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公开(公告)号：US08697336B2
公开(公告)日：2014-04-15
申请号：US13327030
申请日：2011-12-15
申请人： Shigemasa Nakasugi , Kazuma Yamamoto , Yasushi Akiyama , Shinji Miyazaki , Munirathna Padmanaban , Srinivasan Chakrapani
发明人： Shigemasa Nakasugi , Kazuma Yamamoto , Yasushi Akiyama , Shinji Miyazaki , Munirathna Padmanaban , Srinivasan Chakrapani
IPC分类号： G03F7/027 , G03F7/11 , G03F7/30 , G03F7/40 , H01L21/027
CPC分类号： G03F7/20 , C08K5/1535 , C08K5/3415 , C09D135/00 , G03C1/73 , G03F7/0392 , G03F7/091 , G03F7/095
摘要： The present invention provides a composition for forming a bottom anti-reflective coating, and also provides a photoresist pattern formation method employing that composition. The composition gives a bottom anti-reflective coating used in a lithographic process for manufacturing semiconductor devices, and the coating can be developed with a developing solution for photoresist. The composition contains a solvent, a polymer having a condensed polycyclic aromatic group, and a compound having a maleimide derivative or a maleic anhydride derivative. The composition may further contain a photo acid generator or a crosslinking agent.
摘要翻译： 本发明提供了一种用于形成底部抗反射涂层的组合物，并且还提供了使用该组合物的光致抗蚀剂图案形成方法。 该组合物提供用于制造半导体器件的光刻工艺中使用的底部抗反射涂层，并且可以用用于光致抗蚀剂的显影溶液来显影涂层。 该组合物含有溶剂，具有缩合多环芳基的聚合物和具有马来酰亚胺衍生物或马来酸酐衍生物的化合物。 组合物还可以含有光酸产生剂或交联剂。
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公开(公告)号：US08900797B2
公开(公告)日：2014-12-02
申请号：US13627599
申请日：2012-09-26
IPC分类号： C07D251/38 , C07D213/69 , C07D213/70 , C07D239/60 , C07D251/30 , G03F7/004 , G03F7/20
CPC分类号： G03F7/038 , C07D251/30 , C07D251/38 , G03F7/091
摘要： The present invention provides a cross-linking agent capable of preventing formation of scum from a bottom anti-reflective coating, and also provides a composition for forming a bottom anti-reflection coating containing the agent. The cross-linking agent is a nitrogen-containing aromatic compound having at least one vinyloxy group or N-methoxymethylamide group, and the composition contains the cross-linking agent. The cross-linking agent of the formula (1) can be produced by reaction of a nitrogen-containing aromatic compound, a halogen compound having a vinyloxy group or N-methoxymethylamide group and a basic compound.
摘要翻译： 本发明提供能够防止从底部抗反射涂层形成浮渣的交联剂，并且还提供了用于形成含有该试剂的底部防反射涂层的组合物。 交联剂是具有至少一个乙烯基氧基或N-甲氧基甲基酰胺基的含氮芳香族化合物，该组合物含有交联剂。 式（1）的交联剂可以通过含氮芳族化合物，具有乙烯氧基的卤素化合物或N-甲氧基甲基酰胺基和碱性化合物的反应来制备。
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公开(公告)号：US20140087311A1
公开(公告)日：2014-03-27
申请号：US13627599
申请日：2012-09-26
IPC分类号： C07D251/38 , G03F7/20 , C07D213/70 , C07D239/60 , C07D213/69 , G03F7/004 , C07D251/30
CPC分类号： G03F7/038 , C07D251/30 , C07D251/38 , G03F7/091
摘要： The present invention provides a cross-linking agent capable of preventing formation of scum from a bottom anti-reflective coating, and also provides a composition for forming a bottom anti-reflection coating containing the agent. The cross-linking agent is a nitrogen-containing aromatic compound having at least one vinyloxy group or N-methoxymethylamide group, and the composition contains the cross-linking agent. The cross-linking agent of the formula (1) can be produced by reaction of a nitrogen-containing aromatic compound, a halogen compound having a vinyloxy group or N-methoxymethylamide group and a basic compound.
摘要翻译： 本发明提供能够防止从底部抗反射涂层形成浮渣的交联剂，并且还提供了用于形成含有该试剂的底部防反射涂层的组合物。 交联剂是具有至少一个乙烯基氧基或N-甲氧基甲基酰胺基的含氮芳香族化合物，该组合物含有交联剂。 式（1）的交联剂可以通过含氮芳族化合物，具有乙烯氧基的卤素化合物或N-甲氧基甲基酰胺基和碱性化合物的反应来制备。
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公开(公告)号：US20130157196A1
公开(公告)日：2013-06-20
申请号：US13327030
申请日：2011-12-15
申请人： Shigemasa Nakasugi , Kazuma Yamamoto , Yasushi Akiyama , Shinji Miyazaki , Munirathna Padmanaban , Srinivasan Chakrapani
发明人： Shigemasa Nakasugi , Kazuma Yamamoto , Yasushi Akiyama , Shinji Miyazaki , Munirathna Padmanaban , Srinivasan Chakrapani
IPC分类号： G03F7/20 , C08K5/07 , C08K5/1535 , G03F7/027
CPC分类号： G03F7/20 , C08K5/1535 , C08K5/3415 , C09D135/00 , G03C1/73 , G03F7/0392 , G03F7/091 , G03F7/095
摘要： The present invention provides a composition for forming a bottom anti-reflective coating, and also provides a photoresist pattern formation method employing that composition. The composition gives a bottom anti-reflective coating used in a lithographic process for manufacturing semiconductor devices, and the coating can be developed with a developing solution for photoresist. The composition contains a solvent, a polymer having a condensed polycyclic aromatic group, and a compound having a maleimide derivative or a maleic anhydride derivative. The composition may further contain a photo acid generator or a crosslinking agent.
