公开(公告)号：US09263252B2

公开(公告)日：2016-02-16

申请号：US13735949

申请日：2013-01-07

申请人： Chun-Wei Chang ,  Yi-An Lin ,  Neng-Kuo Chen ,  Sey-Ping Sun ,  Clement Hsingjen Wann ,  Yu-Lien Huang

发明人： Chun-Wei Chang ,  Yi-An Lin ,  Neng-Kuo Chen ,  Sey-Ping Sun ,  Clement Hsingjen Wann ,  Yu-Lien Huang

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L21/02 ,  H01L29/66

CPC分类号： H01L21/022 ,  H01L29/66545

摘要： This description relates to a method including forming an interlayer dielectric (ILD) layer and a dummy gate structure over a substrate and forming a cavity in a top portion of the ILD layer. The method further includes forming a protective layer to fill the cavity. The method further includes planarizing the protective layer. A top surface of the planarized protective layer is level with a top surface of the dummy gate structure. This description also relates to a semiconductor device including first and second gate structures and an ILD layer formed on a substrate. The semiconductor device further includes a protective layer formed on the ILD layer, the protective layer having a different etch selectivity than the ILD layer, where a top surface of the protective layer is level with the top surfaces of the first and second gate structures.

摘要翻译： 该描述涉及包括在衬底上形成层间电介质（ILD）层和虚拟栅极结构并在ILD层的顶部形成腔的方法。 该方法还包括形成保护层以填充空腔。 该方法还包括平坦化保护层。 平坦化保护层的顶表面与虚拟栅结构的顶表面平齐。 该描述还涉及包括第一和第二栅极结构以及形成在衬底上的ILD层的半导体器件。 半导体器件还包括形成在ILD层上的保护层，保护层具有与ILD层不同的蚀刻选择性，其中保护层的顶表面与第一和第二栅极结构的顶表面平齐。

公开(公告)号：US09151726B2

公开(公告)日：2015-10-06

申请号：US13552168

申请日：2012-07-18

申请人： Tai-Ping Sun ,  Tak-Shing Ching ,  Wei-Cheng Yeh

发明人： Tai-Ping Sun ,  Tak-Shing Ching ,  Wei-Cheng Yeh

IPC分类号： G01N27/327

CPC分类号： G01N27/3273

摘要： A measurement device is for use with a current-type sensor unit, which, when applied with a driving voltage, is capable of reacting with a target substance for generating a sensor current that corresponds to a concentration level of the target substance, and includes: a driving unit operable to generate the driving voltage that includes alternating current (AC) and direct current (DC) components; and a processing unit for receiving the sensor current from the current-type sensor unit, and operable to determine the concentration level of the target substance according to a peak-to-peak value of the sensor current received by the processing unit.

摘要翻译： 测量装置与电流型传感器单元一起使用，当施加驱动电压时，其能够与目标物质反应，以产生对应于目标物质的浓度水平的传感器电流，并且包括： 驱动单元，其可操作以产生包括交流（AC）和直流（DC）分量的驱动电压; 以及处理单元，用于从当前型传感器单元接收传感器电流，并且可操作以根据由处理单元接收的传感器电流的峰 - 峰值确定目标物质的浓度水平。

公开(公告)号：US09078321B2

公开(公告)日：2015-07-07

申请号：US13555666

申请日：2012-07-23

申请人： Tai-Ping Sun ,  Chia-Hung Wang ,  Jia-Hao Li

发明人： Tai-Ping Sun ,  Chia-Hung Wang ,  Jia-Hao Li

IPC分类号： H05B33/08

CPC分类号： H05B33/0824

摘要： A light emitting system includes: a voltage detecting unit connected across a solid-state light emitting component for detecting a forward voltage thereof and generating a detection voltage having a magnitude dependent on the forward voltage; a current control unit connected to the light emitting component for controlling, according to a compensation voltage, flow of an operating current, which has a magnitude dependent on the compensation voltage, therethrough; and a compensation voltage module connected to the voltage detecting unit and the current control unit, disposed to receive a reference voltage, and configured to generate the compensation voltage, which varies according to the forward voltage, for provision to the current control unit according to the detection voltage, an operating voltage having a magnitude dependent on the operating current, and the reference voltage.

