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公开(公告)号：US08545765B2
公开(公告)日：2013-10-01
申请号：US13450853
申请日：2012-04-19
IPC分类号： B01J19/08
CPC分类号： B01J19/088 , B01J2219/0811 , B01J2219/0813 , B01J2219/0815 , B01J2219/083 , B01J2219/0835 , B01J2219/0841 , B01J2219/0875 , B01J2219/0894 , H05H1/2406 , H05H2001/2412 , H05H2240/10
摘要： A first electrode, a second electrode and a third electrode are provided in a middle of a passage. The second electrode is provided on an upstream side of the first electrode, and the third electrode is provided on a downstream side of the first electrode. A connecting line connects the first electrode to a first pole of a pulsed power supply, and connects the second electrode and the third electrode to a second pole of the pulsed power supply. The first electrode crosses a first gas passing surface and occupies a part of the first gas passing surface. The second electrode and the third electrode cross a second gas passing surface and a third gas passing surface and occupy a part of the second gas passing surface and the third gas passing surface respectively.
摘要翻译： 第一电极，第二电极和第三电极设置在通路的中间。 第二电极设置在第一电极的上游侧，第三电极设置在第一电极的下游侧。 连接线将第一电极连接到脉冲电源的第一极，并将第二电极和第三电极连接到脉冲电源的第二极。 第一电极穿过第一气体通过表面并占据第一气体通过表面的一部分。 第二电极和第三电极与第二气体通过面和第三气体通过面交叉，分别占据第二气体通过面和第三气体通过面的一部分。
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公开(公告)号：US20120199286A1
公开(公告)日：2012-08-09
申请号：US13450853
申请日：2012-04-19
IPC分类号： C23F1/08
CPC分类号： B01J19/088 , B01J2219/0811 , B01J2219/0813 , B01J2219/0815 , B01J2219/083 , B01J2219/0835 , B01J2219/0841 , B01J2219/0875 , B01J2219/0894 , H05H1/2406 , H05H2001/2412 , H05H2240/10
摘要： A first electrode, a second electrode and a third electrode are provided in a middle of a passage. The second electrode is provided on an upstream side of the first electrode, and the third electrode is provided on a downstream side of the first electrode. A connecting line connects the first electrode to a first pole of a pulsed power supply, and connects the second electrode and the third electrode to a second pole of the pulsed power supply. The first electrode crosses a first gas passing surface and occupies a part of the first gas passing surface. The second electrode and the third electrode cross a second gas passing surface and a third gas passing surface and occupy a part of the second gas passing surface and the third gas passing surface respectively.
摘要翻译： 第一电极，第二电极和第三电极设置在通路的中间。 第二电极设置在第一电极的上游侧，第三电极设置在第一电极的下游侧。 连接线将第一电极连接到脉冲电源的第一极，并将第二电极和第三电极连接到脉冲电源的第二极。 第一电极穿过第一气体通过表面并占据第一气体通过表面的一部分。 第二电极和第三电极与第二气体通过面和第三气体通过面交叉，分别占据第二气体通过面和第三气体通过面的一部分。
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3.发明授权Static induction semiconductor device with a static induction schottky shorted structure 失效具有静态感应肖特基短路结构的静态感应半导体器件
公开(公告)号：US5545905A
公开(公告)日：1996-08-13
申请号：US229328
申请日：1994-04-18
IPC分类号： H01L29/74 , H01L29/739 , H01L29/80 , H01L27/095 , H01L31/112
CPC分类号： H01L29/7392
摘要： The present invention is to provide a Static Induction semiconductor device with a Static Induction Schottky shorted structure where the main electrode region is composed of regions of higher and lower impurity densities relative to each other, the main electrode forms an ohmic contact with the higher impurity density region and also forms a Schottky contact with a Static Induction Schottky shorted region of the lower impurity density region surrounded by tile higher impurity density region, and it is excellent in turn-off performance and easy to use, by substantially reducing tile minority carrier storage time, the fall time and the quantity of gate pull-out charges in order that charges may easily be pulled out from the cathode or source electrode as well as from the gate electrode at turn-off.
