公开(公告)号：US09362322B2

公开(公告)日：2016-06-07

申请号：US13553245

申请日：2012-07-19

申请人： Seung-eon Ahn ,  I-hun Song ,  Sang-hun Jeon ,  Young Kim ,  Yong-woo Jeon ,  Chang-jung Kim

发明人： Seung-eon Ahn ,  I-hun Song ,  Sang-hun Jeon ,  Young Kim ,  Yong-woo Jeon ,  Chang-jung Kim

IPC分类号： H01L27/146 ,  G06F3/041 ,  G06F3/042

CPC分类号： H01L27/14609 ,  G06F3/0412 ,  G06F3/0421 ,  G06F2203/04103

摘要： In one embodiment, a light-sensing apparatus includes a light-sensing pixel array that has a plurality of light-sensing pixels arranged in rows and columns; and a gate driver configured to provide the light-sensing pixels with a gate voltage and a reset signal that have inverted phases. Each of the light-sensing pixels includes a light sensor transistor configured to sense light and a switch transistor configured to output a light-sensing signal from the light-sensor transistor. The gate driver includes a plurality of gate lines connected to gates of the switch transistors, a plurality of reset lines connected to gates of the light sensor transistors, and a plurality of phase inverters each connected between a corresponding reset line and a gate line. Thus, when a gate voltage is applied to one of the plurality of gate lines, a reset signal with an inversed phase to the gate voltage may be applied to a corresponding reset line.

摘要翻译： 在一个实施例中，光感测装置包括具有排列成行和列的多个感光像素的感光像素阵列; 以及栅极驱动器，被配置为向所述感光像素提供具有反相的栅极电压和复位信号。 每个感光像素包括被配置为感测光的光传感器晶体管和被配置为输出来自光传感器晶体管的光感测信号的开关晶体管。 栅极驱动器包括连接到开关晶体管的栅极的多个栅极线，连接到光传感器晶体管的栅极的多个复位线，以及各自连接在相应的复位线和栅极线之间的多个相位逆变器。 因此，当栅极电压施加到多条栅极线中的一条栅极线时，具有与栅极电压相反的相位的复位信号可被施加到相应的复位线。

公开(公告)号：US08970553B2

公开(公告)日：2015-03-03

申请号：US12926922

申请日：2010-12-17

申请人： Sung-ho Park ,  I-hun Song ,  Chang-jung Kim ,  Sang-hun Jeon ,  Seung-eon Ahn

发明人： Sung-ho Park ,  I-hun Song ,  Chang-jung Kim ,  Sang-hun Jeon ,  Seung-eon Ahn

IPC分类号： G06F19/00 ,  H01L27/146 ,  G09G3/36 ,  H04N5/3745 ,  G09G3/34 ,  G01J1/44 ,  G06F3/0354 ,  G06F3/038 ,  G06F3/041 ,  H01L27/12 ,  H01L31/113

CPC分类号： H01L27/14681 ,  G01J1/44 ,  G06F3/03542 ,  G06F3/03545 ,  G06F3/0386 ,  G06F3/0412 ,  G09G3/3406 ,  G09G3/3648 ,  G09G3/3696 ,  G09G2320/043 ,  G09G2320/0626 ,  H01L27/1225 ,  H01L27/14609 ,  H01L31/1136 ,  H04N5/3745

摘要： Example embodiments are directed to light sensing circuits having a relatively simpler structure by using light-sensitive oxide semiconductor transistors as light sensing devices, and remote optical touch panels and image acquisition apparatuses, each including the light sensing circuits. The light sensing circuit includes a light-sensitive oxide semiconductor transistor in each pixel, wherein the light-sensitive oxide semiconductor transistor is configured as a light sensing device, and a driving circuit that outputs data. The light sensing circuit may have a relatively simple circuit structure including a plurality of transistors in one pixel. As a result, the structure and operation of the light sensing circuit may be simplified.

