Resin composition, molded article and lamp reflector
    1.
    发明授权
    Resin composition, molded article and lamp reflector 失效
    树脂组合物,模制品和灯反射器

    公开(公告)号:US5474853A

    公开(公告)日:1995-12-12

    申请号:US413436

    申请日:1995-03-30

    Abstract: A resin composition comprising predetermined amounts of a specific polyamide resin (A), a modified polyphenylene ether resin (B), a fibrous inorganic filler (C) having an average fiber-diameter of 10 .mu.m or less, a powdery inorganic filler (D) having an average particle diameter of 10 .mu.m or less, an epoxy resin (E) and a copper compound (F-1) and/or a powdery phenolic resin (F-2); a molded article formed from the resin composition; and a lamp reflector formed from the molded article. The molded article formed from the above resin composition can give an automotive lamp reflector excellent in resistance to heat generated when a lamp is on, rigidity at high temperatures, clear reflection performance on a mold article surface, adhesion to deposited aluminum and adhesion to a primer coating composition.

    Abstract translation: 一种树脂组合物,其包含预定量的特定聚酰胺树脂(A),改性聚苯醚树脂(B),平均纤维直径为10μm以下的纤维无机填料(C),粉末状无机填料(D ),环氧树脂(E)和铜化合物(F-1)和/或粉末状酚醛树脂(F-2)的平均粒径为10μm以下。 由树脂组合物形成的模制品; 以及由模制品形成的灯反射器。 由上述树脂组合物形成的模塑制品可以提供一种汽车灯反射器,其在灯亮时产生的耐热性优异,在高温下具有刚性,在模具制品表面上具有清晰的反射性能,对沉积的铝的粘附性以及对底漆的粘附性 涂料组合物。

    Semiconductor memory device and semiconductor integrated circuit device
    4.
    发明申请
    Semiconductor memory device and semiconductor integrated circuit device 有权
    半导体存储器件和半导体集成电路器件

    公开(公告)号:US20050052925A1

    公开(公告)日:2005-03-10

    申请号:US10927052

    申请日:2004-08-27

    CPC classification number: G11C11/413 G11C5/14 G11C7/22 G11C8/08 G11C2207/2227

    Abstract: A leakage current of the MOS transistor of a power control section at a standby time is drastically reduced and the reduction of the consumption power is achieved. A memory module is provided with power control sections. When either of the memory mats is not selected, the power control sections stop the power supply voltage to a non-selected memory mat, a word driver, an input-output circuit, a control circuit and an output circuit. At the standby time of the memory module, the power control section stops a power supply to power control sections, a control circuit, a predecoder circuit, and an input circuit. In this manner, the leakage current of the MOS transistor of the power control sections at the standby time can be drastically reduced.

    Abstract translation: 功率控制部的MOS晶体管的待机时的漏电流急剧下降,能够实现消耗功率的降低。 存储器模块具有功率控制部分。 当没有选择任何存储器垫时,功率控制部分将电源电压停止到未选择的存储器垫,字驱动器,输入输出电路,控制电路和输出电路。 在存储器模块的待机时,功率控制部分停止对功率控制部分,控制电路,预解码器电路和输入电路的电源。 以这种方式,可以显着降低在待机时功率控制部分的MOS晶体管的漏电流。

    Polyamide resin composition
    5.
    发明授权
    Polyamide resin composition 失效
    聚酰胺树脂组合物

    公开(公告)号:US5412013A

    公开(公告)日:1995-05-02

    申请号:US93874

    申请日:1993-07-20

    CPC classification number: C08K3/16 C08K3/04 C08K3/22 C08L77/00

    Abstract: There is disclosed a polyamide resin composition comprising (A) 100 parts by weight of a polyamide (a) composed mainly of a xylylenediamine component and an .alpha.,.omega.-straight chain asphaltic dibasic acid component, or a combination of the polyamide (a) and polyamide 66, (B) 1 to 15 parts by weight of polyamide 12, (C) 0.01 to 5 parts by weight (in terms of copper) of a copper compound, (D) 1 to 15 parts by weight of carbon black, and (E) an alkali metal halide of such an amount that the number of halogen atoms of the alkali metal halide is 0.3 to 4 per one copper atom of the above copper compound. Said polyamide resin composition has an excellent weather resistance, moldability, and mechanical properties, and can be injection-molded.

