂的添加剂。 蚀刻组合物特别适用于制造半导体器件。 可以通过施加蚀刻剂组合物,优选通过喷涂或浸渍,优选在30℃至45℃的温度范围内从基底上蚀刻钼。

    Etchant composition for molybdenum and method of using same
    7.
    发明申请
    Etchant composition for molybdenum and method of using same 审中-公开
    用于钼的蚀刻剂组合物及其使用方法

    公开(公告)号:US20050020081A1

    公开(公告)日:2005-01-27

    申请号:US10925003

    申请日:2004-08-25

    CPC分类号: C23F1/26

    摘要: An etchant composition for molybdenum includes: 5 to 20% by weight of hydrogen peroxide (H2O2); 75 to 94% by weight of water; and an additive including a pH controlling agent. The etching composition is particularly useful for the fabrication of semiconductor devices. Molybdenum may be etched from a substrate by applying the etchant composition, preferably by spraying or immersion, and preferably at a temperature range of 30° C. to 45° C.

    摘要翻译: 用于钼的蚀刻剂组合物包括:5至20重量%的过氧化氢(H 2 O 2); 75至94重量%的水; 和包含pH控制剂的添加剂。 蚀刻组合物特别适用于制造半导体器件。 可以通过施加蚀刻剂组合物,优选通过喷涂或浸渍,优选在30℃至45℃的温度范围内,从基底上蚀刻钼。