利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

80 条记录 (耗时 0.019 秒)

    High frequency semiconductor device
    1.
    发明授权
    High frequency semiconductor device 失效
    高频半导体器件

    公开(公告)号：US06747299B2

    公开(公告)日：2004-06-08

    申请号：US10090633

    申请日：2002-03-06

    申请人： Yutaka Mimino ,  Osamu Baba ,  Yoshio Aoki ,  Muneharu Gotoh

    发明人： Yutaka Mimino ,  Osamu Baba ,  Yoshio Aoki ,  Muneharu Gotoh

    IPC分类号： H01L21338

    CPC分类号： H01L23/5222 ,  H01L23/5286 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A high frequency semiconductor device includes a ground plate, an insulating layer, a power-supply conductor, an insulating interlayer, and a strip line as a line conductor. The power-supply conductor is disposed above the ground plate, with the insulating layer provided therebetween. The ground plate and the power-supply conductor have a capacitance formed therebetween. Thus, the line conductor regards the power-supply conductor as having a potential identical to that of the ground plate. This makes it possible to lay out the line conductor without considering the arrangement of the power-supply conductor. In other words, by two-dimensionally overlapping a microstrip line and a power-supply conductor in an MMIC, the degree of freedom in the device layout can be increased.

    摘要翻译： 高频半导体器件包括接地板，绝缘层，电源导体，绝缘中间层和作为线导体的带状线。 电源导体设置在接地板的上方，绝缘层设置在它们之间。 接地板和电源导体之间形成有电容。 因此，线路导体将电源导体视为具有与接地板相同的电位。 这使得可以在不考虑电源导体的布置的情况下布线。 换句话说，通过在MMIC中二维地重叠微带线和电源导体，可以提高器件布局的自由度。

    High frequency semiconductor device
    3.
    发明授权
    High frequency semiconductor device 失效
    高频半导体器件

    公开(公告)号：US06712284B2

    公开(公告)日：2004-03-30

    申请号：US10090614

    申请日：2002-03-06

    申请人： Yoshio Aoki ,  Yutaka Mimino ,  Osamu Baba ,  Muneharu Gotoh

    发明人： Yoshio Aoki ,  Yutaka Mimino ,  Osamu Baba ,  Muneharu Gotoh

    IPC分类号： H01L31072

    CPC分类号： H01Q1/526 ,  H01L23/552 ,  H01L2924/0002 ,  H01Q1/48 ,  H01Q9/0407 ,  H01L2924/00

    摘要： In a high frequency semiconductor device, a shield plate which is connected to the ground potential is provided above an MMIC structure including line conductors, with an insulating interlayer provided therebetween. By using the shield plate to shield the MMIC, interference caused by external electromagnetic waves or leakage of electromagnetic waves to the exterior can be reduced in a chip alone.

    摘要翻译： 在高频半导体器件中，连接到地电势的屏蔽板设置在包括线导体的MMIC结构之上，其间设置有绝缘夹层。 通过使用屏蔽板来屏蔽MMIC，可以仅在芯片中减少由外部电磁波引起的干扰或电磁波泄漏到外部的干扰。

    Semiconductor integrated circuit having three-dimensional interconnection lines
    4.
    发明授权
    Semiconductor integrated circuit having three-dimensional interconnection lines 失效
    具有三维互连线的半导体集成电路

    公开(公告)号：US06489671B2

    公开(公告)日：2002-12-03

    申请号：US10084921

    申请日：2002-03-01

    申请人： Yoshio Aoki ,  Yutaka Mimino ,  Osamu Baba ,  Muneharu Gotoh

    发明人： Yoshio Aoki ,  Yutaka Mimino ,  Osamu Baba ,  Muneharu Gotoh

    IPC分类号： H01L2352

    CPC分类号： H01L23/522 ,  H01L23/66 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor integrated circuit has a 3-dimmensional interconnection line structure for high-speed operation. One aspect of the present invention, there is provided a monolithic microwave integrated circuit (MMIC) having a 3-dimmensional tournament tree shaped multilayer interconnection lines, wherein a single electric feeding point on a top surface of the MMIC is divided, layer by layer, into plural electrodes on the semiconductor substrate of the MMIC via a plurality of laminated interconnection layers and vertical interconnection layers therebetween shaped like a tournament tree.

    摘要翻译： 半导体集成电路具有用于高速操作的3维互连线结构。 本发明的一个方面提供了一种具有三维比赛树形多层互连线的单片微波集成电路（MMIC），其中，MMIC的顶表面上的单个馈电点逐层分割， 通过多个层压互连层和其间形成像锦标赛树的垂直互连层，在MMIC的半导体衬底上形成多个电极。

    Semiconductor device having divided active regions with comb-teeth electrodes thereon
    6.
    发明授权
    Semiconductor device having divided active regions with comb-teeth electrodes thereon 失效
    半导体器件具有在其上具有梳齿电极的分割的有源区

    公开(公告)号：US06900482B2

    公开(公告)日：2005-05-31

    申请号：US10096856

    申请日：2002-03-14

    申请人： Yoshio Aoki ,  Yutaka Mimino ,  Osamu Baba ,  Muneharu Gotoh

    发明人： Yoshio Aoki ,  Yutaka Mimino ,  Osamu Baba ,  Muneharu Gotoh

    IPC分类号： H01L21/338 ,  H01L29/06 ,  H01L29/423 ,  H01L29/80 ,  H01L29/812 ,  H01L29/76 ,  H01L31/112

    CPC分类号： H01L29/42316 ,  H01L29/0692 ,  H01L29/802

    摘要： A high-frequency semiconductor device for power amplification has a comb-teeth electrode on each of active regions formed on the front surface of the semiconductor substrate. One aspect of the present invention, there is provided a monolithic microwave integrated circuit (MMIC) having a plurality of rectangular-shaped active regions arranged side by side on the front surface of the semiconductor substrate, each of the active regions having interdigited gate, drain and source electrodes thereon which are connected to the respective pads by multilayer interconnection technique. Additionally, the source potential is fed from the back surface of the substrate through a metal plugged via-hole.

