SYSTEMS AND METHODS FOR CO-DOPING WIDE BAND GAP MATERIALS
    1.
    发明申请
    SYSTEMS AND METHODS FOR CO-DOPING WIDE BAND GAP MATERIALS 有权
    用于同时切割宽带材料的系统和方法

    公开(公告)号:US20110237057A1

    公开(公告)日:2011-09-29

    申请号:US13154000

    申请日:2011-06-06

    IPC分类号: H01L21/265

    摘要: Various embodiments of the present disclosure provide a method of simultaneously co-doping a wide band gap material with p-type and n-type impurities to create a p-n junction within the resulting wide band gap composite material. The method includes disposing a sample comprising a dopant including both p-type and n-type impurities between a pair of wide band gap material films and disposing the sample between a pair of opposing electrodes; and subjecting the sample to a preselected vacuum; and heating the sample to a preselected temperature; and applying a preselected voltage across the sample; and subjecting the sample to at least one laser beam having a preselected intensity and a preselected wavelength, such that the p-type and n-type impurities of the dopant substantially simultaneously diffuse into the wide band gap material films resulting in a wide band gap compound material comprising a p-n junction.

    摘要翻译: 本公开的各种实施例提供了一种同时将宽带隙材料与p型和n型杂质共掺杂以在所得宽带隙复合材料内产生p-n结的方法。 该方法包括将包括p型和n型杂质的掺杂剂的样品设置在一对宽带隙材料膜之间并将样品设置在一对相对的电极之间; 并对样品进行预选的真空; 并将样品加热至预选温度; 并在样品上施加预选电压; 并且对样品进行至少一种具有预选强度和预选波长的激光束,使得掺杂剂的p型和n型杂质基本上同时扩散到宽带隙材料膜中,导致宽带隙化合物 包含pn结的材料。

    Deep level transient spectrometer
    2.
    发明授权
    Deep level transient spectrometer 有权
    深层瞬态光谱仪

    公开(公告)号:US09329223B2

    公开(公告)日:2016-05-03

    申请号:US13540151

    申请日:2012-07-02

    IPC分类号: G01R31/00 G01R31/26

    CPC分类号: G01R31/2648

    摘要: A method for detecting surface and bulk deep states in semiconductor materials is provided. In various embodiments, the method comprises configuring a detection circuit of charge based deep level transient spectrometer in one of a parallel mode and a series mode by controlling the configuration of a switching circuit of the detection circuit. The method additionally comprises generating digitized voltage charge outputs of a device under test utilizing the detection circuit as controlled via execution of an analog-to-digital conversion and timing program by a control system of the charge based deep level transient spectrometer. Furthermore, the method comprises obtaining desired information about deep level transients of the device under test based on the digitized voltage charge outputs via execution of a control system operable to execute a Q-DLTS data analysis program by the control system.

    摘要翻译: 提供了一种用于检测半导体材料中的表面和体积深度状态的方法。 在各种实施例中,该方法包括通过控制检测电路的开关电路的配置来配置基于并联模式和串联模式之一的基于电荷的深度级瞬态光谱仪的检测电路。 该方法还包括通过由基于电荷的深度级瞬态光谱仪的控制系统执行模数转换和定时程序来控制的检测电路产生被测器件的数字化电压电荷输出。 此外,该方法包括通过执行可控制系统执行Q-DLTS数据分析程序的控制系统,通过基于数字化的电压电荷输出来获得关于被测设备的深电平瞬变的期望信息。

    Electrostatic thin film chemical and biological sensor
    3.
    发明授权
    Electrostatic thin film chemical and biological sensor 有权
    静电薄膜化学和生物传感器

    公开(公告)号:US07649359B2

    公开(公告)日:2010-01-19

    申请号:US11639405

    申请日:2006-12-13

    IPC分类号: G01N27/00

    CPC分类号: G01N27/60

    摘要: A chemical and biological agent sensor includes an electrostatic thin film supported by a substrate. The film includes an electrostatic charged surface to attract predetermined biological and chemical agents of interest. A charge collector associated with said electrostatic thin film collects charge associated with surface defects in the electrostatic film induced by the predetermined biological and chemical agents of interest. A preferred sensing system includes a charge based deep level transient spectroscopy system to read out charges from the film and match responses to data sets regarding the agents of interest. A method for sensing biological and chemical agents includes providing a thin sensing film having a predetermined electrostatic charge. The film is exposed to an environment suspected of containing the biological and chemical agents. Quantum surface effects on the film are measured. Biological and/or chemical agents can be detected, identified and quantified based on the measured quantum surface effects.

