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公开(公告)号：US07368741B2
公开(公告)日：2008-05-06
申请号：US11107535
申请日：2005-04-14
申请人： Stephan T. Melnychuk , William N. Partlo , Igor V. Fomenkov , I. Roger Oliver , Richard M. Ness , Norbert R. Bowering , Oleh Khodykin , Curtis L. Rettig , Gerry M. Blumenstock , Timothy S. Dyer , Rodney D. Simmons , Jerzy R. Hoffman , R. Mark Johnson
发明人： Stephan T. Melnychuk , William N. Partlo , Igor V. Fomenkov , I. Roger Oliver , Richard M. Ness , Norbert R. Bowering , Oleh Khodykin , Curtis L. Rettig , Gerry M. Blumenstock , Timothy S. Dyer , Rodney D. Simmons , Jerzy R. Hoffman , R. Mark Johnson
IPC分类号： H01J35/20
CPC分类号： H05G2/003 , B82Y10/00 , G03F7/70033 , G03F7/70166 , G03F7/70175 , G03F7/70916 , H01S3/005 , H05G2/005 , H05G2/008 , H05H1/06
摘要： The present invention provides a reliable, high-repetition rate, production line compatible high energy photon source. A very hot plasma containing an active material is produced in vacuum chamber. The active material is an atomic element having an emission line within a desired extreme ultraviolet (EUV) range. A pulse power source comprising a charging capacitor and a magnetic compression circuit comprising a pulse transformer, provides electrical pulses having sufficient energy and electrical potential sufficient to produce the EUV light at an intermediate focus at rates in excess of 5 Watts. In preferred embodiments designed by Applicants in-band, EUV light energy at the intermediate focus is 45 Watts extendable to 105.8 Watts.
摘要翻译： 本发明提供了一种可靠，高重复率的生产线兼容高能光子源。 在真空室中产生含有活性物质的非常热的等离子体。 活性物质是具有期望的极紫外（EUV）范围内的发射线的原子元素。 包括充电电容器和包括脉冲变压器的磁压缩电路的脉冲电源提供电脉冲，其具有足够的能量和电势，足以以超过5瓦的速率在中间焦点处产生EUV光。 在由申请人带内设计的优选实施例中，中间焦点处的EUV光能量可以45瓦可扩展到105.8瓦特。
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公开(公告)号：US08514486B2
公开(公告)日：2013-08-20
申请号：US12927012
申请日：2010-11-03
IPC分类号： H01S3/00
CPC分类号： H01S3/105 , G03F7/70033 , H01S3/005 , H01S3/115 , H01S3/2232 , H01S3/225 , H01S3/2325 , H01S2301/02 , H05G2/003 , H05G2/008
摘要： A device comprising a laser source producing a continuous output on a beam path and an amplifier is disclosed. The device further includes a partially transmissive, partially reflective optic disposed on said beam path between said laser source and said amplifier. The device further includes a droplet generator positioned to deliver a droplet moving on a path intersecting said beam path, the droplet reflecting light to establish an optical cavity with said optic.
摘要翻译： 公开了一种包括在光束路径上产生连续输出的激光源和放大器的装置。 该装置还包括设置在所述激光源和所述放大器之间的所述光束路径上的部分透射的部分反射光学元件。 该装置还包括液滴发生器，其定位成输送在与所述光束路径相交的路径上移动的液滴，液滴反射光以与所述光学器件建立光学腔。
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公开(公告)号：US20110058588A1
公开(公告)日：2011-03-10
申请号：US12927012
申请日：2010-11-03
CPC分类号： H01S3/105 , G03F7/70033 , H01S3/005 , H01S3/115 , H01S3/2232 , H01S3/225 , H01S3/2325 , H01S2301/02 , H05G2/003 , H05G2/008
摘要： A device is described herein which may comprise an oscillator having an oscillator cavity length, L0, and defining an oscillator path; and a multi-pass optical amplifier coupled with the oscillator to establish a combined optical cavity including the oscillator path, the combined cavity having a length, Lcombined, where Lcombined=(N+x)*L0, where “N” is an integer and “x” is a number between 0.4 and 0.6.
