公开(公告)号：US09775108B2

公开(公告)日：2017-09-26

申请号：US13643999

申请日：2011-04-18

Applicant: Beibei Jia ,  Dajun Zhang ,  Jinbo Zhao ,  Sen Xu

Inventor： Beibei Jia ,  Dajun Zhang ,  Jinbo Zhao ,  Sen Xu

IPC: H04W52/02 ,  H04W28/16 ,  H04W48/06 ,  H04W28/02

CPC classification number: H04W52/0206 ,  H04W28/16 ,  H04W52/0203 ,  Y02D70/1222 ,  Y02D70/1224 ,  Y02D70/1226 ,  Y02D70/1242 ,  Y02D70/1262 ,  Y02D70/1264

Abstract: The present invention discloses a method and equipment for saving energy. The method comprises the following steps: the first network node acquires load information of the second network node next to the first and modifies energy saving state according to its own load information and that of said second network node; said first and second network nodes send information on indication for saving energy state to the adjacent third network node and inform the information of modifying energy saving state to said third network node based on said information on indication for saving energy state. Embodiments of the present invention optimize resource utilization rate of the whole network.

公开(公告)号：US09054018B2

公开(公告)日：2015-06-09

申请号：US13812503

申请日：2012-10-12

Applicant: Xiaolong Ma ,  Huaxiang Yin ,  Sen Xu ,  Huilong Zhu

Inventor： Xiaolong Ma ,  Huaxiang Yin ,  Sen Xu ,  Huilong Zhu

IPC: H01L29/06 ,  H01L21/84 ,  H01L29/15 ,  H01L29/66 ,  H01L29/78 ,  H01L29/10 ,  B82Y10/00 ,  H01L29/51 ,  H01L29/165

CPC classification number: H01L29/15 ,  B82Y10/00 ,  H01L29/1054 ,  H01L29/151 ,  H01L29/165 ,  H01L29/517 ,  H01L29/66431 ,  H01L29/66795 ,  H01L29/7781 ,  H01L29/785 ,  H01L29/7853

Abstract: The present invention discloses a method for manufacturing a semiconductor device, which comprises: forming a plurality of fins on a substrate, which extend along a first direction and have rhombus-like cross-sections; forming a gate stack structure on each fin, which traverses the plurality of fins and extends along a second direction; wherein a portion in each fin that is under the gate stack structure forms a channel region of the device, and portions in each fin that are at both sides of the gate stack structure along the first direction form source and drain regions. The semiconductor device and its manufacturing method according to the present invention use rhombus-like fins to improve the gate control capability to effectively suppress the short channel effect, moreover, an epitaxial quantum well is used therein to better limit the carriers, thus improving the device drive capability.

Abstract translation: 本发明公开了一种半导体器件的制造方法，其特征在于，在基板上形成沿着第一方向延伸并具有菱形状的横截面的多个翅片， 在每个翅片上形成栅极堆叠结构，其横过所述多个翅片并沿着第二方向延伸; 其中位于所述栅极堆叠结构下方的每个鳍中的部分形成所述器件的沟道区，并且沿着所述第一方向位于所述栅极堆叠结构两侧的每个鳍中的部分形成源极和漏极区。 根据本发明的半导体器件及其制造方法使用菱形翅片来提高栅极控制能力以有效地抑制短沟道效应，此外，在其中使用外延量子阱以更好地限制载流子，从而改善器件 驱动能力。

公开(公告)号：US20100297687A1

公开(公告)日：2010-11-25

申请号：US12783373

申请日：2010-05-19

Applicant: Rajakkannu Mutharasan ,  Sen Xu ,  Blake N. Johnson ,  Harsh Sharma ,  Ramji S. Lakshmanan

Inventor： Rajakkannu Mutharasan ,  Sen Xu ,  Blake N. Johnson ,  Harsh Sharma ,  Ramji S. Lakshmanan

IPC: C12Q1/02 ,  G01R27/16

CPC classification number: G01N29/22 ,  G01N27/12 ,  G01N29/022 ,  G01N29/036 ,  G01N33/02 ,  G01N33/18 ,  G01N33/487

Abstract: A change in impedance of a electromechanical resonating sensor is utilized to detect and/or measure a change in mass accumulated on the sensor. The impedance is monitored at a fixed frequency. The fixed frequency may be at or near the resonance frequency of the sensor. In various configurations, the sensor comprises a quartz crystal microbalance sensor or a piezoelectric cantilever sensor.