摘要翻译： 发光系统包括：电压检测单元，连接在固态发光元件两端，用于检测其正向电压，并产生具有取决于正向电压的幅度的检测电压; 连接到所述发光部件的电流控制单元，用于根据补偿电压控制具有取决于所述补偿电压的幅度的工作电流的流量; 以及补偿电压模块，连接到所述电压检测单元和所述电流控制单元，被设置为接收参考电压，并且被配置为产生根据所述正向电压而变化的所述补偿电压，以根据所述电流控制单元提供给所述当前控制单元 检测电压，具有取决于工作电流的幅度的工作电压和参考电压。

公开(公告)号：US09006802B2

公开(公告)日：2015-04-14

申请号：US13212834

申请日：2011-08-18

申请人： Gin-Chen Huang ,  Tsai-Fu Hsiao ,  Ching-Hong Jiang ,  Neng-Kuo Chen ,  Hongfa Luan ,  Sey-Ping Sun ,  Clement Hsingjen Wann

发明人： Gin-Chen Huang ,  Tsai-Fu Hsiao ,  Ching-Hong Jiang ,  Neng-Kuo Chen ,  Hongfa Luan ,  Sey-Ping Sun ,  Clement Hsingjen Wann

IPC分类号： H01L29/78 ,  H01L21/02 ,  H01L29/66

CPC分类号： H01L21/02274 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/02332 ,  H01L21/324 ,  H01L29/66795

摘要： Semiconductor device manufacturing methods and methods of forming insulating material layers are disclosed. In one embodiment, a method of forming a composite insulating material layer of a semiconductor device includes providing a workpiece and forming a first sub-layer of the insulating material layer over the workpiece using a first plasma power level. A second sub-layer of the insulating material layer is formed over the first sub-layer of the insulating material layer using a second plasma power level, and the workpiece is annealed.

摘要翻译： 公开了形成绝缘材料层的半导体器件制造方法和方法。 在一个实施例中，形成半导体器件的复合绝缘材料层的方法包括提供工件并使用第一等离子体功率电平在工件上形成绝缘材料层的第一子层。 使用第二等离子体功率电平在绝缘材料层的第一子层上形成绝缘材料层的第二子层，并且将工件退火。

公开(公告)号：US09006638B2

公开(公告)日：2015-04-14

申请号：US13443315

申请日：2012-04-10

申请人： Tai-Ping Sun ,  Yi-Chuan Lu ,  I-Tin Liu

发明人： Tai-Ping Sun ,  Yi-Chuan Lu ,  I-Tin Liu

IPC分类号： H03F3/08 ,  H01J40/14 ,  H03K17/78 ,  H03F11/00

CPC分类号： H03F3/08

摘要： A capacitive transimpedance amplifier for a detector unit capable of generating first and second detection currents comprises: a read-out circuit including an integration capacitor coupled between an input node connected to the detector unit, and a common node between first and second transistors connected in series, and a sampling and holding unit coupled between the first common node and an output node for sampling and holding a voltage at the first common node; and a switch unit connected to control ends of the first and second transistors and the input node, and operable between a first state, where the first detection current is read out, and a second state, where the second detection current is read out.

摘要翻译： 一种能够产生第一和第二检测电流的检测器单元的电容互阻抗放大器包括：读出电路，包括耦合在连接到检测器单元的输入节点和串联连接的第一和第二晶体管之间的公共节点之间的积分电容器 以及耦合在所述第一公共节点和输出节点之间的采样和保持单元，用于在所述第一公共节点处采样和保持电压; 以及开关单元，连接到控制第一和第二晶体管和输入节点的端部，并且可在读出第一检测电流的第一状态与读出第二检测电流的第二状态之间操作。

公开(公告)号：US08946828B2

公开(公告)日：2015-02-03

申请号：US12702683

申请日：2010-02-09

申请人： Sey-Ping Sun ,  Tsung-Lin Lee ,  Chin-Hsiang Lin ,  Chih-Hao Chang ,  Chen-Nan Yeh ,  Chao-An Jong

发明人： Sey-Ping Sun ,  Tsung-Lin Lee ,  Chin-Hsiang Lin ,  Chih-Hao Chang ,  Chen-Nan Yeh ,  Chao-An Jong

IPC分类号： H01L29/78 ,  H01L21/768 ,  H01L29/66

CPC分类号： H01L29/4232 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76897 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/66545 ,  H01L29/78

摘要： A semiconductor device includes a semiconductor substrate; a gate stack overlying the substrate, a spacer formed on sidewalls of the gate stack, and a protection layer overlying the gate stack for filling at least a portion of a space surrounded by the spacer and the top surface of the gate stack. A top surface of the spacer is higher than a top surface of the gate stack.

摘要翻译： 半导体器件包括半导体衬底; 覆盖衬底的栅极堆叠，形成在栅极堆叠的侧壁上的间隔物，以及覆盖栅极堆叠的保护层，用于填充由间隔物和栅极堆叠的顶表面围绕的空间的至少一部分。 间隔件的顶表面高于栅极堆叠的顶表面。

公开(公告)号：US08936375B2

公开(公告)日：2015-01-20

申请号：US13648920

申请日：2012-10-10

申请人： Ping Sun Lau

发明人： Ping Sun Lau

IPC分类号： F21V21/30 ,  F21L4/02

CPC分类号： F21L4/02 ,  F21V21/088 ,  F21V21/30 ,  F21V21/32 ,  F21Y2115/10

摘要： A lighting apparatus includes a light housing, a base mount, an extension member, and a lighting arrangement. The light housing includes a first housing member moveably supported such that the first housing member is capable of rotating about a first longitudinal axis thereof, and a second housing member movably supported such that the second housing member is capable of rotating about a second longitudinal axis thereof. The lighting arrangement is provided in the light housing for forming a plurality of light sources of predetermined intensity, wherein when the first housing member and the second housing member are pivotally moved with respect to each other and rotatably moved about the first longitudinal axis and the second longitudinal axis respectively, the light sources are arranged to selectively and simultaneously provide illumination towards two illumination directions.