摘要翻译： 示例性实施例涉及具有通过使用光敏氧化物半导体晶体管作为光感测装置的相对简单的结构的光感测电路，以及每个包括光感测电路的远程光学触摸面板和图像采集装置。 光感测电路在每个像素中包括光敏氧化物半导体晶体管，其中光敏氧化物半导体晶体管被配置为光感测装置，以及输出数据的驱动电路。 光感测电路可以具有包括一个像素中的多个晶体管的相对简单的电路结构。 结果，可以简化光感测电路的结构和操作。

公开(公告)号：US08704148B2

公开(公告)日：2014-04-22

申请号：US13358862

申请日：2012-01-26

申请人： Sang-hun Jeon ,  I-hun Song ,  Seung-eon Ahn ,  Chang-jung Kim ,  Young Kim

发明人： Sang-hun Jeon ,  I-hun Song ,  Seung-eon Ahn ,  Chang-jung Kim ,  Young Kim

IPC分类号： H01J40/14

CPC分类号： H01L27/14632 ,  H01L27/1446 ,  H01L27/14603 ,  H01L27/14623

摘要： According to an example embodiment, a light-sensing apparatus may include an array of light-sensing pixels, a first gate driver, and a signal output unit. Each of the light-sensing pixels may include a light sensor transistor configured to sense light, a switch transistor configured to output a light-sensing signal from the light sensor transistor, and a conductive light-shielding film on a light-incident surface of the switch transistor. The light sensor transistor and the switch transistor may have the same oxide semiconductor transistor structure. The first gate driver may be configured to provide a gate voltage and a negative bias voltage to each of the light-sensing pixels. The signal output unit may be configured to receive the light-sensing signal from each of the light-sensing pixels and output a data signal.

摘要翻译： 根据示例实施例，光感测装置可以包括光感测像素阵列，第一栅极驱动器和信号输出单元。 每个感光像素可以包括被配置为感测光的光传感器晶体管，被配置为从光传感器晶体管输出光感测信号的开关晶体管，以及在所述光传感器晶体管的光入射表面上的导电屏蔽膜 开关晶体管。 光传感器晶体管和开关晶体管可以具有相同的氧化物半导体晶体管结构。 第一栅极驱动器可以被配置为向每个感光像素提供栅极电压和负的偏置电压。 信号输出单元可以被配置为从每个感光像素接收光感测信号并输出​​数据信号。

公开(公告)号：US20130088460A1

公开(公告)日：2013-04-11

申请号：US13563911

申请日：2012-08-01

申请人： Seung-eon Ahn ,  I-hun Song ,  Sang-hun Jeon ,  Chang-jung Kim ,  Young Kim ,  Yong-woo Jeon

发明人： Seung-eon Ahn ,  I-hun Song ,  Sang-hun Jeon ,  Chang-jung Kim ,  Young Kim ,  Yong-woo Jeon

IPC分类号： G06F3/042

CPC分类号： G06F3/042 ,  G06F3/0412

摘要： An optical touch screen apparatus that includes a display pixel including a display cell and a driving transistor, the display cell configured to display an image and the driving transistor configured to turn on or off the display cell, the driving transistor having a double gate structure; and a light-sensing pixel including a light-sensing transistor and a switch transistor, the light-sensing transistor configured to sense incident light and the switch transistor configured to output data from the light-sensing transistor, the switch transistor having the double gate structure, wherein the double gate structure is a structure in which a bottom gate and a top gate are arranged such that a channel layer is disposed therebetween. The top gate may be formed together when forming a transparent electrode in the pixel, and thus even when the top gate is further included, the number of manufacturing processes is not increased.

摘要翻译： 一种光学触摸屏设备，包括包括显示单元和驱动晶体管的显示像素，所述显示单元被配置为显示图像，所述驱动晶体管被配置为导通或关闭所述显示单元，所述驱动晶体管具有双栅极结构; 以及包括感光晶体管和开关晶体管的感光像素，所述感光晶体管被配置为检测入射光，并且所述开关晶体管被配置为从所述感光晶体管输出数据，所述开关晶体管具有所述双栅极结构 其特征在于，所述双栅极结构是这样的结构，其中底栅极和顶栅极布置成使得沟道层位于它们之间。 当在像素中形成透明电极时，顶栅可以一起形成，因此即使当进一步包括顶栅时，制造工艺的数量也不会增加。

公开(公告)号：US20110241989A1

公开(公告)日：2011-10-06

申请号：US12923243

申请日：2010-09-10

申请人： Sung-ho Park ,  Sang-hun Jeon ,  I-hun Song ,  Chang-jung Kim ,  Seung-eon Ahn

