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公开(公告)号：US20070064215A1
公开(公告)日：2007-03-22
申请号：US10596647
申请日：2004-12-22
申请人： Peter Dirksen , Robert Morton , Peter Zandbergen , David Van Steelwinckel , Yuri Aksenov , Jeroen Lammers , Johannes Van Wingerden , Laurent Marinier
发明人： Peter Dirksen , Robert Morton , Peter Zandbergen , David Van Steelwinckel , Yuri Aksenov , Jeroen Lammers , Johannes Van Wingerden , Laurent Marinier
IPC分类号： G03B27/32
CPC分类号： G03F7/70341 , G03F7/70983
摘要： A method of irradiating to pattern a photosensitive layer such as a resist (L2) immersed in a fluid (L3), involves applying a removable transparent layer (L4, L5), projecting the radiation onto the resist through the immersion fluid and through the transparent layer, such that imperfections in the fluid are out of focus as projected on the surface, and subsequently removing the transparent layer. The transparent layer can help distance such imperfections from the focus of the radiation on the surface and so can reduce or eliminate shadowing. Hence the irradiation can be more complete, and defects reduced. It can be particularly effective for imperfections in the form of small bubbles or particles in the immersion fluid especially at the fluid/surface interface for example. The radiation can be for any purpose including inspection, processing, patterning and so on. The removal of the transparent layer can be combined with a step of developing the resist layer.
摘要翻译： 一种照射方法来照射浸入流体（L 3）中的抗蚀剂（L 2）等感光层，包括涂敷可移除的透明层（L 4，L 5），通过浸渍流体将辐射投射到抗蚀剂上 并且通过透明层，使得流体中的缺陷如投影在表面上而失焦，并随后去除透明层。 透明层可以帮助将这种缺陷从辐射的焦点远离在表面上，因此可以减少或消除阴影。 因此，照射可以更完整，并且缺陷减少。 对于浸入液体中的小气泡或颗粒形式的缺陷，特别是在流体/表面界面处的缺陷可能特别有效。 辐射可以用于任何目的，包括检查，加工，图案化等。 可以将透明层的去除与显影抗蚀剂层的步骤组合。
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公开(公告)号：US08067147B2
公开(公告)日：2011-11-29
申请号：US10596647
申请日：2004-12-22
申请人： Peter Dirksen , Robert Duncan Morton , Peter Zandbergen , David Van Steenwinckel , Yuri Aksenov , Jeroen Herman Lammers , Johannes Van Wingerden , Laurent Marinier
发明人： Peter Dirksen , Robert Duncan Morton , Peter Zandbergen , David Van Steenwinckel , Yuri Aksenov , Jeroen Herman Lammers , Johannes Van Wingerden , Laurent Marinier
IPC分类号： G03F7/00
CPC分类号： G03F7/70341 , G03F7/70983
摘要： A method of irradiating to pattern a photosensitive layer such as a resist (L2) immersed in a fluid (L3), involves applying a removable transparent layer (L4, L5), projecting the radiation onto the resist through the immersion fluid and through the transparent layer, such that imperfections in the fluid are out of focus as projected on the surface, and subsequently removing the transparent layer. The transparent layer can help distance such imperfections from the focus of the radiation on the surface and so can reduce or eliminate shadowing. Hence the irradiation can be more complete, and defects reduced. It can be particularly effective for imperfections in the form of small bubbles or particles in the immersion fluid especially at the fluid/surface interface for example. The radiation can be for any purpose including inspection, processing, patterning and so on. The removal of the transparent layer can be combined with a step of developing the resist layer.
