公开(公告)号：US5368880A

公开(公告)日：1994-11-29

申请号：US446760

申请日：1989-12-06

申请人： Richard C. McKee ,  Sandra L. Baumler ,  Thomas R. Schimert

发明人： Richard C. McKee ,  Sandra L. Baumler ,  Thomas R. Schimert

IPC分类号： B23K35/00 ,  B23K35/30 ,  C04B37/00 ,  C23C14/18 ,  H01L21/36 ,  H01L21/46 ,  H01L23/482 ,  B05D5/12 ,  C23C16/00

CPC分类号： H01L23/4825 ,  B23K35/001 ,  B23K35/3013 ,  C04B37/026 ,  C23C14/18 ,  H01L21/2007 ,  H01L21/46 ,  C04B2235/6567 ,  C04B2237/122 ,  C04B2237/125 ,  C04B2237/16 ,  C04B2237/30 ,  C04B2237/36 ,  C04B2237/52 ,  C04B2237/708 ,  C04B2237/72 ,  C04B2237/86 ,  H01L2224/04026 ,  H01L2924/01019 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/10253 ,  Y10T29/49156

摘要： A method of forming a eutectic bond, of Cadmium Telluride to Sapphire utilizing the Gold/Silicon eutectic bonding of the Cadmium Telluride to the Sapphire. A multi-layer structure of: Chromium which provides adhesion to the Cadmium Telluride; a Titanium layer which functions as a diffusion barrier to the Gold, and a Gold layer are sequentially evaporated on the Cadmium Telluride; a separate multilayered structure of: Silicon grown on Sapphire, and Gold evaporated upon the Silicon. These two multilayered structures are then eutectically bonded. This method enables the expansion coefficient of the eutectic layer to be tailored through the Gold concentration to match that of the Cadmium Telluride. This method also allows the bonding stress to be confined between the Gold/Silicon eutectic and the Sapphire substrate, eliminating the bonding stress in the Cadmium Telluride. Also, due to the precision of the thickness of the evaporated layers, the bonded substrates are inherently planar and parallel.

摘要翻译： 使用碲化镉与蓝宝石的金/硅共晶结合形成碲化镉到蓝宝石的共晶键的方法。 多层结构：提供与碲化镉的粘附性的铬; 用作金的扩散阻挡层的钛层和金层在碲化镉上依次蒸发; 一个单独的多层结构：在蓝宝石上生长的硅，并且在硅上蒸发金。 然后将这两个多层结构共晶结合。 该方法使得通过金浓度来调整共晶层的膨胀系数以匹配碲化镉的膨胀系数。 该方法还允许将键合应力限制在金/硅共晶和蓝宝石衬底之间，消除了碲化镉中的结合应力。 此外，由于蒸发层的厚度的精度，结合的衬底固有地是平面的并且平行的。

公开(公告)号：US5559331A

公开(公告)日：1996-09-24

申请号：US632790

申请日：1990-12-24

申请人： Richard C. McKee

发明人： Richard C. McKee

IPC分类号： G01J5/28 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/0352

CPC分类号： H01L31/02024 ,  G01J5/28 ,  H01L31/0232 ,  H01L31/03529 ,  Y02E10/50

摘要： A resonant, photoconductive detector for infrared radiation in which a reduced-volume pattern of the photoconductor permits impedance-matching to free space. The photoconductor pattern is a split-ring pattern, typically made of HgCdTe, which is virtually cylindrically symmetric, yielding a non-polarization-sensitive response. The region below the patterned photoconductor is a quarter-wavelength resonant cavity type structure. The ohmic contacts are conductively distanced from one another by use of the split-ring pattern. Spacing dimensions are slightly less than a wavelength for the infrared wavelengths to be absorbed; but ring-width dimensions of the photoconductor are substantially less to effect the volume reduction and the corresponding detectivity and radiation-hardness improvements. The essentially cylindrical isotropic pattern eases fabrication by averaging etching nonuniformities.

摘要翻译： 用于红外辐射的共振光导检测器，其中光电导体的体积减小的图案允许阻抗匹配到自由空间。 光电导体图案是分裂环图案，通常由HgCdTe制成，其实际上是圆柱对称的，产生非偏振敏感的响应。 图案化感光体下面的区域是四分之一波长的谐振腔型结构。 欧姆接触通过使用分裂环图案彼此导电地间隔开。 间距尺寸略小于要吸收的红外波长的波长; 但是光电导体的环宽度尺寸显着较小，以致影响体积减小和相应的检测率和辐射硬度的改善。 基本上圆柱形的各向同性图案通过平均蚀刻不均匀性来简化制造。

公开(公告)号：US5470761A

公开(公告)日：1995-11-28

申请号：US119640

申请日：1993-09-13

申请人： Richard C. McKee ,  Sandra L. Baumler

发明人： Richard C. McKee ,  Sandra L. Baumler

IPC分类号： H01L27/146 ,  H01L31/16

CPC分类号： H01L27/1467 ,  Y10S148/135

摘要： A process for fabricating a front surface resonant mesh array detector produces a detector of reduced size. The reduced size results in enhanced responsivity, and minimizes thermal stress between the detector and typical array substrates, enabling fabrication of arrays using front surface resonant mesh array detectors.

摘要翻译： 用于制造前表面共振网阵列检测器的方法产生尺寸减小的检测器。 减小的尺寸导致增强的响应性，并且最小化检测器和典型阵列基板之间的热应力，使得能够使用前表面共振网格阵列检测器制造阵列。

公开(公告)号：US5479018A

公开(公告)日：1995-12-26

申请号：US348939

申请日：1989-05-08

申请人： Richard C. McKee ,  Leslie L. Thompson ,  Dayton D. Eden ,  William E. Case ,  Thomas R. Schimert

发明人： Richard C. McKee ,  Leslie L. Thompson ,  Dayton D. Eden ,  William E. Case ,  Thomas R. Schimert

IPC分类号： G01J5/20 ,  H01L27/144 ,  H01L31/0216 ,  H01L31/0232 ,  H01L27/14

CPC分类号： H01L27/1446 ,  G01J5/20 ,  H01L27/1462 ,  H01L31/02161 ,  H01L31/0232

摘要： An infrared detector, having improved infrared absorptance and operating performance at or near ambient as well as the cryogenic temperature ranges. The infrared detector, in one embodiment includes a multi-filament HgCdTe detector region mounted upon a CdTe substrate, a metallic reflective region placed in front of, or behind, the HgCdTe detection region forming a resonant layer between the reflective region and HgCdTe. Electrical contacts operable to detect the change in resistance of the HgCdTe detector filaments are connected to the detector region. Embodiment for a back surface illuminated detector device is described for use in the 8 micron to 12 micron, longwave infrared (LWIR) range. Improved operation in the LWIR range at higher temperatures results in detector arrays having decreased cooling needs and infrared detector systems produced with a significant decrease in overall system weight.

摘要翻译： 一种红外检测器，在环境温度或接近环境温度范围内具有改进的红外吸收率和操作性能。 在一个实施例中，红外检测器包括安装在CdTe衬底上的复丝HgCdTe检测器区域，放置在形成反射区域和HgCdTe之间的谐振层的HgCdTe检测区域的前面或后面的金属反射区域。 可操作以检测HgCdTe检测器丝的电阻变化的电触点连接到检测器区域。 描述了用于8微米至12微米长波红外（LWIR）范围的后表面照明检测器装置的实施例。 在较高温度下改进的LWIR范围内的操作导致检测器阵列具有降低的冷却需求，并且红外检测器系统产生的总体系统重量显着降低。