Abstract translation: 利用机电谐振传感器的阻抗变化来检测和/或测量传感器上累积的质量变化。 以固定频率监测阻抗。 固定频率可以处于或接近传感器的谐振频率。 在各种结构中，传感器包括石英晶体微量天平传感器或压电悬臂传感器。

公开(公告)号：US08796744B1

公开(公告)日：2014-08-05

申请号：US13812504

申请日：2012-10-12

Applicant: Xiaolong Ma ,  Huaxiang Yin ,  Sen Xu ,  Huilong Zhu

Inventor： Xiaolong Ma ,  Huaxiang Yin ,  Sen Xu ,  Huilong Zhu

IPC: H01L27/148 ,  H01L29/768 ,  H01L29/775

CPC classification number: H01L29/775 ,  H01L29/161 ,  H01L29/165 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66431 ,  H01L29/66545 ,  H01L29/7786

Abstract: The present invention discloses a semiconductor device, which comprises a substrate, a buffer layer on the substrate, an inversely doped isolation layer on the buffer layer, a barrier layer on the inversely doped isolation layer, a channel layer on the barrier layer, a gate stack structure on the channel layer, and source and drain regions at both sides of the gate stack structure, characterized in that the buffer layer and/or the barrier layer and/or the inversely doped isolation layer are formed of SiGe alloys or SiGeSn alloys, and the channel layer is formed of a GeSn alloy. The semiconductor device according to the present invention uses a quantum well structure of SiGe/GeSn/SiGe to restrict transportation of carriers, and it introduces a stress through lattice mis-match to greatly increase the carrier mobility, thus improving the device driving capability so as to be adapted to high-speed and high-frequency application.

Abstract translation: 本发明公开了一种半导体器件，其包括衬底，衬底上的缓冲层，缓冲层上的反掺杂隔离层，反掺杂隔离层上的阻挡层，阻挡层上的沟道层，栅极 沟道层上的堆叠结构以及栅极堆叠结构两侧的源极和漏极区域，其特征在于缓冲层和/或势垒层和/或反向掺杂隔离层由SiGe合金或SiGeSn合金形成， 并且沟道层由GeSn合金形成。 根据本发明的半导体器件使用SiGe / GeSn / SiGe的量子阱结构来限制载流子的传输，并且通过晶格失配引入应力以大大增加载流子迁移率，从而提高器件驱动能力，从而 适应高速高频应用。

公开(公告)号：US20090235746A1

公开(公告)日：2009-09-24

申请号：US12361922

申请日：2009-01-29

Applicant: Rajakkannu Mutharasan ,  Peter A. Nagy ,  Sen Xu

Inventor： Rajakkannu Mutharasan ,  Peter A. Nagy ,  Sen Xu

IPC: G01H13/00 ,  C12Q1/04 ,  G01N33/53

CPC classification number: G01N33/56911

Abstract: Extremely minute amounts of live pathogens are rapidly detected using a piezoelectric cantilever sensor. A single pathogen is detectable in about 30 minutes. Pathogen-specific antibodies are immobilized on the sensor surface. The sensor is exposed to a medium that potentially contains the target pathogen. When target pathogens are contained in the medium, both dead and live pathogen cells bind to the immobilized antibody on the sensor surface. The attached target pathogen cells are exposed to a pathogen discriminator capable of discriminating between live cells and dead cells by increasing the mass of live cells. Example pathogens include Escherichia coli, Listeri monocytogene, and Salmonella enteritidis. Example antibodies include those that bind to the pathogenic bacteria designated as ATCC 43251, ATCC 700375, and ATCC 31194. Example pathogen discriminators include intracellular pH indicating molecules.