    摘要翻译： 用于功率放大的高频半导体器件在形成在半导体衬底的前表面上的每个有源区上具有梳齿电极。 本发明的一个方面提供了一种单片式微波集成电路（MMIC），其具有在半导体衬底的前表面上并排布置的多个矩形有源区，每个有源区具有交叉的栅极，漏极 和其上的源电极，其通过多层互连技术连接到相应的焊盘。 此外，源电位通过金属堵塞的通孔从衬底的背面进给。

    High-frequency semiconductor device
    7.
    发明授权
    High-frequency semiconductor device 失效
    高频半导体器件

    公开(公告)号：US06825809B2

    公开(公告)日：2004-11-30

    申请号：US10090612

    申请日：2002-03-06

    申请人： Yoshio Aoki ,  Yutaka Mimino ,  Osamu Baba ,  Muneharu Gotoh

    发明人： Yoshio Aoki ,  Yutaka Mimino ,  Osamu Baba ,  Muneharu Gotoh

    IPC分类号： H01Q136

    CPC分类号： H01Q23/00 ,  H01Q1/38 ,  H01Q9/045

    摘要： A structure for eliminating the influence of an antenna line connected to the patch electrode on the antenna characteristics of a patch antenna built in an MMIC is disclosed. A through-hole is formed in the antenna ground plane which is provided under the patch electrode with an interlayer insulation film therebetween, the antena line is provided in the side opposite to the patch electrode with respect to the antena ground plane, and the patch electrode and antenna line are connected to each other with a conductor passing through the trough-hole.

    摘要翻译： 公开了一种用于消除连接到贴片电极的天线线的影响的结构，其内置于MMIC中的贴片天线的天线特性。 在贴片电极之下设置有在其间具有层间绝缘膜的天线接地面内形成有通孔，在与电极接地面相对的贴片电极的一侧设置电镀线，贴片电极 并且天线线通过穿过槽孔的导体彼此连接。

    High frequency semiconductor device
    8.
    发明授权
    High frequency semiconductor device 有权
    高频半导体器件

    公开(公告)号：US06774484B2

    公开(公告)日：2004-08-10

    申请号：US10090610

    申请日：2002-03-06

    申请人： Yutaka Mimino ,  Osamu Baba ,  Yoshio Aoki ,  Muneharu Gotoh

    发明人： Yutaka Mimino ,  Osamu Baba ,  Yoshio Aoki ,  Muneharu Gotoh

    IPC分类号： H01L2334

    CPC分类号： H01L23/5286 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A multilayer wiring structure for MMICs includes a power-supply wiring formed of a multilayer wiring (a plurality of power-supply lines). The wires are interconnected by throughholes. A power-supply current is divided and supplied to the lines. A large current can be supplied to the entirety of the multilayer wiring, even when the width of each of the lines is reduced. The multilayer wiring structure has an improved degree of freedom in the layout of wiring.

    摘要翻译： 用于MMIC的多层布线结构包括由多层布线（多条电源线）形成的电源布线。 电线通过通孔相互连接。 电源电流被分配并提供给线路。 即使当每个线的宽度减小时，也可以向整个多层布线提供大电流。 多层布线结构具有提高布线布局的自由度。

    Prefilled syringe
    9.
    发明授权
    Prefilled syringe 失效
    预充注射器

    公开(公告)号：US08398600B2

    公开(公告)日：2013-03-19

    申请号：US12519193

    申请日：2007-12-17

    申请人： Takeshi Hirokane ,  Yoshio Aoki

    发明人： Takeshi Hirokane ,  Yoshio Aoki

    IPC分类号： A61M5/00 ,  C08G63/02

    CPC分类号： A61M5/3129 ,  A61M5/28 ,  C08G63/668 ,  C08G63/672

    摘要： Provided is a prefilled syringe comprising, as a resin constituting at least a barrel and a joint, a polyester resin that contains a diol unit having a cyclic acetal skeleton in an amount of from 1 to 30% by mol based on diol units and a dicarboxylic acid unit having a naphthalene skeleton in an amount of 70% by mol or more based on dicarboxylic acid units, and satisfies the following parameters: (i) a glass transition temperature of 110° C. or more measured with a differential scanning calorimeter, (ii) a moisture permeation coefficient of 1 g·mm/m2/day or less, and (iii) an oxygen permeation coefficient of 10 cc·mm/m2/day/atm or less.

    摘要翻译： 提供一种预充式注射器，其包括作为至少构成桶和接头的树脂，所述聚酯树脂含有基于二醇单元为1〜30摩尔％的环状缩醛骨架的二醇单元和二羧酸 酸单元，其萘骨架的含量相对于二羧酸单元为70摩尔％以上，并且满足以下参数：（i）用差示扫描量热计测定的玻璃化转变温度为110℃以上（ ii）1g·mm / m 2 /天以下的透湿系数，（iii）10cc·mm / m 2 /天/天以上的透氧系数。