公开(公告)号：US20120280345A1

公开(公告)日：2012-11-08

申请号：US13464763

申请日：2012-05-04

Applicant: Shiyang Zhu ,  Guo-Qiang Patrick Lo

Inventor： Shiyang Zhu ,  Guo-Qiang Patrick Lo

IPC: H01L31/0232 ,  H01L31/18

CPC classification number: G02B6/12004 ,  B82Y20/00 ,  G02B6/1226 ,  G02B2006/12061 ,  G02B2006/12123 ,  H01L31/022408 ,  H01L31/108

Abstract: According to embodiments of the present invention, a photodetector is provided. The photodetector includes a substrate, a waveguide formed on a surface of the substrate, a first metal layer formed on a first side of the waveguide, wherein a first interface is defined between the waveguide and the first metal layer, and a silicide layer formed on a second side of the waveguide, wherein a second interface is defined between the waveguide and the silicide layer, and wherein the second side is opposite to the first side, and wherein at least one of the first interface and the second interface is at least substantially perpendicular to the surface of the substrate. Various embodiments further provide a method of forming the photodetector.

Abstract translation: 根据本发明的实施例，提供了一种光电检测器。 所述光检测器包括基板，形成在所述基板的表面上的波导，形成在所述波导的第一侧上的第一金属层，其中在所述波导与所述第一金属层之间限定第一界面， 波导的第二侧，其中在所述波导和所述硅化物层之间限定第二界面，并且其中所述第二侧与所述第一侧相对，并且其中所述第一界面和所述第二界面中的至少一个至少基本上 垂直于衬底的表面。 各种实施例还提供了形成光电检测器的方法。

公开(公告)号：US20090163005A1

公开(公告)日：2009-06-25

申请号：US12322932

申请日：2009-02-09

Applicant: Shiyang Zhu ,  Jingde Chen ,  Sungjoo Lee ,  Ming Fu Li ,  Jagar Singh ,  Chunxiang Zhu ,  Dim-Lee Kwong

Inventor： Shiyang Zhu ,  Jingde Chen ,  Sungjoo Lee ,  Ming Fu Li ,  Jagar Singh ,  Chunxiang Zhu ,  Dim-Lee Kwong

IPC: H01L21/28

CPC classification number: H01L21/28518 ,  H01L21/28088 ,  H01L21/28185 ,  H01L29/47 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66643 ,  H01L29/7839

Abstract: A method of fabricating an N-type Schottky barrier Source/Drain Transistor (N-SSDT) with ytterbium silicide (YbSi2-x) for source and drain is presented. The fabrication of YbSi2-x is compatible with the normal CMOS process but ultra-high vacuum, which is required for ErSi2-x fabrication, is not needed here. To prevent oxidation of ytterbium during ex situ annealing and to improve the film quality, a suitable capping layer stack has been developed.

Abstract translation: 提出了一种制造用于源极和漏极的镱硅化物（YbSi2-x）的N型肖特基势垒源极/漏极晶体管（N-SSDT）的方法。 YbSi2-x的制造与正常的CMOS工艺兼容，但是不需要ErSi2-x制造所需的超高真空。 为了防止在原位退火过程中镱的氧化并提高膜质量，已经开发了合适​​的覆盖层叠层。

公开(公告)号：US08532440B2

公开(公告)日：2013-09-10

申请号：US13036244

申请日：2011-02-28

Applicant: Jun Ushida ,  Junichi Fujikata ,  Ming-Bin Yu ,  Liang Ding ,  ShiYang Zhu

Inventor： Jun Ushida ,  Junichi Fujikata ,  Ming-Bin Yu ,  Liang Ding ,  ShiYang Zhu

IPC: G02F1/025 ,  G02F1/035

CPC classification number: G02F1/025 ,  G02F2201/066 ,  G02F2201/12 ,  G02F2202/06 ,  G02F2202/105

Abstract: In an electro-optic device, a stack structure including a first silicon layer of a first conductivity type and a second silicon layer of a second conductivity type has a rib waveguide shape so as to form an optical confinement area, and a slab portion of a rib waveguide includes an area to which a metal electrode is connected. The slab portion in the area to which the metal electrode is connected is thicker than a surrounding slab portion. The area to which the metal electrode is connected is set so that a range of a distance from the rib waveguide to the area to which the metal electrode is connected is such that when the distance is changed, an effective refractive index of the rib waveguide in a zeroth-order mode does not change.

Abstract translation: 在电光装置中，包括第一导电类型的第一硅层和第二导电类型的第二硅层的堆叠结构具有肋波导形状以形成光限制区域，并且将板状部分 肋波导包括连接金属电极的区域。 金属电极连接的区域中的板坯部分比周围的板坯部分厚。 金属电极连接的区域被设定为使得从肋波导到连接金属电极的区域的距离的范围使得当距离变化时，肋波导的有效折射率在 零阶模式不会改变。

公开(公告)号：US20090179281A1

公开(公告)日：2009-07-16

申请号：US12322604

申请日：2009-02-04

Applicant: Shiyang Zhu ,  Jingde Chen ,  Sungjoo Lee ,  Ming Fu Li ,  Jagar Singh ,  Chungxiang Zhu ,  Dim-Lee Kwong

Inventor： Shiyang Zhu ,  Jingde Chen ,  Sungjoo Lee ,  Ming Fu Li ,  Jagar Singh ,  Chungxiang Zhu ,  Dim-Lee Kwong

IPC: H01L29/78

CPC classification number: H01L21/28518 ,  H01L21/28088 ,  H01L21/28185 ,  H01L29/47 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66643 ,  H01L29/7839

Abstract: An N-type Schottky barrier Source/Drain Transistor (N-SSDT) that uses ytterbium silicide (YbSi2-x) for the source and drain is described. The structure includes a suitable capping layer stack.