摘要翻译： 一种照射方法来照射浸没在流体（L3）中的抗蚀剂（L2）的感光层，包括施加可去除的透明层（L4，L5），通过浸没流体将辐射投射到抗蚀剂上，并通过透明 使得流体中的缺陷如投射在表面上而失焦，随后去除透明层。 透明层可以帮助将这种缺陷从辐射的焦点远离在表面上，因此可以减少或消除阴影。 因此，照射可以更完整，并且缺陷减少。 对于浸入液体中的小气泡或颗粒形式的缺陷，特别是在流体/表面界面处的缺陷可能特别有效。 辐射可以用于任何目的，包括检查，加工，图案化等。 可以将透明层的去除与显影抗蚀剂层的步骤组合。
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公开(公告)号：US20060206851A1
公开(公告)日：2006-09-14
申请号：US10540068
申请日：2003-12-18
IPC分类号： G06F17/50
CPC分类号： G03F7/705 , G03F7/70625 , G03F7/70641
摘要： For determining best process variables (E, F, W) setting that provide optimum process window for a lithographic process for printing features having critical dimensions (CD) use is made of an overall performance characterizing parameter (Cpk) and of an analytical model, which describes CD data as a function of process parameters, like exposure dose (E) and focus (F). This allows calculating of the average value (μCD) and the variance (σCD) of the statistical CD distribution (CDd) and to determine the highest Cpk value and the associated values of process parameters, which values provide the optimum process window.
摘要翻译： 为了确定为光刻工艺提供最佳工艺窗口的最佳工艺变量（E，F，W）设置，用于打印具有关键尺寸（CD）的特征，使用总体性能特性参数（C＆gt; pk＆lt; ）和分析模型，其描述作为过程参数的函数的CD数据，如曝光剂量（E）和焦点（F）。 这允许计算统计CD分布（CDd）的平均值（muCD）和方差（sigmaCD），并确定最高的C max值和过程参数的相关值，这些值提供 最佳过程窗口。
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公开(公告)号：US07037626B2
公开(公告)日：2006-05-02
申请号：US10478339
申请日：2002-05-16
IPC分类号： G01F9/00
CPC分类号： H01L21/32139 , G03F1/26 , G03F1/36 , G03F7/0035
摘要： For lithographically manufacturing a device with a very high density, a design mask pattern (120) is distributed on a number of sub-patterns (120a, 120b, 120c) by means of a new method. The sub-patterns do not comprise “forbidden” structures (135) and can be transferred by conventional apparatus to a substrate layer to be patterned. For the transfer, a new stack of layers is used, which comprise a pair of a processing layer (22; 26) and an inorganic anti-reflection layer (24; 28) for each sub-pattern. After a first processing layer (26) has been patterned with a first sub-pattern, it is coated with a new resist layer (30) which is exposed with a second sub-pattern, and a second processing layer (22) under the first processing layer is processed with the second sub-pattern.
摘要翻译： 为了光刻制造具有非常高密度的器件，通过新的方法将设计掩模图案（120）分布在多个子图案（120a，120b，120c）上。 子图案不包括“禁止”结构（135）并且可以通过常规设备传送到待图案化的基底层。 为了传送，使用新的层叠层，其包括用于每个子图案的一对处理层（22; 26）和无机抗反射层（24; 28）。 在第一处理层（26）已经被图案化为第一子图案之后，其被涂覆有用第二子图案曝光的新抗蚀剂层（30）和在第一子图案下方的第二处理层（22） 用第二子图案处理处理层。
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公开(公告)号：US07659041B2
公开(公告)日：2010-02-09
申请号：US11367810
申请日：2006-03-01
CPC分类号： H01L21/32139 , G03F1/26 , G03F1/36 , G03F7/0035
摘要： For lithographically manufacturing a device with a very high density, a design mask pattern (120) is distributed on a number of sub-patterns (120a, 120b, 120c) by means of a new method. The sub-patterns do not comprise “forbidden” structures (135) and can be transferred by conventional apparatus to a substrate layer to be patterned. For the transfer, a new stack of layers is used, which comprise a pair of a processing layer (22; 26) and an inorganic anti-reflection layer (24; 28) for each sub-pattern. After a first processing layer (26) has been patterned with a first sub-pattern, it is coated with a new resist layer (30) which is exposed with a second sub-pattern, and a second processing layer (22) under the first processing layer is processed with the second sub-pattern.
