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    Light absorbent agent polymer for organic anti-reflective coating and preparation method and organic anti-reflective coating composition comprising the same
    1.
    发明授权
    Light absorbent agent polymer for organic anti-reflective coating and preparation method and organic anti-reflective coating composition comprising the same 失效
    用于有机抗反射涂层的光吸收剂聚合物及其制备方法和包含其的有机抗反射涂料组合物

    公开(公告)号：US07033729B2

    公开(公告)日：2006-04-25

    申请号：US10962867

    申请日：2004-10-12

    申请人： Jae-chang Jung ,  Keun Kyu Kong ,  Seok-kyun Kim

    发明人： Jae-chang Jung ,  Keun Kyu Kong ,  Seok-kyun Kim

    IPC分类号： G03C1/73 ,  G03C1/835 ,  G03F7/20 ,  G03F7/36 ,  C08F34/02

    CPC分类号： G03F7/091 ,  C08F232/08 ,  Y10S430/106 ,  Y10S430/122 ,  Y10S430/126

    摘要： Disclosed are a light absorbent agent polymer for organic anti-reflective coating which can prevent diffused reflection of lower film layer or substrate and reduce standing waves caused by variation of thickness of the photoresist itself, thereby, increasing uniformity of the photoresist pattern, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF among processes for manufacturing semiconductor device, and its preparation method. Also, the present invention discloses an organic anti-reflective coating composition comprising the light absorbent agent polymer for the organic anti-reflective coating and a pattern formation process using the coating composition.

    摘要翻译： 公开了一种用于有机抗反射涂层的光吸收剂聚合物，其可以防止下膜层或基材的扩散反射，并减少由光致抗蚀剂本身的厚度变化引起的驻波，从而增加光致抗蚀剂图案的均匀性 用于通过在制造半导体器件的工艺中使用193nm的ArF来形成用于光刻的光刻胶的超精细图案及其制备方法。 此外，本发明公开了一种有机抗反射涂层组合物，其包含用于有机抗反射涂层的光吸收剂聚合物和使用该涂料组合物的图案形成方法。

    Cleaning solution for removing photoresist
    5.
    发明授权
    Cleaning solution for removing photoresist 有权
    用于除去光致抗蚀剂的清洁溶液

    公开(公告)号：US07563753B2

    公开(公告)日：2009-07-21

    申请号：US10317578

    申请日：2002-12-12

    申请人： Geun Su Lee ,  Jae Chang Jung ,  Ki Soo Shin ,  Keun Kyu Kong ,  Sung Koo Lee ,  Young Sun Hwang

    发明人： Geun Su Lee ,  Jae Chang Jung ,  Ki Soo Shin ,  Keun Kyu Kong ,  Sung Koo Lee ,  Young Sun Hwang

    IPC分类号： C11D7/50

    CPC分类号： C11D3/3738 ,  C11D1/44 ,  C11D1/72 ,  C11D1/721 ,  C11D1/722 ,  C11D3/373 ,  C11D3/3742 ,  C11D7/263 ,  C11D7/265 ,  C11D7/267 ,  C11D7/3218 ,  C11D7/34 ,  C11D11/0047 ,  G03F7/422

    摘要： Cleaning solutions for removing photoresist resins and a method of forming patterns using the same are disclosed. The cleaning solution includes water (H2O) as main component, one or more surfactants as additive selected from the group consisting of polyoxyalkylene compounds, a salt of alcohol amine of Formula 1 and hydrocarbon compounds having carboxylic acid (—COOH) group, a salt of alcohol amine of Formula 1 and hydrocarbon compounds having sulfonic acid (—SO3H) group, polyethylene glycol compounds, compounds of Formula 3, compounds having a molecular weight ranging from 1000 to 10000 including repeating unit of Formula 4, polyether denatured silicon compounds and alcohol compounds. wherein R1, R2, R3, R4, R5, A, l and n are defined in the specification.

    摘要翻译： 公开了用于除去光致抗蚀剂树脂的清洁溶液和使用其形成图案的方法。 清洗溶液包括作为主要成分的水（H 2 O），一种或多种作为添加剂的表面活性剂，其选自聚氧化烯化合物，式1的醇胺盐和具有羧酸（-COOH）基团的烃化合物， 式1的醇胺和具有磺酸（-SO 3 H）基团的烃化合物，聚乙二醇化合物，式3化合物，分子量为1000至10000的化合物，包括式4的重复单元，聚醚变性硅化合物和醇化合物 。 其中R1，R2，R3，R4，R5，A，1和n在本说明书中定义。

    Photoresist cross-linker and photoresist composition comprising the same
    6.
    发明授权
    Photoresist cross-linker and photoresist composition comprising the same 失效
    光阻抗交联剂和包含其的光致抗蚀剂组合物

    公开(公告)号：US06482565B1

    公开(公告)日：2002-11-19

    申请号：US09448964

    申请日：1999-11-24

    申请人： Jae Chang Jung ,  Keun Kyu Kong ,  Myoung Soo Kim ,  Hyoung Gi Kim ,  Hyeong Soo Kim ,  Ki Ho Baik