摘要翻译： 本文描述了一种器件，其可以包括具有振荡器腔长度L0并且限定振荡器路径的振荡器; 和与所述振荡器耦合的多通光放大器以建立包括所述振荡器路径的组合光腔，所述组合腔具有长度L组合，其中L组合=（N + x）* L0，其中“N”是整数， “x”是介于0.4和0.6之间的数字。
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4.发明授权Systems and methods for target material delivery in a laser produced plasma EUV light source 有权用于激光产生等离子体EUV光源的靶材料输送的系统和方法公开(公告)号：US07872245B2
公开(公告)日：2011-01-18
申请号：US12214736
申请日：2008-06-19
申请人： Georgiy O. Vaschenko , Alexander N. Bykanov , Norbert R. Bowering , David C. Brandt , Alexander I. Ershov , Rodney D. Simmons , Oleh V. Khodykin , Igor V. Fomenkov
发明人： Georgiy O. Vaschenko , Alexander N. Bykanov , Norbert R. Bowering , David C. Brandt , Alexander I. Ershov , Rodney D. Simmons , Oleh V. Khodykin , Igor V. Fomenkov
摘要： Devices are disclosed herein which may comprise an EUV reflective optic having a surface of revolution that defines a rotation axis and a circular periphery. The optic may be positioned to incline the axis at a nonzero angle relative to a horizontal plane, and to establish a vertical projection of the periphery in the horizontal plane with the periphery projection bounding a region in the horizontal plane. The device may further comprise a system delivering target material, the system having a target material release point that is located in the horizontal plane and outside the region, bounded by the periphery projection and a system generating a laser beam for irradiating the target material to generate an EUV emission.
摘要翻译： 本文公开的装置可以包括具有限定旋转轴线和圆形周边的旋转表面的EUV反射光学元件。 光学元件可以被定位成相对于水平面以非零角度倾斜轴，并且在水平面中建立周边的垂直投影，其中周边突起界定水平面中的一个区域。 该装置还可以包括传送目标材料的系统，该系统具有位于水平面内的区域外的外围突起的边界材料释放点和产生用于照射目标材料产生的激光束的系统 EUV排放。
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5.发明授权Systems for protecting internal components of an EUV light source from plasma-generated debris 有权用于保护EUV光源的内部部件免受等离子体产生的碎片的系统公开(公告)号：US07109503B1
公开(公告)日：2006-09-19
申请号：US11067099
申请日：2005-02-25
申请人： Norbert R. Bowering , Bjorn A. M. Hansson , Alexander N. Bykanov , Oleh Khodykin , Alexander I. Ershov , William N. Partlo
发明人： Norbert R. Bowering , Bjorn A. M. Hansson , Alexander N. Bykanov , Oleh Khodykin , Alexander I. Ershov , William N. Partlo
IPC分类号： G01J1/00
CPC分类号： G03F7/70925 , B82Y10/00 , G03F7/70033 , G03F7/70166 , G03F7/70916 , G21K2201/06 , H05G2/001
摘要： Systems and methods are disclosed for protecting an EUV light source plasma production chamber optical element surface from debris generated by plasma formation. In one aspect of an embodiment of the present invention, a shield is disclosed which comprises at least one hollow tube positioned between the optical element and a plasma formation site. The tube is oriented to capture debris while allowing light to pass through the tube's lumen via reflection at relatively small angles of grazing incidence. In another aspect of an embodiment of the present invention, a shield is disclosed which is heated to a temperature sufficient to remove one or more species of debris material that has deposited on the shield. In yet another aspect of an embodiment of the present invention, a system is disclosed which a shield is moved from a light source plasma chamber to a cleaning chamber where the shield is cleaned.
