摘要:
A seamless locking drain connector structure of a metallic sink is provided. A water outlet of a bottom of the metallic sink is integrally formed with an annular ring extending outward from the bottom of the metallic sink. The annular ring is fixedly connected with a connecting sleeve. The connecting sleeve is formed with outer threads. An open end of a stepped trough of the drain connector is formed with a retaining rim portion relative to the bottom end of the connecting sleeve. The retaining rim portion is connected with a locking sleeve. The locking sleeve is formed with inner threads corresponding to the outer threads of the connecting sleeve. The inner threads mesh with the outer threads, such that the retaining rim portion of the drain connector is tightly locked to the bottom end of the connecting sleeve to connect with the annular ring and the water outlet.
摘要:
An electrical contact (20) for using in a CPU (central processing unit) socket, includes a planar base portion (201), a pair of flexible arms (203) extending from the planar base portion, a pair of contact portions (204) being orthogonal to the flexible arms, a pair of stopper portions (205) coplanarly formed on the flexible arms and a solder portion (206) being orthogonal to the planar base portion and extending parallel to the contact portions.
摘要:
An integrated circuit device is described. In particular, the integrated circuit comprises a substrate comprising active devices; a plurality of metal layers formed over the substrate, the plurality of metal layers being separated by insulating layers; a plurality of vias enabling connections to the active devices of the substrate; a contact pad support structure defining an opening in a metal layer of the plurality of metal layers and being coupled to an interconnect line; and a contact pad formed over the contact pad support structure. A method of implementing a contact pad in an integrated circuit is also disclosed.
摘要:
Method and apparatus for compensating an integrated circuit design for mechanical stress effects. One aspect of the invention relates to designing an integrated circuit. Layout data is obtained that describes layers of the integrated circuit. At least one of the layers is analyzed to detect at least one structure susceptible to damage from mechanical stress. A bias is automatically added to each of the at least one structure to reduce mechanical stress of the at least one structure as fabricated. Augmented layout data is then provided for the integrated circuit.
摘要:
The present invention provides a tunable circuit for quickly optimizing an electrical field generated by the F-N tunneling operation. To optimize this electrical field, the charging of the positive charge pump is begun after the charging of the negative charge pump. The tunable circuit of the present invention provides a means to detect the optimal negative voltage at which pumping of the positive voltage should begin. The tunable circuit includes a resistor chain coupled between a first reference voltage and a negative voltage from a negative charge pump. When charging of the negative charge pump begins, a comparator compares the voltage at a node within the resistor chain to a second reference voltage. In accordance with the present invention, the node voltage within the resistor chain is equal to the second reference voltage when the negative voltage is equal to the voltage to be detected. Thus, the comparator generates a trigger signal when the voltage at the node decreases to the second reference voltage. This output signal triggers the pumping of the positive charge pump. By changing the resistance within the resistor chain, the positive charge pumping may be initiated at varying negative voltages. In the present invention, additional resistance is added to or removed from the resistor chain via metal options or switches.