摘要翻译： 本发明提供一种具有静态感应肖特基短路结构的静态感应半导体器件，其中主电极区域由相对于彼此的较高和较低杂质浓度的区域组成，主电极形成具有较高杂质密度的欧姆接触 并且还与由较高杂质浓度区域包围的较低杂质浓度区域的静态感应肖特基短路区域形成肖特基接触，并且通过显着减少瓦片少数载流子储存时间，其截止性能优异，易于使用 ，下降时间和栅极引出电荷的量，以便电荷可以容易地从阴极或源极以及关断时从栅电极拉出。
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4.发明授权Reverse conducting thyristor with a planar-gate, buried-gate, or recessed-gate structure 失效具有平面栅极，掩埋栅极或凹入栅极结构的反向导通晶闸管
公开(公告)号：US5682044A
公开(公告)日：1997-10-28
申请号：US591420
申请日：1996-01-19
申请人： Takashige Tamamushi , Kimihiro Muraoka , Yoshiaki Ikeda , Keun Sam Lee , Naohiro Shimizu , Masashi Yura , Kinji Yoshioka
发明人： Takashige Tamamushi , Kimihiro Muraoka , Yoshiaki Ikeda , Keun Sam Lee , Naohiro Shimizu , Masashi Yura , Kinji Yoshioka
IPC分类号： H01L29/74 , H01L31/111
CPC分类号： H01L29/7416
摘要： The present invention provides a reverse conducting (RC) thyristor of a planar-gate structure for low-and-medium power use which is relatively simple in construction because of employing a planar structure for each of thyristor and diode regions, permits simultaneous formation of the both region and have high-speed performance and a RC thyristor of a buried-gate or recessed-gate structure which has a high breakdown voltage by the use of a buried-gate or recessed-gate structure, permits simultaneous formation of thyristor and diode regions and high-speed, high current switching performance, and the RC thyristor of the planar-gate structure has a construction which comprises an SI thyristor or miniaturized GTO of a planar-gate structure in the thyristor region and an SI diode of a planar structure in the diode region, the diode region having at its cathode side a Schottky contact between n emitters or diode cathode shorted region and the thyristor region having at its anode side an SI anode shorted structure formed by p.sup.+ anode layers, wave-shaped anode layers or anode n.sup.+ layers; in the case of a high breakdown device, an n buffer layer is added; similarly the RC thyristor of the buried-gate or recessed-gate structure has a construction which comprises an SI thyristor of a buried-gate or recessed-gate structure at the thyristor region and an SI diode of the buried or recessed structure.
摘要翻译： 本发明提供了一种用于中低功率使用的平面栅极结构的反向导通（RC）晶闸管，由于采用晶体管和二极管区域中的每一个的平面结构，其结构相对简单，允许同时形成 具有高速性能和通过使用掩埋栅极或凹入栅极结构具有高击穿电压的掩埋栅极或凹入栅极结构的RC晶闸管，允许同时形成晶闸管和二极管区域 和高速，高电流开关性能，并且平面栅极结构的RC晶闸管具有在晶闸管区域中包括SI晶闸管或平面栅极结构的小型化GTO以及平面结构的SI二极管的结构 二极管区域，二极管区域在其阴极侧具有n个发射极或二极管阴极短路区域之间的肖特基接触，并且在其阳极侧具有SI a的晶闸管区域 由p +阳极层，波形阳极层或阳极n +层形成的短路结构; 在高击穿装置的情况下，添加n缓冲层; 类似地，埋入栅极或凹入栅极结构的RC晶闸管具有包括在晶闸管区域处的掩埋栅极或凹入栅极结构的SI晶闸管和埋入或凹陷结构的SI二极管的结构。
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公开(公告)号：US08454899B2
公开(公告)日：2013-06-04
申请号：US13021968
申请日：2011-02-07
IPC分类号： B01J19/08
CPC分类号： C01B3/342 , B01J19/088 , B01J2219/0811 , B01J2219/0826 , B01J2219/0839 , B01J2219/0875 , B01J2219/0894 , C01B2203/0861 , H05H1/46 , H05H2245/121
摘要： A gas reforming device including: a flow passage forming body flow passage through which process gas flows; a cathode provided on a cross section of the flow passage; an anode provided apart from the cathode, and including a bar-like portion; and a pulse power supply that applies a pulse voltage between the cathode and the anode. The cathode includes: an opening array body that has at least a surface thereof made of an insulator, and has a planar structure in which openings through which the process gas passes are arrayed; and a grounding electrode provided on a peripheral portion of the flow passage. A tip end of the bar-like portion of the anode is located in an inside of the flow passage of the process gas, and is spaced apart from the opening array body in a direction parallel to a direction where the process gas flows.