摘要翻译： 本发明提供了一种用于形成底部抗反射涂层的组合物，并且还提供了使用该组合物的光致抗蚀剂图案形成方法。 该组合物提供用于制造半导体器件的光刻工艺中使用的底部抗反射涂层，并且可以用用于光致抗蚀剂的显影溶液来显影涂层。 该组合物含有溶剂，具有缩合多环芳基的聚合物和具有马来酰亚胺衍生物或马来酸酐衍生物的化合物。 组合物还可以含有光酸产生剂或交联剂。
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5.发明授权Composition for forming fine resist pattern and pattern formation method using same 有权用于形成精细抗蚀剂图案的组合物和使用其的图案形成方法公开(公告)号：US09360756B2
公开(公告)日：2016-06-07
申请号：US14431512
申请日：2013-10-01
申请人： Kazuma Yamamoto , Masahiro Ishii , Takashi Sekito , Hiroshi Yanagita , Shigemasa Nakasugi , Go Noya
发明人： Kazuma Yamamoto , Masahiro Ishii , Takashi Sekito , Hiroshi Yanagita , Shigemasa Nakasugi , Go Noya
IPC分类号： G03F7/11 , G03F7/16 , G03F7/32 , G03F7/26 , C08F220/26 , C08F220/30 , H01L21/027 , H01L21/033 , C08F12/24 , C08F20/30 , G03F7/039 , G03F7/40 , C09D129/02 , C09D133/14 , C09D137/00 , G03F7/038
CPC分类号： G03F7/168 , C08F12/24 , C08F20/30 , C08F220/26 , C08F220/30 , C09D129/02 , C09D133/14 , C09D137/00 , G03F7/0382 , G03F7/0397 , G03F7/11 , G03F7/26 , G03F7/32 , G03F7/325 , G03F7/40 , G03F7/405 , H01L21/0274 , H01L21/0338
摘要： The present invention provides a fine pattern-forming composition enabling to form a resist pattern having high dry etching resistance, and also provides a pattern formation method using that composition. This formation method hardly causes pipe blockages in the production process. The composition is used for miniaturizing a resist pattern by fattening in a process of forming a negative resist pattern from a chemically amplified resist composition, and comprises a polymer containing a repeating unit having a hydroxyaryl group and an organic solvent not dissolving the negative resist pattern. In the formation method, the fine pattern-forming composition and the resist composition are individually cast with the same coating apparatus, so as to prevent pipe blockages.
摘要翻译： 本发明提供能够形成具有高耐干蚀刻性的抗蚀剂图案的精细图案形成组合物，并且还提供使用该组合物的图案形成方法。 这种形成方法在生产过程中几乎不会导致管堵塞。 该组合物用于在从化学放大抗蚀剂组合物形成负性抗蚀剂图案的工艺中通过育肥来使抗蚀剂图案小型化，并且包含含有具有羟基芳基的重复单元的聚合物和不溶解负型抗蚀剂图案的有机溶剂。 在形成方法中，用相同的涂布装置分别铸造精细图案形成组合物和抗蚀剂组合物，以防止管堵塞。
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6.发明申请公开(公告)号：US20140193753A1
公开(公告)日：2014-07-10
申请号：US14183630
申请日：2014-02-19
申请人： Shigemasa NAKASUGI , Kazuma YAMAMOTO , Shinji MIYAZAKI , Munirathna PADMANABAN , Srinivasan CHAKRAPANI
发明人： Shigemasa NAKASUGI , Kazuma YAMAMOTO , Shinji MIYAZAKI , Munirathna PADMANABAN , Srinivasan CHAKRAPANI
CPC分类号： G03F7/20 , C08K5/1535 , C08K5/3415 , C09D135/00 , G03C1/73 , G03F7/0392 , G03F7/091 , G03F7/095
摘要： The present invention provides a composition for forming a bottom anti-reflective coating, and also provides a photoresist pattern formation method employing that composition. The composition gives a bottom anti-reflective coating used in a lithographic process for manufacturing semiconductor devices, and the coating can be developed with a developing solution for photoresist. The composition contains a solvent, a polymer having a condensed polycyclic aromatic group, and a compound having a maleimide derivative or a maleic anhydride derivative. The composition may further contain a photo acid generator or a crosslinking agent.
摘要翻译： 本发明提供了一种用于形成底部抗反射涂层的组合物，并且还提供了使用该组合物的光致抗蚀剂图案形成方法。 该组合物提供用于制造半导体器件的光刻工艺中使用的底部抗反射涂层，并且可以用用于光致抗蚀剂的显影溶液来显影涂层。 该组合物含有溶剂，具有缩合多环芳基的聚合物和具有马来酰亚胺衍生物或马来酸酐衍生物的化合物。 组合物还可以含有光酸产生剂或交联剂。
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