Abstract translation: 描述了使用镱硅化物（YbSi2-x）作为源极和漏极的N型肖特基势垒源极/漏极晶体管（N-SSDT）。 该结构包括合适的覆盖层堆叠。

公开(公告)号：US07504328B2

公开(公告)日：2009-03-17

申请号：US11126031

申请日：2005-05-10

Applicant: Shiyang Zhu ,  Jingde Chen ,  Sungjoo Lee ,  Ming Fu Li ,  Jagar Singh ,  Chunxiang Zhu ,  Dim-Lee Kwong

Inventor： Shiyang Zhu ,  Jingde Chen ,  Sungjoo Lee ,  Ming Fu Li ,  Jagar Singh ,  Chunxiang Zhu ,  Dim-Lee Kwong

IPC: H01L21/441

CPC classification number: H01L21/28518 ,  H01L21/28088 ,  H01L21/28185 ,  H01L29/47 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66643 ,  H01L29/7839

Abstract: A method of fabricating an N-type Schottky barrier Source/Drain Transistor (N-SSDT) with ytterbium silicide (YbSi2-x) for source and drain is presented. The fabrication of YbSi2-x is compatible with the normal CMOS process but ultra-high vacuum, which is required for ErSi2-x fabrication, is not needed here. To prevent oxidation of ytterbium during ex situ annealing and to improve the film quality, a suitable capping layer stack has been developed.

Abstract translation: 提出了一种制造用于源极和漏极的镱硅化物（YbSi2-x）的N型肖特基势垒源极/漏极晶体管（N-SSDT）的方法。 YbSi2-x的制造与正常的CMOS工艺兼容，但是不需要ErSi2-x制造所需的超高真空。 为了防止在原位退火过程中镱的氧化并提高膜质量，已经开发了合适​​的覆盖层叠层。

公开(公告)号：US20110211786A1

公开(公告)日：2011-09-01

申请号：US13036244

申请日：2011-02-28

Applicant: Jun USHIDA ,  Junichi FUJIKATA ,  Ming-Bin YU ,  Liang DING ,  ShiYang ZHU

Inventor： Jun USHIDA ,  Junichi FUJIKATA ,  Ming-Bin YU ,  Liang DING ,  ShiYang ZHU

IPC: G02F1/025

CPC classification number: G02F1/025 ,  G02F2201/066 ,  G02F2201/12 ,  G02F2202/06 ,  G02F2202/105

Abstract: In an electro-optic device, a stack structure including a first silicon layer of a first conductivity type and a second silicon layer of a second conductivity type has a rib waveguide shape so as to form an optical confinement area, and a slab portion of a rib waveguide includes an area to which a metal electrode is connected. The slab portion in the area to which the metal electrode is connected is thicker than a surrounding slab portion. The area to which the metal electrode is connected is set so that a range of a distance from the rib waveguide to the area to which the metal electrode is connected is such that when the distance is changed, an effective refractive index of the rib waveguide in a zeroth-order mode does not change.

Abstract translation: 在电光装置中，包括第一导电类型的第一硅层和第二导电类型的第二硅层的堆叠结构具有肋波导形状以形成光限制区域，并且将板状部分 肋波导包括连接金属电极的区域。 金属电极连接的区域中的板坯部分比周围的板坯部分厚。 金属电极连接的区域被设定为使得从肋波导到连接金属电极的区域的距离的范围使得当距离变化时，肋波导的有效折射率在 零阶模式不会改变。

公开(公告)号：US20050275033A1

公开(公告)日：2005-12-15

申请号：US11126031

申请日：2005-05-10

Applicant: Shiyang Zhu ,  Jingde Chen ,  Sung Lee ,  Ming Li ,  Jagar Singh ,  Chunxiang Zhu ,  Dim-Lee Kwong

Inventor： Shiyang Zhu ,  Jingde Chen ,  Sung Lee ,  Ming Li ,  Jagar Singh ,  Chunxiang Zhu ,  Dim-Lee Kwong

IPC: H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  H01L29/47 ,  H01L29/49 ,  H01L29/51 ,  H01L29/76 ,  H01L29/78

CPC classification number: H01L21/28518 ,  H01L21/28088 ,  H01L21/28185 ,  H01L29/47 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66643 ,  H01L29/7839

Abstract: A method of fabricating an N-type Schottky barrier Source/Drain Transistor (N-SSDT) with ytterbium silicide (YbSi2-x) for source and drain is presented. The fabrication of YbSi2-x is compatible with the normal CMOS process but ultra-high vacuum, which is required for ErSi2-x fabrication, is not needed here. To prevent oxidation of ytterbium during ex situ annealing and to improve the film quality, a suitable capping layer stack has been developed.

Abstract translation: 提出了一种用于源极和漏极制造具有镱硅化物（YbSi 2-x-x）的N型肖特基势垒源极/漏极晶体管（N-SSDT）的方法。 YbSi 2-x 的制造与正常的CMOS工艺兼容，但是在这里不需要对于ErSi 2-x N制造所需的超高真空。 为了防止在原位退火过程中镱的氧化并提高膜质量，已经开发了合适​​的覆盖层叠层。