公开(公告)号：US5063323A

公开(公告)日：1991-11-05

申请号：US552643

申请日：1990-07-16

Applicant: Robert T. Longo ,  Zaher Bardai ,  Arthur E. Manoly ,  Ralph Forman ,  Randy K. Rolph

Inventor： Robert T. Longo ,  Zaher Bardai ,  Arthur E. Manoly ,  Ralph Forman ,  Randy K. Rolph

IPC: H01J7/18 ,  H01J1/304 ,  H01J9/02 ,  H01J9/39 ,  H01J21/10 ,  H01J29/94 ,  H01J31/12

CPC classification number: H01J1/3042 ,  H01J21/105 ,  H01J9/39 ,  H01J2209/3893

Abstract: Outgassed materials liberated in spaces between pointed field emitter tips and an electrode structure during electrical operation of a field emitter device are vented through passageways to a pump of gettering material provided in a separate space. The passageways may include channels formed through an insulating layer between a base for the field emitters, and the electrode structure, with the channels interconnecting adjacent spaces in a row direction. Where the electrode structure includes a gate electrode layer and an anode layer, similar channels may be formed through an insulator layer provided therebetween. The field emitters may be formed in an arrangement of rows and columns, with the spacing between the columns smaller than the spacing between the rows.

公开(公告)号：US4943343A

公开(公告)日：1990-07-24

申请号：US393199

申请日：1989-08-14

Applicant: Zaher Bardai ,  Randy K. Rolph ,  Arlene E. Lamb ,  Robert T. Longo ,  Arthur E. Manoly ,  Ralph Forman

Inventor： Zaher Bardai ,  Randy K. Rolph ,  Arlene E. Lamb ,  Robert T. Longo ,  Arthur E. Manoly ,  Ralph Forman

IPC: H01J9/02

CPC classification number: H01J9/025

Abstract: Conical field emitter elements are formed on a surface of a substrate after which a layer of metal is deposited on top of the substrate surface and over the field emitter elements. A layer of oxide is then deposited over the metal layer. Another layer of metal is deposited over the layer of oxide to form a gate metal layer. A layer of photoresist is then deposited over the gate metal layer. The layer of photoresist is then plasma etched in an oxygen atmosphere to cause portions of the photoresist above respective field emitter elements to be removed and provide self-aligned holes in the photoresist over each of the field emitter elements. The size of the holes may be controlled by appropriately controlling process parameter, including plasma etching time and power and/or initial photoresist thickness. The exposed gate metal layer is etched using the layer of photoresist as a mask. The photoresist layer is removed, and the layer of oxide is etched to expose the field emitter elements. Another oxide layer and an anode metal layer also may be formed over the gate metal layer to produce a self-aligned triode structure.

Abstract translation: 锥形场发射极元件形成在衬底的表面上，之后在衬底表面的顶部和场发射极元件上沉积金属层。 然后在金属层上沉积一层氧化物。 另一层金属沉积在氧化物层上以形成栅极金属层。 然后在栅极金属层上沉积一层光致抗蚀剂。 然后在氧气氛中等离子体蚀刻光致抗蚀剂层，以使去除各自场致发射体元件上的光致抗蚀剂的部分被去除，并在每个场发射体元件上的光致抗蚀剂中提供自对准的孔。 孔的尺寸可以通过适当地控制工艺参数来控制，包括等离子体蚀刻时间和功率和/或初始光致抗蚀剂厚度。 使用光致抗蚀剂层作为掩模蚀刻暴露的栅极金属层。 去除光致抗蚀剂层，并蚀刻氧化层以露出场发射体元件。 也可以在栅极金属层上形成另一氧化物层和阳极金属层，以产生自对准三极管结构。

公开(公告)号：US5083958A

公开(公告)日：1992-01-28

申请号：US711222

申请日：1991-06-06

Applicant: Robert T. Longo ,  Zaher Bardai ,  Arthur E. Manoly ,  Ralph Forman ,  Randy K. Rolph

Inventor： Robert T. Longo ,  Zaher Bardai ,  Arthur E. Manoly ,  Ralph Forman ,  Randy K. Rolph

IPC: H01J1/304 ,  H01J9/39 ,  H01J21/10

CPC classification number: H01J1/3042 ,  H01J21/105 ,  H01J9/39 ,  H01J2209/3893

Abstract: Outgassed materials liberated in spaces between pointed field emitter tips and an electrode structure during electrical operation of a field emitter device are vented through passageways to a pump or gettering material provided in a separate space. The passageways may include channels formed through an insulating layer between a base for the field emitters, and the electrode structure, with the channels interconnecting adjacent spaces in a row direction. Where the electrode structure includes a gate electrode layer and an anode layer, similar channels may be formed through an insulator layer provided therebetween. The field emitters may be formed in an arrangement of rows and columns, with the spacing between the columns smaller than the spacing between the rows. Holes are formed by anisotropic etching through the anode, gate electrode, and insulator layers down to the base. Subsequent isotropic etching of the insulator layers through the holes in the anode and gate electrode layers is controlled to cause sufficient undercutting in the insulator layers that adjacent holes merge together only in the row direction to form the channels.