Abstract translation: 使用压电悬臂传感器快速检测极微量的活病原体。 在大约30分钟内可以检测到单个病原体。 病原体特异性抗体固定在传感器表面上。 传感器暴露于潜在含有目标病原体的介质中。 当目标病原体包含在培养基中时，死亡和活的病原体细胞均与传感器表面上的固定化抗体结合。 将附着的目标病原体细胞暴露于能够通过增加活细胞质量来区分活细胞和死细胞的病原体鉴别器。 示例性病原体包括大肠杆菌，单核细胞增多性李斯特菌和肠炎沙门氏菌。 示例性抗体包括结合命名为ATCC 43251，ATCC 700375和ATCC 31194的致病细菌的抗体。实例性病原体鉴别剂包括细胞内pH指示分子。

公开(公告)号：US20130095842A1

公开(公告)日：2013-04-18

申请号：US13643999

申请日：2011-04-18

Applicant: Beibei Jia ,  Dajun Zhang ,  Jinbo Zhao ,  Sen Xu

Inventor： Beibei Jia ,  Dajun Zhang ,  Jinbo Zhao ,  Sen Xu

IPC: H04W52/02

CPC classification number: H04W52/0206 ,  H04W28/16 ,  H04W52/0203 ,  Y02D70/1222 ,  Y02D70/1224 ,  Y02D70/1226 ,  Y02D70/1242 ,  Y02D70/1262 ,  Y02D70/1264

Abstract: The present invention discloses a method and equipment for saving energy. The method comprises the following steps: the first network node acquires load information of the second network node next to the first and modifies energy saving state according to its own load information and that of said second network node; said first and second network nodes send information on indication for saving energy state to the adjacent third network node and inform the information of modifying energy saving state to said third network node based on said information on indication for saving energy state. Embodiments of the present invention optimize resource utilization rate of the whole network.

Abstract translation: 本发明公开了一种节约能源的方法和设备。 该方法包括以下步骤：第一网络节点获取第一网络节点的负载信息，并根据其自身负载信息和所述第二网络节点的负载信息修改节能状态; 所述第一和第二网络节点根据所述关于节能状态指示的信息，向相邻的第三网络节点发送关于节能状态的指示的信息，并向所述第三网络节点通知修改节能状态的信息。 本发明的实施例优化了整个网络的资源利用率。

公开(公告)号：US08809065B2

公开(公告)日：2014-08-19

申请号：US12783373

申请日：2010-05-19

Applicant: Rajakkannu Mutharasan ,  Sen Xu ,  Blake N. Johnson ,  Harsh Sharma ,  Ramji S. Lakshmanan

Inventor： Rajakkannu Mutharasan ,  Sen Xu ,  Blake N. Johnson ,  Harsh Sharma ,  Ramji S. Lakshmanan

IPC: G01N29/22

CPC classification number: G01N29/22 ,  G01N27/12 ,  G01N29/022 ,  G01N29/036 ,  G01N33/02 ,  G01N33/18 ,  G01N33/487

Abstract: A change in impedance of a electromechanical resonating sensor is utilized to detect and/or measure a change in mass accumulated on the sensor. The impedance is monitored at a fixed frequency. The fixed frequency may be at or near the resonance frequency of the sensor. In various configurations, the sensor comprises a quartz crystal microbalance sensor or a piezoelectric cantilever sensor.