摘要翻译： 公开了用于保护EUV光源等离子体生产室光学元件表面免受等离子体形成产生的碎片的系统和方法。 在本发明的实施例的一个方面，公开了一种屏蔽件，其包括位于光学元件和等离子体形成部位之间的至少一个中空管。 管被定向以捕获碎片，同时允许光以相对较小的掠入射角度的反射通过管的内腔。 在本发明的一个实施例的另一方面，公开了一种屏蔽件，其被加热到足以去除沉积在屏蔽上的一种或多种碎屑材料的温度。 在本发明的一个实施例的另一方面，公开了一种系统，其将屏蔽件从光源等离子体室移动到清洁室，其中屏蔽件被清洁。
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6.发明申请Systems and methods for target material delivery in a laser produced plasma EUV light source 有权用于激光产生等离子体EUV光源的靶材料输送的系统和方法公开(公告)号：US20090230326A1
公开(公告)日：2009-09-17
申请号：US12214736
申请日：2008-06-19
申请人： Georgiy O. Vaschenko , Alexander N. Bykanov , Norbert R. Bowering , David C. Brandt , Alexander I. Ershov , Rodney D. Simmons , Oleh V. Khodykin , Igor V. Fomenkov
发明人： Georgiy O. Vaschenko , Alexander N. Bykanov , Norbert R. Bowering , David C. Brandt , Alexander I. Ershov , Rodney D. Simmons , Oleh V. Khodykin , Igor V. Fomenkov
IPC分类号： G21K5/00
摘要： Devices are disclosed herein which may comprise an EUV reflective optic having a surface of revolution that defines a rotation axis and a circular periphery. The optic may be positioned to incline the axis at a nonzero angle relative to a horizontal plane, and to establish a vertical projection of the periphery in the horizontal plane with the periphery projection bounding a region in the horizontal plane. The device may further comprise a system delivering target material, the system having a target material release point that is located in the horizontal plane and outside the region, bounded by the periphery projection and a system generating a laser beam for irradiating the target material to generate an EUV emission.
摘要翻译： 本文公开的装置可以包括具有限定旋转轴线和圆形周边的旋转表面的EUV反射光学元件。 光学元件可以被定位成相对于水平面以非零角度倾斜轴，并且在水平面中建立周边的垂直投影，其中周边突起界定水平面中的一个区域。 该装置还可以包括传送目标材料的系统，该系统具有位于水平面内的区域外的外围突起的边界材料释放点和产生用于照射目标材料产生的激光束的系统 EUV排放。
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7.发明申请EUV light source components and methods for producing, using and refurbishing same 有权EUV光源组件及其制造，使用和翻新方法公开(公告)号：US20090159808A1
公开(公告)日：2009-06-25
申请号：US12004871
申请日：2007-12-20
CPC分类号： G02B5/0891 , B82Y10/00 , G01J1/429 , G03F7/70941 , G03F7/70958 , G03F7/70975 , G21K2201/061 , G21K2201/067 , H05G2/003 , H05G2/005 , H05G2/008
摘要： A method is disclosed for in-situ monitoring of an EUV mirror to determine a degree of optical degradation. The method may comprise the steps/acts of irradiating at least a portion of the mirror with light having a wavelength outside the EUV spectrum, measuring at least a portion of the light after the light has reflected from the mirror, and using the measurement and a pre-determined relationship between mirror degradation and light reflectivity to estimate a degree of multi-layer mirror degradation. Also disclosed is a method for preparing a near-normal incidence, EUV mirror which may comprise the steps/acts of providing a metallic substrate, diamond turning a surface of the substrate, depositing at least one intermediate material overlying the surface using a physical vapor deposition technique, and depositing a multi-layer mirror coating overlying the intermediate material.
摘要翻译： 公开了一种用于EUV反射镜的原位监测以确定光学降解程度的方法。 该方法可以包括用具有波长在EUV谱以外的波长的光照射反射镜的至少一部分的步骤/动作，在光已经从反射镜反射之后测量光的至少一部分，并且使用该测量和 镜面退化和光反射率之间的预定关系，以估计多层镜面退化的程度。 还公开了一种用于制备近似法线入射的EUV反射镜的方法，该反射镜可以包括提供金属基底的步骤/动作，转动基底的表面的金刚石，使用物理气相沉积沉积覆盖表面的至少一种中间材料 技术，并沉积覆盖中间材料的多层镜面涂层。
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公开(公告)号：US20110075253A1
公开(公告)日：2011-03-31
申请号：US12927063
申请日：2010-11-05
CPC分类号： G03F7/7015 , G02B5/0891 , G02B7/182 , G21K1/062 , Y10T29/49982
摘要： In a first aspect, a method of fabricating an EUV light source mirror is disclosed which may comprise the acts/steps of providing a plurality of discrete substrates; coating each substrate with a respective multilayer coating; securing the coated substrates in an arrangement wherein each coated substrate is oriented to a common focal point; and thereafter polishing at least one of the multilayer coatings. In another aspect, an optic for use with EUV light is disclosed which may comprise a substrate; a smoothing layer selected from the group of materials consisting of Si, C, Si3N4, B4C, SiC and Cr, the smoothing layer material being deposited using highly energetic deposition conditions and a multilayer dielectric coating. In another aspect, a corrosion resistant, multilayer coating for an EUV mirror may comprise alternating layers of Si and a compound material having nitrogen and a 5th period transition metal.
