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公开(公告)号：US20060121733A1
公开(公告)日：2006-06-08
申请号：US11254071
申请日：2005-10-18
申请人： Olli Kilpela , Wonyong Koh , Hannu Huotari , Marko Tuominen , Miika Leinikka
发明人： Olli Kilpela , Wonyong Koh , Hannu Huotari , Marko Tuominen , Miika Leinikka
IPC分类号： H01L21/4763 , H01L21/44
CPC分类号： C23C16/18 , C23C16/45525 , H01L21/28562 , H01L21/32051 , H01L21/76814 , H01L21/76834 , H01L21/76843 , H01L21/76849
摘要： A method for enhancing the reliability of copper interconnects and/or contacts, such as the bottom of vias exposing top surfaces of buried copper, or at the top of copper lines just after CMP. The method comprises contacting the exposed copper surface with a vapor phase compound of a noble metal and selectively forming a layer of the noble metal on the exposed copper surface, either by a copper replacement reaction or selective deposition (e.g., ALD or CVD) of the noble metal.
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公开(公告)号：US08927403B2
公开(公告)日：2015-01-06
申请号：US13188087
申请日：2011-07-21
申请人： Hannu Huotari , Marko Tuominen , Miika Leinikka
发明人： Hannu Huotari , Marko Tuominen , Miika Leinikka
CPC分类号： C23C16/45525 , C23C16/32 , C23C16/34 , C23C16/38 , C23C16/40 , H01L21/28079 , H01L29/517 , H01L29/66583
摘要： Processes are provided for selectively depositing thin films comprising one or more noble metals on a substrate by vapor deposition processes. In some embodiments, atomic layer deposition (ALD) processes are used to deposit a noble metal containing thin film on a high-k material, metal, metal nitride or other conductive metal compound while avoiding deposition on a lower k insulator such as silicon oxide. The ability to deposit on a first surface, such as a high-k material, while avoiding deposition on a second surface, such as a silicon oxide or silicon nitride surface, may be utilized, for example, in the formation of a gate electrode.
摘要翻译： 提供了用于通过气相沉积工艺在衬底上选择性地沉积包括一种或多种贵金属的薄膜的工艺。 在一些实施例中，原子层沉积（ALD）工艺用于在高k材料，金属，金属氮化物或其它导电金属化合物上沉积含有贵金属的薄膜，同时避免沉积在诸如氧化硅的下部k绝缘体上。 例如在栅电极的形成中，可以使用在第一表面上沉积的能力，例如高k材料，同时避免沉积在第二表面上，例如氧化硅或氮化硅表面。
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公开(公告)号：US20070026654A1
公开(公告)日：2007-02-01
申请号：US11376704
申请日：2006-03-14
申请人： Hannu Huotari , Marko Tuominen , Miika Leinikka
发明人： Hannu Huotari , Marko Tuominen , Miika Leinikka
IPC分类号： H01L21/3205
CPC分类号： C23C16/45525 , C23C16/32 , C23C16/34 , C23C16/38 , C23C16/40 , H01L21/28079 , H01L29/517 , H01L29/66583
摘要： Processes are provided for selectively depositing thin films comprising one or more noble metals on a substrate by vapor deposition processes. In some embodiments, atomic layer deposition (ALD) processes are used to deposit a noble metal containing thin film on a high-k material, metal, metal nitride or other conductive metal compound while avoiding deposition on a lower k insulator such as silicon oxide. The ability to deposit on a first surface, such as a high-k material, while avoiding deposition on a second surface, such as a silicon oxide or silicon nitride surface, may be utilized, for example, in the formation of a gate electrode.
摘要翻译： 提供了用于通过气相沉积工艺在衬底上选择性地沉积包括一种或多种贵金属的薄膜的工艺。 在一些实施例中，原子层沉积（ALD）工艺用于在高k材料，金属，金属氮化物或其它导电金属化合物上沉积含有贵金属的薄膜，同时避免沉积在诸如氧化硅的下部k绝缘体上。 例如在栅电极的形成中，可以使用在第一表面上沉积的能力，例如高k材料，同时避免沉积在第二表面上，例如氧化硅或氮化硅表面。
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公开(公告)号：US07985669B2
公开(公告)日：2011-07-26
申请号：US12649817
申请日：2009-12-30
申请人： Hannu Huotari , Marko Tuominen , Miika Leinikka
发明人： Hannu Huotari , Marko Tuominen , Miika Leinikka
IPC分类号： H01L21/20
CPC分类号： C23C16/45525 , C23C16/32 , C23C16/34 , C23C16/38 , C23C16/40 , H01L21/28079 , H01L29/517 , H01L29/66583
摘要： Processes are provided for selectively depositing thin films comprising one or more noble metals on a substrate by vapor deposition processes. In some embodiments, atomic layer deposition (ALD) processes are used to deposit a noble metal containing thin film on a high-k material, metal, metal nitride or other conductive metal compound while avoiding deposition on a lower k insulator such as silicon oxide. The ability to deposit on a first surface, such as a high-k material, while avoiding deposition on a second surface, such as a silicon oxide or silicon nitride surface, may be utilized, for example, in the formation of a gate electrode.
