摘要:
A d.c. charged particle accelerator comprises accelerator electrodes separated by insulating spacers defining acceleration gaps between adjacent pairs of electrodes. Individually regulated gap voltages are applied across each adjacent pair of accelerator electrodes. In embodiments, the individually regulated gap voltages are generated by electrically isolated alternators mounted on a common rotor shaft driven by an electric motor. Alternating power outputs from the alternators provide inputs to individual regulated d.c. power supplies to generate the gap voltages. The power supplies are electrically isolated and have outputs connected in series across successive pairs of accelerator electrodes. The described embodiment enables an ion beam to be accelerated to high energies and high beam currents, with good accelerator stability.
摘要:
Ion implant apparatus using a drum-type scan wheel holds wafers with a total cone angle less than 60°. A collimated scanned beam of ions, for example H+, is directed along a final beam path which is at an angle of at least 45° to the axis of rotation of the scan wheel. Ions are extracted from a source and accelerated along a linear acceleration path to a high implant energy (more than 500 keV) before scanning or mass analysis. The mass analyzer may be located near the axis of rotation and unwanted ions are directed to an annular beam dump which may be mounted on the scan wheel.
摘要:
An apparatus and a method of ion implantation using a rotary scan assembly having an axis of rotation and a periphery. A plurality of substrate holders is distributed about the periphery, and the substrate holders are arranged to hold respective planar substrates. Each planar substrate has a respective geometric center on the periphery. A beam line assembly provides a beam of ions for implantation in the planar substrates on the holders. The beam line assembly is arranged to direct said beam along a final beam path.
摘要:
Multiple control electrodes are provided asymmetrically within the plasma chamber of an ion source at respective positions along the length of the plasma chamber. Biasing the control electrodes selectively can selectively enhance the ion extraction current at adjacent positions along the length of the extraction slit. A method of generating an ion beam is disclosed in which the strengths of the transverse electric fields at different locations along the length of the plasma chamber are controlled to modify the ion beam linear current density profile along the length of the slit. The method is used for controlling the uniformity of a ribbon beam.
摘要:
A mechanical scanner for ion implantation of a substrate, the mechanical scanner comprising a hexapod with a movable platform for holding the substrate, wherein the hexapod is arranged to have six degrees of freedom to allow the movable platform to be traversed relative to an ion beam along a predetermined path.
摘要:
Multiple control electrodes are provided asymmetrically within the plasma chamber of an ion source at respective positions along the length of the plasma chamber. Biasing the control electrodes selectively can selectively enhance the ion extraction current at adjacent positions along the length of the extraction slit. A method of generating an ion beam is disclosed in which the strengths of the transverse electric fields at different locations along the length of the plasma chamber are controlled to modify the ion beam linear current density profile along the length of the slit. The method is used for controlling the uniformity of a ribbon beam.
摘要:
This invention relates to an apparatus for scanning substrates through an ion beam in the process chamber of an ion implanter. The apparatus comprises a substrate carriage and reaction mass carriage movably mounted to a fixed base. The substrate carriage is adapted to support a substrate holder. Movement of the substrate carriage results in movement of the substrate holder, and substrate mounted therein, through the ion beam. The reaction mass carriage moves in the opposite direction to the substrate carriage to counter any reaction forces exerted on the fixed base as a result of acceleration of the substrate carriage.
摘要:
Ion implant apparatus using a drum-type scan wheel holds wafers with a total cone angle less than 60°. A collimated scanned beam of ions, for example H+, is directed along a final beam path which is at an angle of at least 45° to the axis of rotation of the scan wheel. Ions are extracted from a source and accelerated along a linear acceleration path to a high implant energy (more than 500 keV) before scanning or mass analysis. The mass analyzer may be located near the axis of rotation and unwanted ions are directed to an annular beam dump which may be mounted on the scan wheel.
摘要:
An ion beam angle calibration and emittance measurement system, comprising a plate comprising an elongated slit therein, wherein the elongated slit positioned at a rotation center of the plate and configured to allow a first beam portion to pass therethrough. A beam current detector located downstream of the plate, wherein the beam current detector comprises a slit therein configured to permit a second beam portion of the first beam portion to pass therethrough, wherein the beam current detector is configured to measure a first beam current associated with the first beam portion. A beam angle detector is located downstream of the beam current detector and configured to detect a second beam current associated with the second beam portion. The plate, the current beam detector and the beam angle detector are configured to collectively rotate about the rotation center of the plate.
摘要:
This invention relates to an apparatus for scanning substrates through an ion beam in the process chamber of an ion implanter. The apparatus comprises a substrate carriage and reaction mass carriage movably mounted to a fixed base. The substrate carriage is adapted to support a substrate holder. Movement of the substrate carriage results in movement of the substrate holder, and substrate mounted therein, through the ion beam. The reaction mass carriage moves in the opposite direction to the substrate carriage to counter any reaction forces exerted on the fixed base as a result of acceleration of the substrate carriage.