    摘要翻译: 化学和生物剂传感器包括由基底支撑的静电薄膜。 该膜包括静电带电表面以吸引预期的感兴趣的生物和化学试剂。 与所述静电薄膜相关联的电荷收集器收集与由感兴趣的预定生物和化学试剂引起的静电膜中的表面缺陷相关的电荷。 优选的感测系统包括基于电荷的深度级瞬态光谱系统,用于从电影中读出费用,并且将关于感兴趣的代理的数据集的响应匹配。 用于感测生物和化学试剂的方法包括提供具有预定静电荷的薄的感测膜。 该片暴露于怀疑含有生物和化学物质的环境。 测量膜上的量子表面效应。 可以基于测量的量子表面效应来检测,鉴定和定量生物和/或化学试剂。

    Method for contact diffusion of impurities into diamond and other crystalline structures and products
    4.
    发明授权
    Method for contact diffusion of impurities into diamond and other crystalline structures and products 失效
    金属和其他晶体结构和产品中杂质接触扩散的方法

    公开(公告)号:US06527854B1

    公开(公告)日:2003-03-04

    申请号:US09719736

    申请日:2000-12-14

    IPC分类号: C30B2508

    CPC分类号: C30B31/02 C30B29/04 C30B31/00

    摘要: A low free energy method for more rapidly diffusing an impurity as exemplified by boron, into a natural or synthetic diamond or other crystalline element in powdered or granular form, without degradation of the crystalline structure. The present method includes the steps of providing a mixture of the diamond or other crystalline element and the impurity in a solid phase; treating the mixture to bring the impurity into conforming contact with the outer surface of the crystalline element; and heating the mixture to a temperature between about 200° C. and about 2000° C. As an example, a diamond is disclosed having boron as an impurity diffused into the crystalline structure thereof by the present method, at a ratio of from about 0.1 part of the impurity per 1 million parts of the diamond to about 600 parts of the impurity per 1 million parts of the diamond.

    摘要翻译: 一种低自由能方法,用于将如硼例示的杂质更快地扩散成粉末状或颗粒状的天然或合成金刚石或其它结晶元素,而不会降解晶体结构。 本发明的方法包括以下步骤:提供金刚石或其它结晶元素与固相的杂质的混合物; 处理混合物以使杂质与结晶元件的外表面形成一致的接触; 并将混合物加热至约200℃至约2000℃的温度。作为示例,公开了通过本方法将硼作为杂质扩散到其结晶结构中的金刚石以约0.1的比例 部分杂质每百万份钻石至约600份杂质每百万份钻石。

    Deep Level Transient Spectrometer
    5.
    发明申请
    Deep Level Transient Spectrometer 有权
    深层瞬态光谱仪

    公开(公告)号:US20130054177A1

    公开(公告)日:2013-02-28

    申请号:US13540151

    申请日:2012-07-02

    IPC分类号: G01R31/26 G06F19/00

    CPC分类号: G01R31/2648

    摘要: A method for detecting surface and bulk deep states in semiconductor materials is provided. In various embodiments, the method comprises configuring a detection circuit of charge based deep level transient spectrometer in one of a parallel mode and a series mode by controlling the configuration of a switching circuit of the detection circuit. The method additionally comprises generating digitized voltage charge outputs of a device under test utilizing the detection circuit as controlled via execution of an analog-to-digital conversion and timing program by a control system of the charge based deep level transient spectrometer. Furthermore, the method comprises obtaining desired information about deep level transients of the device under test based on the digitized voltage charge outputs via execution of a control system operable to execute a Q-DLTS data analysis program by the control system.

    摘要翻译: 提供了一种用于检测半导体材料中的表面和体积深度状态的方法。 在各种实施例中,该方法包括通过控制检测电路的开关电路的配置来配置基于并联模式和串联模式之一的基于电荷的深度级瞬态光谱仪的检测电路。 该方法还包括通过由基于电荷的深度级瞬态光谱仪的控制系统执行模数转换和定时程序来控制的检测电路产生被测器件的数字化电压电荷输出。 此外,该方法包括通过执行可控制系统执行Q-DLTS数据分析程序的控制系统,通过基于数字化的电压电荷输出来获得关于被测设备的深电平瞬变的期望信息。

    Systems and methods for co-doping wide band gap materials
    7.
    发明授权
    Systems and methods for co-doping wide band gap materials 有权
    共掺杂宽带材料的系统和方法

    公开(公告)号:US08394711B2

    公开(公告)日:2013-03-12

    申请号:US13154000

    申请日:2011-06-06

    IPC分类号: H01L21/22

    摘要: Various embodiments of the present disclosure provide a method of simultaneously co-doping a wide band gap material with p-type and n-type impurities to create a p-n junction within the resulting wide band gap composite material. The method includes disposing a sample comprising a dopant including both p-type and n-type impurities between a pair of wide band gap material films and disposing the sample between a pair of opposing electrodes; and subjecting the sample to a preselected vacuum; and heating the sample to a preselected temperature; and applying a preselected voltage across the sample; and subjecting the sample to at least one laser beam having a preselected intensity and a preselected wavelength, such that the p-type and n-type impurities of the dopant substantially simultaneously diffuse into the wide band gap material films resulting in a wide band gap compound material comprising a p-n junction.

    摘要翻译: 本公开的各种实施例提供了一种同时将宽带隙材料与p型和n型杂质共掺杂以在所得宽带隙复合材料内产生p-n结的方法。 该方法包括将包括p型和n型杂质的掺杂剂的样品设置在一对宽带隙材料膜之间并将样品设置在一对相对的电极之间; 并对样品进行预选的真空; 并将样品加热至预选温度; 并在样品上施加预选电压; 并且对样品进行至少一种具有预选强度和预选波长的激光束,使得掺杂剂的p型和n型杂质基本上同时扩散到宽带隙材料膜中,导致宽带隙化合物 包含pn结的材料。