公开(公告)号：US10483325B2

公开(公告)日：2019-11-19

申请号：US15758928

申请日：2016-09-09

申请人： University Of Florida Research Foundation, Incorporated ,  Nanoholdings, LLC

发明人： Franky So ,  Do Young Kim ,  Hyeonggeun Yu ,  Bhabendra K. Pradhan

IPC分类号： H01L27/28 ,  H01L51/00 ,  H01L51/42 ,  H01L51/44

摘要： A photonic conversion device is provided, comprising a photoactive layer, a dielectric layer, a porous conductor layer, and an electron transport layer in contact with the porous conductor layer. A light emitting device may be in contact with the electron transport layer, forming a conversion device with gain. A method of manufacturing a photonic conversion device may also be provided, comprising forming a photoactive layer, forming a dielectric layer over the photoactive layer, and depositing a conductor layer in contact with the dielectric layer, wherein one or more regions of the dielectric layer are masked during deposition such that the conductor layer includes a plurality of pores that extend through the conductor layer.

公开(公告)号：US09997571B2

公开(公告)日：2018-06-12

申请号：US14247130

申请日：2014-04-07

申请人： University of Florida Research Foundation, Inc. ,  Nanoholdings, LLC

发明人： Franky So ,  Do Young Kim ,  Dong Woo Song ,  Galileo Sarasqueta ,  Bhabendra K. Pradhan ,  Jae Woong Lee

IPC分类号： G01J5/20 ,  H01L27/28 ,  H01L31/0232 ,  H01L31/102 ,  H01L27/32 ,  H01L31/0296 ,  H01L51/00 ,  H01L51/50 ,  H01L51/42

CPC分类号： H01L27/288 ,  H01L27/3227 ,  H01L31/02322 ,  H01L31/0296 ,  H01L31/102 ,  H01L51/0047 ,  H01L51/0078 ,  H01L51/4273 ,  H01L51/5056 ,  H01L51/5072 ,  H01L51/5092 ,  H01L51/5096 ,  Y02E10/549

摘要： Embodiments of the invention are directed to an improved device for sensing infrared (IR) radiation with up-conversion to provide an output of electromagnetic radiation having a shorter wavelength than the incident IR radiation, such as visible light. The device comprises an anode, a hole blocking layer to separate an IR sensing layer from the anode, an organic light emitting layer that is separated from the anode by the IR sensing layer, and a cathode. The hole blocking layer assures that when a potential is applied between the anode and the cathode the organic light emitting layer generates electromagnetic radiation only when the IR sensing layer is irradiated with IR radiation.

公开(公告)号：US09214502B2

公开(公告)日：2015-12-15

申请号：US14568794

申请日：2014-12-12

申请人： University of Florida Research Foundation, Inc. ,  Nanoholdings, LLC

发明人： Franky So ,  Do Young Kim ,  Bhabendra K. Pradhan

IPC分类号： H01L21/00 ,  H01L27/32 ,  H01L31/101 ,  H01L31/0232 ,  H01L51/42 ,  H01L31/032 ,  H01L31/0352 ,  G02B23/12 ,  H01L31/028 ,  H01L31/0304 ,  H01L51/00 ,  H01L27/30

CPC分类号： H01L27/3234 ,  G02B23/12 ,  H01L27/288 ,  H01L27/305 ,  H01L27/3227 ,  H01L31/02322 ,  H01L31/028 ,  H01L31/0304 ,  H01L31/032 ,  H01L31/0324 ,  H01L31/035218 ,  H01L31/101 ,  H01L51/0053 ,  H01L51/4246 ,  H01L51/4293 ,  H01L2251/308 ,  Y02E10/549

摘要： Embodiments of the invention are directed to IR photodetectors with gain resulting from the positioning of a charge multiplication layer (CML) between the cathode and the IR sensitizing layer of the photodetector, where accumulating charge at the CML reduces the energy difference between the cathode and the CML to promote injection of electrons that result in gain for an electron only device. Other embodiments of the invention are directed to inclusion of the IR photodetectors with gain into an IR-to-visible up-conversion device that can be used in night vision and other applications.

公开(公告)号：US20190393271A1

公开(公告)日：2019-12-26

申请号：US16449581

申请日：2019-06-24

申请人： North Carolina State University ,  Nanoholdings, LLC

发明人： Franky So ,  Ryan Larrabee ,  Nilesh Barange ,  Bhabendra Pradhan

IPC分类号： H01L27/28 ,  H01L51/44 ,  H01L51/50 ,  H01L51/52 ,  H01L51/42

摘要： An up-conversion device includes a light detecting device and a light emitting device. The light detecting device includes a first electrode, a first electron transport layer, an infrared (IR) sensitizing layer, a first hole transport layer, and a second electrode. The light detecting device receives a first optical signal at a first wavelength. The light emitting device is formed on the light detecting device. The light emitting device shares the second electrode with the light detecting device, and includes a second hole transport layer, a light emitting layer, a second electron transport layer, and a third electrode. The light emitting device outputs a second optical signal at a second wavelength based on the first optical signal and biasing of the light detecting device and the light emitting device.

