公开(公告)号：US20050285138A1

公开(公告)日：2005-12-29

申请号：US11165848

申请日：2005-06-17

申请人： Robert Burgener ,  Roger Felix ,  Gary Renlund

发明人： Robert Burgener ,  Roger Felix ,  Gary Renlund

IPC分类号： C01G9/02 ,  H01L21/00 ,  H01L21/28 ,  H01L21/31 ,  H01L21/3115 ,  H01L21/316 ,  H01L21/363 ,  H01L21/365 ,  H01L21/469 ,  H01L23/58 ,  H01L27/15 ,  H01L29/225 ,  H01L29/26 ,  H01L31/0296 ,  H01L31/0328 ,  H01L31/12 ,  H01L33/28 ,  H01S5/30 ,  H01S5/327 ,  H01S5/347

CPC分类号： H01L21/02551 ,  B82Y20/00 ,  C01G9/02 ,  C01P2006/40 ,  C30B25/02 ,  C30B29/16 ,  C30B29/48 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02568 ,  H01L21/02579 ,  H01L21/3115 ,  H01L21/316 ,  H01L23/5329 ,  H01L29/225 ,  H01L31/02963 ,  H01L33/025 ,  H01L33/28 ,  H01L33/285 ,  H01L2924/0002 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/327 ,  H01S5/347 ,  H01L2924/00

摘要： A persistent p-type group II-VI semiconductor material is disclosed containing atoms of group II elements, atoms of group VI elements, and a p-type dopant which replaces atoms of the group VI element in the semiconductor material. The p-type dopant has a negative oxidation state. The p-type dopant causes formation of vacancies of atoms of the group II element in the semiconductor material. Fabrication methods and solid state devices containing the group II-VI semiconductor material are disclosed.

摘要翻译： 公开了一种持续性的p型II-VI族半导体材料，其包含II族元素的原子，VI族元素的原子和替代半导体材料中的VI族元素的原子的p型掺杂剂。 p型掺杂剂具有负氧化态。 p型掺杂剂导致在半导体材料中形成II族元素的原子空位。 公开了含有II-VI族半导体材料的制造方法和固态器件。

公开(公告)号：US20070102709A1

公开(公告)日：2007-05-10

申请号：US11620325

申请日：2007-01-05

申请人： Robert Burgener ,  Roger Felix ,  Gary Renlund

发明人： Robert Burgener ,  Roger Felix ,  Gary Renlund

IPC分类号： H01L29/22 ,  H01L29/15

CPC分类号： H01L33/285 ,  C30B23/02 ,  C30B25/02 ,  C30B29/48 ,  H01L21/0237 ,  H01L21/02554 ,  H01L21/02557 ,  H01L21/02579 ,  H01L21/02628 ,  H01L21/02631 ,  H01L29/22 ,  H01L29/225 ,  H01L29/227

摘要： A persistent p-type group II-VI semiconductor material is disclosed. The group II-VI semiconductor includes atoms of group II elements, atoms of group VI elements, and one or more p-type dopants. The p-type dopant concentration is sufficient to render the group II-VI semiconductor material in a single crystal form. The semiconductor resistivity is less than about 0.5 ohm·cm, and the carrier mobility is greater than about 0.1 cm2/V·s. Group II elements include zinc, cadmium, the alkaline earth metals such as beryllium, magnesium calcium, strontium, and barium, and mixtures thereof. Group VI elements include oxygen, sulfur, selenium, tellurium, and mixtures thereof. P-type dopants include, but are not limited to, nitrogen, phosphorus, arsenic, antimony, chalcogenides of the foregoing, and mixtures thereof.

摘要翻译： 公开了一种持续性p型II-VI族半导体材料。 II-VI族半导体包括II族元素的原子，VI族元素的原子和一种或多种p型掺杂剂。 p型掺杂剂浓度足以使II-VI族半导体材料成为单晶形式。 半导体电阻率小于约0.5欧姆·厘米，载流子迁移率大于约0.1厘米2 / II族元素包括锌，镉，碱土金属如铍，镁钙，锶和钡，及其混合物。 VI族元素包括氧，硫，硒，碲及其混合物。 P型掺杂剂包括但不限于上述的氮，磷，砷，锑，硫族化物，及其混合物。

公开(公告)号：US20050285119A1

公开(公告)日：2005-12-29

申请号：US11165847

申请日：2005-06-17

申请人： Robert Burgener ,  Roger Felix ,  Gary Renlund

发明人： Robert Burgener ,  Roger Felix ,  Gary Renlund

IPC分类号： C01G9/02 ,  H01L21/00 ,  H01L21/28 ,  H01L21/31 ,  H01L21/3115 ,  H01L21/316 ,  H01L21/363 ,  H01L21/365 ,  H01L21/469 ,  H01L23/58 ,  H01L27/15 ,  H01L29/225 ,  H01L29/26 ,  H01L31/0296 ,  H01L31/0328 ,  H01L31/12 ,  H01L33/28 ,  H01S5/30 ,  H01S5/327 ,  H01S5/347 ,  H01L33/00

CPC分类号： H01L21/02551 ,  B82Y20/00 ,  C01G9/02 ,  C01P2006/40 ,  C30B25/02 ,  C30B29/16 ,  C30B29/48 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02568 ,  H01L21/02579 ,  H01L21/3115 ,  H01L21/316 ,  H01L23/5329 ,  H01L29/225 ,  H01L31/02963 ,  H01L33/025 ,  H01L33/28 ,  H01L33/285 ,  H01L2924/0002 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/327 ,  H01S5/347 ,  H01L2924/00

摘要： Methods of fabricating semiconductor p-n junctions and semiconductor devices containing p-n junctions are disclosed in which the p-n junctions contain concentration profiles for the p-type and n-type dopants that are controllable and independent of a dopant diffusion profile. The p-n junction is disposed between a layer of semiconductor doped with a p-type dopant and a layer of semiconductor doped with an n-type dopant. The p-n junction is fabricated using a crystal growth process that allows dynamic control and variation of both p-type and n-type dopant concentrations during the crystal growth process.