摘要翻译： 照明装置包括灯壳，基座，延伸构件和照明装置。 灯壳体包括可移动地支撑的第一壳体构件，使得第一壳体构件能够围绕其第一纵向轴线旋转;以及第二壳体构件，其可移动地被支撑，使得第二壳体构件能够围绕其第二纵向轴线旋转 。 照明布置设置在灯壳中，用于形成预定强度的多个光源，其中当第一壳体构件和第二壳体构件相对于彼此枢转运动并围绕第一纵向轴线可旋转地运动时，第二壳体构件 纵向轴线，光源被布置成选择性地并且同时向两个照明方向提供照明。

公开(公告)号：USD719632S1

公开(公告)日：2014-12-16

申请号：US29468708

申请日：2013-10-02

申请人： Ping Sun Lau

设计人： Ping Sun Lau

公开(公告)号：US20140098526A1

公开(公告)日：2014-04-10

申请号：US13648920

申请日：2012-10-10

申请人： Ping Sun LAU

发明人： Ping Sun LAU

IPC分类号： F21V21/30 ,  F21L4/02

CPC分类号： F21L4/02 ,  F21V21/088 ,  F21V21/30 ,  F21V21/32 ,  F21Y2115/10

摘要： A lighting apparatus includes a light housing, a base mount, an extension member, and a lighting arrangement. The light housing includes a first housing member moveably supported such that the first housing member is capable of rotating about a first longitudinal axis thereof, and a second housing member movably supported such that the second housing member is capable of rotating about a second longitudinal axis thereof. The lighting arrangement is provided in the light housing for forming a plurality of light sources of predetermined intensity, wherein when the first housing member and the second housing member are pivotally moved with respect to each other and rotatably moved about the first longitudinal axis and the second longitudinal axis respectively, the light sources are arranged to selectively and simultaneously provide illumination towards two illumination directions.

摘要翻译： 照明装置包括灯壳，基座，延伸构件和照明装置。 灯壳体包括可移动地支撑的第一壳体构件，使得第一壳体构件能够围绕其第一纵向轴线旋转;以及第二壳体构件，其可移动地被支撑，使得第二壳体构件能够围绕其第二纵向轴线旋转 。 照明布置设置在灯壳中，用于形成预定强度的多个光源，其中当第一壳体构件和第二壳体构件相对于彼此枢转运动并围绕第一纵向轴线可旋转地运动时，第二壳体构件 纵向轴线，光源被布置成选择性地并且同时向两个照明方向提供照明。

公开(公告)号：US20140042491A1

公开(公告)日：2014-02-13

申请号：US13572494

申请日：2012-08-10

申请人： Neng-Kuo CHEN ,  Clement Hsingjen WANN ,  Yi-An LIN ,  Chun-Wei CHANG ,  Sey-Ping SUN

发明人： Neng-Kuo CHEN ,  Clement Hsingjen WANN ,  Yi-An LIN ,  Chun-Wei CHANG ,  Sey-Ping SUN

IPC分类号： H01L29/38 ,  H01L21/306

CPC分类号： H01L29/66545 ,  H01L21/28123 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/32135 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L29/165 ,  H01L29/6653 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

摘要： This description relates to a gate electrode of a field effect transistor. An exemplary structure for a field effect transistor includes a substrate; a gate electrode over the substrate including a first top surface and a sidewall; a source/drain (S/D) region at least partially disposed in the substrate on one side of the gate electrode; a spacer on the sidewall distributed between the gate electrode and the S/D region; and a contact etch stop layer (CESL) adjacent to the spacer and further comprising a portion extending over the S/D region, wherein the portion has a second top surface substantially coplanar with the first top surface.

摘要翻译： 该描述涉及场效应晶体管的栅电极。 场效应晶体管的示例性结构包括：衬底; 位于所述基板上方的包括第一顶表面和侧壁的栅电极; 至少部分地设置在所述栅电极的一侧的所述衬底中的源极/漏极（S / D）区域; 在所述侧壁上的间隔物分布在所述栅电极和所述S / D区之间; 以及与所述间隔物相邻的接触蚀刻停止层（CESL），并且还包括在所述S / D区域上延伸的部分，其中所述部分具有与所述第一顶表面基本上共面的第二顶表面。