公开(公告)号：US09196661B2

公开(公告)日：2015-11-24

申请号：US14463546

申请日：2014-08-19

申请人： University of Florida Research Foundation, Inc. ,  Nanoholdings, LLC

发明人： Franky So ,  Do Young Kim ,  Bhabendra K. Pradhan

IPC分类号： H01L29/08 ,  H01L35/24 ,  H01L51/00 ,  G01J5/02 ,  H01L27/32 ,  H01L31/101 ,  H01L31/0232 ,  H01L51/42 ,  H01L31/032 ,  H01L31/0352 ,  H01L27/30

CPC分类号： H01L27/3234 ,  G02B23/12 ,  H01L27/288 ,  H01L27/305 ,  H01L27/3227 ,  H01L31/02322 ,  H01L31/028 ,  H01L31/0304 ,  H01L31/032 ,  H01L31/0324 ,  H01L31/035218 ,  H01L31/101 ,  H01L51/0053 ,  H01L51/4246 ,  H01L51/4293 ,  H01L2251/308 ,  Y02E10/549

摘要： Embodiments of the invention are directed to IR photodetectors with gain resulting from the positioning of a charge multiplication layer (CML) between the cathode and the IR sensitizing layer of the photodetector, where accumulating charge at the CML reduces the energy difference between the cathode and the CML to promote injection of electrons that result in gain for an electron only device. Other embodiments of the invention are directed to inclusion of the IR photodetectors with gain into an IR-to-visible up-conversion device that can be used in night vision and other applications.

摘要翻译： 本发明的实施例涉及具有由光电检测器的阴极和IR感光层之间的电荷倍增层（CML）的定位产生的增益的红外光电检测器，其中在CML处累积电荷降低了阴极和 CML促进注入电子，导致仅电子器件的增益。 本发明的其它实施例涉及将红外光电检测器的增益包括在可用于夜视和其他应用的IR到可见的上转换装置中。

公开(公告)号：US20140367572A1

公开(公告)日：2014-12-18

申请号：US14247130

申请日：2014-04-07

申请人： University of Florida Research Foundation, Inc. ,  Nanoholdings, LLC

发明人： Franky So ,  Do Young Kim ,  Dong Woo Song ,  Galileo Sarasqueta ,  Bhabendra K. Pradhan

IPC分类号： H01L27/28 ,  H01L51/50 ,  H01L31/0296 ,  H01L27/32 ,  H01L51/00

CPC分类号： H01L27/288 ,  H01L27/3227 ,  H01L31/02322 ,  H01L31/0296 ,  H01L31/102 ,  H01L51/0047 ,  H01L51/0078 ,  H01L51/4273 ,  H01L51/5056 ,  H01L51/5072 ,  H01L51/5092 ,  H01L51/5096 ,  Y02E10/549

摘要： Embodiments of the invention are directed to an improved device for sensing infrared (IR) radiation with up-conversion to provide an output of electromagnetic radiation having a shorter wavelength than the incident IR radiation, such as visible light. The device comprises an anode, a hole blocking layer to separate an IR sensing layer from the anode, an organic light emitting layer that is separated from the anode by the IR sensing layer, and a cathode. The hole blocking layer assures that when a potential is applied between the anode and the cathode the organic light emitting layer generates electromagnetic radiation only when the IR sensing layer is irradiated with IR radiation.

摘要翻译： 本发明的实施例涉及一种用于通过向上转换来感测红外（IR）辐射的改进装置，以提供具有比入射的IR辐射（例如可见光）更短的波长的电磁辐射的输出。 该装置包括阳极，用于将IR感测层与阳极分离的空穴阻挡层，通过IR感测层与阳极分离的有机发光层和阴极。 空穴阻挡层确保当在阳极和阴极之间施加电位时，有机发光层仅在IR感测层被IR辐射照射时才产生电磁辐射。

公开(公告)号：US11296140B2

公开(公告)日：2022-04-05

申请号：US16605534

申请日：2018-04-13

申请人： Board of Regents, The University of Texas System ,  Nanoholdings LLC

发明人： Jesus I. Mejia-Silva ,  Manuel Quevedo-Lopez ,  Bruce E. Gnade ,  Carlos Hugo Avila Avendano ,  Bhabendra K. Pradhan

IPC分类号： G01T1/20 ,  H01L27/146 ,  H01L29/786 ,  H01L31/0392

摘要： A thin film radiation detection device includes a photosensitive p-n diode, a polysilicon thin film transistor (TFT), a radiation detection layer, and a substrate. The photosensitive p-n diode and the TFT are formed on the substrate. The radiation detection layer is formed above the substrate and receives multiple radiations. The photosensitive p-n diode receives a conversion output signal from the radiation detection layer and generates a detector signal. The TFT generates an amplified signal based on the detector signal.