摘要翻译： 公开了制造半导体p-n结的方法和包含p-n结的半导体器件的方法，其中p-n结含有可控制且与掺杂剂扩散分布无关的p型和n型掺杂剂的浓度分布。 p-n结设置在掺杂有p型掺杂剂的半导体层和掺杂有n型掺杂剂的半导体层之间。 使用晶体生长工艺制造p-n结，其允许在晶体生长过程期间动态控制和p型和n型掺杂剂浓度的变化。

公开(公告)号：US4000631A

公开(公告)日：1977-01-04

申请号：US545261

申请日：1975-01-30

申请人： Reinhold Alvin Drews ,  Frank Robert Burgener, Jr.

发明人： Reinhold Alvin Drews ,  Frank Robert Burgener, Jr.

IPC分类号： D06F23/04 ,  D06F37/24

CPC分类号： D06F23/04 ,  D06F37/24 ,  Y10T403/7058

摘要： A receptacle drive coupling atop the spin drive tube in a washing machine assembly of the vertical axis type has a hollow drive block with a circumferential contact surface of reduced area on its downwardly flared lower part. A lock nut including a downwardly extending lower lip portion is threadedly received at the upper part of the drive block. A hollow center post of the receptacle is forced into proper alignment over the drive block by the lock nut and is firmly aligned with respect to the spin tube by the raised contact surface on the drive block and the lip portion of the lock nut.

摘要翻译： 在垂直轴型洗衣机组件中耦合在旋转驱动管上方的插座驱动器具有中空驱动块，在其向下扩张的下部具有减小的面积的周向接触表面。 包括向下延伸的下唇部分的锁定螺母被螺纹地接收在驱动块的上部。 插座的中空中心柱通过锁紧螺母被迫在驱动块上适当对准，并且通过驱动块上的凸起接触表面和锁紧螺母的唇形部分相对于旋转管子牢固地对准。

公开(公告)号：US20050287817A1

公开(公告)日：2005-12-29

申请号：US11156264

申请日：2005-06-17

申请人： Robert Burgener ,  Roger Felix ,  Gary Renlund

发明人： Robert Burgener ,  Roger Felix ,  Gary Renlund

IPC分类号： C01G9/02 ,  H01L21/00 ,  H01L21/28 ,  H01L21/31 ,  H01L21/3115 ,  H01L21/316 ,  H01L21/363 ,  H01L21/365 ,  H01L21/469 ,  H01L23/58 ,  H01L27/15 ,  H01L29/225 ,  H01L29/26 ,  H01L31/0296 ,  H01L31/0328 ,  H01L31/12 ,  H01L33/28 ,  H01S5/30 ,  H01S5/327 ,  H01S5/347

CPC分类号： H01L21/02551 ,  B82Y20/00 ,  C01G9/02 ,  C01P2006/40 ,  C30B25/02 ,  C30B29/16 ,  C30B29/48 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02568 ,  H01L21/02579 ,  H01L21/3115 ,  H01L21/316 ,  H01L23/5329 ,  H01L29/225 ,  H01L31/02963 ,  H01L33/025 ,  H01L33/28 ,  H01L33/285 ,  H01L2924/0002 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/327 ,  H01S5/347 ,  H01L2924/00

摘要： Low dielectric constant group II-VI compounds, such as zinc oxide, and fabrication methods are disclosed. Low dielectric constant insulator materials are fabricated by doping zinc oxide with at least one mole % p-type dopant ion. Low dielectric constant zinc oxide insulator materials are fabricated by doping zinc oxide with silicon having a concentration of at least 1017 atoms/cm3. Low dielectric zinc oxide insulator materials are fabricated by doping zinc oxide with a dopant ion having a concentration of at least about 1018 atoms/cm3, followed by heating to a temperature which converts the zinc oxide to an insulator. The temperature varies depending upon the choice of dopant. For arsenic, the temperature is at least about 450° C.; for antimony, the temperature is at least about 650° C. The dielectric constant of zinc oxide semiconductor is lowered by doping zinc oxide with a dopant ion at a concentration at least about 1018 to about 1019 atoms/cm3.

摘要翻译： 公开了诸如氧化锌的低介电常数组II-VI化合物和制造方法。 低介电常数绝缘体材料通过用至少一摩尔％p型掺杂剂离子掺杂氧化锌来制造。 低介电常数氧化锌绝缘体材料是通过用浓度至少为10 17原子/ cm 3的硅掺杂氧化锌来制造的。 低介电氧化锌绝缘体材料通过掺杂浓度为至少约10 18原子/ cm 3的掺杂剂离子氧化锌制造，然后加热至温度 其将氧化锌转化为绝缘体。 温度根据掺杂剂的选择而变化。 对于砷，温度至少为450°C。 对于锑，温度为至少约650℃。氧化锌半导体的介电常数通过掺杂浓度为至少约10至约10的掺杂剂离子氧化锌而降低 > 19原子/ cm 3。