摘要翻译： 提供了用于通过气相沉积工艺在衬底上选择性地沉积包括一种或多种贵金属的薄膜的工艺。 在一些实施例中，原子层沉积（ALD）工艺用于在高k材料，金属，金属氮化物或其它导电金属化合物上沉积含有贵金属的薄膜，同时避免沉积在诸如氧化硅的下部k绝缘体上。 例如在栅电极的形成中，可以使用在第一表面上沉积的能力，例如高k材料，同时避免沉积在第二表面上，例如氧化硅或氮化硅表面。
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公开(公告)号：US20100136776A1
公开(公告)日：2010-06-03
申请号：US12649817
申请日：2009-12-30
申请人： Hannu Huotari , Marko Tuominen , Miika Leinikka
发明人： Hannu Huotari , Marko Tuominen , Miika Leinikka
IPC分类号： H01L21/28
CPC分类号： C23C16/45525 , C23C16/32 , C23C16/34 , C23C16/38 , C23C16/40 , H01L21/28079 , H01L29/517 , H01L29/66583
摘要： Processes are provided for selectively depositing thin films comprising one or more noble metals on a substrate by vapor deposition processes. In some embodiments, atomic layer deposition (ALD) processes are used to deposit a noble metal containing thin film on a high-k material, metal, metal nitride or other conductive metal compound while avoiding deposition on a lower k insulator such as silicon oxide. The ability to deposit on a first surface, such as a high-k material, while avoiding deposition on a second surface, such as a silicon oxide or silicon nitride surface, may be utilized, for example, in the formation of a gate electrode.
摘要翻译： 提供了用于通过气相沉积工艺在衬底上选择性地沉积包括一种或多种贵金属的薄膜的工艺。 在一些实施例中，原子层沉积（ALD）工艺用于在高k材料，金属，金属氮化物或其它导电金属化合物上沉积含有贵金属的薄膜，同时避免沉积在诸如氧化硅的下部k绝缘体上。 例如在栅电极的形成中，可以使用在第一表面上沉积的能力，例如高k材料，同时避免沉积在第二表面上，例如氧化硅或氮化硅表面。
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公开(公告)号：US20080200019A9
公开(公告)日：2008-08-21
申请号：US11376704
申请日：2006-03-14
申请人： Hannu Huotari , Marko Tuominen , Miika Leinikka
发明人： Hannu Huotari , Marko Tuominen , Miika Leinikka
IPC分类号： H01L21/3205
CPC分类号： C23C16/45525 , C23C16/32 , C23C16/34 , C23C16/38 , C23C16/40 , H01L21/28079 , H01L29/517 , H01L29/66583
摘要： Processes are provided for selectively depositing thin films comprising one or more noble metals on a substrate by vapor deposition processes. In some embodiments, atomic layer deposition (ALD) processes are used to deposit a noble metal containing thin film on a high-k material, metal, metal nitride or other conductive metal compound while avoiding deposition on a lower k insulator such as silicon oxide. The ability to deposit on a first surface, such as a high-k material, while avoiding deposition on a second surface, such as a silicon oxide or silicon nitride surface, may be utilized, for example, in the formation of a gate electrode.
摘要翻译： 提供了用于通过气相沉积工艺在衬底上选择性地沉积包括一种或多种贵金属的薄膜的工艺。 在一些实施例中，原子层沉积（ALD）工艺用于在高k材料，金属，金属氮化物或其它导电金属化合物上沉积含有贵金属的薄膜，同时避免沉积在诸如氧化硅的下部k绝缘体上。 例如在栅电极的形成中，可以使用在第一表面上沉积的能力，例如高k材料，同时避免沉积在第二表面上，例如氧化硅或氮化硅表面。
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公开(公告)号：US07476618B2
公开(公告)日：2009-01-13
申请号：US11254071
申请日：2005-10-18
IPC分类号： H01L21/44
CPC分类号： C23C16/18 , C23C16/45525 , H01L21/28562 , H01L21/32051 , H01L21/76814 , H01L21/76834 , H01L21/76843 , H01L21/76849
摘要： A method for enhancing the reliability of copper interconnects and/or contacts, such as the bottom of vias exposing top surfaces of buried copper, or at the top of copper lines just after CMP. The method comprises contacting the exposed copper surface with a vapor phase compound of a noble metal and selectively forming a layer of the noble metal on the exposed copper surface, either by a copper replacement reaction or selective deposition (e.g., ALD or CVD) of the noble metal.
