摘要:
A high frequency transition (10) from a microstrip transmission line (57) to an MMIC coplanar waveguide (41) is provided. The microstrip transmission line (57) is representative of that typically encountered in a high frequency RF module on a first substrate (11). The MMIC coplanar waveguide (41) is representative of that encountered in low cost MMICs fabricated on a semiconductor substrate (56). An interface (15) couples the microstrip transmission line (57) to a mode converter (16). Mode converter (16) provides impedance mismatch compensation and coplanar waveguide propagation mode conditions for a connector coplanar waveguide (34) which connects from the first substrate (11) to the semiconductor substrate (56). An impedance transformer (40) provides additional impedance mismatch compensation on the semiconductor substrate (39) to complete the transition.
摘要:
A complimentary switched amplifier transceiver (10) is provided which offers performance advantages and reduces system complexity over conventional half-duplex transceivers by using complimentary switched amplifiers for eliminating switches. Power output to a channel transition (31) from a transmit amplifier (26) is not degraded by a switch insertion loss in a transmit mode. Receiver noise figure is not degraded due to the switch insertion loss from the channel transition (31) to a receive amplifier (27). Switch devices and their associated control lines are eliminated, reducing circuit complexity for complimentary switched amplifier circuits such as a combined amplifier switch (12) and a first bi-directional amplifier (22).
摘要:
A method for providing local matching elements for adjusting the characteristic impedance of local transmission line segments to more closely match the input or output impedance of the particular devices to which they couple. The method includes the step of providing a conductive bridge over the active lead of the transmission line, thereby lowering its characteristic impedance. The method can be applied to narrow transmission line segments needed to make contact to small active devices and/or MMIC's and which otherwise exhibit a substantial impedance mismatch with the small elements.
摘要:
The performance of microwave coplanar and other circuit boards is improved by providing local matching elements for adjusting the characteristic impedance of local transmission line segments to better match the input or output impedance of the particular devices to which they couple. This is accomplished by providing a conductive bridge over the active lead of the transmission line, thereby lowering its characteristic impedance. This is very useful for narrow transmission line segments needed to make contact to small active device and/or MMIC's and which otherwise exhibit a substantial impedance mismatch with such small elements.
摘要:
A miniature microstrip dipole antenna is constructed on a high permitivity dielectric substrate for compactibility with microwave monolithic integrated circuit (MMIC) technology. The antenna comprises two dipole arms coupled to opposite faces of the substrate. The dipole arms are coupled to a microstrip transmission line through a tapered balun. The tapered balun comprises two conductors on opposite faces of the substrate which are coupled to corresponding dipole arms. The conductors are separated laterally (with respect to the width of the face of the substrate) a calculated distance, and are gradually tapered. This allows the balun to efficiently transform unbalanced signals at the microstrip transmission line to balanced signals at the plurality of dipole arms. Alternatively, the balun allows balanced signals at the dipole arms to be efficiently transformed to unbalanced signals at the microstrip transmission line. To achieve additional radiation directivity, a ground plane is coupled to and parallel with a back face of the substrate. By using a high dielectric substrate, the cavity formed between the substrate and the ground plane is relatively very shallow.
摘要:
A differential pair, push-push oscillator for generating clocking signals. This oscillator consists of two, single transistor oscillators that both oscillate at f.sub.o with a 180.degree. phase difference. The phase difference is caused by the direct connection of the transistors' drains. A current source, connected to the transistors' drains, biases the transistors. The common drain connection also serves as an output for the differential pair, push-push oscillator. This output, a stable, relatively high power signal of frequency 2f.sub.o, is a composite of the two signals from the single transistor oscillators.
摘要:
A power amplifier core (40) for amplifying RF signals is provided. The power amplifier core (40) includes a first string of FET cells (46) for amplifying the RF signal. The FET cell string includes at least two FET cells (46) connected in series with an output port (48) of the amplifier core. A bias network (44) coupled between an amplifier core input port (42) and the FET cells (46) couples the RF signal to the FET cells (46). The bias network (44) includes a bias capacitor (50) and a resistor network. The bias capacitor (50) is coupled to the input port (42) for AC coupling the RF signal to an associated FET cell (46) in the FET cell string. The resistor network is coupled from the bias capacitor (50) to the associated FET cell (46) for providing a DC bias to the associated FET cell (46).
摘要:
An microwave analog frequency divider capable of ten percent bandwidth at 10 GHz has push-push amplifiers forming an injection locked oscillator. The input frequency f.sub.i is injected at the amplifier reference terminals. The amplifier control terminals are coupled by L's and the reference terminals are coupled by C's and the reference and control terminals form with the L's and C's a resonant circuit tuned approximately to the output frequency f.sub.o =f.sub.i /N, where N is the divisor. Parallel resonant circuits in the f.sub.i injection path have high impedance at f.sub.o to prevent loading of the oscillator. A control device in the f.sub.i injection path turns the oscillator on when f.sub.i is present and off when f.sub.i is absent. Matching networks are included at input, output and between the control device and the oscillator to obtain efficient operation.
摘要:
A wide band tunable microwave oscillator for monolithic microwave integrated circuits. The oscillator does not use varactors or inductors for oscillation, but uses a voltage variable resistor coupled to a first MESFET supplying a capacitance, and to an amplifying element to create an RC oscillator. The voltage variable resistor is a second MESFET coupled to a variable voltage source. The oscillator takes advantage of the gate capacitance of the first MESFET, as well as the gain available from using an active element within the feedback loop.
摘要:
A resistive element is formed on a printed circuit board using only printed circuit board fabrication techniques. A substrate having a bi-metallic cladding on one side of the substrate and a conductive metallic cladding on an opposing side of the substrate is used. A predetermined trace pattern is formed in the metallic cladding. Resistive elements are formed in the bi-metallic cladding opposing their desired locations in the trace pattern. The bi-metallic cladding consists of a resistive layer between the substrate and a second conductive layer. Tabs are etched in the second conductive layer, then resistors, which couple various tabs together, are etched in the resistive layer. Plated holes connect the tabs to desired locations in the trace pattern located on the opposing side of the substrate.