发明人： Sung-ho Park ,  Sang-hun Jeon ,  I-hun Song ,  Chang-jung Kim ,  Seung-eon Ahn

IPC分类号： G06F3/033

CPC分类号： G06F3/0386 ,  G06F3/0412

摘要： A remote touch panel includes a plurality of light sensor cells arranged in two dimensions. Each light sensor cell may include a light-sensitive semiconductor layer and first and second electrodes electrically connected to the light-sensitive semiconductor layer. The remote touch panel may be controlled at a remote distance. For example, a large display apparatus can be easily controlled by using a simple light source device, for example, a laser pointer.

摘要翻译： 远程触摸面板包括以二维布置的多个光传感器单元。 每个光传感器单元可以包括光敏半导体层和电连接到光敏半导体层的第一和第二电极。 远程触摸面板可以被控制在远处。 例如，通过使用简单的光源装置，例如激光指示器，可以容易地控制大型的显示装置。

公开(公告)号：US09178030B2

公开(公告)日：2015-11-03

申请号：US13616964

申请日：2012-09-14

申请人： Sang-hun Jeon ,  I-hun Song ,  Chang-jung Kim ,  Seung-eon Ahn

发明人： Sang-hun Jeon ,  I-hun Song ,  Chang-jung Kim ,  Seung-eon Ahn

IPC分类号： G02F1/136 ,  H01L29/45 ,  G02F1/1368 ,  G06F3/042 ,  H01L29/49 ,  H01L29/786 ,  G02F1/1333

CPC分类号： H01L29/45 ,  G02F1/13338 ,  G02F1/1368 ,  G06F3/0421 ,  G06F2203/04103 ,  H01L29/4908 ,  H01L29/78606 ,  H01L29/7869

摘要： A thin film transistor is provided. The transistor includes a gate; a first passivation layer covering the gate; a channel layer disposed on the first passivation layer; a source and a drain that are disposed on the first passivation layer and contact two sides of the channel layer; a second passivation layer covering the channel layer, the source, and the drain; first and second transparent electrode layers that are disposed on the second passivation layer and spaced apart from each other; a first transparent conductive via that penetrates the second passivation layer and connects the source and the first transparent electrode layer; and a second transparent conductive via that penetrates the second passivation layer and connects the drain and the second transparent electrode layer. A cross-sectional area of the gate is larger than a cross-sectional area of the channel layer, the source, and the drain combined.

摘要翻译： 提供薄膜晶体管。 晶体管包括一个栅极; 覆盖所述栅极的第一钝化层; 设置在所述第一钝化层上的沟道层; 源极和漏极，其设置在所述第一钝化层上并接触所述沟道层的两侧; 覆盖沟道层，源极和漏极的第二钝化层; 第一和第二透明电极层，其设置在第二钝化层上并彼此间隔开; 第一透明导电通孔，其穿透所述第二钝化层并连接所述源极和所述第一透明电极层; 以及第二透明导电通孔，其穿透第二钝化层并连接漏极和第二透明电极层。 栅极的横截面面积大于沟道层，源极和漏极组合的横截面面积。

公开(公告)号：US20130168770A1

公开(公告)日：2013-07-04

申请号：US13547200

申请日：2012-07-12

申请人： Sang-hun Jeon ,  Chang-jung Kim ,  I-hun Song

发明人： Sang-hun Jeon ,  Chang-jung Kim ,  I-hun Song

IPC分类号： H01L29/772 ,  H01L21/336

CPC分类号： H01L29/42384 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

摘要： A high-voltage oxide transistor includes a substrate; a channel layer disposed on the substrate; a gate electrode disposed on the substrate to correspond to the channel layer; a source contacting a first side of the channel layer; and a drain contacting a second side of the channel layer, wherein the channel layer includes a plurality of oxide layers, and none of the plurality of oxide layers include silicon. The gate electrode may be disposed on or under the channel layer. Otherwise, the gate electrodes may be disposed respectively on and under the channel layer.

