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    Optoelectronic semiconductor chip based on a phosphide compound semiconductor material
    2.
    发明授权
    Optoelectronic semiconductor chip based on a phosphide compound semiconductor material 有权

    公开(公告)号：US11502222B2

    公开(公告)日：2022-11-15

    申请号：US16480111

    申请日：2018-01-23

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Xue Wang ,  Markus Broell

    IPC: H01L33/14 ,  H01L21/02 ,  H01L21/04

    Abstract: An optoelectronic semiconductor chip including a semiconductor layer sequence containing a phosphide compound semiconductor material, wherein the semiconductor layer sequence includes a p-type semiconductor region, an n-type semiconductor region and an active layer disposed between the p-type semiconductor region and the n-type semiconductor region, a current spreading layer including a transparent conductive oxide adjoining the p-type semiconductor region, and a metallic p-connection layer at least regionally adjoining the current spreading layer, wherein the p-type semiconductor region includes a p-contact layer adjoining the current spreading layer, the p-contact layer contains GaP doped with C, a C dopant concentration in the p-contact layer is at least 5*1019 cm−3, and the p-contact layer is less than 100 nm thick.

    Semiconductor chip
    8.
    发明授权
    Semiconductor chip 有权

    公开(公告)号：US10263143B2

    公开(公告)日：2019-04-16

    申请号：US15948650

    申请日：2018-04-09

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Xue Wang ,  Markus Broell ,  Stefan Barthel

    IPC: H01L29/06 ,  H01L33/06 ,  H01L31/0304 ,  H01L31/0352 ,  H01L33/30

    Abstract: A semiconductor chip (20) is described comprising a semiconductor layer sequence (10) based on a phosphide compound semiconductor material or arsenide compound semiconductor material wherein the semiconductor layer sequence (10) contains a p-type semiconductor region (4) and an n-type semiconductor region (2). The n-type semiconductor region (2) comprises a superlattice structure (20) for improving current spreading, wherein the superlattice structure (20) has a periodic array of semiconductor layers (21, 22, 23, 24). A period of the superlattice structure (20) has at least one undoped first semiconductor layer (21) and a doped second semiconductor layer (22), wherein an electronic band gap E2 of the doped second semiconductor layer (22) is larger than an electronic band gap E1 of the undoped first semiconductor layer (21).

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