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公开(公告)号:US12224172B2
公开(公告)日:2025-02-11
申请号:US18072684
申请日:2022-11-30
Applicant: SLT Technologies, Inc.
Inventor: Mark P. D'Evelyn , Keiji Fukutomi , Drew W. Cardwell , David N. Italiano , Chiaki Domoto
Abstract: Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for substrates with a controlled oxygen gradient using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.
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2.
公开(公告)号:US11721549B2
公开(公告)日:2023-08-08
申请号:US17173169
申请日:2021-02-10
Applicant: SLT Technologies, Inc.
Inventor: Mark P. D'Evelyn , Wenkan Jiang , Drew W. Cardwell , Dirk Ehrentraut
CPC classification number: H01L21/02647 , H01L21/0243 , H01L21/0254 , H01L21/02389 , H01L21/02642 , H01L29/2003 , H01L29/36
Abstract: Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.
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公开(公告)号:US12040417B2
公开(公告)日:2024-07-16
申请号:US18059293
申请日:2022-11-28
Applicant: SLT Technologies, Inc.
Inventor: Drew W. Cardwell , Mark P. D'Evelyn
IPC: H01L31/0232 , G02B6/42 , H01L31/0216 , H01L31/0224 , H01L31/0304 , H01L31/0352 , H01L31/036 , H01L31/109 , H01L31/18
CPC classification number: H01L31/02327 , G02B6/4206 , H01L31/02161 , H01L31/022408 , H01L31/03048 , H01L31/035236 , H01L31/036 , H01L31/109 , H01L31/1892
Abstract: According to the present disclosure, techniques related to manufacturing and applications of power photodiode structures and devices based on group-III metal nitride and gallium-based substrates are provided. More specifically, embodiments of the disclosure include techniques for fabricating photodiode devices comprising one or more of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, structures and devices. Such structures or devices can be used for a variety of applications including optoelectronic devices, photodiodes, power-over-fiber receivers, and others.
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公开(公告)号:US11444216B2
公开(公告)日:2022-09-13
申请号:US16930250
申请日:2020-07-15
Applicant: SLT Technologies, Inc
Inventor: Drew W. Cardwell , Mark P. D'Evelyn
IPC: H01L31/036 , H01L31/0224 , H01L31/0232 , H01L31/0304 , H01L31/105 , H01L31/18
Abstract: According to the present disclosure, techniques related to manufacturing and applications of power photodiode structures and devices based on group-III metal nitride and gallium-based substrates are provided. More specifically, embodiments of the disclosure include techniques for fabricating photodiode devices comprising one or more of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, structures and devices. Such structures or devices can be used for a variety of applications including optoelectronic devices, photodiodes, power-over-fiber receivers, and others.
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公开(公告)号:US12027635B2
公开(公告)日:2024-07-02
申请号:US18059307
申请日:2022-11-28
Applicant: SLT Technologies, Inc.
Inventor: Drew W. Cardwell , Mark P. D'Evelyn
IPC: H01L31/0232 , G01J1/04 , G01J1/44 , H01L31/109
CPC classification number: H01L31/02327 , G01J1/0425 , G01J1/44 , H01L31/109 , G01J2001/4466
Abstract: According to the present disclosure, techniques related to manufacturing and applications of power photodiode structures and devices based on group-III metal nitride and gallium-based substrates are provided. More specifically, embodiments of the disclosure include techniques for fabricating photodiode devices comprising one or more of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, structures and devices. Such structures or devices can be used for a variety of applications including optoelectronic devices, photodiodes, power-over-fiber receivers, and others.
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6.
公开(公告)号:US12000063B2
公开(公告)日:2024-06-04
申请号:US17173170
申请日:2021-02-10
Applicant: SLT Technologies, Inc
Inventor: Drew W. Cardwell , Mark P. D'Evelyn
CPC classification number: C30B25/18 , C01B21/0632 , C30B25/04 , C30B29/406
Abstract: Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.
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公开(公告)号:US11569398B2
公开(公告)日:2023-01-31
申请号:US17151109
申请日:2021-01-15
Applicant: SLT Technologies, Inc
Inventor: Drew W. Cardwell , Mark P. D'Evelyn
IPC: H01L31/0232 , H01L31/0216 , H01L31/0224 , H01L31/0304 , G02B6/42 , H01L31/036 , H01L31/109 , H01L31/18 , H01L31/0352
Abstract: According to the present disclosure, techniques related to manufacturing and applications of power photodiode structures and devices based on group-III metal nitride and gallium-based substrates are provided. More specifically, embodiments of the disclosure include techniques for fabricating photodiode devices comprising one or more of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, structures and devices. Such structures or devices can be used for a variety of applications including optoelectronic devices, photodiodes, power-over-fiber receivers, and others.
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8.
公开(公告)号:US12091771B2
公开(公告)日:2024-09-17
申请号:US17173170
申请日:2021-02-10
Applicant: SLT Technologies, Inc
Inventor: Drew W. Cardwell , Mark P. D'Evelyn
CPC classification number: C30B25/18 , C01B21/0632 , C30B25/04 , C30B29/406
Abstract: Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.
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公开(公告)号:US11661670B2
公开(公告)日:2023-05-30
申请号:US17133002
申请日:2020-12-23
Applicant: SLT Technologies, Inc
Inventor: Mark P. D'Evelyn , Drew W. Cardwell , Jonathan D. Cook
CPC classification number: C30B7/105 , C30B28/04 , C30B29/406
Abstract: High quality ammonothermal group III metal nitride crystals having a pattern of locally-approximately-linear arrays of threading dislocations, methods of manufacturing high quality ammonothermal group III metal nitride crystals, and methods of using such crystals are disclosed. The crystals are useful for seed bulk crystal growth and as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and for photoelectrochemical water splitting for hydrogen generation devices.
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公开(公告)号:US11575055B2
公开(公告)日:2023-02-07
申请号:US17151110
申请日:2021-01-15
Applicant: SLT Technologies, Inc
Inventor: Drew W. Cardwell , Mark P. D'Evelyn
IPC: H01L31/0232 , H01L31/109 , G01J1/44 , G01J1/04
Abstract: According to the present disclosure, techniques related to manufacturing and applications of power photodiode structures and devices based on group-III metal nitride and gallium-based substrates are provided. More specifically, embodiments of the disclosure include techniques for fabricating photodiode devices comprising one or more of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, structures and devices. Such structures or devices can be used for a variety of applications including optoelectronic devices, photodiodes, power-over-fiber receivers, and others.
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