    发明人： Jae Chang Jung ,  Keun Kyu Kong ,  Myoung Soo Kim ,  Hyoung Gi Kim ,  Hyeong Soo Kim ,  Ki Ho Baik

    IPC分类号： G03F7004

    CPC分类号： C07D407/12 ,  C07D317/12 ,  C07D319/06

    摘要： The present invention relates to a cross-linker for use in a photoresist which is suitable for a photolithography process using KrF (248 ru), ArF (193 nm), E-beam, ion beam or EUV light source. According to the present invention, preferred cross-linkers comprise a copolymer having repeating units derived from: (i) a compound represented by following Chemical Formula 1 and/or (ii) one or more compound(s) selected from the group consisting of acrylic acid, methacrylic acid and maleic anhydride. wherein, R1, R2 and R individually represent straight or branched C1-10 alkyl, straight or branched C1-10 ester, straight or branched C1-10 ketone, straight or branched C1-10 carboxylic acid, straight or branched C1-10 acetal, straight or branched C1-10 alkyl including at least one hydroxyl group, straight or branched C1-10 ester including at least one hydroxyl group, straight or branched C1-10 ketone including at least one hydroxyl group, straight or branched C1-10 carboxylic acid including at least one hydroxyl group, and straight or branched C1-10 acetal including at least one hydroxyl group; R3 represents hydrogen or methyl; m represents 0 or 1; and n represents a number of 1 to 5.

    摘要翻译： 本发明涉及用于光致抗蚀剂的交联剂，其适用于使用KrF（248uR），ArF（193nm），电子束，离子束或EUV光源的光刻工艺。 根据本发明，优选的交联剂包含具有衍生自以下的重复单元的共聚物：（i）由以下化学式1表示的化合物和/或（ii）一种或多种选自丙烯酸的化合物 酸，甲基丙烯酸和马来酸酐。其中R1，R2和R各自表示直链或支链C1-10烷基，直链或支链C1-10酯，直链或支链C1-10酮，直链或支链C1-10羧酸， 包括至少一个羟基的直链或支链C 1-10烷基，包括至少一个羟基的直链或支链C 1-10烷基，包括至少一个羟基的直链或支链C 1-10酮， 包含至少一个羟基的直链或支链C 1-10羧酸，和包含至少一个羟基的直链或支链C 1-10缩醛; R3表示氢或甲基; m表示0或1; n表示1〜5的数。

    Photoresist composition containing photo base generator with photo acid generator
    8.
    发明授权
    Photoresist composition containing photo base generator with photo acid generator 失效
    含有光产酸剂的光源组合物的光致抗蚀剂组合物

    公开(公告)号：US06395451B1

    公开(公告)日：2002-05-28

    申请号：US09666932

    申请日：2000-09-21

    申请人： Jae Chang Jung ,  Keun Kyu Kong ,  Jin Soo Kim ,  Ki Ho Baik

    发明人： Jae Chang Jung ,  Keun Kyu Kong ,  Jin Soo Kim ,  Ki Ho Baik

    IPC分类号： G03F7004

    CPC分类号： H01L21/02118 ,  G03F7/0045 ,  G03F7/039 ,  H01L21/02282 ,  H01L21/0274 ,  H01L21/312 ,  Y10S430/115 ,  Y10S430/12

    摘要： The present invention relates to a photoresist composition containing Photo Base Generator (PBG), more specifically, to a photoresist composition which comprises (a) photoresist resin, (b) photo acid generator, (c) organic solvent and further (d) photo base generator. The photo base generator is preferably selected from benzyloxycarbonyl compound of Chemical Formula 1 or O-acyloxime compound of Chemical Formula 2, which prevents a slopping pattern formation and a severe I/D Bias occurrence. wherein, R′, R1 to R6 are defined in accordance with the Specification.

    摘要翻译： 本发明涉及一种含光致抗蚀剂组合物，更具体地说涉及光致抗蚀剂组合物，该组合物包括（a）光致抗蚀剂树脂，（b）光酸产生剂，（c）有机溶剂和（d） 发电机。 光产生剂优选选自化学式1的苄氧基羰基化合物或化学式2的O-酰氧基肟化合物，其防止形成浆液形成和严重的I / D偏差。其中R'，R 1至R 6定义在 符合规范。

    Photoresist cross-linker and photoresist composition comprising the same
    9.
    发明授权
    Photoresist cross-linker and photoresist composition comprising the same 失效
    光阻抗交联剂和包含其的光致抗蚀剂组合物

    公开(公告)号：US06368773B1

    公开(公告)日：2002-04-09

    申请号：US09448916

    申请日：1999-11-24

    申请人： Jae Chang Jung ,  Keun Kyu Kong ,  Myoung Soo Kim ,  Hyoung Gi Kim ,  Hyeong Soo Kim ,  Ki Ho Baik ,  Jin Soo Kim

    发明人： Jae Chang Jung ,  Keun Kyu Kong ,  Myoung Soo Kim ,  Hyoung Gi Kim ,  Hyeong Soo Kim ,  Ki Ho Baik ,  Jin Soo Kim