Abstract translation: 在场发射器装置的电气操作期间在尖的场发射器尖端和电极结构之间的空间中释放的除气材料通过通道排放到设置在单独空间中的泵或吸气材料。 通道可以包括通过用于场致发射体的基底之间的绝缘层形成的通道和电极结构，其中通道将相邻空间沿行方向互连。 在电极结构包括栅电极层和阳极层的情况下，可以通过设置在其间的绝缘体层形成类似的沟道。 场发射器可以以行和列的布置形成，列之间的间隔小于行之间的间隔。 孔通过各向异性蚀刻形成，通过阳极，栅极电极和绝缘体层向下到底部。 通过阳极和栅极电极层中的孔进行绝缘体层的后续各向同性蚀刻，以在绝缘体层中引起足够的底切，相邻的孔仅在行方向上合并以形成沟道。

公开(公告)号：US4349424A

公开(公告)日：1982-09-14

申请号：US264378

申请日：1981-05-15

Applicant: James S. Sovey ,  Ralph Forman ,  Arthur N. Curren ,  Edwin G. Wintucky

Inventor： James S. Sovey ,  Ralph Forman ,  Arthur N. Curren ,  Edwin G. Wintucky

IPC: C04B41/00 ,  C04B41/80 ,  H01J25/02 ,  C23C15/00

CPC classification number: C04B41/009 ,  C04B41/0027 ,  C04B41/80 ,  H01J25/02

Abstract: A specially textured surface of pyrolytic graphite exhibits extremely low yields of secondary electrons and reduced numbers of reflected primary electrons after impingement of high energy primary electrons.An ion flux having an energy between 500 eV and 1000 eV and a current density between 1.0 mA/cm.sup.2 and 6.0 mA/cm.sup.2 produces surface roughening or texturing which is in the form of needles or spines.Such textured surfaces are especially useful as anode collector plates in high efficiency electron tube devices.

Abstract translation: 热解石墨的特殊纹理表面表现出非常低的二次电子产率，并且在高能量一次电子碰撞后反射的一次电子数量减少。 具有500eV至1000eV之间的能量和1.0mA / cm 2至6.0mA / cm 2之间的电流密度的离子通量产生呈针状或棘形形式的表面粗糙化或纹理化。 这种纹理表面在高效电子管装置中特别适用于阳极集电板。

公开(公告)号：US2608996A

公开(公告)日：1952-09-02

申请号：US24444851

申请日：1951-08-30

Applicant: RALPH FORMAN

Inventor： RALPH FORMAN

IPC: F16K1/00

CPC classification number: F16K1/00 ,  Y10T137/6606 ,  Y10T137/7737

公开(公告)号：US5038070A

公开(公告)日：1991-08-06

申请号：US457208

申请日：1989-12-26

Applicant: Zaher Bardai ,  Mario A. Barillas ,  Arthur E. Manoly ,  Robert T. Longo ,  Ralph Forman

Inventor： Zaher Bardai ,  Mario A. Barillas ,  Arthur E. Manoly ,  Robert T. Longo ,  Ralph Forman

IPC: H01J9/02 ,  H01J1/30 ,  H01J1/304 ,  H01J19/24 ,  H01J21/10

CPC classification number: H01J1/3042 ,  H01J9/025

Abstract: A plurality of field emitters in the form of hollow, upstanding pointed cones or pyramids formed by a molding process extend from a surface of an electrically conductive layer. An electrically conductive mesh is adhered to an opposite surface of the conductive layer by a high temperature brazing process in electrical connection with the conductive layer. The mesh provides a strong metal base with good thermal conductivity for mounting. Additional elements such as a gate and anode structure may be formed on the conductive layer in alignment with the field emitters to form a field emitting triode array or the like.