公开(公告)号：US10651407B2

公开(公告)日：2020-05-12

申请号：US15758925

申请日：2016-09-09

申请人： University of Florida Research Foundation, Incorporated ,  Nanoholdings, LLC

发明人： Hyeonggeun Yu ,  Franky So ,  Do Young Kim ,  Bhabendra K. Pradhan

IPC分类号： H01L21/8234 ,  H01L51/10 ,  H01L51/05 ,  H01L27/144 ,  H01L29/08 ,  H01L29/417 ,  H01L27/28 ,  H01L51/00 ,  H01L51/42 ,  H01L51/44 ,  H01L27/30

摘要： A vertical field-effect transistor is provided, comprising a first electrode, a porous conductor layer formed from a layer of conductive material with a plurality of holes extending through the conductive material disposed therein, a dielectric layer between the first electrode and the porous conductor layer, a charge transport layer in contact with the porous conductor layer, and a second electrode electrically connected to the charge transport layer. A photoactive layer may be provided between the dielectric layer and the first electrode. A method of manufacturing a vertical field-effect transistor may also be provided, comprising forming a dielectric layer and depositing a conductor layer in contact with the dielectric layer, wherein one or more regions of the dielectric layer are masked during deposition such that the conductor layer includes a plurality of pores that extend through the conductor layer.

公开(公告)号：US20150171149A1

公开(公告)日：2015-06-18

申请号：US14568794

申请日：2014-12-12

申请人： University of Florida Research Foundation, Inc. ,  Nanoholdings, LLC

发明人： Franky So ,  Do Young Kim ,  Bhabendra K. Pradhan

IPC分类号： H01L27/32 ,  G02B23/12 ,  H01L31/028 ,  H01L31/032 ,  H01L31/0304

CPC分类号： H01L27/3234 ,  G02B23/12 ,  H01L27/288 ,  H01L27/305 ,  H01L27/3227 ,  H01L31/02322 ,  H01L31/028 ,  H01L31/0304 ,  H01L31/032 ,  H01L31/0324 ,  H01L31/035218 ,  H01L31/101 ,  H01L51/0053 ,  H01L51/4246 ,  H01L51/4293 ,  H01L2251/308 ,  Y02E10/549

摘要： Embodiments of the invention are directed to IR photodetectors with gain resulting from the positioning of a charge multiplication layer (CML) between the cathode and the IR sensitizing layer of the photodetector, where accumulating charge at the CML reduces the energy difference between the cathode and the CML to promote injection of electrons that result in gain for an electron only device. Other embodiments of the invention are directed to inclusion of the IR photodetectors with gain into an IR-to-visible up-conversion device that can be used in night vision and other applications.

摘要翻译： 本发明的实施例涉及具有由光电检测器的阴极和IR感光层之间的电荷倍增层（CML）的定位产生的增益的红外光电检测器，其中在CML处累积电荷降低了阴极和 CML促进注入电子，导致仅电子器件的增益。 本发明的其它实施例涉及将红外光电检测器的增益包括在可用于夜视和其他应用的IR到可见的上转换装置中。

公开(公告)号：US20140353502A1

公开(公告)日：2014-12-04

申请号：US14463546

申请日：2014-08-19

申请人： University of Florida Research Foundation, Inc. ,  Nanoholdings, LLC

发明人： Franky So ,  Do Young Kim ,  Bhabendra K. Pradhan

IPC分类号： H01L27/32 ,  H01L31/0352 ,  H01L31/032

CPC分类号： H01L27/3234 ,  G02B23/12 ,  H01L27/288 ,  H01L27/305 ,  H01L27/3227 ,  H01L31/02322 ,  H01L31/028 ,  H01L31/0304 ,  H01L31/032 ,  H01L31/0324 ,  H01L31/035218 ,  H01L31/101 ,  H01L51/0053 ,  H01L51/4246 ,  H01L51/4293 ,  H01L2251/308 ,  Y02E10/549

摘要： Embodiments of the invention are directed to IR photodetectors with gain resulting from the positioning of a charge multiplication layer (CML) between the cathode and the IR sensitizing layer of the photodetector, where accumulating charge at the CML reduces the energy difference between the cathode and the CML to promote injection of electrons that result in gain for an electron only device. Other embodiments of the invention are directed to inclusion of the IR photodetectors with gain into an IR-to-visible up-conversion device that can be used in night vision and other applications.