摘要翻译： 为了光刻制造具有非常高密度的器件，通过新的方法将设计掩模图案（120）分布在多个子图案（120a，120b，120c）上。 子图案不包括“禁止”结构（135）并且可以通过常规设备传送到待图案化的基底层。 为了传送，使用新的层叠层，其包括用于每个子图案的一对处理层（22; 26）和无机抗反射层（24; 28）。 在第一处理层（26）已经被图案化为第一子图案之后，其被涂覆有用第二子图案曝光的新抗蚀剂层（30）和在第一子图案下方的第二处理层（22） 用第二子图案处理处理层。
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公开(公告)号：US20060160029A1
公开(公告)日：2006-07-20
申请号：US11367810
申请日：2006-03-01
IPC分类号： G03F7/00
CPC分类号： H01L21/32139 , G03F1/26 , G03F1/36 , G03F7/0035
摘要： For lithographically manufacturing a device with a very high density, a design mask pattern (120) is distributed on a number of sub-patterns (120a, 120b, 120c) by means of a new method. The sub-patterns do not comprise “forbidden” structures (135) and can be transferred by conventional apparatus to a substrate layer to be patterned. For the transfer, a new stack of layers is used, which comprise a pair of a processing layer (22; 26) and an inorganic anti-reflection layer (24; 28) for each sub-pattern. After a first processing layer (26) has been patterned with a first sub-pattern, it is coated with a new resist layer (30) which is exposed with a second sub-pattern, and a second processing layer (22) under the first processing layer is processed with the second sub-pattern.
摘要翻译： 为了光刻制造具有非常高密度的器件，通过新的方法将设计掩模图案（120）分布在多个子图案（120a，120b，120c）上。 子图案不包括“禁止”结构（135）并且可以通过常规设备传送到待图案化的基底层。 为了传送，使用新的层叠层，其包括用于每个子图案的一对处理层（22; 26）和无机抗反射层（24; 28）。 在第一处理层（26）已经被图案化为第一子图案之后，其被涂覆有用第二子图案曝光的新抗蚀剂层（30）和在第一子图案下方的第二处理层（22） 用第二子图案处理处理层。
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公开(公告)号：US20050211375A1
公开(公告)日：2005-09-29
申请号：US11096125
申请日：2005-03-30
IPC分类号： C23F1/24 , C09K13/04 , C09K13/08 , G03F7/09 , H01L21/00 , H01L21/027 , H01L21/28 , H01L21/306 , H01L21/3065 , H01L21/311 , H01L21/3213 , H01L29/423 , H01L29/49 , H01L29/78 , H01L21/8242
CPC分类号： C09K13/08 , H01L21/0276 , H01L21/31111 , H01L21/67075 , H01L21/67086
摘要： The invention relates to a method of manufacturing a semiconductor device comprising the step of removing a silicon and nitrogen containing material by means of wet etching with an aqueous solution comprising hydrofluoric acid in a low concentration, the aqueous solution being applied under elevated pressure to reach a temperature above 100° C.
摘要翻译： 本发明涉及一种制造半导体器件的方法，包括通过用包含低浓度的氢氟酸的水溶液湿法蚀刻除去含硅和氮的材料的步骤，该水溶液在升高的压力下被施加到 温度高于100℃
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公开(公告)号：US20120091546A1
公开(公告)日：2012-04-19
申请号：US13265535
申请日：2010-04-20
申请人： Geert Langereis , Twan Van Lippen , Freddy Roozeboom , Hilco Suy , Klaus Reimann , Jozef Thomas Martinus Van Beek , Casper Van Der Avoort , Johannes Van Wingerden , Kim Phan Le , Martijn Goosens , Peter Gerard Steeneken
发明人： Geert Langereis , Twan Van Lippen , Freddy Roozeboom , Hilco Suy , Klaus Reimann , Jozef Thomas Martinus Van Beek , Casper Van Der Avoort , Johannes Van Wingerden , Kim Phan Le , Martijn Goosens , Peter Gerard Steeneken
CPC分类号： H04R19/005 , B81B3/0072 , B81B2201/0257 , B81B2203/0127 , H04R7/18 , H04R19/04 , H04R31/006
摘要： A microphone comprises a substrate (20), a microphone membrane (10) defining an acoustic input surface and a backplate (11) supported with respect to the membrane with a fixed spacing between the backplate (11) and the membrane (10). A microphone periphery area comprises parallel corrugations (24) in the membrane (10) and backplate (11). By using the same corrugated suspension for both the membrane and the backplate, the sensitivity to body noise is optimally suppressed.