Abstract translation: 利用机电谐振传感器的阻抗变化来检测和/或测量传感器上累积的质量变化。 以固定频率监测阻抗。 固定频率可以处于或接近传感器的谐振频率。 在各种结构中，传感器包括石英晶体微量天平传感器或压电悬臂传感器。

公开(公告)号：US20140197376A1

公开(公告)日：2014-07-17

申请号：US13812504

申请日：2012-10-12

Applicant: Xiaolong Ma ,  Huaxiang Yin ,  Sen Xu ,  Huilong Zhu

Inventor： Xiaolong Ma ,  Huaxiang Yin ,  Sen Xu ,  Huilong Zhu

IPC: H01L29/775

CPC classification number: H01L29/775 ,  H01L29/161 ,  H01L29/165 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66431 ,  H01L29/66545 ,  H01L29/7786

Abstract: The present invention discloses a semiconductor device, which comprises a substrate, a buffer layer on the substrate, an inversely doped isolation layer on the buffer layer, a barrier layer on the inversely doped isolation layer, a channel layer on the barrier layer, a gate stack structure on the channel layer, and source and drain regions at both sides of the gate stack structure, characterized in that the buffer layer and/or the barrier layer and/or the inversely doped isolation layer are formed of SiGe alloys or SiGeSn alloys, and the channel layer is formed of a GeSn alloy. The semiconductor device according to the present invention uses a quantum well structure of SiGe/GeSn/SiGe to restrict transportation of carriers, and it introduces a stress through lattice mis-match to greatly increase the carrier mobility, thus improving the device driving capability so as to be adapted to high-speed and high-frequency application.

Abstract translation: 本发明公开了一种半导体器件，其包括衬底，衬底上的缓冲层，缓冲层上的反掺杂隔离层，反掺杂隔离层上的阻挡层，阻挡层上的沟道层，栅极 沟道层上的堆叠结构以及栅极堆叠结构两侧的源极和漏极区域，其特征在于缓冲层和/或势垒层和/或反向掺杂隔离层由SiGe合金或SiGeSn合金形成， 并且沟道层由GeSn合金形成。 根据本发明的半导体器件使用SiGe / GeSn / SiGe的量子阱结构来限制载流子的传输，并且通过晶格失配引入应力以大大增加载流子迁移率，从而提高器件驱动能力，从而 适应高速高频应用。

公开(公告)号：US08236508B2

公开(公告)日：2012-08-07

申请号：US12361922

申请日：2009-01-29

Applicant: Rajakkannu Mutharasan ,  Peter A. Nagy ,  Sen Xu

Inventor： Rajakkannu Mutharasan ,  Peter A. Nagy ,  Sen Xu

IPC: C12Q1/04 ,  G01N33/53

CPC classification number: G01N33/56911

Abstract: Extremely minute amounts of live pathogens are rapidly detected using a piezoelectric cantilever sensor. A single pathogen is detectable in about 30 minutes. Pathogen-specific antibodies are immobilized on the sensor surface. The sensor is exposed to a medium that potentially contains the target pathogen. When target pathogens are contained in the medium, both dead and live pathogen cells bind to the immobilized antibody on the sensor surface. The attached target pathogen cells are exposed to a pathogen discriminator capable of discriminating between live cells and dead cells by increasing the mass of live cells. Example pathogens include Escherichia coli, Listeri monocytogene, and Salmonella enteritidis. Example antibodies include those that bind to the pathogenic bacteria designated as ATCC 43251, ATCC 700375, and ATCC 31194. Example pathogen discriminators include intracellular pH indicating molecules.

Abstract translation: 使用压电悬臂传感器快速检测极微量的活病原体。 在大约30分钟内可以检测到单个病原体。 病原体特异性抗体固定在传感器表面上。 传感器暴露于潜在含有目标病原体的介质中。 当目标病原体包含在培养基中时，死亡和活的病原体细胞均与传感器表面上的固定化抗体结合。 将附着的目标病原体细胞暴露于能够通过增加活细胞质量来区分活细胞和死细胞的病原体鉴别器。 示例性病原体包括大肠杆菌，单核细胞增多性李斯特菌和肠炎沙门氏菌。 示例性抗体包括结合命名为ATCC 43251，ATCC 700375和ATCC 31194的致病细菌的抗体。实例性病原体鉴别剂包括细胞内pH指示分子。