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公开(公告)号：US20240247986A1
公开(公告)日：2024-07-25
申请号：US18597341
申请日：2024-03-06
Applicant: NextInput, Inc.
Inventor： Julius Minglin Tsai , Ryan Diestelhorst , Dan Krstyen Benjamin
CPC classification number: G01L1/18 , B81B3/0021 , B81C1/00595 , G01L1/26 , B81B2203/0127 , B81C2201/014
Abstract: An example microelectromechanical system (MEMS) force sensor is described herein. The MEMS force sensor can include a sensor die configured to receive an applied force. The sensor die can include a first substrate and a second substrate, where a cavity is formed in the first substrate and where at least a portion of the second substrate defines a deformable membrane. The MEMS force sensor can also include an etch stop layer arranged between the first substrate and the second substrate, and a sensing element arranged on a surface of the second substrate. The sensing element can be configured to convert a strain on the surface of the membrane substrate to an analog electrical signal that is proportional to the strain.
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公开(公告)号：US11946817B2
公开(公告)日：2024-04-02
申请号：US17676477
申请日：2022-02-21
Applicant: NEXTINPUT, INC.
Inventor： Ali Foughi , Ryan Diestelhorst , Dan Benjamin , Julius Minglin Tsai , Michael Dueweke
CPC classification number: G01L1/18 , B81B7/02 , B81C1/00246 , G01L1/14 , G01L1/16 , B81B2201/0264 , B81B2203/0127 , B81B2203/0315 , B81B2207/015 , B81B2207/07 , B81C2201/013 , B81C2203/0109 , B81C2203/0714 , B81C2203/0728
Abstract: In one embodiment, a ruggedized wafer level microelectromechanical (“MEMS”) force sensor includes a base and a cap. The MEMS force sensor includes a flexible membrane and a sensing element. The sensing element is electrically connected to integrated complementary metal-oxide-semiconductor (“CMOS”) circuitry provided on the same substrate as the sensing element. The CMOS circuitry can be configured to amplify, digitize, calibrate, store, and/or communicate force values through electrical terminals to external circuitry.
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公开(公告)号：US11874183B2
公开(公告)日：2024-01-16
申请号：US17615208
申请日：2020-06-01
Applicant: NEXTINPUT, INC.
Inventor： Michael Dueweke , Allan Liu , Dan Benjamin
IPC: G01L5/00
CPC classification number: G01L5/0028
Abstract: Described herein is a method and system for testing a force or strain sensor in a continuous fashion. The method employs a sensor, a test fixture, a load cell, a mechanical actuator and tester hardware and software to simultaneously record signal outputs from the sensor and load cell as functions of time. The method provides time synchronization events for recording data streams between, for example, a linear ramp of the force on, or displacement of, the sensor and for extracting performance characteristics from the data in post-test processing.
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公开(公告)号：US20220268648A1
公开(公告)日：2022-08-25
申请号：US17676477
申请日：2022-02-21
Applicant: NEXTINPUT, INC.
Inventor： Ali Foughi , Ryan Diestelhorst , Dan Benjamin , Julius Minglin Tsai , Michael Dueweke
Abstract: In one embodiment, a ruggedized wafer level microelectromechanical (“MEMS”) force sensor includes a base and a cap. The MEMS force sensor includes a flexible membrane and a sensing element. The sensing element is electrically connected to integrated complementary metal-oxide-semiconductor (“CMOS”) circuitry provided on the same substrate as the sensing element. The CMOS circuitry can be configured to amplify, digitize, calibrate, store, and/or communicate force values through electrical terminals to external circuitry.
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5.发明授权公开(公告)号：US11221263B2
公开(公告)日：2022-01-11
申请号：US16632795
申请日：2018-07-19
Applicant: NEXTINPUT, INC.
Inventor： Julius Minglin Tsai , Dan Benjamin
IPC: G01L1/22 , H01L41/053 , H01L41/113 , G01L1/16 , B81B3/00 , B81B7/00 , G01L1/18
Abstract: Described herein is a ruggedized microelectromechanical (“MEMS”) force sensor including a sensor die and a strain transfer layer. The MEMS force sensor employs piezoresistive or piezoelectric strain gauges for strain sensing where the strain is transferred through the strain transfer layer, which is disposed on the top or bottom side of the sensor die. In the case of the top side strain transfer layer, the MEMS force sensor includes mechanical anchors. In the case of the bottom side strain transfer layer, the protection layer is added on the top side of the sensor die for bond wire protection.
