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公开(公告)号：US20050258550A1
公开(公告)日：2005-11-24
申请号：US11066200
申请日：2005-02-25
IPC分类号： H01L23/12 , H01L21/48 , H01L23/14 , H01L23/373 , H01L23/52 , H05K1/02 , H05K1/03 , H05K1/05 , H05K3/24
CPC分类号： H05K1/0271 , H01L21/4871 , H01L23/3735 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/45124 , H01L2224/48091 , H01L2224/48227 , H01L2224/49111 , H01L2224/49175 , H01L2224/73265 , H01L2924/00014 , H01L2924/01019 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/12041 , H01L2924/1301 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/19107 , H05K1/0306 , H05K1/05 , H05K3/0061 , H05K3/244 , H05K2201/0209 , H05K2201/0355 , H05K2201/068 , H01L2924/00 , H01L2924/00012 , H01L2224/45015 , H01L2924/207
摘要： There is provided a thinner high frequency power module structure having reduced the mounting area. An insulated board is provided with a composite metal board in which the Cu2O powder particles are dispersed into a matrix metal (Cu) (amount of addition of Cu2O: 20 vol %; thermal expansion coefficient: 10.0 ppm/° C.; thermal conductivity: 280 W/m•K; thickness: 1 mm; size: 42.4×85 mm), a silicon nitride board (thermal expansion coefficient: 3.4 ppm/° C.; thermal conductivity: 90 W/m•K; thickness: 0.3 mm; size: 30×50 mm) deposited with Ag-system bonding metal layer to one principal surface of the composite metal board, and a wiring metal board formed of copper or copper alloy provided to the other principal surface of the ceramics insulated board. For example, the bonding metal layer is adjusted in the thickness to 50 μm, while the wiring metal board is also adjusted in the thickness to 0.4 mm. In the integrated board of the wiring and heat radiating boards, the Ni plating layer (thickness: 6 μm, not illustrated) is formed with the non-electrolyte wet plating process to the surface metal layer of the wiring metal board and composite metal board. This Ni plating layer is formed to the wiring metal boards in order to attain the solder bondability to mount the semiconductor base material with the brazing method and to enhance the wire bondability of the wiring metal board. Moreover, this Ni plating layer effectively prevents denaturation of the internal side by shutting off from the external atmosphere.
摘要翻译： 提供了一种较薄的高频功率模块结构，减少了安装面积。 绝缘板设置有复合金属板，其中Cu 2 O 3粉末颗粒分散在基体金属（Cu）中（Cu 2 O 2的添加量： 20vol％;热膨胀系数：10.0ppm /℃;导热率：280W / mK;厚度：1mm;尺寸：42.4×85mm），氮化硅板（热膨胀系数：3.4ppm /℃ ;将Ag系接合金属层沉积在复合金属板的一个主表面上的导热率：90W / mK;厚度：0.3mm;尺寸：30x50mm），以及由铜或铜合金制成的布线金属板， 陶瓷绝缘板的另一主面。 例如，将接合金属层的厚度调整为50μm，同时将布线金属板的厚度调整为0.4mm。 在布线和散热板的集成电路板中，通过非电解质湿式电镀工艺将金属镀层（厚度：6μm，未示出）形成到布线金属板和复合金属板的表面金属层。 为了获得通过钎焊方法安装半导体基材的焊料接合性，并且提高布线用金属板的引线接合性，将该Ni镀层形成于配线用金属板。 此外，该Ni镀层通过从外部气氛切断而有效地防止内侧的变性。
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公开(公告)号：US20050221538A1
公开(公告)日：2005-10-06
申请号：US11062867
申请日：2005-02-23
IPC分类号： H01L23/12 , H01L21/44 , H01L21/58 , H01L23/24 , H01L23/36 , H01L23/373 , H01L23/488 , H01L23/498 , H01L25/07 , H01L25/18 , H01R43/02 , H05K1/03 , H05K3/00 , H05K3/34
CPC分类号： H05K3/0061 , H01L23/24 , H01L23/3735 , H01L23/488 , H01L24/45 , H01L24/48 , H01L24/73 , H01L2224/32225 , H01L2224/45124 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/92247 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01028 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/19107 , H05K1/0306 , H05K3/341 , H05K2201/0215 , H05K2201/2036 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： A semiconductor device having both high strength and high thermal radiation that is capable of being applied to mounting on automobiles experiencing many thermal cycles, and a manufacturing method thereof are provided. A circuit board 1a for a resin encapsulated semiconductor module device has a configuration where a silicon nitride plate 2 with a thickness of 0.635 mm has copper plates of 1.0 mm and 0.8 mm bonded to both sides thereof via active metal. A copper plate 3a is bonded to the surface side of the silicon nitride plate 2, and a prescribed