Abstract translation: 通过模制工艺形成的中空的直立尖锥体或金字塔形式的多个场致发射体从导电层的表面延伸。 通过与导电层电连接的高温钎焊工艺将导电网粘附到导电层的相对表面上。 网格提供强大的金属基底，具有良好的导热性，可用于安装。 诸如栅极和阳极结构的附加元件可以形成在与场致发射体对准的导电层上，以形成场发射三极管阵列等。

公开(公告)号：US4687964A

公开(公告)日：1987-08-18

申请号：US732321

申请日：1985-05-09

Applicant: Ben T. Ebihara ,  Ralph Forman

Inventor： Ben T. Ebihara ,  Ralph Forman

IPC: H01J1/304 ,  H01J1/20 ,  H01J1/30

CPC classification number: H01J1/304

Abstract: A field emission cathode 12 is positioned in a pair of intersecting cross grooves 30, 32 in the end of a ceramic tube 14 by a metal end cap 24. A spring 34 in electrical contact with the base of the cathode provides the necessary pressure to maintain continuous circumferential electrical contact between the gate film and a raised edge 38 on the end cap. With this structure the cathode chip is self-centering and easily replaceable. Also the gate film of the cathode is not abraded or rubbed during installation, and the holder is readily degassed.

Abstract translation: 场致发射阴极12通过金属端帽24定位在陶瓷管14的端部中的一对相交的交叉槽30,32中。与阴极的基部电接触的弹簧34提供必要的压力以保持 栅极膜与端盖上的凸起边缘38之间的连续周向电接触。 采用这种结构，阴极芯片是自定心的，易于更换。 此外，阴极的栅极膜在安装期间不会磨损或摩擦，并且保持器容易脱气。

公开(公告)号：US4417175A

公开(公告)日：1983-11-22

申请号：US364072

申请日：1982-03-31

Applicant: Arthur N. Curren ,  Ralph Forman ,  James S. Sovey ,  Edwin G. Wintucky

Inventor： Arthur N. Curren ,  Ralph Forman ,  James S. Sovey ,  Edwin G. Wintucky

IPC: C04B41/00 ,  C04B41/80 ,  H01J25/02 ,  H01J23/02

CPC classification number: C04B41/0027 ,  C04B41/80 ,  H01J25/02

Abstract: A specially textured surface of pyrolytic graphite exhibits extremely low yields of secondary electrons and reduced numbers of reflected primary electrons after impingement of high energy primary electrons. Electrode plates of this material are used in multistage depressed collectors.An ion flux having an energy between 500 eV and 1000 eV and a current density between 1.0 mA/cm.sup.2 and 6.0 mA/cm.sup.2 produces surface roughening or texturing which is in the form of needles or spires.Such textured surfaces are especially useful as anode collector plates in high efficiency electron tube devices.

Abstract translation: 热解石墨的特殊纹理表面表现出非常低的二次电子产率，并且在高能量一次电子碰撞后反射的一次电子数量减少。 这种材料的电极板用于多级凹陷式收集器。 具有500eV至1000eV之间的能量和1.0mA / cm 2至6.0mA / cm 2之间的电流密度的离子通量产生呈针状或尖形的表面粗糙化或纹理化。 这种纹理表面在高效电子管装置中特别适用于阳极集电板。

公开(公告)号：US2935624A

公开(公告)日：1960-05-03

申请号：US53091555

申请日：1955-08-26

Applicant: RALPH FORMAN

Inventor： RALPH FORMAN

IPC: H01J1/13

CPC classification number: H01J1/13

公开(公告)号：US5065070A

公开(公告)日：1991-11-12

申请号：US696399

申请日：1991-05-06

Applicant: Robert T. Longo ,  Mario A. Barillas ,  Ralph Forman

Inventor： Robert T. Longo ,  Mario A. Barillas ,  Ralph Forman

IPC: H01J1/28 ,  H01J9/04

CPC classification number: H01J1/28 ,  H01J9/047

Abstract: A low work function surface for a dispenser cathode structure. The cathode structure comprising a heater and an electron emitting surface substrate or core composed of a porous tungsten matrix impregnated with a barium containing impregnant distributed therethrough. The structure is made by a method in which a nanometer thick layer of scandium oxide is sputtered onto the outermost surface of the impregnated tungsten core, or substrate, and then oxidized by exposing the sputtered scandium oxide surface layer to an oxygen atmosphere. The oxidized surface layer is activated by turning on the heater, for example, to cause the release of a small portion of the barium in the barium-containing impregnant. Some of the released barium migrates into the scandium oxide surface layer to form a monolayer of barium oxide on at least a portion thereof.

Abstract translation: 用于分配器阴极结构的低功函数表面。 阴极结构包括加热器和由浸渍有分布在其中的含钡浸渍剂的多孔钨基体构成的电子发射表面基底或芯。 该结构通过将纳米厚的氧化钪层溅射到浸渍的钨芯或衬底的最外表面上，然后通过将溅射的氧化钪表面层暴露于氧气氛而被氧化的方法制成。 通过打开加热器来激活氧化的表面层，例如，使含钡浸渍剂中的钡的一小部分释放。 一些释放的钡迁移到氧化钪表面层中，以在其至少一部分上形成氧化钡单层。