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    Group III nitride substrate with oxygen gradient, method of making, and method of use
    1.
    发明授权
    Group III nitride substrate with oxygen gradient, method of making, and method of use 有权

    公开(公告)号：US12224172B2

    公开(公告)日：2025-02-11

    申请号：US18072684

    申请日：2022-11-30

    Applicant: SLT Technologies, Inc.

    Inventor： Mark P. D'Evelyn ,  Keiji Fukutomi ,  Drew W. Cardwell ,  David N. Italiano ,  Chiaki Domoto

    IPC: B32B27/02 ,  C30B29/40 ,  H01L21/02 ,  C30B7/10

    Abstract: Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for substrates with a controlled oxygen gradient using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.

    Large area group III nitride crystals and substrates, methods of making, and methods of use
    6.
    发明授权
    Large area group III nitride crystals and substrates, methods of making, and methods of use 有权

    公开(公告)号：US12000063B2

    公开(公告)日：2024-06-04

    申请号：US17173170

    申请日：2021-02-10

    Applicant: SLT Technologies, Inc

    Inventor： Drew W. Cardwell ,  Mark P. D'Evelyn

    IPC: C30B29/40 ,  C01B21/06 ,  C30B25/04 ,  C30B25/18

    CPC classification number: C30B25/18 ,  C01B21/0632 ,  C30B25/04 ,  C30B29/406

    Abstract: Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.

    Large area group III nitride crystals and substrates, methods of making, and methods of use
    8.
    发明授权
    Large area group III nitride crystals and substrates, methods of making, and methods of use 有权

    公开(公告)号：US12091771B2

    公开(公告)日：2024-09-17

    申请号：US17173170

    申请日：2021-02-10

    Applicant: SLT Technologies, Inc

    Inventor： Drew W. Cardwell ,  Mark P. D'Evelyn

    IPC: C30B29/40 ,  C01B21/06 ,  C30B25/04 ,  C30B25/18

    CPC classification number: C30B25/18 ,  C01B21/0632 ,  C30B25/04 ,  C30B29/406

    Abstract: Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.

    Methods for coupling of optical fibers to a power photodiode
    10.
    发明授权
    Methods for coupling of optical fibers to a power photodiode 有权

    公开(公告)号：US11575055B2

    公开(公告)日：2023-02-07

    申请号：US17151110

    申请日：2021-01-15

    Applicant: SLT Technologies, Inc

    Inventor： Drew W. Cardwell ,  Mark P. D'Evelyn

    IPC: H01L31/0232 ,  H01L31/109 ,  G01J1/44 ,  G01J1/04

    Abstract: According to the present disclosure, techniques related to manufacturing and applications of power photodiode structures and devices based on group-III metal nitride and gallium-based substrates are provided. More specifically, embodiments of the disclosure include techniques for fabricating photodiode devices comprising one or more of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, structures and devices. Such structures or devices can be used for a variety of applications including optoelectronic devices, photodiodes, power-over-fiber receivers, and others.

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