摘要翻译： 在第一方面，公开了一种制造EUV光源反射镜的方法，其可以包括提供多个离散基板的动作/步骤; 用相应的多层涂层涂覆每个基材; 将涂覆的基底固定在其中每个涂覆的基底被定向到公共焦点的布置中; 然后抛光至少一个多层涂层。 在另一方面，公开了一种用于EUV光的光学元件，其可以包括基底; 选自由Si，C，Si 3 N 4，B 4 C，SiC和Cr组成的材料组中的平滑层，使用高能沉积条件沉积的平滑层材料和多层介电涂层。 另一方面，用于EUV反射镜的耐腐蚀多层涂层可以包括交替的Si层和具有氮和第五段过渡金属的复合材料。
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公开(公告)号：US20080043321A1
公开(公告)日：2008-02-21
申请号：US11505177
申请日：2006-08-16
IPC分类号： G02B5/08
CPC分类号： G03F7/7015 , G02B5/0891 , G02B7/182 , G21K1/062 , Y10T29/49982
摘要： In a first aspect, a method of fabricating an EUV light source mirror is disclosed which may comprise the acts/steps of providing a plurality of discrete substrates; coating each substrate with a respective multilayer coating; securing the coated substrates in an arrangement wherein each coated substrate is oriented to a common focal point; and thereafter polishing at least one of the multilayer coatings. In another aspect, an optic for use with EUV light is disclosed which may comprise a substrate; a smoothing layer selected from the group of materials consisting of Si, C, Si3N4, B4C, SiC and Cr, the smoothing layer material being deposited using highly energetic deposition conditions and a multilayer dielectric coating. In another aspect, a corrosion resistant, multilayer coating for an EUV mirror may comprise alternating layers of Si and a compound material having nitrogen and a 5th period transition metal.
摘要翻译： 在第一方面，公开了一种制造EUV光源反射镜的方法，其可以包括提供多个离散基板的动作/步骤; 用相应的多层涂层涂覆每个基材; 将涂覆的基底固定在其中每个涂覆的基底被定向到公共焦点的布置中; 然后抛光至少一个多层涂层。 在另一方面，公开了一种用于EUV光的光学元件，其可以包括基底; 选自由Si，C，Si 3 N 4，B 4 C，SiC和Cr组成的材料组中的平滑层， 使用高能沉积条件沉积的平滑层材料和多层介电涂层。 另一方面，用于EUV反射镜的耐腐蚀多层涂层可以包括交替的Si层和具有氮和第五阶段过渡金属的复合材料。
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公开(公告)号：US08598549B2
公开(公告)日：2013-12-03
申请号：US12927063
申请日：2010-11-05
IPC分类号： H05G2/00
CPC分类号： G03F7/7015 , G02B5/0891 , G02B7/182 , G21K1/062 , Y10T29/49982
摘要： In a first aspect, a method of fabricating an EUV light source mirror is disclosed which may comprise the acts/steps of providing a plurality of discrete substrates; coating each substrate with a respective multilayer coating; securing the coated substrates in an arrangement wherein each coated substrate is oriented to a common focal point; and thereafter polishing at least one of the multilayer coatings. In another aspect, an optic for use with EUV light is disclosed which may comprise a substrate; a smoothing layer selected from the group of materials consisting of Si, C, Si3N4, B4C, SiC and Cr, the smoothing layer material being deposited using highly energetic deposition conditions and a multilayer dielectric coating. In another aspect, a corrosion resistant, multilayer coating for an EUV mirror may comprise alternating layers of Si and a compound material having nitrogen and a 5th period transition metal.
摘要翻译： 在第一方面，公开了一种制造EUV光源反射镜的方法，其可以包括提供多个离散基板的动作/步骤; 用相应的多层涂层涂覆每个基材; 将涂覆的基底固定在其中每个涂覆的基底被定向到公共焦点的布置中; 然后抛光至少一个多层涂层。 在另一方面，公开了一种用于EUV光的光学元件，其可以包括基底; 选自由Si，C，Si 3 N 4，B 4 C，SiC和Cr组成的材料组中的平滑层，使用高能沉积条件沉积的平滑层材料和多层介电涂层。 另一方面，用于EUV反射镜的耐腐蚀多层涂层可以包括交替的Si层和具有氮和第五段过渡金属的复合材料。
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