Abstract:
This invention describes a vacuum interface for a mass spectrometer system formed from a diverging nozzle. The vacuum interface may be used to transfer a beam of ions from an atmospheric pressure ionization source into a vacuum chamber for analysis by a mass analyser.
Abstract:
A flexible bag container (10) is filled by a system (500) and method for filling the bag container (10). The flexible bag container (10) has a pair of walls (12, 14) and a spout member (18) attached to one side wall of the container. This spout member is opened and closed in the filling system. A plug member (22) is inserted into the spout member (18) from outside of the bag container (10) and is withdrawable in the opposite direction in order to open the bag container. The bag container is filled via the spout member after removal of the plug member outwardly of the bag container and into a filling head, and then the plug member is replaced from within the filling head into the spout member to close the bag container.
Abstract:
Semiconductor processing apparatus is disclosed which provides for movement of a scanning arm 60 of a substrate or wafer holder 180, in at least two generally orthogonal directions (so-called X-Y scanning). Scanning in a first direction is longitudinally through an aperture 55 in a vacuum chamber wall. The arm 60 is reciprocated by one or more linear motors 90A, 90B. The arm 60 is supported relative to a slide 100 using gimballed air bearings so as to provide cantilever support for the arm relative to the slide 100. A compliant feedthrough 130 into the vacuum chamber for the arm 60 then acts as a vacuum seal and guide but does not itself need to provide bearing support. A Faraday 450 is attached to the arm 60 adjacent the substrate holder 180 to allow beam profiling to be carried out both prior to and during implant. The Faraday 450 can instead or additionally be mounted adjacent the rear of the substrate holder or at 90° to it to allow beam profiling to be carried out prior to implant, with the substrate support reversed or horizontal and out of the beam line.
Abstract:
An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.
Abstract:
An improvement which allows precise positioning of wafers within cassettes in preparation for removal of the wafers by automated equipment. The improvement includes mounting two sawtooth jigs upon the surface upon which the cassette tray is to be placed which extend up into the cassette. Wafers within the cassette rest within the precisely aligned grooves of the sawtooth jigs.When the cassette is placed upon the surface, automated equipment can readily remove the precisely aligned wafers from the cassette.
Abstract:
A method of deriving a primary and secondary billing scheme for a plurality of services each having a respective service consumption cost comprises, at a billing entity, receiving service consumption data. The billing entity applies each of a primary and secondary service consumption pricing plan to the service consumption data to derive respective primary and secondary billing schemes.
Abstract:
A catalyst system capable of catalysing the carbonylation of an olefinally unsaturated compound is described. The 5 catalyst system is obtainable by combining: (a) a metal of Group VIB or Group VIII B or a compound thereof; and (b) a bidentate phosphine of general formula (I) Ad)s(CR4R5R6)TQ2-A-(K,D)Ar(E,Z)-B-Q1(Ad)u(CR1R2R3)v. Ad represents an optionally substituted adamantyl radical bonded to the phosphorous atom via any one of its tertiary carbon atoms. A method of production of the catalyst is also illustrated.
Abstract translation:描述了能够催化烯属不饱和化合物羰基化的催化剂体系。 5催化剂体系可通过以下方法获得:(a)VIB族或VIIIB族金属或其化合物; 和(b)通式(I)的二齿膦Ad)(CR 4)5 R 5 D 6 (K,D)Ar(E,Z)-BQ 1(Ad)u u u u u u u u u u u u u u u u u u u u u u (CR 1)第2个和第3个或更多个。 Ad表示任意取代的金刚烷基,其通过其叔碳原子中的任一个与磷原子键合。 还示出了催化剂的生产方法。
Abstract:
This invention relates to an ion beam monitoring arrangement for use in an ion implanter where it is desirable to monitor the flux and/or a cross-sectional profile of the ion beam used for implantation. It is often desirable to measure the flux and/or cross-sectional profile of an ion beam in an ion implanter in order to improve control of ion implantation of a semiconductor wafer or similar. The present invention describes adapting the wafer holder to allow such beam profiling to be performed. The substrate holder may be used progressively to occlude the ion beam from a downstream flux monitor or a flux monitor may be located on the wafer holder that is provided with a slit entrance aperture.
Abstract:
An improvement which allows precise positioning of wafers within cassettes in preparation for removal of the wafers by automated equipment. The improvement includes mounting two sawtooth jigs upon the surface upon which the cassette tray is to be placed which extend up into the cassette. Wafers within the cassette rest within the precisely aligned grooves of the sawtooth jigs.
Abstract:
This invention relates to an ion beam monitoring arrangement for use in an ion implanter where it is desirable to monitor the flux and/or a cross-sectional profile of the ion beam used for implantation. It is often desirable to measure the flux and/or cross-sectional profile of an ion beam in an ion implanter in order to improve control of ion implantation of a semiconductor wafer or similar. The present invention describes adapting the wafer holder to allow such beam profiling to be performed. The substrate holder may be used progressively to occlude the ion beam from a downstream flux monitor or a flux monitor may be located on the wafer holder that is provided with a slit entrance aperture.