公开(公告)号：US20250151576A1

公开(公告)日：2025-05-08

申请号：US18764637

申请日：2024-07-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jisoo Ham ,  Kyunglyong Kang ,  Jungu Kang ,  Youngmok Kim ,  Yongsang Jeong

IPC: H10K59/80 ,  G02B27/01 ,  H10K59/122 ,  H10K102/00

Abstract: An organic light-emitting display includes a substrate including a first pixel region, a second pixel region, and a division region disposed between the first pixel region and the second pixel region, an insulating layer disposed on the substrate and including a recess disposed in the division region, the insulating layer including a first inner side wall defining a first portion of the recess and a second inner side wall extending from the first inner side wall, defining a second portion of the recess, and having a curved shape, a plurality of pixel electrodes disposed on the insulating layer, a spacer disposed on a side wall of each of the pixel electrodes and the first inner side wall, and a first organic emission layer disposed on the spacer, wherein the spacer includes a material having an etch selectivity different than an etch selectivity of the insulating layer.

公开(公告)号：US20250151441A1

公开(公告)日：2025-05-08

申请号：US18809676

申请日：2024-08-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changkyu Lee ,  Jinyoung Kim ,  Byoungho Kwon ,  Dhami Park ,  Jihun Lim

IPC: H01L27/146

Abstract: An image sensor includes a substrate, a first pixel disposed in the substrate, the first pixel including a first photoelectric conversion region, a second pixel disposed adjacent to the first pixel in the substrate, the second pixel including a second photoelectric conversion region, a first floating diffusion region in the first pixel, a second floating diffusion region in the second pixel, an insulation layer on the substrate, and a first buried connect penetrating the insulation layer and connected to the first floating diffusion region and the second floating diffusion region, wherein the first buried connect includes an upper surface and a lower surface, the upper surface of the first buried connect is at a higher vertical level than an upper surface of the insulation layer, and the lower surface of the first buried connect is at a higher or equal vertical level than a lower surface of the insulation layer.

公开(公告)号：US20250151440A1

公开(公告)日：2025-05-08

申请号：US18751960

申请日：2024-06-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kooktae KIM

IPC: H01L27/146

Abstract: An image sensor includes unit pixels on a substrate and a pixel isolation structure passing through the substrate in a vertical direction, defining the unit pixels, and having a network-type planar structure. The pixel isolation structure includes a line isolation portion and a corner isolation portion, the line isolation portion linearly extending along a side of each of two adjacent ones of the unit pixels between the two adjacent unit pixels, and the corner isolation portion contacting a corner of each of two adjacent ones of the unit pixels. The pixel isolation structure includes a conductive pillar including a first conductive pillar in the line isolation portion and a second conductive pillar in the corner isolation portion, and an insulating structure surrounding the conductive pillar. The conductive pillar includes a metal pillar having a width in the vertical direction that varies.

公开(公告)号：US20250151327A1

公开(公告)日：2025-05-08

申请号：US18666927

申请日：2024-05-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yoonhee KANG ,  Junchae LEE ,  Sungsoo KIM ,  Kyuhee HAN

IPC: H01L29/423 ,  H01L29/06 ,  H01L29/417 ,  H01L29/775 ,  H01L29/786

Abstract: A semiconductor device includes a substrate; an active pattern extending on the substrate in a first direction; a plurality of channel layers on the active pattern; a gate structure surrounding the plurality of channel layers, and extending in a second direction that intersects the first direction; blocking insulating layers on both side surfaces of the gate structure, respectively, each of the blocking insulating layers having an upper region having a first thickness and a lower region having a second thickness smaller than the first thickness; source/drain patterns on portions of the active pattern on both sides of the gate structure, the source/drain patterns defining trenches therein; contact structures on the source/drain patterns and filling the trenches; and a metal-semiconductor compound layer between the source/drain patterns and the contact structures.

公开(公告)号：US20250151293A1

公开(公告)日：2025-05-08

申请号：US18738574

申请日：2024-06-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeehyun JUNG ,  Hansung RYU ,  Jongbeom PARK

IPC: H10B80/00 ,  H01L23/00 ,  H01L25/065

Abstract: A high bandwidth memory includes a base die and a memory stack on the base die. The memory stack includes a plurality of memory dies. The memory stack includes a first memory die closest to the base die among the plurality of memory dies and having a first width in a horizontal direction, and a second memory die on the first memory die and having a second width in the horizontal direction, the first width is smaller than the second width.

