Optoelectronic semiconductor device comprising portions of a conductive layer and method for manufacturing an optoelectronic semiconductor device

    公开(公告)号:US12279466B2

    公开(公告)日:2025-04-15

    申请号:US17428988

    申请日:2020-02-07

    Inventor: Franz Eberhard

    Abstract: An optoelectronic semiconductor device may include a first and second semiconductor layer having a first and second conductivity type, respectively, a first contact structure, a contact layer, and a separating layer. Contact holes are arranged in the separating layer. The optoelectronic semiconductor device may include portions of a conductive layer arranged over a side of the separating layer facing away from the contact layer. The portions of the conductive layer are each connected to a conducting material in the contact holes. The first contact structure is connected to the contact layer via the portions of the conductive layer and the conducting material. A length of each of the portions is greater than a greatest width of the portions. The length denotes a shortest distance between an associated contact hole and a conductive material between adjacent portions, and the width is measured perpendicular to the length.

    Optoelectronic component and method for producing an optoelectronic component

    公开(公告)号:US12199224B2

    公开(公告)日:2025-01-14

    申请号:US17421950

    申请日:2020-01-09

    Abstract: In an embodiment an optoelectronic component includes a carrier, an optoelectronic semiconductor chip and an encapsulation, wherein the semiconductor chip is fixed on a mounting surface of the carrier and is electrically conductively connected with the carrier, wherein the encapsulation is located around the semiconductor chip and covers the mounting surface at least partially, wherein the encapsulation includes a first layer and a second layer, wherein the first layer is arranged between the mounting surface and the second layer, wherein each of the first layer and the second layer is based on a silicone, and wherein the first layer and the second layer are directly adjacent to each other in a region of an interface.

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