摘要翻译： 高压氧化物晶体管包括基板; 设置在所述基板上的沟道层; 设置在所述基板上以对应于所述沟道层的栅电极; 源极，与所述沟道层的第一侧接触; 以及与沟道层的第二面接触的漏极，其中所述沟道层包括多个氧化物层，并且所述多个氧化物层中没有一个包括硅。 栅电极可以设置在沟道层上或下面。 否则，栅极电极可以分别设置在沟道层上和下面。

公开(公告)号：US20110156020A1

公开(公告)日：2011-06-30

申请号：US12801501

申请日：2010-06-11

申请人： Sang-hun Jeon ,  I-hun Song ,  Chang-jung Kim ,  Sung-ho Park

发明人： Sang-hun Jeon ,  I-hun Song ,  Chang-jung Kim ,  Sung-ho Park

IPC分类号： H01L29/786

CPC分类号： G11C13/0007 ,  G11C13/003 ,  G11C2013/0073 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/72 ,  G11C2213/73 ,  G11C2213/74 ,  G11C2213/76 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147

摘要： Provided is a transistor including a semiconductor insertion layer between a channel layer and a source electrode. A potential barrier between the channel layer and the source electrode may be increased by the semiconductor insertion layer. The channel layer may be an oxide semiconductor layer. The transistor may be an enhancement mode transistor.

摘要翻译： 提供了一种晶体管，其包括在沟道层和源极之间的半导体插入层。 可以通过半导体插入层增加沟道层和源电极之间的势垒。 沟道层可以是氧化物半导体层。 晶体管可以是增强型晶体管。

公开(公告)号：US20110108704A1

公开(公告)日：2011-05-12

申请号：US12805723

申请日：2010-08-17

申请人： Ho-jung Kim ,  U-in Chung ,  Jai-kwang Shin ,  Sun-il Kim ,  I-hun Song ,  Chang-jung Kim ,  Sang-hun Jeon

发明人： Ho-jung Kim ,  U-in Chung ,  Jai-kwang Shin ,  Sun-il Kim ,  I-hun Song ,  Chang-jung Kim ,  Sang-hun Jeon

IPC分类号： H01L27/146 ,  H01L31/09 ,  H01L31/101 ,  H01L31/102

CPC分类号： H04N9/045 ,  H01L27/14643 ,  H04N5/3745

摘要： Image sensors and methods of operating the same. An image sensor includes a pixel array including a plurality of pixels. Each of the plurality of pixels includes a photo sensor, the voltage-current characteristics of which vary according to energy of incident light, and that generates a sense current determined by the energy of the incident light; a reset unit that is activated to generate a reference current, according to a reset signal for resetting at least one of the plurality of pixels; and a conversion unit that converts the sense current and the reference current into a sense voltage and a reference voltage, respectively.

摘要翻译： 图像传感器及其操作方法。 图像传感器包括包括多个像素的像素阵列。 多个像素中的每一个包括光电传感器，其电压 - 电流特性根据入射光的能量而变化，并且产生由入射光的能量确定的感测电流; 根据用于复位所述多个像素中的至少一个的复位信号，被激活以产生参考电流的复位单元; 以及转换单元，其将感测电流和参考电流分别转换为感测电压和参考电压。

公开(公告)号：US08975568B2

公开(公告)日：2015-03-10

申请号：US12805723

申请日：2010-08-17

申请人： Ho-jung Kim ,  U-in Chung ,  Jai-kwang Shin ,  Sun-il Kim ,  I-hun Song ,  Chang-jung Kim ,  Sang-hun Jeon

发明人： Ho-jung Kim ,  U-in Chung ,  Jai-kwang Shin ,  Sun-il Kim ,  I-hun Song ,  Chang-jung Kim ,  Sang-hun Jeon

IPC分类号： H01J27/00 ,  H04N9/04 ,  H04N5/3745 ,  H01L27/146

摘要： Image sensors and methods of operating the same. An image sensor includes a pixel array including a plurality of pixels. Each of the plurality of pixels includes a photo sensor, the voltage-current characteristics of which vary according to energy of incident light, and that generates a sense current determined by the energy of the incident light; a reset unit that is activated to generate a reference current, according to a reset signal for resetting at least one of the plurality of pixels; and a conversion unit that converts the sense current and the reference current into a sense voltage and a reference voltage, respectively.