circuit pattern is formed on the copper plate 3a. Tin-silver-copper cream solder layers 4a and 4b with a thickness of 200 μm are formed at a prescribed location on the circuit pattern 3a on which a semiconductor element 6 is mounted and at a prescribed location of a base plate 1 on which the circuit board 1a is disposed. Nickel particles 5 having a maximum particle size of 100 μm and an average particle size of 70 μm are dispersed in the solder 4a on the base plate 1 of good thermal conductivity. A semiconductor element (chip) 6, the circuit board 1a, and the base plate 1 are disposed on predetermined locations. Thereafter, they are set in a reflow oven (not shown in the drawings) for reflow soldering. After the inside of the reflow oven is replaced by a nitrogen atmosphere, the reflow oven is heated to 280° C. At the time when solder is melted, the inside of the oven is decompressed to 1 Pa, nitrogen is introduced, and the reflow oven is cooled to about room temperature, thereby completing the solder bonding step. After flux is washed, an outer case 7 with an insert-molded outlet terminal 8 is adhered to the base plate 1 and a predetermined connection is conducted via an aluminum bonding wire 9. Then, silicone gel 10 is injected into a package delimited via the base plate 1 and the outer case 7, and the silicone gel 10 is heat-hardened, thereby completing a resin encapsulated semiconductor device A.
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公开(公告)号：US07372132B2
公开(公告)日：2008-05-13
申请号：US11062867
申请日：2005-02-23
IPC分类号： H01L23/34
CPC分类号： H05K3/0061 , H01L23/24 , H01L23/3735 , H01L23/488 , H01L24/45 , H01L24/48 , H01L24/73 , H01L2224/32225 , H01L2224/45124 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/92247 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01028 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/19107 , H05K1/0306 , H05K3/341 , H05K2201/0215 , H05K2201/2036 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： A semiconductor device having both high strength and high thermal radiation that is capable of being applied to mounting on automobiles experiencing many thermal cycles, and a manufacturing method thereof are provided. A circuit board 1a for a resin encapsulated semiconductor module device has a configuration where a silicon nitride plate 2 with a thickness of 0.635 mm has copper plates of 1.0 mm and 0.8 mm bonded to both sides thereof via active metal. A copper plate 3a is bonded to the surface side of the silicon nitride plate 2, and a prescribed circuit pattern is formed on the copper plate 3a. Tin-silver-copper cream solder layers 4a and 4b with a thickness of 200 μm are formed at a prescribed location on the circuit pattern 3a on which a semiconductor element 6 is mounted and at a prescribed location of a base plate 1 on which the circuit board 1a is disposed. Nickel particles 5 having a maximum particle size of 100 μm and an average particle size of 70 μm are dispersed in the solder 4a on the base plate 1 of good thermal conductivity. A semiconductor element (chip) 6, the circuit board 1a, and the base plate 1 are disposed on predetermined locations. Thereafter, they are set in a reflow oven (not shown in the drawings) for reflow soldering. After the inside of the reflow oven is replaced by a nitrogen atmosphere, the reflow oven is heated to 280° C. At the time when solder is melted, the inside of the oven is decompressed to 1 Pa, nitrogen is introduced, and the reflow oven is cooled to about room temperature, thereby completing the solder bonding step. After flux is washed, an outer case 7 with an insert-molded outlet terminal 8 is adhered to the base plate 1 and a predetermined connection is conducted via an aluminum bonding wire 9. Then, silicone gel 10 is injected into a package delimited via the base plate 1 and the outer case 7, and the silicone gel 10 is heat-hardened, thereby completing a resin encapsulated semiconductor device A.
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