    Abstract translation: 公开了一种聚酰胺树脂组合物,其包含(A)100重量份主要由苯二甲胺组分和α,ω-直链沥青二元酸组分组成的聚酰胺(a)或聚酰胺(a)和 聚酰胺66,(B)1〜15重量份的聚酰胺12,(C)0.01〜5重量份(以铜计)的铜化合物,(D)1〜15重量份的炭黑,以及 (E)碱金属卤化物的量为使上述铜化合物的每一个铜原子的碱金属卤化物的卤素原子数为0.3〜4的碱金属卤化物。 所述聚酰胺树脂组合物具有优异的耐候性,成型性和机械性能,并且可以注射成型。

    Pneumatic tire
    6.
    发明授权
    Pneumatic tire 有权
    气动轮胎

    公开(公告)号:US08037910B2

    公开(公告)日:2011-10-18

    申请号:US12755896

    申请日:2010-04-07

    Abstract: A pneumatic tire is provided including a multiplicity of land portions 3A, 3B, 3C, 3D, and 3E formed by main grooves 2 extending linearly in the tire width direction partitioning the tread surface 1, and having a designated mounting direction on a vehicle. Among the multiplicity of land portions 3A, 3B, 3C, 3D, and 3E, lug grooves are not provided in a ground contact region R of the land portions 3A and 3E positioned on both shoulder sides. Lug grooves 4 inclining in the tire circumferential direction that have terminating parts in the land portions and opening to the main groove 2 on the vehicle inner side are formed at specified intervals in the tire circumferential direction in the land portions 3B and 3D inwardly adjacent to the land portions on both shoulder sides.

    Abstract translation: 提供一种充气轮胎,其包括由划分胎面1的轮胎宽度方向上线性延伸并且在车辆上具有指定的安装方向的主槽2形成的多个陆部3A,3B,3C,3D和3E。 在陆部3A,3B,3C,3D和3E的多个中,在位于两个台肩侧的陆部3A和3E的接地区域R中不设置横向花纹沟。 在陆地部分3B和3D中沿着轮胎周向方向上以规定的间隔在陆地部分3B和3D中相邻地形成在轮胎周向上倾斜的轮辋槽4,其在陆地部分中具有终端部分并且向车辆内侧的主槽2开口。 两侧的陆地部分。

    SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
    7.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 审中-公开
    半导体存储器件和半导体集成电路器件

    公开(公告)号:US20080247258A1

    公开(公告)日:2008-10-09

    申请号:US12117804

    申请日:2008-05-09

    CPC classification number: G11C11/413 G11C5/14 G11C7/22 G11C8/08 G11C2207/2227

    Abstract: A leakage current of the MOS transistor of a power control section at a standby time is drastically reduced and the reduction of the consumption power is achieved. A memory module is provided with power control sections. When either of the memory mats is not selected, the power control sections stop the power supply voltage to a non-selected memory mat, a word driver, an input-output circuit, a control circuit and an output circuit. At the standby time of the memory module, the power control section stops a power supply to power control sections, a control circuit, a predecoder circuit, and an input circuit. In this manner, the leakage current of the MOS transistor of the power control sections at the standby time can be drastically reduced.

    Abstract translation: 功率控制部的MOS晶体管的待机时的漏电流急剧下降,能够实现消耗功率的降低。 存储器模块具有功率控制部分。 当没有选择任何存储器垫时,功率控制部分将电源电压停止到未选择的存储器垫,字驱动器,输入输出电路,控制电路和输出电路。 在存储器模块的待机时,功率控制部分停止对功率控制部分,控制电路,预解码器电路和输入电路的电源。 以这种方式,可以显着降低在待机时功率控制部分的MOS晶体管的漏电流。

    Semiconductor memory device and semiconductor integrated circuit device
    8.
    发明授权
    Semiconductor memory device and semiconductor integrated circuit device 有权
    半导体存储器件和半导体集成电路器件

    公开(公告)号:US07251182B2

    公开(公告)日:2007-07-31

    申请号:US11353967

    申请日:2006-02-15

    CPC classification number: G11C11/413 G11C5/14 G11C7/22 G11C8/08 G11C2207/2227

    Abstract: A leakage current of the MOS transistor of a power control section at a standby time is drastically reduced and the reduction of the consumption power is achieved. A memory module is provided with power control sections. When either of the memory mats is not selected, the power control sections stop the power supply voltage to a non-selected memory mat, a word driver, an input-output circuit, a control circuit and an output circuit. At the standby time of the memory module, the power control section stops a power supply to power control sections, a control circuit, a predecoder circuit, and an input circuit. In this manner, the leakage current of the MOS transistor of the power control sections at the standby time can be drastically reduced.

    Abstract translation: 功率控制部的MOS晶体管的待机时的漏电流急剧下降,能够实现消耗功率的降低。 存储器模块具有功率控制部分。 当没有选择任何存储器垫时,功率控制部分将电源电压停止到未选择的存储器垫,字驱动器,输入输出电路,控制电路和输出电路。 在存储器模块的待机时,功率控制部分停止对功率控制部分,控制电路,预解码器电路和输入电路的电源。 以这种方式,可以显着降低在待机时功率控制部分的MOS晶体管的漏电流。

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