摘要翻译： 一种用于增强铜互连和/或触点的可靠性的方法，例如暴露铜的顶表面的通孔的底部，或刚好在CMP之后的铜线的顶部。 该方法包括使暴露的铜表面与贵金属的气相化合物接触，并通过铜置换反应或选择性沉积（例如，ALD或CVD）选择性地在暴露的铜表面上形成贵金属层 贵金属。
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公开(公告)号：US20120009773A1
公开(公告)日：2012-01-12
申请号：US13188087
申请日：2011-07-21
申请人： Hannu Huotari , Marko Tuominen , Miika Leinikka
发明人： Hannu Huotari , Marko Tuominen , Miika Leinikka
IPC分类号： H01L21/28
CPC分类号： C23C16/45525 , C23C16/32 , C23C16/34 , C23C16/38 , C23C16/40 , H01L21/28079 , H01L29/517 , H01L29/66583
摘要： Processes are provided for selectively depositing thin films comprising one or more noble metals on a substrate by vapor deposition processes. In some embodiments, atomic layer deposition (ALD) processes are used to deposit a noble metal containing thin film on a high-k material, metal, metal nitride or other conductive metal compound while avoiding deposition on a lower k insulator such as silicon oxide. The ability to deposit on a first surface, such as a high-k material, while avoiding deposition on a second surface, such as a silicon oxide or silicon nitride surface, may be utilized, for example, in the formation of a gate electrode.
摘要翻译： 提供了用于通过气相沉积工艺在衬底上选择性地沉积包括一种或多种贵金属的薄膜的工艺。 在一些实施例中，原子层沉积（ALD）工艺用于在高k材料，金属，金属氮化物或其它导电金属化合物上沉积含有贵金属的薄膜，同时避免沉积在诸如氧化硅的下部k绝缘体上。 例如在栅电极的形成中，可以使用在第一表面上沉积的能力，例如高k材料，同时避免沉积在第二表面上，例如氧化硅或氮化硅表面。
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公开(公告)号：US07666773B2
公开(公告)日：2010-02-23
申请号：US11376704
申请日：2006-03-14
申请人： Hannu Huotari , Marko Tuominen , Miika Leinikka
发明人： Hannu Huotari , Marko Tuominen , Miika Leinikka
IPC分类号： H01L21/20
CPC分类号： C23C16/45525 , C23C16/32 , C23C16/34 , C23C16/38 , C23C16/40 , H01L21/28079 , H01L29/517 , H01L29/66583
摘要： Processes are provided for selectively depositing thin films comprising one or more noble metals on a substrate by vapor deposition processes. In some embodiments, atomic layer deposition (ALD) processes are used to deposit a noble metal containing thin film on a high-k material, metal, metal nitride or other conductive metal compound while avoiding deposition on a lower k insulator such as silicon oxide. The ability to deposit on a first surface, such as a high-k material, while avoiding deposition on a second surface, such as a silicon oxide or silicon nitride surface, may be utilized, for example, in the formation of a gate electrode.
摘要翻译： 提供了用于通过气相沉积工艺在衬底上选择性地沉积包括一种或多种贵金属的薄膜的工艺。 在一些实施例中，原子层沉积（ALD）工艺用于在高k材料，金属，金属氮化物或其它导电金属化合物上沉积含有贵金属的薄膜，同时避免沉积在诸如氧化硅的下部k绝缘体上。 例如在栅电极的形成中，可以使用在第一表面上沉积的能力，例如高k材料，同时避免沉积在第二表面上，例如氧化硅或氮化硅表面。
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公开(公告)号：US07405143B2
公开(公告)日：2008-07-29
申请号：US10810415
申请日：2004-03-25
CPC分类号： H01L21/76843 , H01L21/76856 , H01L21/76861 , H01L21/76862 , H01L21/76871 , H01L23/53238 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： The present invention produces a seed layer for the deposition of copper for metallizing integrated circuits. A diffusion barrier is deposited upon the wafer. In one embodiment of the invention, a metal oxide layer is then formed on the diffusion barrier. The oxidized metal is then reduced to a conductive lower oxidation state or to its elemental form. That metal is then used as the seed layer for the growth of copper. In another embodiment, the surface of the barrier layer is repeatedly oxidized and reduced in order to reduce incubation time for the growth of a seed layer. A ruthenium seed layer is then deposited over the treated barrier layer.
摘要翻译： 本发明产生用于沉积用于金属化集成电路的铜的种子层。 扩散屏障沉积在晶片上。 在本发明的一个实施例中，在扩散阻挡层上形成金属氧化物层。 然后将氧化的金属还原成导电的较低氧化态或其元素形式。 然后将该金属用作铜的生长的种子层。 在另一个实施方案中，阻挡层的表面被重复氧化和还原，以便减少种子层生长的孵育时间。 然后将钌籽晶层沉积在经处理的阻挡层上。
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