摘要翻译： 一种气体重整装置，包括：流路形成体流路，工序气体流过该流路; 阴极，设置在流路的横截面上; 阳极，其设置成与阴极分离，并且包括棒状部分; 以及在阴极和阳极之间施加脉冲电压的脉冲电源。 阴极包括：开口阵列体，其至少具有由绝缘体制成的表面，并且具有其中排列有工艺气体通过的开口的平面结构; 以及设置在流路的周边部的接地电极。 阳极的棒状部分的尖端位于处理气体的流动通道的内侧，并且在与处理气体流动的方向平行的方向上与开口阵列体间隔开。
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公开(公告)号：US20100329940A1
公开(公告)日：2010-12-30
申请号：US12791157
申请日：2010-06-01
IPC分类号： H05H1/24
CPC分类号： B01J19/088 , B01J2219/0811 , B01J2219/0826 , B01J2219/083 , B01J2219/0833 , B01J2219/0841 , B01J2219/0843 , B01J2219/0883 , B01J2219/0892 , B01J2219/0894 , C01B3/342 , C01B3/38 , C01B3/382 , C01B3/386 , C01B13/11 , C01B2203/0233 , C01B2203/0244 , C01B2203/0261 , C01B2203/0861 , C01B2203/1041 , C01B2203/1052 , C01B2203/1058 , C01B2203/1064 , C01B2203/107 , C01B2203/1217 , C01B2203/1223 , C01B2203/1229 , C01B2203/1235 , C01B2203/1241 , C01B2203/1247 , H05H1/2406 , H05H2001/245
摘要： A plasma reactor includes a reaction container having an inlet 4 for a reforming target gas and an outlet for a reformed gas, a pair of electrodes that generate plasma and are disposed opposite to each other in an inner space of the reaction container, a pulse power supply that applies a voltage between the pair of electrodes, and a catalyst that promotes a reforming reaction of the reforming target gas, one electrode being a honeycomb electrode that is formed of a conductive ceramic and includes a plurality of cells that are defined by a partition wall, the other electrode being disposed opposite to an end face of the honeycomb electrode, the catalyst being supported on the partition wall of the honeycomb electrode, and a concave surface being formed in a center area of the end face of the honeycomb electrode that opposes the opposite electrode.
摘要翻译： 等离子体反应器包括反应容器，其具有用于重整目标气体的入口4和用于重整气体的出口，在反应容器的内部空间中产生等离子体并且彼此相对设置的一对电极，脉冲功率 在一对电极之间施加电压的电源以及促进重整对象气体的重整反应的催化剂，作为由导电性陶瓷形成的蜂窝电极的一个电极，包括由隔板 所述另一电极与所述蜂窝电极的端面相对设置，所述催化剂被支撑在所述蜂窝电极的隔壁上，并且所述凹面形成在所述蜂窝电极的与所述蜂窝电极的端面相对的端面的中心区域 相对电极。
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公开(公告)号：US20100221155A1
公开(公告)日：2010-09-02
申请号：US12084038
申请日：2006-10-24
摘要： An aseptization apparatus 1 includes a sealed container 11 forming an aseptization space 191, a nitrogen gas supplying system 12 for converting atmosphere of the aseptization space 191 into nitrogen atmosphere, an electrode pair 13 disposed in the aseptization space 191, a pulse power supply 14 for repeatedly applying an electric pulse to the electrode pair 13, and a mirror 15 for returning a short-wavelength ultraviolet ray going from inside of the aseptization space 191 to outside to inside of the aseptization space 191. In a state where an aseptization object substance ST1 is present in a plasma generation region 192 between the electrode pair 13, the aseptization apparatus 1 causes a pulse electric field generated by electric pulse application to the electrode pair 13, a nitrogen radical 195 contained in plasma generated in nitrogen atmosphere resulting from fine streamer discharge, and a short-wavelength ultraviolet ray 196 emitted by nitrogen atmosphere resulting from fine streamer discharge to act on bacteria for aseptization of the aseptization object substance ST1.
摘要翻译： 无菌化装置1包括形成无菌空间191的密闭容器11，将无菌空间191的气氛转换成氮气的氮气供给系统12，设置在无菌空间191内的电极对13，用于 向电极对13反复施加电脉冲，以及将从无菌化空间191的内部返回的短波长的紫外线返回到无菌化空间191的外部至内部的反射镜15.在无菌化物质ST1 存在于电极对13之间的等离子体产生区域192中，无菌化装置1使通过电脉冲施加到电极对13产生的脉冲电场，由氮气气氛中产生的等离子体中产生的细流光放电产生的氮自由基195 和由细流引起的氮气气体发射的短波长紫外线196 排出作用于细菌以对无菌物质ST1进行无菌化处理。
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公开(公告)号：US20080245478A1
公开(公告)日：2008-10-09
申请号：US12081913
申请日：2008-04-23
申请人： Eiki Hotta , Naohiro Shimizu , Yuichiro Imanishi
发明人： Eiki Hotta , Naohiro Shimizu , Yuichiro Imanishi
IPC分类号： C23F1/00 , C23C16/448
CPC分类号： H01J37/32706 , H01J37/32009 , H01J37/3233 , H05H1/2406 , H05H2001/2412
摘要： A surface treatment apparatus encompasses a gas introducing system configured to introduce a process gas from downstream end of a tubular treatment object; a vacuum evacuating system configured to evacuate the process gas from other end of the treatment object; an excited particle supplying system disposed at upstream side of the treatment object, configured to supply excited particles for inducing initial discharge in a main body of the treatment object; and a first main electrode and a second main electrode disposed oppositely to each other, defining a treating region of the treatment object as a main plasma generating region disposed therebetween, wherein the excited particle supplying system is driven at least until generation of main plasma, and main pulse of duty ratio of 10−7 to 10−1 is applied across the first main electrode and second main electrode, to generate a non-thermal equilibrium plasma flow in the inside of the treatment object, and thereby an inner surface of the treatment object is treated.