公开(公告)号：US20250151260A1

公开(公告)日：2025-05-08

申请号：US18739698

申请日：2024-06-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taehyuk Kim ,  Taejin Park ,  Hyeran Lee ,  Sungsoo Yim

IPC: H10B12/00 ,  H01L29/78

Abstract: A semiconductor device includes bit line structures spaced apart from each other in a first direction, and each of the bit line structures extends in a second direction; channels on the bit line structures, wherein the channels are electrically connected to the bit line structures and spaced apart from each other in the first direction; a gate insulation pattern structure on sidewalls of each of the channels; a gate electrode structure including: a first gate electrode on a first sidewall of the gate insulation pattern structure; and a second gate electrode on a second sidewall of the gate insulation pattern structure, wherein the second sidewall faces the first sidewall in the second direction, wherein the second gate electrode is on a third sidewall in the first direction of an end portion of the gate insulation pattern structure, and wherein the second gate electrode contacts the first gate electrode.

公开(公告)号：US20250151220A1

公开(公告)日：2025-05-08

申请号：US19014970

申请日：2025-01-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngkyong JO ,  Wooktae KIM ,  Taehyeong RYU ,  Jungkyu PARK ,  Youngmin SEO ,  Bora LEE ,  Sangbong LEE ,  Wonho LEE ,  Jongsu LEE

IPC: H05K5/03 ,  B32B3/26 ,  B32B3/30 ,  B32B7/12 ,  B32B17/10 ,  B32B27/08

Abstract: An electronic device is provided. The electronic device includes a foldable housing and a flexible display. The foldable housing may provide a front surface of the electronic device and a rear surface of the electronic device. The flexible display may be located in an inner space of the foldable housing. The flexible display may be combined with a front cover of the foldable housing providing the front surface. The front cover may include a pattern in which a plurality of openings corresponding to a folding portion of the foldable housing or a plurality of recesses provided in a surface facing the flexible display are periodically provided. A plurality of sub-pixels emitting light of a same wavelength in the flexible display may be arranged in a same direction as a direction in which the plurality of openings or the plurality of recesses are periodically arranged.

公开(公告)号：US20250151141A1

公开(公告)日：2025-05-08

申请号：US19005264

申请日：2024-12-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yijun KIM

IPC: H04W76/14 ,  H04W48/16

Abstract: An electronic device is provided. The electronic device includes communication circuitry, memory storing one or more computer programs stored with area information corresponding to the electronic device in a space, and one or more processors communicatively coupled to the communication circuitry and the memory, wherein the one or more computer programs include computer-executable instructions that, when executed by the one or more processors individually or collectively, cause the electronic device to identify position information of a remote control device based on a signal received from the remote control device through the communication circuitry, transmit, based on the identified position information being identified as corresponding to the area information, a pairing request signal with the remote control device to a server, and perform, based on the remote control device being converted to a pairing mode based on the transmitted signal, pairing with the remote control device.

公开(公告)号：US20250151058A1

公开(公告)日：2025-05-08

申请号：US18936472

申请日：2024-11-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seongmok LIM ,  Youngrok JANG ,  Hyoungju JI ,  Ameha Tsegaye ABEBE ,  Kyungjun CHOI

IPC: H04W72/1273 ,  H04L5/00

Abstract: The disclosure relates to a 5th generation (5G) or 6th generation (6G) communication system for supporting a higher data transmission rate. The disclosure relates to operations of a user equipment (UE) and base station in a wireless communication system. A method performed by a UE in a communication system are provided. The method includes transmitting, to a base station, capability information associated with simultaneous sounding reference signal (SRS) carrier switching, receiving, from the base station, downlink control information (DCI) formats, wherein the DCI formats schedule SRSs for SRS carrier switching in component carrier (CCs), wherein the SRSs are overlap in time based on the capability information indicating a support of the simultaneous SRS carrier switching, and transmitting, to the base station, at least one SRS among the scheduled SRSs for SRS carrier switching.

公开(公告)号：US20250150952A1

公开(公告)日：2025-05-08

申请号：US18638009

申请日：2024-04-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Nikhil CHUGH ,  Nitesh SUTHAR

IPC: H04W48/18 ,  H04W48/16

Abstract: The disclosure relates to a 5G or 6G communication system for supporting a higher data transmission rate. Disclosed herein is a method for providing network access to a plurality of wireless by identifying the plurality of wireless devices. The method includes: generating one or more clusters of the identified plurality of wireless devices, based on a service running in each of the plurality of wireless devices; selecting an optimal first type of wireless device as a master node for each of the clusters; dynamically assigning, network slice from a plurality of available network slices to each of the generated one or more clusters, based on one or more service requirements of the one or more wireless devices; detecting, that a new service is running on the one or more wireless devices of a corresponding cluster; and reassigning another network slice to the one or more wireless devices of the corresponding cluster.