公开(公告)号：US20090230541A1

公开(公告)日：2009-09-17

申请号：US12395008

申请日：2009-02-27

申请人： Makoto Araki ,  Shimpei Ishida ,  Shigeru Nakamura

发明人： Makoto Araki ,  Shimpei Ishida ,  Shigeru Nakamura

IPC分类号： H01L23/48 ,  H01L21/78 ,  H01L21/50

CPC分类号： H01L24/91 ,  H01L24/24 ,  H01L24/73 ,  H01L24/82 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/04105 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/18 ,  H01L2224/27013 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73257 ,  H01L2224/73259 ,  H01L2224/73265 ,  H01L2224/83051 ,  H01L2224/92 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15311 ,  H01L2924/1815 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H05K1/0206 ,  H05K1/186 ,  H05K3/429 ,  H05K3/4602 ,  H05K2201/09509 ,  H05K2201/10674 ,  H05K2201/10969 ,  H05K2203/049 ,  H01L2224/81 ,  H01L2224/82 ,  H01L2224/85 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device in which a chip is embedded in a wiring board and bump electrodes formed over the front surface of the semiconductor chip are flip-chip coupled to wiring formed in the wiring board and the entire back surface of the semiconductor chip functions well as a back electrode and a method of manufacturing the semiconductor device. A semiconductor chip is embedded inside a wiring board. The semiconductor chip is flip-chip coupled (face down) to a base substrate as the core layer of the wiring board through bump electrodes. A conductive film is formed over the semiconductor chip's surface reverse to the surface over which bump electrodes are formed. The conductive film functions as a back electrode which supplies a reference voltage to the integrated circuit in the semiconductor chip. The conductive film is electrically coupled to third-layer wiring through vias.

摘要翻译： 其中将芯片嵌入布线板中的半导体器件和形成在半导体芯片的前表面上的凸块电极被倒装芯片耦合到布线板中形成的布线，并且半导体芯片的整个背面的功能很好地作为 背电极和半导体器件的制造方法。 将半导体芯片嵌入在布线板内。 半导体芯片通过凸块电极与布线板的芯层作为基底衬底（面向下）耦合（面向下）。 导电膜形成在与形成凸起电极的表面相反的半导体芯片的表面上。 导电膜用作向半导体芯片中的集成电路提供参考电压的背面电极。 导电膜通过通孔电耦合到第三层布线。