公开(公告)号：US20060121733A1

公开(公告)日：2006-06-08

申请号：US11254071

申请日：2005-10-18

申请人： Olli Kilpela ,  Wonyong Koh ,  Hannu Huotari ,  Marko Tuominen ,  Miika Leinikka

发明人： Olli Kilpela ,  Wonyong Koh ,  Hannu Huotari ,  Marko Tuominen ,  Miika Leinikka

IPC分类号： H01L21/4763 ,  H01L21/44

CPC分类号： C23C16/18 ,  C23C16/45525 ,  H01L21/28562 ,  H01L21/32051 ,  H01L21/76814 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76849

摘要： A method for enhancing the reliability of copper interconnects and/or contacts, such as the bottom of vias exposing top surfaces of buried copper, or at the top of copper lines just after CMP. The method comprises contacting the exposed copper surface with a vapor phase compound of a noble metal and selectively forming a layer of the noble metal on the exposed copper surface, either by a copper replacement reaction or selective deposition (e.g., ALD or CVD) of the noble metal.

公开(公告)号：US20050092249A1

公开(公告)日：2005-05-05

申请号：US10991556

申请日：2004-11-18

申请人： Olli Kilpela ,  Ville Saanila ,  Wei-Min Li ,  Kai-Erik Elers ,  Juhana Kostamo ,  Ivo Raaijmakers ,  Ernst Granneman

发明人： Olli Kilpela ,  Ville Saanila ,  Wei-Min Li ,  Kai-Erik Elers ,  Juhana Kostamo ,  Ivo Raaijmakers ,  Ernst Granneman

IPC分类号： C23C16/44 ,  C23C16/452 ,  C23C16/455 ,  C23C16/507 ,  C23C16/509 ,  C23C16/00

CPC分类号： C23C16/45544 ,  C23C16/4412 ,  C23C16/452 ,  C23C16/45514 ,  C23C16/45536 ,  C23C16/45565 ,  C23C16/45589 ,  C23C16/507 ,  C23C16/509

摘要： Various reactors for growing thin films on a substrate by subjecting the substrate to alternately repeated surface reactions of vapor-phase reactants are disclosed. In one embodiment, the reactor comprises a reaction chamber. A showerhead plate divides the reaction chamber into upper and lower parts. A first precursor is directed towards the lower half of the reaction chamber and a second precursor is directed towards the upper half of the reaction chamber. The substrate is disposed within the lower half of the reaction chamber. The showerhead plate includes plurality passages such that the upper half is in communication with the lower half of the reaction chamber. In another arrangement, the upper half of the reaction chamber defines a plasma cavity in which in-situ radicals are formed. In yet another arrangement, the reaction chamber includes a shutter plate, which is configured to selectively open and close the passages in the showerhead plate. In other arrangements, the showerhead plate is arranged to modify the local flow patterns of the gases flowing through the reaction chamber.

摘要翻译： 公开了用于通过使衬底经历气相反应物的交替重复表面反应而在衬底上生长薄膜的各种反应器。 在一个实施方案中，反应器包括反应室。 喷头板将反应室分成上部和下部。 第一前体指向反应室的下半部分，第二前体指向反应室的上半部分。 基板设置在反应室的下半部内。 喷头板包括多个通道，使得上半部分与反应室的下半部连通。 在另一种布置中，反应室的上半部限定了其中形成原位自由基的等离子体腔。 在另一种布置中，反应室包括挡板，其被构造成选择性地打开和关闭喷头板中的通道。 在其他布置中，喷头板被布置成改变流过反应室的气体的局部流动模式。

公开(公告)号：US06820570B2

公开(公告)日：2004-11-23

申请号：US10222005

申请日：2002-08-14

申请人： Olli Kilpela ,  Ville Saanila ,  Wei-Min Li ,  Kai-Erik Elers ,  Juhana Kostamo ,  Ivo Raaijmakers ,  Ernst Granneman

发明人： Olli Kilpela ,  Ville Saanila ,  Wei-Min Li ,  Kai-Erik Elers ,  Juhana Kostamo ,  Ivo Raaijmakers ,  Ernst Granneman

IPC分类号： C23C16509

CPC分类号： C23C16/45544 ,  C23C16/4412 ,  C23C16/452 ,  C23C16/45514 ,  C23C16/45536 ,  C23C16/45565 ,  C23C16/45589 ,  C23C16/507 ,  C23C16/509

摘要： Various reactors for growing thin films on a substrate by subjecting the substrate to alternately repeated surface reactions of vapor-phase reactants are disclosed. In one embodiment, the reactor comprises a reaction chamber. A showerhead plate divides the reaction chamber into upper and lower parts. A first precursor is directed towards the lower half of the reaction chamber and a second precursor is directed towards the upper half of the reaction chamber. The substrate is disposed within the lower half of the reaction chamber. The showerhead plate includes plurality passages such that the upper half is in communication with the lower half of the reaction chamber. In another arrangement, the upper half of the reaction chamber defines a plasma cavity in which in-situ radicals are formed. In yet another arrangement, the reaction chamber includes a shutter plate, which is configured to selectively open and close the passages in the showerhead plate. In other arrangements, the showerhead plate is arranged to modify the local flow patterns of the gases flowing through the reaction chamber.

摘要翻译： 公开了用于通过使衬底经历气相反应物的交替重复表面反应而在衬底上生长薄膜的各种反应器。 在一个实施方案中，反应器包括反应室。 喷头板将反应室分成上部和下部。 第一前体指向反应室的下半部分，第二前体指向反应室的上半部分。 基板设置在反应室的下半部内。 喷头板包括多个通道，使得上半部分与反应室的下半部连通。 在另一种布置中，反应室的上半部限定了其中形成原位自由基的等离子体腔。 在另一种布置中，反应室包括挡板，其构造成选择性地打开和关闭喷头板中的通道。 在其他布置中，喷头板被布置成改变流过反应室的气体的局部流动模式。

公开(公告)号：US20050221004A1

公开(公告)日：2005-10-06

申请号：US11039364

申请日：2005-01-19

申请人： Olli Kilpela ,  Juhana Kostamo

发明人： Olli Kilpela ,  Juhana Kostamo

IPC分类号： C23C16/00

CPC分类号： C23C16/45544 ,  C23C16/45525

摘要： A source system for introducing gaseous source chemicals to a reaction space is provided. The source system comprises an inactive gas source, a pressure controller, a reactant supply source, a gas flow control valve and a choked-flow element.

摘要翻译： 提供了一种用于将气态源化学品引入反应空间的源系统。 源系统包括惰性气体源，压力控制器，反应物供应源，气体流量控制阀和扼流流动元件。