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Patent Agency Ranking
6.发明申请公开(公告)号：US20200378845A1
公开(公告)日：2020-12-03
申请号：US16634469
申请日：2018-07-27
Applicant: NEXTINPUT, INC.
Inventor： Albert BERGEMONT , Julius Minglin TSAI
IPC: G01L1/16 , G01L1/18 , H01L41/113
Abstract: Described herein is a ruggedized microelectromechanical (“MEMS”) force sensor. The sensor employs piezoresistive or piezoelectric sensing elements for force sensing where the force is converted to strain and converted to electrical signal. In one aspect, both the piezoresistive and the piezoelectric sensing elements are formed on one substrate and later bonded to another substrate on which the integrated circuitry is formed. In another aspet, the piezoelectric sensing element is formed on one substrate and later bonded to another substrate on which both the piezoresistive sensing element and the integrated circuitry are formed.
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公开(公告)号：US10775940B2
公开(公告)日：2020-09-15
申请号：US15492127
申请日：2017-04-20
Applicant: NextInput, Inc.
Inventor： Ian Campbell , Ryan Diestelhorst
Abstract: An example force-sensitive electronic device is described herein. The device can include a device body, a touch surface bonded to the device body in a bonded region that is arranged along a peripheral edge of the touch surface, and a plurality of force sensors that are arranged between the device body and the touch surface. Each of the plurality of force sensors can be spaced apart from the bonded region.
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公开(公告)号：US20160363490A1
公开(公告)日：2016-12-15
申请号：US15178976
申请日：2016-06-10
Applicant: NextInput, Inc.
Inventor： Ian Campbell , Ryan Diestelhorst , Dan Benjamin , Steven S. Nasiri
IPC: G01L1/18
Abstract: An example MEMS force sensor is described herein. The MEMS force sensor can include a cap for receiving an applied force and a sensor bonded to the cap. A trench and a cavity can be formed in the sensor. The trench can be formed along at least a portion of a peripheral edge of the sensor. The cavity can define an outer wall and a flexible sensing element, and the outer wall can be arranged between the trench and the cavity. The cavity can be sealed between the cap and the sensor. The sensor can also include a sensor element formed on the flexible sensing element. The sensor element can change an electrical characteristic in response to deflection of the flexible sensing element.
Abstract translation: 这里描述了示例性MEMS力传感器。 MEMS力传感器可以包括用于接收施加的力的盖和结合到盖的传感器。 可以在传感器中形成沟槽和空腔。 沟槽可以沿着传感器的周缘的至少一部分形成。 空腔可以限定外壁和柔性感测元件，并且外壁可以布置在沟槽和空腔之间。 空腔可以密封在盖和传感器之间。 传感器还可以包括形成在柔性感测元件上的传感器元件。 传感器元件可以响应于柔性传感元件的偏转而改变电特性。
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公开(公告)号：US20160332866A1
公开(公告)日：2016-11-17
申请号：US15111044
申请日：2015-01-13
Applicant: NextInput, Inc.
Inventor： Amnon Brosh , Ryan Diestelhorst , Steven Nasiri
IPC: B81B3/00
CPC classification number: B81B3/0056 , B81B2201/0264 , B81B2201/0292 , B81C1/00626 , G01L1/18 , G01L1/205 , G01L9/0047 , G01L9/0048
Abstract: Described herein is a miniaturized and ruggedized wafer level MEMS force sensor composed of a base and a cap. The sensor employs multiple flexible membranes, a mechanical overload stop, a retaining wall, and piezoresistive strain gauges.
Abstract translation: 这里描述的是由基座和盖组成的小型化和加固的晶片级MEMS力传感器。 传感器采用多个柔性膜，机械过载停止，挡土墙和压阻应变计。
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公开(公告)号：US11898918B2
公开(公告)日：2024-02-13
申请号：US18103465
申请日：2023-01-30
Applicant: NextInput, Inc.
Inventor： Julius Minglin Tsai , Dan Benjamin
CPC classification number: G01L1/2281 , G01L1/16 , G01L1/18
Abstract: MEMS force sensors for providing temperature coefficient of offset (TCO) compensation are described herein. An example MEMS force sensor can include a TCO compensation layer to minimize the TCO of the force sensor. The bottom side of the force sensor can be electrically and mechanically mounted on a package substrate while the TCO compensation layer is disposed on the top side of the sensor. It is shown the TCO can be reduced to zero with the appropriate combination of Young's modulus, thickness, and/or thermal coefficient of expansion (TCE) of the TCO compensation layer.
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