    IPC分类号： G03F7027

    CPC分类号： C08F216/38 ,  C07C43/303 ,  C08F220/06 ,  G03F7/0382

    摘要： The present invention relates to a cross-linker for photoresist compositions which is suitable for a photolithography process using KrF (248 mn), ArF (193 mn), E-beam, ion beam or EUV light sources. Preferred cross-linkers, according to the present invention, comprise a copolymer of (i) a compound represented by following Chemical Formula 1 and/or (ii) one or more compound(s) selected from the group consisting of acrylic acid, methacrylic acid and maleic anhydride. wherein, R1 and R2 individually represent straight or branched C1-10 alkyl, straight or branched C1-10 ester, straight or branched C1-10 ketone, straight or branched C1-10 carboxylic acid, straight or branched C1-10 acetal, straight or branched C1-10 alkyl including at least one hydroxyl group, straight or branched C1-10 ester including at least one hydroxyl group, straight or branched C1-10 ketone including at least one hydroxyl group, straight or branched C1-10 carboxylic acid including at least one hydroxyl group, and straight or branched C1-10 acetal including at least one hydroxyl group; and R3 represents hydrogen or methyl.

    摘要翻译： 本发明涉及适用于使用KrF（248nm），ArF（193nm），电子束，离子束或EUV光源的光刻工艺的光致抗蚀剂组合物的交联剂。 根据本发明，优选的交联剂包含（i）由以下化学式1表示的化合物和/或（ii）一种或多种选自丙烯酸，甲基丙烯酸 其中R1和R2分别表示直链或支链C1-10烷基，直链或支链C1-10酯，直链或支链C1-10酮，直链或支链C1-10羧酸，直链或支链C1-10 包括至少一个羟基的直链或支链C 1-10烷基，包括至少一个羟基的直链或支链C 1-10酯，包括至少一个羟基的直链或支链C 1-10酮直链或支链C 1-10 包含至少一个羟基的羧酸，和包含至少一个羟基的直链或支链C 1-10缩醛; 并且R 3表示氢或甲基。

    Monomers for photoresist, polymers thereof, and photoresist compositions using the same
    10.
    发明授权
    Monomers for photoresist, polymers thereof, and photoresist compositions using the same 失效

    公开(公告)号：US06291131B1

    公开(公告)日：2001-09-18

    申请号：US09383547

    申请日：1999-08-26

    申请人： Jae Chang Jung ,  Chi Hyeong Roh ,  Min Ho Jung ,  Keun Kyu Kong ,  Geun Su Lee ,  Ki Ho Baik

    发明人： Jae Chang Jung ,  Chi Hyeong Roh ,  Min Ho Jung ,  Keun Kyu Kong ,  Geun Su Lee ,  Ki Ho Baik

    IPC分类号： G03F7004

    CPC分类号： C07D493/08 ,  C07C61/13 ,  C07C69/753 ,  C07D495/08 ,  C08F222/06 ,  C08F232/08 ,  G03F7/0045 ,  G03F7/039 ,  Y02P20/55 ,  Y10S430/127

    摘要： The present invention relates to novel monomers for preparing photoresist polymers, polymers thereof, and photoresist compositions using the same. The monomers of the iinvention are represented by the following Chemical Formula 1: wherein, X and Y individually represent oxygen, sulfur, CH2 or CH2CH2; n is an integer of 1 to 5; and R1, R2, R3 and R4 individually represent hydrogen, C1-C10 alkyl having substituent(s) on its main or branched chain, C1-C10 ester having substituent(s) on its main or branched chain, C1-C10 ketone having substituent(s) on its main or branched chain, C1-C10 carboxylic acid having substituent(s) on its main or branched chain, C1-C10 acetal having substituent(s) on its main or branched chain, C1-C10 alkyl having substituent(s) including one or more hydroxyl group(s) on its main or branched chain, C1-C10 ester having substituent(s) including one or more hydroxyl group(s ) on its main or branched chain, C1-C10 ketone having substituent(s) including one or more hydroxyl group(s) on its main or branched chain, C1-C10 carboxylic acid having substituent(s) including one or more hydroxyl group(s) on its main or branched chain, or C1-C10 acetal having substituent(s) including one or more hydroxyl group(s) on its main or branched chain; provided that at least one of R1 to R4 represent(s) —COO—R′—OH wherein R′ is a linear or branched chain alkyl group with or without substituent(s) on its linear or branched chain. Polymers according to the present invention preferably comprise (i) a monomer of Chemical Formula 1 above as the first comonomer, (ii) a polyalicyclic derivative having one or more acid labile protective group(s) as the second comonomer, and (iii) at least one polymerization-enhancing monomer, preferably selected from the group consisting of maleic anhydride, maleimide derivatives, and combinations thereof. In order to increase photosensitivity, it is also preferable for the photoresist copolymer to comprise (iv) a polyalicyclic derivative having one or more carboxylic acid groups, as an additional comonomer.