摘要翻译： 表面处理装置包括：气体导入系统，其构造成从管状处理对象的下游端引入处理气体; 真空排气系统，其构造成从处理对象的另一端抽出处理气体; 设置在处理对象的上游侧的激发粒子供给系统，被配置为在被处理体的主体内供给用于引发初始排出的激发粒子; 以及相对设置的第一主电极和第二主电极，将处理对象的处理区域设定为设置在其间的主等离子体产生区域，其中所述激发粒子供给系统至少被驱动至主等离子体的产生，以及 在第一主电极和第二主电极上施加10 -7至10 -6的主脉冲占空比，以在第一主电极和第二主电极中产生非热平衡等离子体流 在处理对象内部，从而处理对象的内表面。
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公开(公告)号：US20100212620A1
公开(公告)日：2010-08-26
申请号：US12702389
申请日：2010-02-09
申请人： Naohiro SHIMIZU
发明人： Naohiro SHIMIZU
IPC分类号： F02P23/00
摘要： To provide a plasma igniter capable of generating a discharge such as a pulse streamer discharge in a large region even by application of a low voltage, implementing powerful ignition by pulse voltage application in two or more stages, improving an air-fuel ratio (A/F), and reducing a CO2 emission amount.A plasma igniter includes an igniter part having a combustion chamber, and a discharge part arranged in such a manner that its discharge tip end is exposed to the combustion chamber. The discharge tip end has a column-shaped anode, an annular cathode arranged to be a predetermined interval away from an anode tip end part, and an annular floating electrode arranged between the anode tip end part and the cathode.
摘要翻译： 为了提供能够通过施加低电压在大区域中产生诸如脉冲流光放电的等离子体点火器，通过在两个或多个阶段中施加脉冲电压实现强力点火，提高空燃比（A / F），并减少二氧化碳排放量。 等离子体点火器包括具有燃烧室的点火器部分和以其排放尖端暴露于燃烧室的方式布置的排出部分。 放电尖端具有柱状阳极，布置成距离阳极尖端部分预定间隔的环形阴极，以及布置在阳极前端部分和阴极之间的环形浮动电极。
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公开(公告)号：US20080193330A1
公开(公告)日：2008-08-14
申请号：US11826957
申请日：2007-07-19
申请人： Eiki Hotta , Naohiro Shimizu , Yuichiro Imanishi
发明人： Eiki Hotta , Naohiro Shimizu , Yuichiro Imanishi
IPC分类号： A61L2/14
CPC分类号： H01J37/3244 , H01J37/32009
摘要： A surface treatment apparatus encompasses a gas introducing system configured to introduce a process gas from one end of a tubular treatment object; a vacuum evacuating system configured to evacuate the process gas from other end of the treatment object; an excited particle supplying system disposed at the gas supply upstream side to the treatment object, configured to supply excited particles for inducing initial discharge in a main body of the treatment object; and a first main electrode and a second main electrode disposed oppositely to each other, defining a treating region of the treatment object as a main plasma generating region disposed therebetween, wherein the excited particle supplying system is driven at least until generation of main plasma, and main pulse of duty ratio of 10−7 to 10−1 is applied between the first main electrode and second main electrode, to generate a non-thermal equilibrium plasma flow inside the treatment object, and thereby an inner surface of the treatment object is treated.
摘要翻译： 表面处理装置包括：气体导入系统，其构造成从管状处理物体的一端引入处理气体; 真空排气系统，其构造成从处理对象的另一端抽出处理气体; 设置在处理对象的气体供给上游侧的激发粒子供给系统，被配置为在被处理体的主体中供给用于引发初始排出的激发粒子; 以及相对设置的第一主电极和第二主电极，将处理对象的处理区域设定为设置在其间的主等离子体产生区域，其中所述激发粒子供给系统至少被驱动至主等离子体的产生，以及 在第一主电极和第二主电极之间施加占空比为10 -7至10 -1的主脉冲，以在第一主电极和第二主电极之间产生非热平衡等离子体流 处理对象，从而处理对象的内表面。
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