Method of forming a vacuum micro-electronic device
    1.
    发明授权
    Method of forming a vacuum micro-electronic device 失效
    形成真空微电子器件的方法

    公开(公告)号:US06406926B1

    公开(公告)日:2002-06-18

    申请号:US09930241

    申请日:2001-08-15

    CPC classification number: B82Y10/00 H01J9/025 H01J2201/30469

    Abstract: A vacuum microelectronic device (10,40) is formed by applying a first conductor (13,14) to a substrate (11) and utilizing the first conductor (13,14) to expose a dielectric material (18) and a second conductive material (19) from a back surface of the substrate (11). A second conductor (29) and a dielectric (28) are formed from the second conductive material (19) and the dielectric material (18), respectively. This method self-aligns the dielectric (28) and the second conductor (29) with the first conductor (13,14). Electron emitters (31,33) of the vacuum microelectronic device (10,40) are formed on the first conductor (13,14).

    Abstract translation: 通过将第一导体(13,14)施加到衬底(11)并利用第一导体(13,14)暴露电介质材料(18)和第二导电材料(18)形成真空微电子器件(10,40) (19)从所述基板(11)的背面延伸。 第二导体(29)和电介质(28)分别由第二导电材料(19)和电介质材料(18)形成。 该方法使电介质(28)和第二导体(29)与第一导体(13,14)自对准。 真空微电子器件(10,40)的电子发射体(31,33)形成在第一导体(13,14)上。

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