摘要翻译： 麦克风包括基板（20），限定声输入表面的麦克风膜（10）和相对于膜支撑的背板（11），所述背板（11）在背板（11）和膜（10）之间具有固定的间隔。 麦克风外围区域包括膜（10）和背板（11）中的平行波纹（24）。 通过对膜和背板使用相同的波纹悬挂，对身体噪声的敏感性被最佳地抑制。
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9.发明授权公开(公告)号：US06404867B1
公开(公告)日：2002-06-11
申请号：US09630635
申请日：2000-08-01
IPC分类号： H04M1500
CPC分类号： H04Q3/66 , H04L12/14 , H04L12/1403
摘要： A point of presence with data collecting means (24; 43) arranged for collecting predetermined data and having a first output for outputting said predetermined data at a first transmission rate, the point of presence having forwarding means (22, 28(1), 28(2); 44) with a forwarding means output for outputting data to a dedicated telecommunication network (8) at a second transmission rate differing from said first transmission rate, said point of presence also having feedback means (26(1), 26(2), 26(3), 26(4); 46, 48; 46, 48, 26(5), 52) having a feedback input and a feedback output, said feedback means being arranged to receive said predetermined data at said first transmission rate from said data collecting means (24; 43), said forwarding means (22, 28(1), 28(2); 44) being connected to said feedback output for receiving said predetermined data and forwarding these predetermined data to said dedicated telecommunication network (8) at said second transmission rate.
摘要翻译： 具有数据收集装置（24; 43）的存在点被布置成用于收集预定数据并具有用于以第一传输速率输出所述预定数据的第一输出，所述存在点具有转发装置（22,28（1），28 （2）; 44）具有用于以与所述第一传输速率不同的第二传输速率将数据输出到专用电信网络（8）的转发装置输出，所述存在点还具有反馈装置（26（1），26 2），26（3），26（4）; 46,48; 46,48,26（5），52）具有反馈输入和反馈输出，所述反馈装置被布置成在所述第一 来自所述数据采集装置（24; 43）的传输速率，所述转发装置（22,28（1），28（2）; 44）连接到所述反馈输出端，用于接收所述预定数据，并将这些预定数据转发到所述专用 电信网络（8）以所述第二传输速率。
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公开(公告)号：US07001838B2
公开(公告)日：2006-02-21
申请号：US10475884
申请日：2002-04-18
IPC分类号： H01L21/4763
CPC分类号： C09K13/08 , H01L21/0276 , H01L21/31111 , H01L21/67075 , H01L21/67086
摘要： The invention relates to a method of manufacturing a semiconductor device, comprising the provision of a substrate with a layer of silicon thereon, an inorganic anti-reflective layer applied to the layer of silicon, and a resist mask applied to the inorganic anti-reflective layer, which method comprises the steps of: patterning the inorganic anti-reflective layer by means of the resist mask, patterning the layer of silicon, removing the resist mask, and removing the inorganic anti-reflective layer by means of etching with an aqueous solution comprising hydrofluoric acid in a low concentration, which aqueous solution is applied at a high temperature.
摘要翻译： 本发明涉及一种制造半导体器件的方法，包括提供其上具有硅层的衬底，施加到硅层的无机抗反射层，以及施加到无机抗反射层的抗蚀剂掩模 ，该方法包括以下步骤
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